JPH0438717B2 - - Google Patents
Info
- Publication number
- JPH0438717B2 JPH0438717B2 JP1077486A JP1077486A JPH0438717B2 JP H0438717 B2 JPH0438717 B2 JP H0438717B2 JP 1077486 A JP1077486 A JP 1077486A JP 1077486 A JP1077486 A JP 1077486A JP H0438717 B2 JPH0438717 B2 JP H0438717B2
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- pedestal
- shaft
- single crystal
- crucible shaft
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 38
- 239000013078 crystal Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 239000000155 melt Substances 0.000 description 5
- 238000004804 winding Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011796 hollow space material Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1077486A JPS62167285A (ja) | 1986-01-20 | 1986-01-20 | ペデイスタル固定方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1077486A JPS62167285A (ja) | 1986-01-20 | 1986-01-20 | ペデイスタル固定方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62167285A JPS62167285A (ja) | 1987-07-23 |
JPH0438717B2 true JPH0438717B2 (enrdf_load_html_response) | 1992-06-25 |
Family
ID=11759675
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1077486A Granted JPS62167285A (ja) | 1986-01-20 | 1986-01-20 | ペデイスタル固定方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62167285A (enrdf_load_html_response) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2539121B2 (ja) * | 1991-09-19 | 1996-10-02 | 株式会社日立製作所 | 超伝導磁石 |
CN102312287A (zh) * | 2011-07-04 | 2012-01-11 | 浙江晶盛机电股份有限公司 | 具备改进的水冷却结构的坩埚轴 |
JP2016199440A (ja) * | 2015-04-13 | 2016-12-01 | 住友金属鉱山株式会社 | 結晶育成装置 |
-
1986
- 1986-01-20 JP JP1077486A patent/JPS62167285A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS62167285A (ja) | 1987-07-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5196173A (en) | Apparatus for process for growing crystals of semiconductor materials | |
CN105887186B (zh) | 硅单晶提拉设备与生长方法 | |
EP0139157A1 (en) | Apparatus for growing single crystals of dissociative compounds | |
US6001170A (en) | Process and apparatus for the growth of single crystals | |
JPH0438717B2 (enrdf_load_html_response) | ||
US4784715A (en) | Methods and apparatus for producing coherent or monolithic elements | |
US7195671B2 (en) | Thermal shield | |
US5840120A (en) | Apparatus for controlling nucleation of oxygen precipitates in silicon crystals | |
TW202325906A (zh) | 坩堝裝置、單晶爐裝置及其工作方法 | |
KR102355248B1 (ko) | 실리콘 단결정 잉곳의 성장 장치 및 방법 | |
KR100485023B1 (ko) | SiC 단결정 성장장치 | |
JPH0315550Y2 (enrdf_load_html_response) | ||
JP3521070B2 (ja) | 繊維状結晶製造装置 | |
JP2000169281A (ja) | 結晶体引上げ装置 | |
JP3567662B2 (ja) | 単結晶成長方法及びその装置 | |
JP2533864Y2 (ja) | 単結晶引上装置 | |
JP3700397B2 (ja) | 化合物半導体結晶の製造方法 | |
JPH10167890A (ja) | シリコン単結晶引上げ装置の分割した保温筒 | |
JPS5912632B2 (ja) | タンケツシヨウノヒキアゲソウチ | |
JP2785578B2 (ja) | シリコン単結晶の引上げ装置 | |
JPH0523579Y2 (enrdf_load_html_response) | ||
TWI245820B (en) | Rotational-vibration unidirectional solidification crystal growth system and method | |
JPS60180989A (ja) | 化合物単結晶の製造方法 | |
JPH0511074B2 (enrdf_load_html_response) | ||
JPH0742194B2 (ja) | 単結晶の製造装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |