JPH0444141U - - Google Patents
Info
- Publication number
- JPH0444141U JPH0444141U JP8600390U JP8600390U JPH0444141U JP H0444141 U JPH0444141 U JP H0444141U JP 8600390 U JP8600390 U JP 8600390U JP 8600390 U JP8600390 U JP 8600390U JP H0444141 U JPH0444141 U JP H0444141U
- Authority
- JP
- Japan
- Prior art keywords
- passivation film
- silicon nitride
- superimposing
- cover
- utility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 238000002161 passivation Methods 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
Description
第１図は本考案の一実施例を示す概略製作工程
を示す図である。 １……基板、２……ＩＣ部品、３……絶縁膜、
４……配線、５，６……プラズマシリコン窒化膜
。
を示す図である。 １……基板、２……ＩＣ部品、３……絶縁膜、
４……配線、５，６……プラズマシリコン窒化膜
。
Claims (1)
- ＩＣの表面を覆つて形成されるパツシベーシヨ
ン膜において、前記パツシベーシヨン膜は引張り
応力と圧縮応力を有するプラズマシリコン窒化膜
を重畳して形成したことを特徴とするパツシベー
シヨン膜。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8600390U JPH0444141U (ja) | 1990-08-15 | 1990-08-15 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8600390U JPH0444141U (ja) | 1990-08-15 | 1990-08-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0444141U true JPH0444141U (ja) | 1992-04-15 |
Family
ID=31817425
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8600390U Pending JPH0444141U (ja) | 1990-08-15 | 1990-08-15 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0444141U (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008300678A (ja) * | 2007-05-31 | 2008-12-11 | Oki Electric Ind Co Ltd | 半導体素子の製造方法、及び半導体素子 |
-
1990
- 1990-08-15 JP JP8600390U patent/JPH0444141U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008300678A (ja) * | 2007-05-31 | 2008-12-11 | Oki Electric Ind Co Ltd | 半導体素子の製造方法、及び半導体素子 |