JPH0448656U - - Google Patents

Info

Publication number
JPH0448656U
JPH0448656U JP1990091438U JP9143890U JPH0448656U JP H0448656 U JPH0448656 U JP H0448656U JP 1990091438 U JP1990091438 U JP 1990091438U JP 9143890 U JP9143890 U JP 9143890U JP H0448656 U JPH0448656 U JP H0448656U
Authority
JP
Japan
Prior art keywords
semiconductor laser
laser device
electrode surface
heat sinks
liquid metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1990091438U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1990091438U priority Critical patent/JPH0448656U/ja
Publication of JPH0448656U publication Critical patent/JPH0448656U/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H01L2224/331—Disposition
    • H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/33181—On opposite sides of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/4901—Structure
    • H01L2224/4903—Connectors having different sizes, e.g. different diameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Description

【図面の簡単な説明】
第１図は本考案の半導体レーザ装置の第１の実
施例を示す部分拡大斜視図、第２図、第３図はそ
れぞれ本考案の第２、第３の実施例を示す部分拡
大正面図、第４図は半導体レーザ装置の電流−光
出力特性を示すグラフ、第５図は従来例を示す部
分拡大正面図である。 １，６，８……ヒートシンク（放熱器）、２…
…金属ハンダ、３……半導体レーザ素子、３ａ…
…第１の電極面、３ｂ……第２の電極面、４……
Ａｕワイヤ、５……液体金属、７……端子。

Claims (1)

  1. 【実用新案登録請求の範囲】 (1) 半導体レーザ素子の第１の電極面と第２の
    電極面のそれぞれに放熱器を設けたことを特徴と
    する半導体レーザ装置。 (2) 請求の範囲第１項記載の半導体レーザ装置
    において、前記放熱器のうち少なくとも１つは金
    ワイヤを使用して形成されたことを特徴とする半
    導体レーザ装置。 (3) 請求の範囲第１項記載の半導体レーザ装置
    において、前記放熱器のうち少なくとも１つは一
    部に液体金属を用いて構成されたことを特徴とす
    る半導体レーザ装置。
JP1990091438U 1990-08-31 1990-08-31 Pending JPH0448656U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1990091438U JPH0448656U (ja) 1990-08-31 1990-08-31

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1990091438U JPH0448656U (ja) 1990-08-31 1990-08-31

Publications (1)

Publication Number Publication Date
JPH0448656U true JPH0448656U (ja) 1992-04-24

Family

ID=31827068

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1990091438U Pending JPH0448656U (ja) 1990-08-31 1990-08-31

Country Status (1)

Country Link
JP (1) JPH0448656U (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010045274A (ja) * 2008-08-18 2010-02-25 Seiko Epson Corp レーザ光源装置、プロジェクタ、モニタ装置
JP2010067731A (ja) * 2008-09-10 2010-03-25 Nec Corp 光モジュール及び光伝送方法
JP2012527754A (ja) * 2009-05-22 2012-11-08 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング パルス制御される高出力レーザダイオード用のヒートシンク
JP2014060452A (ja) * 2013-12-18 2014-04-03 Seiko Epson Corp 固体光源装置、プロジェクタ、モニタ装置
JP2015099388A (ja) * 2015-02-02 2015-05-28 セイコーエプソン株式会社 固体光源装置、プロジェクタ、モニタ装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010045274A (ja) * 2008-08-18 2010-02-25 Seiko Epson Corp レーザ光源装置、プロジェクタ、モニタ装置
JP2010067731A (ja) * 2008-09-10 2010-03-25 Nec Corp 光モジュール及び光伝送方法
JP2012527754A (ja) * 2009-05-22 2012-11-08 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング パルス制御される高出力レーザダイオード用のヒートシンク
JP2014060452A (ja) * 2013-12-18 2014-04-03 Seiko Epson Corp 固体光源装置、プロジェクタ、モニタ装置
JP2015099388A (ja) * 2015-02-02 2015-05-28 セイコーエプソン株式会社 固体光源装置、プロジェクタ、モニタ装置

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