JPH0480065U - - Google Patents

Info

Publication number
JPH0480065U
JPH0480065U JP1990124512U JP12451290U JPH0480065U JP H0480065 U JPH0480065 U JP H0480065U JP 1990124512 U JP1990124512 U JP 1990124512U JP 12451290 U JP12451290 U JP 12451290U JP H0480065 U JPH0480065 U JP H0480065U
Authority
JP
Japan
Prior art keywords
connection conductor
internal connection
metal base
semiconductor elements
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1990124512U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1990124512U priority Critical patent/JPH0480065U/ja
Publication of JPH0480065U publication Critical patent/JPH0480065U/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/37099—Material
    • H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/37147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/40139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous strap daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)

Description

【図面の簡単な説明】
第１図は本考案にかかる電力用半導体装置の一
実施例を説明するための図であり、そのＡは正面
から、そのＢは側からみた概略図である。第２図
は本考案に用いられる内部接続導体の一実施例を
示し、第３図Ａ，Ｂはそれぞれ本考案に用いられ
る別の内部接続導体の実施例を示す。第４図Ａ，
Ｂは従来例を説明するための図である。 １……金属ベース、２……枠体、３Ａ，３Ｂ，
３Ｃ……外部引出導体、４Ａ，４Ａ′，４Ｂ，４
Ｂ′，４Ｃ，４Ｃ′……半導体素子、６Ａ，６Ｂ
，６Ｃ……内部接続導体、６ａ，６ｂ……接続部
、６ｃ，６ｄ……脚部、６ｅ……橋絡部、６ｆ…
…切込み、６ｇ……ろう付け部。

Claims (1)

  1. 【実用新案登録請求の範囲】 (1) 金属ベース、金属小片を介して前記金属ベ
    ースに載置される複数の半導体素子、およびこれ
    ら半導体素子の２個以上を互いに電気的接続する
    と共に外部接続導体に接続する内部接続導体を備
    えた半導体装置において、前記内部接続導体は前
    記半導体素子が接続される箇所と箇所の間に切り
    込みを備えたことを特徴とする電力用半導体装置
    。 (2) 金属ベース、金属小片を介して前記金属ベ
    ースに載置される複数の半導体素子、およびこれ
    半導体素子の２個以上を互いに電気的接続すると
    共に外部接続導体に接続する内部接続導体を備え
    た半導体装置において、前記内部接続導体は前記
    半導体素子が接続される箇所近傍から立ち上がる
    脚部を有し、該脚部と脚部との間に切り込みを備
    えることを特徴とする電力半導体装置。
JP1990124512U 1990-11-27 1990-11-27 Pending JPH0480065U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1990124512U JPH0480065U (ja) 1990-11-27 1990-11-27

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1990124512U JPH0480065U (ja) 1990-11-27 1990-11-27

Publications (1)

Publication Number Publication Date
JPH0480065U true JPH0480065U (ja) 1992-07-13

Family

ID=31872160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1990124512U Pending JPH0480065U (ja) 1990-11-27 1990-11-27

Country Status (1)

Country Link
JP (1) JPH0480065U (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2897165A4 (en) * 2012-09-12 2016-01-06 Calsonic Kansei Corp SEMICONDUCTOR COMPONENT

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03174747A (ja) * 1989-09-20 1991-07-29 Fuji Electric Co Ltd 半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03174747A (ja) * 1989-09-20 1991-07-29 Fuji Electric Co Ltd 半導体装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2897165A4 (en) * 2012-09-12 2016-01-06 Calsonic Kansei Corp SEMICONDUCTOR COMPONENT
US9607931B2 (en) 2012-09-12 2017-03-28 Calsonic Kansei Corporation Semiconductor device for suppressing a temperature increase in beam leads

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