FR2616272B1 - Dispositif en materiaux semiconducteurs realise sur un substrat de parametre de maille different, application a un laser et procede de realisation - Google Patents

Dispositif en materiaux semiconducteurs realise sur un substrat de parametre de maille different, application a un laser et procede de realisation

Info

Publication number
FR2616272B1
FR2616272B1 FR8707709A FR8707709A FR2616272B1 FR 2616272 B1 FR2616272 B1 FR 2616272B1 FR 8707709 A FR8707709 A FR 8707709A FR 8707709 A FR8707709 A FR 8707709A FR 2616272 B1 FR2616272 B1 FR 2616272B1
Authority
FR
France
Prior art keywords
laser
producing
application
semiconductor material
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR8707709A
Other languages
English (en)
Other versions
FR2616272A1 (fr
Inventor
Manijeh Razeghi
Martin Defour
Franck Omnes
Philippe Maurel
Robert Bl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR8707709A priority Critical patent/FR2616272B1/fr
Priority to PCT/FR1988/000269 priority patent/WO1988010007A1/fr
Priority to EP88904979A priority patent/EP0316414A1/fr
Priority to JP63504627A priority patent/JPH01503583A/ja
Priority to US07/313,974 priority patent/US5012476A/en
Publication of FR2616272A1 publication Critical patent/FR2616272A1/fr
Application granted granted Critical
Publication of FR2616272B1 publication Critical patent/FR2616272B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02376—Carbon, e.g. diamond-like carbon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H01L21/02507—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H01L29/151—Compositional structures
    • H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
    • H01L29/155—Comprising only semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
    • H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0213—Sapphire, quartz or diamond based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Recrystallisation Techniques (AREA)
  • Semiconductor Lasers (AREA)
FR8707709A 1987-06-02 1987-06-02 Dispositif en materiaux semiconducteurs realise sur un substrat de parametre de maille different, application a un laser et procede de realisation Expired - Lifetime FR2616272B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR8707709A FR2616272B1 (fr) 1987-06-02 1987-06-02 Dispositif en materiaux semiconducteurs realise sur un substrat de parametre de maille different, application a un laser et procede de realisation
PCT/FR1988/000269 WO1988010007A1 (fr) 1987-06-02 1988-05-27 Heterostructure, application a un laser et procede de realisation
EP88904979A EP0316414A1 (fr) 1987-06-02 1988-05-27 Heterostructure, application a un laser et procede de realisation
JP63504627A JPH01503583A (ja) 1987-06-02 1988-05-27 異なる格子パラメータを有する基板の上に形成された半導体装置、レーザへの応用および製造方法
US07/313,974 US5012476A (en) 1987-06-02 1988-05-27 Device of semiconductor materials formed on a substrate having a different lattice parameter and application to a laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8707709A FR2616272B1 (fr) 1987-06-02 1987-06-02 Dispositif en materiaux semiconducteurs realise sur un substrat de parametre de maille different, application a un laser et procede de realisation

Publications (2)

Publication Number Publication Date
FR2616272A1 FR2616272A1 (fr) 1988-12-09
FR2616272B1 true FR2616272B1 (fr) 1990-10-26

Family

ID=9351670

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8707709A Expired - Lifetime FR2616272B1 (fr) 1987-06-02 1987-06-02 Dispositif en materiaux semiconducteurs realise sur un substrat de parametre de maille different, application a un laser et procede de realisation

Country Status (5)

Country Link
US (1) US5012476A (fr)
EP (1) EP0316414A1 (fr)
JP (1) JPH01503583A (fr)
FR (1) FR2616272B1 (fr)
WO (1) WO1988010007A1 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2664056B2 (ja) * 1987-08-10 1997-10-15 住友電気工業株式会社 薄膜単結晶基板
US5373171A (en) * 1987-03-12 1994-12-13 Sumitomo Electric Industries, Ltd. Thin film single crystal substrate
EP0420188A1 (fr) * 1989-09-27 1991-04-03 Sumitomo Electric Industries, Ltd. Structure semi-conductrice à hétérojonction
US5371382A (en) * 1992-04-27 1994-12-06 Kobe Steel Usa, Inc. Amorphous silicon rectifying contact on diamond and method for making same
DE4310569A1 (de) * 1993-03-26 1994-09-29 Daimler Benz Ag Laserdiode
DE4310571A1 (de) * 1993-03-26 1994-09-29 Daimler Benz Ag Leuchtdiode
US5665977A (en) * 1994-02-16 1997-09-09 Sony Corporation Semiconductor light emitting device with defect decomposing and blocking layers
DE4415600A1 (de) * 1994-05-04 1995-11-30 Daimler Benz Ag Elektronisches Bauteil mit einer Halbleiter-Komposit-Struktur
FR2724769B1 (fr) * 1994-09-16 1996-12-06 Thomson Csf Procede de realisation de diodes laser a emission surfacique
FR2784185B1 (fr) 1998-10-06 2001-02-02 Thomson Csf Dispositif pour l'harmonisation entre une voie d'emission laser et une voie passive d'observation
DE10234704A1 (de) * 2002-07-30 2004-02-19 Osram Opto Semiconductors Gmbh Halbleitervorrichtung mit Kühlelement

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2371780A1 (fr) * 1976-11-22 1978-06-16 Mitsubishi Monsanto Chem Element electroluminescent et son procede de fabrication
JPS5837713B2 (ja) * 1978-12-01 1983-08-18 富士通株式会社 半導体レ−ザ−装置の製造方法
JPS5752185A (en) * 1980-05-20 1982-03-27 De Beers Ind Diamond Heat sink
US4639275A (en) * 1982-04-22 1987-01-27 The Board Of Trustees Of The University Of Illinois Forming disordered layer by controlled diffusion in heterojunction III-V semiconductor
JPH06105779B2 (ja) * 1983-02-28 1994-12-21 双葉電子工業株式会社 半導体装置及びその製造方法
US4727555A (en) * 1983-09-02 1988-02-23 Xerox Corporation Wavelength tuned quantum well lasers
JPS6255985A (ja) * 1985-09-05 1987-03-11 Nec Corp 半導体発光素子
JPH0732280B2 (ja) * 1985-09-26 1995-04-10 三菱電機株式会社 半導体レーザ装置
EP0221531A3 (fr) * 1985-11-06 1992-02-19 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Substrat isolé bon conducteur de chaleur et procédé pour sa fabrication

Also Published As

Publication number Publication date
FR2616272A1 (fr) 1988-12-09
JPH01503583A (ja) 1989-11-30
EP0316414A1 (fr) 1989-05-24
US5012476A (en) 1991-04-30
WO1988010007A1 (fr) 1988-12-15

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