JPH0440872B2 - - Google Patents

Info

Publication number
JPH0440872B2
JPH0440872B2 JP60197013A JP19701385A JPH0440872B2 JP H0440872 B2 JPH0440872 B2 JP H0440872B2 JP 60197013 A JP60197013 A JP 60197013A JP 19701385 A JP19701385 A JP 19701385A JP H0440872 B2 JPH0440872 B2 JP H0440872B2
Authority
JP
Japan
Prior art keywords
layer
active layer
semiconductor
refractive index
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60197013A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6255985A (ja
Inventor
Isao Hino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP60197013A priority Critical patent/JPS6255985A/ja
Publication of JPS6255985A publication Critical patent/JPS6255985A/ja
Publication of JPH0440872B2 publication Critical patent/JPH0440872B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP60197013A 1985-09-05 1985-09-05 半導体発光素子 Granted JPS6255985A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60197013A JPS6255985A (ja) 1985-09-05 1985-09-05 半導体発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60197013A JPS6255985A (ja) 1985-09-05 1985-09-05 半導体発光素子

Publications (2)

Publication Number Publication Date
JPS6255985A JPS6255985A (ja) 1987-03-11
JPH0440872B2 true JPH0440872B2 (enrdf_load_html_response) 1992-07-06

Family

ID=16367330

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60197013A Granted JPS6255985A (ja) 1985-09-05 1985-09-05 半導体発光素子

Country Status (1)

Country Link
JP (1) JPS6255985A (enrdf_load_html_response)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2616272B1 (fr) * 1987-06-02 1990-10-26 Thomson Csf Dispositif en materiaux semiconducteurs realise sur un substrat de parametre de maille different, application a un laser et procede de realisation

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS574189A (en) * 1980-06-10 1982-01-09 Matsushita Electric Ind Co Ltd Semiconductor laser device

Also Published As

Publication number Publication date
JPS6255985A (ja) 1987-03-11

Similar Documents

Publication Publication Date Title
EP0661782B1 (en) A semiconductor laser
US4750183A (en) Semiconductor laser device
JPH0418476B2 (enrdf_load_html_response)
EP0989643B1 (en) Semiconductor light-emitting device and manufacturing method for the same
US5042049A (en) Semiconductor optical device
JP2558768B2 (ja) 半導体レーザ装置
JPH0732285B2 (ja) 半導体レ−ザ装置
US4916708A (en) Semiconductor light-emitting devices
JP4045639B2 (ja) 半導体レーザおよび半導体発光素子
US5574741A (en) Semiconductor laser with superlattice cladding layer
US4761790A (en) Optical semiconductor device
JP5381692B2 (ja) 半導体発光素子
JP2721185B2 (ja) リブ導波路型発光半導体装置
JPH0654821B2 (ja) 半導体発光素子
JPH04350988A (ja) 量子井戸構造発光素子
JP2001144375A (ja) 半導体発光素子
JPH0440872B2 (enrdf_load_html_response)
JP2748570B2 (ja) 半導体レーザ素子
US5608751A (en) Laser diode and process for producing the same
JP4154757B2 (ja) ＡｌＧａＡｓ層の成長方法および半導体レーザの製造方法
JP3033333B2 (ja) 半導体レーザ素子
JPH0669589A (ja) 半導体レーザ素子
JPH01184972A (ja) 半導体レーザ装置
WO1990004275A1 (en) Semiconductor light-emitting devices
JPH0529715A (ja) 歪量子井戸構造半導体素子