JPH0445236Y2 - - Google Patents
Info
- Publication number
- JPH0445236Y2 JPH0445236Y2 JP1986153874U JP15387486U JPH0445236Y2 JP H0445236 Y2 JPH0445236 Y2 JP H0445236Y2 JP 1986153874 U JP1986153874 U JP 1986153874U JP 15387486 U JP15387486 U JP 15387486U JP H0445236 Y2 JPH0445236 Y2 JP H0445236Y2
- Authority
- JP
- Japan
- Prior art keywords
- ray
- thin film
- transparent thin
- window
- wafer substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986153874U JPH0445236Y2 (enExample) | 1986-10-07 | 1986-10-07 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986153874U JPH0445236Y2 (enExample) | 1986-10-07 | 1986-10-07 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6359321U JPS6359321U (enExample) | 1988-04-20 |
| JPH0445236Y2 true JPH0445236Y2 (enExample) | 1992-10-23 |
Family
ID=31073153
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1986153874U Expired JPH0445236Y2 (enExample) | 1986-10-07 | 1986-10-07 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0445236Y2 (enExample) |
-
1986
- 1986-10-07 JP JP1986153874U patent/JPH0445236Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6359321U (enExample) | 1988-04-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11249384B2 (en) | Mask for EUV lithography and method of manufacturing the same | |
| JP2527890B2 (ja) | マスク、その製造方法及びタ―ゲット基板をレ―ザ処理する方法 | |
| JP2979667B2 (ja) | 反射型のx線露光用マスク | |
| KR100526527B1 (ko) | 포토마스크와 그를 이용한 마스크 패턴 형성 방법 | |
| JPH03235321A (ja) | X線露光用マスク | |
| JP2731177B2 (ja) | フォトマスク | |
| JPH06252035A (ja) | X線マスクの製造方法 | |
| JP2783582B2 (ja) | フォトマスク | |
| JP2002351049A (ja) | フォトマスクおよびその製造方法 | |
| JP3110955B2 (ja) | 荷電粒子線露光用マスク製造方法 | |
| JP3209638B2 (ja) | X線露光用マスク | |
| JPS59163825A (ja) | X線露光マスクおよびその製造方法 | |
| JPH0737779A (ja) | X線露光用マスクとそのマスクブランク | |
| JPH0527413A (ja) | 露光装置用ホトマスク | |
| JPH02101464A (ja) | パターン形成方法 | |
| JPH04216553A (ja) | 半導体製造用マスク | |
| JPH0385544A (ja) | レジストパターン形成方法 | |
| JPS6120329A (ja) | X線露光用マスク | |
| Pawlak et al. | A simple procedure for the fabrication of Si3N4 windows | |
| JPS5962855A (ja) | X線露光用マスク | |
| KR920005782B1 (ko) | O₂/He 플라즈마를 이용한 실리레이티드 포토레지스트(silylated photoresist)의 RIE 건식현상공정 | |
| SU447110A1 (ru) | Способ получени линейных изображений | |
| JP2635613B2 (ja) | レジストパターン形成方法 | |
| JPH04294519A (ja) | X線マスクの製造方法 | |
| JPS63138736A (ja) | レジストのパタ−ニング方法 |