JPH0445236Y2 - - Google Patents
Info
- Publication number
- JPH0445236Y2 JPH0445236Y2 JP1986153874U JP15387486U JPH0445236Y2 JP H0445236 Y2 JPH0445236 Y2 JP H0445236Y2 JP 1986153874 U JP1986153874 U JP 1986153874U JP 15387486 U JP15387486 U JP 15387486U JP H0445236 Y2 JPH0445236 Y2 JP H0445236Y2
- Authority
- JP
- Japan
- Prior art keywords
- ray
- thin film
- transparent thin
- window
- wafer substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 25
- 239000013078 crystal Substances 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000011358 absorbing material Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 21
- 238000005530 etching Methods 0.000 description 17
- 238000005516 engineering process Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986153874U JPH0445236Y2 (enrdf_load_stackoverflow) | 1986-10-07 | 1986-10-07 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986153874U JPH0445236Y2 (enrdf_load_stackoverflow) | 1986-10-07 | 1986-10-07 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6359321U JPS6359321U (enrdf_load_stackoverflow) | 1988-04-20 |
| JPH0445236Y2 true JPH0445236Y2 (enrdf_load_stackoverflow) | 1992-10-23 |
Family
ID=31073153
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1986153874U Expired JPH0445236Y2 (enrdf_load_stackoverflow) | 1986-10-07 | 1986-10-07 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0445236Y2 (enrdf_load_stackoverflow) |
-
1986
- 1986-10-07 JP JP1986153874U patent/JPH0445236Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6359321U (enrdf_load_stackoverflow) | 1988-04-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11249384B2 (en) | Mask for EUV lithography and method of manufacturing the same | |
| JP2527890B2 (ja) | マスク、その製造方法及びタ―ゲット基板をレ―ザ処理する方法 | |
| JP2979667B2 (ja) | 反射型のｘ線露光用マスク | |
| JPH0445236Y2 (enrdf_load_stackoverflow) | ||
| JP2731177B2 (ja) | フォトマスク | |
| JPS61102738A (ja) | レジスト膜パタ−ンの形成方法 | |
| JPH03235321A (ja) | Ｘ線露光用マスク | |
| JP2783582B2 (ja) | フォトマスク | |
| JPS59141230A (ja) | パタ−ン形成方法 | |
| JP3209638B2 (ja) | Ｘ線露光用マスク | |
| JPH0458245A (ja) | 微細パターン形成用マスク及びその製造方法 | |
| JPH0737779A (ja) | Ｘ線露光用マスクとそのマスクブランク | |
| JPH0527413A (ja) | 露光装置用ホトマスク | |
| JPH0368531B2 (enrdf_load_stackoverflow) | ||
| JPH0385544A (ja) | レジストパターン形成方法 | |
| JPS6120329A (ja) | Ｘ線露光用マスク | |
| Pawlak et al. | A simple procedure for the fabrication of Si3N4 windows | |
| KR920005782B1 (ko) | O₂/He 플라즈마를 이용한 실리레이티드 포토레지스트(silylated photoresist)의 RIE 건식현상공정 | |
| JPH02101464A (ja) | パターン形成方法 | |
| SU447110A1 (ru) | Способ получени линейных изображений | |
| JP3451431B2 (ja) | Ｘ線露光用マスク及びその製造方法 | |
| JPS63138736A (ja) | レジストのパタ−ニング方法 | |
| JPH0620928A (ja) | Ｘ線露光用マスクの製造方法 | |
| JPS6255934A (ja) | 樹脂パタ−ンの形成方法 | |
| JPS62217616A (ja) | Ｘ線マスクの製造方法 |