JPH0446402A - Microwave integrated circuit device - Google Patents

Abstract

PURPOSE:To make the device small, to allow the device to cope with a required capacitance and to easily allow the device to cope with fine adjustment of the capacitance by providing a thin film capacitor and providing a chip capacitor or the like whose ground electrode is taken from an upper face electrode. CONSTITUTION:An input side DC blocking thin film capacitor 5 and a thin film capacitor 10 are arranged to a main line 2 and a capacitor connection line 12 provided on an input side dielectric base 1, an electrode is provided to both upper and lower faces of a dielectric body of the capacitor 10 and a chip capacitor 8, ground taken from the electrode of the upper faced, is arranged and the earth face 11 provided on the base 1 and the electrode of the upper face of the capacitor 8 are connected by a gold ribbon 9. Moreover, an output side dielectric base 13, similar to the case with the base 1, is provided with a main line 14, a capacitor connection line 23, an output DC block thin film capacitor 16, a thin film capacitor 21, a ground face 22, a chip capacitor 19 and a gold ribbon 20. Thus, miniaturization is attained, and the processing for required capacitance and fine adjustment of the capacitance is easily attained.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a microwave integrated circuit device used in a high frequency band.

Conventional microwave integrated circuit devices used in high frequency bands of 100 MHz or more include, for example, amplifier circuits and oscillator circuits using semiconductors. Among these, silicon transistors and G
A matching circuit for a power amplifier using an aAsFET (gallium arsenide field effect transistor) as an amplifying element will be discussed. The input/output impedance of the above semiconductor element is -C
It is very small, on the order of several ohms. However, the external high frequency circuit is usually 50Ω. Therefore, the above-mentioned matching circuit becomes necessary for the amplifier device.

A conventional microwave integrated circuit device will be explained below. As shown in FIG. 3, an input side bias circuit 6 is provided with a wire 7 for connecting the input side microstrip main line 2 and the input side external bias circuit on the input side dielectric substrate 1. Chip capacitor 24 for input side DC blocking
A stub 25 for input impedance matching and an island-like stub 26 for fine adjustment of input impedance are provided, and the wire 2
At 7, the stub 25 and the island-shaped stub 26 are connected.

Further, an output side bias circuit 1 is provided with a wire 18 for connecting the main line 14 of the output side microstrip and an output side external bias circuit on the output side dielectric substrate 13.
7, a chip capacitor 28 for blocking DC on the output side, a stub 29 for output impedance matching, and an island-like stub 30 for finely adjusting the output impedance are provided, and the stub 29 and the island-like stub 30 are connected with a wire 31.

Further, the main line 2 of the input side microstrip is connected to the input side of the transistor 4 by a wire 3, and the main line 14 of the output side microstrip is connected to the output side of the transistor 4 by a wire 15.

As mentioned above, impedance was adjusted by adding stubs to the microstrip main line, but this method of matching requires a very long stub, and the impedance changes depending on the position of the stub. Since the values are different, accurate adjustment is difficult. In order to improve this shortcoming, as shown in FIG. Solder it to the ground plane 11.

Further, an open-end stub 35 connecting the ground plane 22 and the chip capacitor 34 is provided on the output side dielectric substrate 13, and the other electrode of the chip capacitor 34 is soldered to the ground plane 22.

With this configuration, the length of the stub can be shortened, and it is also possible to correct impedance mismatch due to a difference in the mounting position (see, for example, Japanese Patent Laid-Open No. 137314/1982).

Problems to be Solved by the Invention However, in the conventional configuration described above, since an open-ended stub is used, there is a problem in that it is difficult to adjust this part, and since a large number of chip capacitors are used, it is difficult to adjust the shape sufficiently. The problem was that it could not be made smaller.

The present invention solves the above-mentioned conventional problems, and makes it possible to miniaturize a microwave integrated circuit device, accommodate the required capacity, and also accommodate fine adjustment of the capacity. The purpose of the present invention is to provide a wave integrated circuit device.

This is the means to solve the problem! In order to solve problem I, the microwave integrated circuit device of the present invention includes a microwave integrated circuit formed on a dielectric substrate and a thin film capacitor. It has a structure including a chip capacitor that is grounded from the electrode of the chip capacitor, and a structure in which an island-shaped electrode is added to the electrode on the top surface of the chip capacitor.

Operation This configuration allows you to use 1WA instead of a 1,000 knob capacitor.
A capacitor is used, and chip capacitors are placed on top of the single-film capacitor at necessary locations to achieve miniaturization and simplify adjustment.

Embodiment F An embodiment of the present invention will be described with reference to the drawings.

In FIGS. 1 and 2 showing an embodiment of the present invention, parts that are the same as those in the conventional example are given the same numbers and their explanations will be omitted.

As shown in FIGS. 1 and 2, a yi film capacitor 5 and a thin film capacitor 10 for blocking input DC current are connected to the main line 2 and capacitor connection line 12 provided on the dielectric substrate l on the input side, respectively. A chip capacitor 8 is disposed on the L of the thin film capacitor 10, with electrodes provided on both sides of the bottom of the dielectric, and grounded from the electrode on the top surface. The configuration is such that the provided ground plane 11 and the electrode on the top surface of the chip capacitor 8 are connected with a gold button 9. There is also a configuration in which the pattern of the electrodes on the top surface of the chip capacitor 8 is a pattern in which island-shaped electrodes are added.

As for the dielectric substrate 13 on the output side, the main line 14. Capacitor connection line 23. Output side DC blocking thin film capacitor 16, thin film capacitor 21. Earth surface 22. It is composed of a chip capacitor 19 and a gold ribbon 20.

As described above, according to this embodiment, a thin 11J capacitor is provided on a microwave integrated circuit formed on a dielectric substrate, electrodes are provided on both the upper and lower surfaces of the dielectric, and the ground is connected from the electrode on the negative side. The configuration with a chip capacitor of this type and the configuration with an island-like electrode added to the top electrode of the chip capacitor make it possible to perform impedance matching using a conventional stub, as well as with many lateral electrode type surface mount chip capacitors. By eliminating the use of capacitors, microwave integrated circuit devices can be made smaller, and by combining thin film capacitors and chip capacitors, it is possible to easily adapt to changes in the required capacitance due to changes in the type of transistor. Further, it is possible to easily handle fine adjustment of the capacity.

In the embodiment, an impedance matching circuit has been described, but it goes without saying that the present invention can also be applied to a bypass capacitor section or a DC blocking capacitor section of a bias circuit.

Effects of the Invention As is clear from the above description of the embodiments, the present invention has a thin film capacitor arranged in a microwave integrated circuit, electrodes provided on the upper and lower surfaces of a dielectric material, and a ground connected to an electrode on the upper surface. By arranging chip capacitors having the structure shown in FIG. 1, it is possible to realize an excellent microwave integrated circuit device which can be miniaturized and which can easily accommodate necessary capacitance and fine adjustment of capacitance.

[Brief explanation of drawings]

FIG. 1 is a plan view showing the configuration of a microwave integrated circuit device according to an embodiment of the present invention, FIG. 2 is a perspective view showing the same part, and FIG.
1 and 4 are plan views showing the configuration of a conventional microwave integrated circuit device. 1.13... Dielectric substrate, 2.14 Old... Main line, 3.15... Wire, 4 Old... Transistor, 5゜10.16.21... ... Thin film capacitor, 8,19... Chip capacitor, 9,2
o...Gold ribbon, 11.22...Earth surface, 12.23...Old...Line for connecting capacitors. Name of agent: Patent attorney Shigetaka Awano and one other person
・-Tgx≧E De, total-Chief knowledge JO・w, tt-J for snake Gosodeno 7 n, tt-m-Earth surface +t, tj-・-Kokodesisu 11 also used for cormorant 3 Figure 4 Diagram

Claims (2)

[Claims] (1) A thin film capacitor is provided in a microwave integrated circuit formed on a dielectric substrate, and a chip capacitor is provided on the thin film capacitor with electrodes provided on both the upper and lower surfaces of the dielectric and grounded from the electrode on the upper surface of the thin film capacitor. Microwave integrated circuit device. (2) The microwave integrated circuit device according to claim 1, wherein an island-shaped electrode is added to the electrode on the upper surface of the chip capacitor.