JPH0449792B2 - - Google Patents

Info

Publication number
JPH0449792B2
JPH0449792B2 JP58175373A JP17537383A JPH0449792B2 JP H0449792 B2 JPH0449792 B2 JP H0449792B2 JP 58175373 A JP58175373 A JP 58175373A JP 17537383 A JP17537383 A JP 17537383A JP H0449792 B2 JPH0449792 B2 JP H0449792B2
Authority
JP
Japan
Prior art keywords
layer
type
cladding layer
active layer
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58175373A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6066893A (ja
Inventor
Naoto Mogi
Yukio Watanabe
Naohiro Shimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP17537383A priority Critical patent/JPS6066893A/ja
Publication of JPS6066893A publication Critical patent/JPS6066893A/ja
Publication of JPH0449792B2 publication Critical patent/JPH0449792B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode

Landscapes

  • Semiconductor Lasers (AREA)
JP17537383A 1983-09-22 1983-09-22 半導体レ−ザ装置及びその製造方法 Granted JPS6066893A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17537383A JPS6066893A (ja) 1983-09-22 1983-09-22 半導体レ−ザ装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17537383A JPS6066893A (ja) 1983-09-22 1983-09-22 半導体レ−ザ装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPS6066893A JPS6066893A (ja) 1985-04-17
JPH0449792B2 true JPH0449792B2 (enrdf_load_stackoverflow) 1992-08-12

Family

ID=15994961

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17537383A Granted JPS6066893A (ja) 1983-09-22 1983-09-22 半導体レ−ザ装置及びその製造方法

Country Status (1)

Country Link
JP (1) JPS6066893A (enrdf_load_stackoverflow)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5690586A (en) * 1979-12-21 1981-07-22 Seiji Yasu Semiconductor laser and manufacture thereof

Also Published As

Publication number Publication date
JPS6066893A (ja) 1985-04-17

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