JPH0440867B2 - - Google Patents
Info
- Publication number
- JPH0440867B2 JPH0440867B2 JP3586885A JP3586885A JPH0440867B2 JP H0440867 B2 JPH0440867 B2 JP H0440867B2 JP 3586885 A JP3586885 A JP 3586885A JP 3586885 A JP3586885 A JP 3586885A JP H0440867 B2 JPH0440867 B2 JP H0440867B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- region
- type
- mos transistor
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Protection Of Static Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3586885A JPS61194874A (ja) | 1985-02-25 | 1985-02-25 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3586885A JPS61194874A (ja) | 1985-02-25 | 1985-02-25 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61194874A JPS61194874A (ja) | 1986-08-29 |
| JPH0440867B2 true JPH0440867B2 (pt) | 1992-07-06 |
Family
ID=12453965
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3586885A Granted JPS61194874A (ja) | 1985-02-25 | 1985-02-25 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61194874A (pt) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8810973D0 (en) * | 1988-05-10 | 1988-06-15 | Stc Plc | Improvements in integrated circuits |
| JP2006165370A (ja) * | 2004-12-09 | 2006-06-22 | New Japan Radio Co Ltd | 半導体装置及びその製造方法 |
-
1985
- 1985-02-25 JP JP3586885A patent/JPS61194874A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61194874A (ja) | 1986-08-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS61182264A (ja) | 縦型ｍｏｓトランジスタ | |
| JPS6164166A (ja) | 半導体装置 | |
| JPS63166269A (ja) | 相補形横方向絶縁ゲート整流器 | |
| JPS61296770A (ja) | 絶縁ゲ−ト電界効果型半導体装置 | |
| JPH0440867B2 (pt) | ||
| JPH01214055A (ja) | 静電破壊保護装置 | |
| JPS6362904B2 (pt) | ||
| JP3211871B2 (ja) | 入出力保護回路 | |
| JP3217552B2 (ja) | 横型高耐圧半導体素子 | |
| JPH0478162A (ja) | 集積回路用保護装置 | |
| JPH06334120A (ja) | 半導体装置 | |
| JPH06151716A (ja) | 半導体集積回路装置 | |
| JPH01185971A (ja) | 絶縁ゲート型半導体装置 | |
| JPH0525232Y2 (pt) | ||
| JPS61174672A (ja) | 縦型ｍｏｓトランジスタ | |
| JPH0456465B2 (pt) | ||
| JPH0530073B2 (pt) | ||
| JP2926785B2 (ja) | 半導体装置 | |
| JPS627160A (ja) | 半導体装置 | |
| JPH0337314B2 (pt) | ||
| JPH01273346A (ja) | 半導体装置 | |
| JPH0629466A (ja) | 半導体集積回路 | |
| JPS60153157A (ja) | バイポ−ラ集積回路 | |
| JPH0758759B2 (ja) | 半導体装置 | |
| JPS61296760A (ja) | 半導体装置 |