JPH0449787B2 - - Google Patents
Info
- Publication number
- JPH0449787B2 JPH0449787B2 JP58198711A JP19871183A JPH0449787B2 JP H0449787 B2 JPH0449787 B2 JP H0449787B2 JP 58198711 A JP58198711 A JP 58198711A JP 19871183 A JP19871183 A JP 19871183A JP H0449787 B2 JPH0449787 B2 JP H0449787B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- sno
- light
- vertical register
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 5
- 238000002834 transmittance Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 42
- 229910006404 SnO 2 Inorganic materials 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 239000012535 impurity Substances 0.000 description 6
- 230000010354 integration Effects 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 206010047571 Visual impairment Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58198711A JPS6089967A (ja) | 1983-10-24 | 1983-10-24 | 光電変換素子 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58198711A JPS6089967A (ja) | 1983-10-24 | 1983-10-24 | 光電変換素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6089967A JPS6089967A (ja) | 1985-05-20 |
JPH0449787B2 true JPH0449787B2 (fr) | 1992-08-12 |
Family
ID=16395736
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58198711A Granted JPS6089967A (ja) | 1983-10-24 | 1983-10-24 | 光電変換素子 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6089967A (fr) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62239575A (ja) * | 1986-04-11 | 1987-10-20 | Fujitsu Ltd | 固体撮像装置 |
JPS6420654A (en) * | 1987-07-15 | 1989-01-24 | Toshiba Corp | Solid-state image sensing device and manufacture thereof |
JPH01143345A (ja) * | 1987-11-30 | 1989-06-05 | Hamamatsu Photonics Kk | 半導体集積回路装置 |
JPH0360159A (ja) * | 1989-07-28 | 1991-03-15 | Nec Corp | 固体撮像素子 |
KR100259063B1 (ko) * | 1992-06-12 | 2000-06-15 | 김영환 | Ccd 영상소자 |
JPH0824178B2 (ja) * | 1993-02-15 | 1996-03-06 | 日本電気株式会社 | 固体撮像装置 |
KR970007711B1 (ko) * | 1993-05-18 | 1997-05-15 | 삼성전자 주식회사 | 오버-플로우 드레인(ofd)구조를 가지는 전하결합소자형 고체촬상장치 |
-
1983
- 1983-10-24 JP JP58198711A patent/JPS6089967A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6089967A (ja) | 1985-05-20 |
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