JPH0442530A - Ultrasonic cleaning device - Google Patents
Ultrasonic cleaning deviceInfo
- Publication number
- JPH0442530A JPH0442530A JP15028790A JP15028790A JPH0442530A JP H0442530 A JPH0442530 A JP H0442530A JP 15028790 A JP15028790 A JP 15028790A JP 15028790 A JP15028790 A JP 15028790A JP H0442530 A JPH0442530 A JP H0442530A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- ultrasonic
- tank
- cleaned
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004506 ultrasonic cleaning Methods 0.000 title claims description 28
- 238000004140 cleaning Methods 0.000 claims abstract description 67
- 239000007788 liquid Substances 0.000 claims abstract description 30
- 239000002344 surface layer Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 abstract description 13
- 239000000463 material Substances 0.000 abstract description 9
- 239000000356 contaminant Substances 0.000 abstract description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 15
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 241000255628 Tabanidae Species 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
洗浄槽外に表層部を連続的に溢れ出す当該洗浄槽内の洗
浄用液体に超音波エネルギーを供給し、洗浄用液体中に
浸漬した被洗浄物体を洗浄する超音波洗浄装置に関し、
洗浄槽内の洗浄用液体中で被洗浄物体から離脱させた物
質が当該被洗浄物体に再付着することを防止できる超音
波洗浄装置の提供を目的とし、洗浄槽内の底部中央部に
洗浄用液体を、洗浄槽内で上方向に噴出する垂直流発生
ノズルを設けて超音波洗浄装置を構成する。[Detailed Description of the Invention] [Summary] Ultrasonic energy is supplied to the cleaning liquid in the cleaning tank whose surface layer continuously overflows outside the cleaning tank, and the object to be cleaned immersed in the cleaning liquid is Regarding ultrasonic cleaning equipment for cleaning, the purpose of the present invention is to provide an ultrasonic cleaning equipment that can prevent substances separated from an object to be cleaned in the cleaning liquid in the cleaning tank from re-adhering to the object to be cleaned. An ultrasonic cleaning device is constructed by providing a vertical flow generating nozzle in the center of the bottom of the cleaning tank that sprays cleaning liquid upward in the cleaning tank.
本発明は、超音波洗浄装置、特に洗浄槽内の洗浄用液体
中で被洗浄物体から離脱させた物質が当該被洗浄物体に
再付着することを防止できる超音波洗浄装置に関する。The present invention relates to an ultrasonic cleaning device, and particularly to an ultrasonic cleaning device that can prevent substances separated from an object to be cleaned in a cleaning liquid in a cleaning tank from re-adhering to the object to be cleaned.
半導体装置製造のウェーハブロセス工程における半導体
ウェーハや露光用マスク等の洗浄は、超音波洗浄装置を
使用して行うのが一般的である。2. Description of the Related Art In a wafer processing process for manufacturing semiconductor devices, semiconductor wafers, exposure masks, and the like are generally cleaned using an ultrasonic cleaning device.
次に、半導体ウェーハや露光用マスク等の洗浄に使用さ
れていた従来の超音波洗浄装置を図面を参照しながら説
明する。Next, a conventional ultrasonic cleaning apparatus used for cleaning semiconductor wafers, exposure masks, etc. will be described with reference to the drawings.
第2図は、従来の超音波洗浄装置の要部概略側断面図で
ある。FIG. 2 is a schematic side sectional view of the main parts of a conventional ultrasonic cleaning device.
尚、同じ部品・材料に対しては全図を通して同じ記号を
付与しである。Note that the same symbols are given to the same parts and materials throughout the drawings.
従来の超音波洗浄装置は、第2図に示すように洗浄槽2
0、洗浄槽20の金属製の筒体20aを貫通して当該筒
体20aに溶接されて洗浄液導入管21、振動板22a
を上方にして洗浄槽20の底板20bに固定された超音
波振動子22、超音波振動子22に接続した超音波発振
器23を含んで構成されている。The conventional ultrasonic cleaning device has a cleaning tank 2 as shown in Fig. 2.
0, a cleaning liquid introduction pipe 21 that penetrates the metal cylinder 20a of the cleaning tank 20 and is welded to the cylinder 20a, and a vibration plate 22a.
It is configured to include an ultrasonic transducer 22 fixed to the bottom plate 20b of the cleaning tank 20 with the top facing upward, and an ultrasonic oscillator 23 connected to the ultrasonic transducer 22.
かかる超音波洗浄装置により被洗浄物体、例えば半導体
ウェーハ31を洗浄する方法を、工程順に説明する。A method of cleaning an object to be cleaned, for example, a semiconductor wafer 31, using such an ultrasonic cleaning apparatus will be explained step by step.
まず、複数の半導体ウェーハ31を離隔且つ垂直にして
収納した洗浄治具32を、洗浄液導入管21がら連続的
に供給されて洗浄槽20の上端開口部からオーバフロー
している洗浄用液体、例えば純水30中に浸漬する。First, a cleaning jig 32 in which a plurality of semiconductor wafers 31 are housed vertically and separated from each other is cleaned using a cleaning liquid that is continuously supplied from the cleaning liquid introduction pipe 21 and overflows from the upper end opening of the cleaning tank 20, for example, pure water. Immerse in water 30.
そして、洗浄治具32を純水30中へ浸漬した直後に超
音波発振器23を動作させると超音波振動子22は、振
動板22aを振動させて超音波エネルギーを純水30に
供給する。When the ultrasonic oscillator 23 is operated immediately after the cleaning jig 32 is immersed in the pure water 30, the ultrasonic vibrator 22 vibrates the diaphragm 22a and supplies ultrasonic energy to the pure water 30.
すると、純水30の分子は、半導体ウェーハ31の表面
に激しく衝突し、半導体ウェーハ31の表面から汚れ物
質を離脱させて、半導体ウェーハ31の表面を洗浄する
こととなる。Then, the molecules of the pure water 30 violently collide with the surface of the semiconductor wafer 31, remove contaminants from the surface of the semiconductor wafer 31, and clean the surface of the semiconductor wafer 31.
前述したように従来の超音波洗浄装置は、洗浄槽20の
筒体20aに洗浄液導入管21を配設し、この洗浄液導
入管21から純水30を矢印Hで示すように水平に噴出
していた(第2図参照)。As mentioned above, in the conventional ultrasonic cleaning device, the cleaning liquid introduction pipe 21 is arranged in the cylindrical body 20a of the cleaning tank 20, and the pure water 30 is jetted horizontally from the cleaning liquid introduction pipe 21 as shown by the arrow H. (See Figure 2).
この洗浄液導入管21から噴出する純水30は、洗浄槽
20内の純水30を攪拌することとなる。The pure water 30 spouted from the cleaning liquid introduction pipe 21 stirs the pure water 30 in the cleaning tank 20 .
このため、汚れ物質を含んで純度の低下した純水30は
、汚れ物質を離脱して綺麗にした半導体つ工−ハ31表
面に接触し、−旦は洗浄された半導体ウェーハ31の表
面に汚れ物質を再付着させるという問題があった。Therefore, the purified water 30 containing contaminants and having a reduced purity comes into contact with the surface of the semiconductor wafer 31 which has been cleansed by removing the contaminants, and the surface of the semiconductor wafer 31 that has been cleaned becomes contaminated. There was a problem with redepositing the material.
本発明は、このような問題を解決するためになされたも
のであって、その目的は洗浄槽内の洗浄用液体中で被洗
浄物体から離脱させた物質が当該被洗浄物体に再付着す
ることを防止できる超音波洗浄装置の提供にある。The present invention was made to solve such problems, and its purpose is to prevent substances separated from the object to be cleaned in the cleaning liquid in the cleaning tank from re-adhering to the object to be cleaned. An object of the present invention is to provide an ultrasonic cleaning device that can prevent such problems.
前記目的は、第1図に示す如く洗浄槽lo外に表層部を
連続的に溢れ出す当該洗浄槽lo内の洗浄用液体30に
超音波エネルギーを供給し、洗浄用液体30中に浸漬し
た被洗浄物体31を洗浄する超音波洗浄装置において、
洗浄槽10内の底部中央部に洗浄用液体3oを、洗浄槽
10内で上方向に噴出する垂直流発生ノズル13が設け
られていることを特徴とする超音波洗浄装置によって達
成される。The purpose is to supply ultrasonic energy to the cleaning liquid 30 in the cleaning tank LO whose surface layer continuously overflows outside the cleaning tank LO, as shown in FIG. The ultrasonic cleaning device for cleaning the cleaning object 31 is characterized in that a vertical flow generating nozzle 13 is provided at the center of the bottom of the cleaning tank 10 to spray the cleaning liquid 3o upward in the cleaning tank 10. This is achieved using an ultrasonic cleaning device.
本発明の超音波洗浄装置は、洗浄槽lo内の底部中央部
に洗浄用液体30を上方向垂直に噴流する垂直流発生ノ
ズル13が設けられている。The ultrasonic cleaning apparatus of the present invention is provided with a vertical flow generating nozzle 13 that jets a cleaning liquid 30 vertically upward at the center of the bottom of the cleaning tank lo.
従って、この垂直流発生ノズル13がら噴出されて、被
洗浄物体31から離脱した汚れ物質を含んだ洗浄用液体
30は、洗浄槽10内を層流状態とな、って上昇し、洗
浄槽10の上端の開口部から溢れ出ることとなる。Therefore, the cleaning liquid 30 containing the dirt substances ejected from the vertical flow generating nozzle 13 and separated from the object 31 to be cleaned rises in the cleaning tank 10 in a laminar flow state, and It will overflow from the opening at the top of the.
このため、被洗浄物体31の表面は、被洗浄物体31か
ら離脱した汚れ物質を含んだ洗浄用液体3oと接触する
ことなく、汚れ物質を含まない洗浄用液体30と絶えず
接触する。Therefore, the surface of the object to be cleaned 31 does not come into contact with the cleaning liquid 3o containing the soiled substances that has separated from the object to be cleaned 31, but constantly contacts the cleaning liquid 30 that does not contain any dirty substances.
斯くして、被洗浄物体31の表面は、汚れ物質の再付着
がない状態で仕上げられることとなる。In this way, the surface of the object to be cleaned 31 is finished without re-deposition of dirt substances.
以下、本発明の一実施例について図面を参照しながら説
明する。An embodiment of the present invention will be described below with reference to the drawings.
第1図は、本発明の一実施例の超音波洗浄装置を説明す
るための図で、同図(a)は装置の要部概略側断面図、
同図(b)は垂直流発生ノズルの平面図である。FIG. 1 is a diagram for explaining an ultrasonic cleaning device according to an embodiment of the present invention, and FIG. 1 (a) is a schematic side sectional view of the main part of the device;
FIG. 5B is a plan view of the vertical flow generating nozzle.
この超音波洗浄装置は、同図(a)及び同図(b)に示
す如く金属製の筒体10aの下端開口部を超音波振動子
12の振動板12a及び垂直流発生ノズルとで閉塞する
が如くして構成した洗浄槽10と、洗浄槽10内に洗浄
用液体、例えば純水30を矢印Hの如く水平方向に噴出
する洗浄液導入管11と、同心円状の開口部を有する振
動板12aを弾性気密パツキン10bを介して筒体10
aの下端の開口端に連結した超音波振動子12と、
振動板12aの開口部に挿入且つ弾性気密パツキン10
bを介して超音波振動子12に連結し、純水30を矢印
Vで示す如く上方垂直方向に噴出する噴出口13aを有
する垂直流発生ノズル13と、超音波振動子12に超音
波周波数の電力を供給して、当該超音波振動子12の振
動板12aを振動させることにより洗浄槽10内の純水
30に超音波エネルギーを供給する超音波発振器14を
含ませて構成したものである。This ultrasonic cleaning device closes the lower end opening of a metal cylindrical body 10a with a diaphragm 12a of an ultrasonic vibrator 12 and a vertical flow generating nozzle, as shown in FIGS. A cleaning tank 10 configured as above, a cleaning liquid introduction pipe 11 that spouts a cleaning liquid, for example, pure water 30, horizontally as shown by arrow H into the cleaning tank 10, and a diaphragm 12a having a concentric opening. The cylindrical body 10 is inserted through the elastic airtight packing 10b.
an ultrasonic transducer 12 connected to the open end at the lower end of the diaphragm 12a; and an elastic airtight packing 10 inserted into the opening of the diaphragm 12a.
A vertical flow generating nozzle 13 is connected to the ultrasonic transducer 12 via a vertical flow nozzle 13 and has a spout 13a that ejects pure water 30 in an upward vertical direction as shown by an arrow V. It is configured to include an ultrasonic oscillator 14 that supplies ultrasonic energy to the pure water 30 in the cleaning tank 10 by supplying electric power and vibrating the diaphragm 12a of the ultrasonic vibrator 12.
この超音波洗浄装置による被洗浄物体の洗浄方法は、第
2図により説明した従来の超音波洗浄装置の洗浄方法と
同じ手順により行われるので、此処での説明は割愛する
こととする。The method of cleaning an object to be cleaned using this ultrasonic cleaning device is carried out in the same procedure as the cleaning method of the conventional ultrasonic cleaning device explained with reference to FIG. 2, so a description thereof will be omitted here.
但し、本発明の一実施例の超音波洗浄装置においては、
垂直流発生ノズル13から上方垂直方向に噴出された純
水30は、層流となって上昇し、半導体ウェーハ31等
から離脱した物質とともに洗浄槽10の上端の開口部か
ら溢水30aとなって洗浄槽10から流れ出ることとな
る。However, in the ultrasonic cleaning device according to one embodiment of the present invention,
The pure water 30 ejected vertically upward from the vertical flow generation nozzle 13 rises as a laminar flow, and together with the substances separated from the semiconductor wafers 31, etc., overflows from the opening at the upper end of the cleaning tank 10 and becomes water 30a for cleaning. It will flow out from the tank 10.
従って、本発明の超音波洗浄装置では、上記の如く洗浄
槽10内で純水30の攪拌状態が発生しないために、−
旦は洗浄されて汚れ物質を離脱された半導体ウェーハな
どの被洗浄物体の表面に離脱した汚れ物質が再付着する
ことがなくなる。Therefore, in the ultrasonic cleaning apparatus of the present invention, since the pure water 30 is not stirred in the cleaning tank 10 as described above, -
The removed dirt substances are prevented from re-adhering to the surface of the object to be cleaned, such as a semiconductor wafer, which has been previously cleaned to remove the dirt substances.
斯くして、本発明の超音波洗浄装置は、被洗浄物体の表
面を極めて綺麗な状態に仕上げすることを可能とするも
のである。In this way, the ultrasonic cleaning apparatus of the present invention makes it possible to finish the surface of the object to be cleaned in an extremely clean state.
以上の説明から明らかなように本発明によれば、洗浄槽
内の洗浄用液体中で被洗浄物体の表面から離脱させた物
質が、この被洗浄物体の表面に再付着するのを防止でき
る超音波洗浄装置を提供することができる
従って、本発明の超音波洗浄装置で半導体つ工−ハ等を
洗浄すれば、半導体ウェーハ等の表面は汚れ物質の付着
がない極めて綺麗な状態で仕上げされることとなる。As is clear from the above description, according to the present invention, a superfluous material that can prevent substances separated from the surface of the object to be cleaned in the cleaning liquid in the cleaning tank from re-adhering to the surface of the object to be cleaned. Therefore, if a semiconductor wafer, etc. is cleaned with the ultrasonic cleaning device of the present invention, the surface of the semiconductor wafer, etc. will be finished in an extremely clean state without any contaminants attached. It happens.
31は被洗浄物体く半導体ウェーハ)、32は洗浄治具
をそれぞれ示す。Reference numeral 31 indicates an object to be cleaned (semiconductor wafer), and 32 indicates a cleaning jig.
第1図は、本発明の一実施例の超音波洗浄装置を説明す
るための図、
第2図は、従来の超音波洗浄装置の要部概略側断面図で
ある。
図において、
10と20は洗浄槽、
11と21は洗浄液導入管、
12と22は超音波振動子、
13は垂直流発生ノズル、
13aは噴出口、
14と23は超音波発振器、
30は洗浄用液体(純水)、
(0’ 1tの?9[1klF(#ljmXjtb)t
i>&#tノア1Ln千6むの滞Aと明の一哄乙創シθ
ゴっ超11り皮Lf家1袋り虻’J’ffta、n褐C
7を朱/1M、+fi3tifgfl p+ t−qf
fl n剰dlrfo 図$2図FIG. 1 is a diagram for explaining an ultrasonic cleaning apparatus according to an embodiment of the present invention, and FIG. 2 is a schematic side sectional view of a main part of a conventional ultrasonic cleaning apparatus. In the figure, 10 and 20 are cleaning tanks, 11 and 21 are cleaning liquid introduction pipes, 12 and 22 are ultrasonic vibrators, 13 is a vertical flow generation nozzle, 13a is a spout, 14 and 23 are ultrasonic oscillators, and 30 is a cleaning tube. liquid (pure water), (0'1t?9[1klF(#ljmXjtb)t
i>&#tNoah 1Ln 1,600 minutes A and Ming's song Otsu creation θ
Go super 11 skins Lf family 1 bag of horseflies 'J'ffta, n brown C
7 is vermilion/1M, +fi3tifgfl p+ t-qf
fl n surplus dlrfo figure $2 figure
Claims (1)
浄槽(10)内の洗浄用液体(30)に超音波エネルギ
ーを供給し、洗浄用液体(30)中に浸漬した被洗浄物
体(31)を洗浄する超音波洗浄装置において、洗浄槽
(10)内の底部中央部に洗浄用液体(30)を当該洗
浄槽(10)内で上方向に噴出する垂直流発生ノズル(
13)が設けられていることを特徴とする超音波洗浄装
置。Ultrasonic energy is supplied to the cleaning liquid (30) in the cleaning tank (10) whose surface layer continuously overflows outside the cleaning tank (10), and the object to be cleaned is immersed in the cleaning liquid (30). In an ultrasonic cleaning device for cleaning (31), a vertical flow generation nozzle (
13) An ultrasonic cleaning device characterized by being provided with.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15028790A JPH0442530A (en) | 1990-06-08 | 1990-06-08 | Ultrasonic cleaning device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15028790A JPH0442530A (en) | 1990-06-08 | 1990-06-08 | Ultrasonic cleaning device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0442530A true JPH0442530A (en) | 1992-02-13 |
Family
ID=15493685
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15028790A Pending JPH0442530A (en) | 1990-06-08 | 1990-06-08 | Ultrasonic cleaning device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0442530A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5927302A (en) * | 1992-04-07 | 1999-07-27 | Fujitsu Limited | Method for rinsing plate-shaped articles and cleaning bath and cleaning equipment used in the same |
KR100462995B1 (en) * | 2002-01-30 | 2004-12-23 | 윈텍 이엔지(주) | An apparatus for polishing the inner wall of the through hole of a silicon cathode |
DE19742680B4 (en) * | 1997-09-26 | 2006-03-02 | Siltronic Ag | Cleaning process for disc-shaped material |
US7208858B2 (en) * | 2003-02-04 | 2007-04-24 | Forward Technology A Crest Group Company | Ultrasonic cleaning tank |
-
1990
- 1990-06-08 JP JP15028790A patent/JPH0442530A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5927302A (en) * | 1992-04-07 | 1999-07-27 | Fujitsu Limited | Method for rinsing plate-shaped articles and cleaning bath and cleaning equipment used in the same |
DE19742680B4 (en) * | 1997-09-26 | 2006-03-02 | Siltronic Ag | Cleaning process for disc-shaped material |
KR100462995B1 (en) * | 2002-01-30 | 2004-12-23 | 윈텍 이엔지(주) | An apparatus for polishing the inner wall of the through hole of a silicon cathode |
US7208858B2 (en) * | 2003-02-04 | 2007-04-24 | Forward Technology A Crest Group Company | Ultrasonic cleaning tank |
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