JPH0437969B2 - - Google Patents
Info
- Publication number
- JPH0437969B2 JPH0437969B2 JP11825182A JP11825182A JPH0437969B2 JP H0437969 B2 JPH0437969 B2 JP H0437969B2 JP 11825182 A JP11825182 A JP 11825182A JP 11825182 A JP11825182 A JP 11825182A JP H0437969 B2 JPH0437969 B2 JP H0437969B2
- Authority
- JP
- Japan
- Prior art keywords
- metal
- metal layer
- mim
- manufacturing
- insulator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002184 metal Substances 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 34
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 238000000059 patterning Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims 1
- 239000012212 insulator Substances 0.000 description 9
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1365—Active matrix addressed cells in which the switching element is a two-electrode device
Landscapes
- Physics & Mathematics (AREA)
- Liquid Crystal (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
【発明の詳細な説明】
２枚の基板により液晶物質を挟持してなる電気
光学装置の少なくとも一方の基板に金属−絶縁体
−金属（以下MIM素子という）の構造より成る
非線形素子を設置した電気光学装置のMIM素子
の製造方法に関する。[Detailed Description of the Invention] An electro-optical device comprising a liquid crystal material sandwiched between two substrates, and a nonlinear element having a metal-insulator-metal (hereinafter referred to as MIM element) structure installed on at least one of the substrates. The present invention relates to a method of manufacturing an MIM element for an optical device.
第１図は、MIM素子の代表的な形状を示し、
第２図は線ａにおける断面図である。１は基板、
２は第１の金属であり、第１の金属２は、Al，
Ta等の金属で表面が均一に酸化でき、絶縁体と
なる金属であればよい。３は第３の金属であり、
Al，Ta，Cr，NiCr等所定の非線形特性が得られ
る金属であればよい。４は透明導電膜であり、
SnO2，ITO等が使用可能である。５は絶縁体で
ある。 Figure 1 shows a typical shape of an MIM element,
FIG. 2 is a sectional view taken along line a. 1 is the board,
2 is a first metal, and the first metal 2 is Al,
Any metal such as Ta that can be uniformly oxidized on the surface and serves as an insulator may be used. 3 is the third metal;
Any metal can be used, such as Al, Ta, Cr, NiCr, etc., which can provide the predetermined nonlinear characteristics. 4 is a transparent conductive film;
SnO 2 , ITO, etc. can be used. 5 is an insulator.
従来のMIM素子の製造方法は、第３図に示す
如く基板１上に第１の金属２を形成し、所定の形
状にパターニングする。次に第４図に示す如く第
１の金属２の表面を酸素ガスを含む高温雰囲気中
あるいは陽極酸化等の方法により均一に絶縁体５
を形成する。次に第５図に示す如く第３の金属３
を形成し、所定の形状にパターニングする。次に
第６図に示す如く透明導電膜４を形成し、所定の
形状にパターニングする。 In the conventional method of manufacturing an MIM element, as shown in FIG. 3, a first metal 2 is formed on a substrate 1 and patterned into a predetermined shape. Next, as shown in FIG. 4, the surface of the first metal 2 is uniformly coated with an insulator 5 in a high temperature atmosphere containing oxygen gas or by a method such as anodic oxidation.
form. Next, as shown in FIG.
is formed and patterned into a predetermined shape. Next, as shown in FIG. 6, a transparent conductive film 4 is formed and patterned into a predetermined shape.
このような製造方法により製造されたMIM素
子の代表的な特性を第７図に示す。縦軸は、
MIM素子に流れる電流Ｉであり、横軸はMIM素
子の印加電圧Ｖである。第７図より明らかなよう
にMIM素子に印加する電圧Ｖの向きにより流れ
る電流値Ｉが異なり、液晶層に直接電流が印加さ
れてしまうという欠点があつた。液晶物質に直流
電流を印加すると、液晶物質が劣化するのは公知
である。また更に、MIM素子を製造するために
はパターニング工程が３回あり、そのために価格
が高くなつてしまうという欠点があつた。また更
に３回のパターニングのために歩留りが悪くなつ
てしまうという欠点があつた。また更に同一ライ
ンに複数のMIM素子を設置した場合となり会う
MIM素子の配線が表面に絶縁体が形成された第
１の金属となるために、電気光学装置に組み立て
た場合、MIM素子間の配線が目立つてしまい、
電気光学装置の見栄えが悪くなつてしまうという
欠点があつた。 FIG. 7 shows typical characteristics of an MIM element manufactured by such a manufacturing method. The vertical axis is
It is the current I flowing through the MIM element, and the horizontal axis is the applied voltage V of the MIM element. As is clear from FIG. 7, the flowing current value I varies depending on the direction of the voltage V applied to the MIM element, and the disadvantage is that the current is directly applied to the liquid crystal layer. It is known that applying a direct current to a liquid crystal material causes it to deteriorate. Furthermore, the patterning process is required three times in order to manufacture the MIM element, which has the disadvantage of increasing the cost. Furthermore, there was a drawback that the yield was poor due to the three-time patterning process. Furthermore, if multiple MIM elements are installed on the same line, they will meet each other.
Since the wiring of the MIM element is made of the first metal with an insulator formed on the surface, the wiring between the MIM elements becomes conspicuous when assembled into an electro-optical device.
The drawback was that the appearance of the electro-optical device deteriorated.
本発明はかかる欠点を除去したもので、その目
的は、２回のパターニング工程でMIM素子を製
造する方法を提供するものである。 The present invention eliminates these drawbacks and aims to provide a method for manufacturing MIM devices using two patterning steps.
以下実施例に基づいて本発明を詳しく説明す
る。 The present invention will be described in detail below based on Examples.
第８図から第１８図は本発明の製造方法を示す
図である。第８図に示す様に、基板６に透明導電
膜７と第１の金属８を所定の膜厚で形成する。次
に第４図に示すように所定の形状にパターニング
し、透明導電膜７および第１の金属８を同じ形状
にエツチングする。 8 to 18 are diagrams showing the manufacturing method of the present invention. As shown in FIG. 8, a transparent conductive film 7 and a first metal 8 are formed on a substrate 6 to a predetermined thickness. Next, as shown in FIG. 4, it is patterned into a predetermined shape, and the transparent conductive film 7 and first metal 8 are etched into the same shape.
第９図はパターニング形状の一例である。第１
０図は第９図の線ｂにおける断面図である。次に
第１１図に示すように、第１の金属と同一材料の
第２の金属１３を所定の厚さに形成する。次に第
１２図に示すように第２の金属１３及び第１の金
属８の表面を所定の厚さだけ酸化し絶縁体９を形
成する。この時斜線部で示す部分は完全に酸化さ
れるように、第２の金属１３の厚さあるいは絶縁
体９の厚さを調整する。次に第１３図に示すよう
に第３の金属１０を所定の厚さに形成する。次に
第１５図に示すように所定の形状に第３の金属１
０をパターニングする。第１４図斜線部は第３の
金属１０のパターン形状の一例である。次に第１
６図に示すようにパターニングした第３の金属１
０をマスクとし、絶縁体９及び第１の金属８を除
去する。すなわち第１４図の斜線部以外の絶縁体
９及び第１の金属８は除去される。 FIG. 9 is an example of a patterning shape. 1st
FIG. 0 is a sectional view taken along line b in FIG. Next, as shown in FIG. 11, a second metal 13 made of the same material as the first metal is formed to a predetermined thickness. Next, as shown in FIG. 12, the surfaces of the second metal 13 and first metal 8 are oxidized to a predetermined thickness to form an insulator 9. At this time, the thickness of the second metal 13 or the thickness of the insulator 9 is adjusted so that the shaded area is completely oxidized. Next, as shown in FIG. 13, a third metal 10 is formed to a predetermined thickness. Next, as shown in FIG.
Pattern 0. The shaded area in FIG. 14 is an example of the pattern shape of the third metal 10. Then the first
6. Third metal 1 patterned as shown in Figure 6
0 as a mask, the insulator 9 and first metal 8 are removed. That is, the insulator 9 and the first metal 8 other than the shaded area in FIG. 14 are removed.
第１７図は第１４図の線Ｃにおける断面図であ
る。以上の様な方法によりMIM素子を形成でき
るという利点がある。また更に、パターニング工
程が２回であるために歩留りがよくなり価格を低
くできるという利点がある。また更に同一ライン
に複数のMIM素子を設置すると、隣り合うMIM
素子の配線が透明導電膜となり、電気光学装置の
見栄えが良くなるという利点がある。また更に第
１８図に示すように同時に１１，１２の部分に
MIM素子が形成でき１２のMIM素子と１１の
MIM素子は逆局性で直列に接続されているため
に、無極性となり液晶層に直流電流が印加される
のを防ぐことができるという利点がある。 FIG. 17 is a sectional view taken along line C in FIG. 14. The method described above has the advantage of being able to form MIM elements. Furthermore, since the patterning process is performed twice, there is an advantage that the yield can be improved and the price can be lowered. Furthermore, if multiple MIM elements are installed on the same line, adjacent MIM elements
There is an advantage that the wiring of the element becomes a transparent conductive film, and the appearance of the electro-optical device improves. Furthermore, as shown in Figure 18, at the same time the parts 11 and 12
12 MIM elements and 11 MIM elements can be formed.
Since MIM elements are connected in series with opposite polarity, they have the advantage of being nonpolar and preventing direct current from being applied to the liquid crystal layer.
本発明はMIM素子を設置した電気光学装置を
安価に歩留りよく製造する方法として特に有効な
ものである。 The present invention is particularly effective as a method for manufacturing an electro-optical device equipped with an MIM element at low cost and with a high yield.
第１図はMIM素子の代表的な形状であり、第
２図は線ａでの断面図である。第３図から第６図
までは従来の製造方法を示す。第７図はMIM素
子の代表的な特性であり、横軸はMIM素子の印
加電圧Ｖであり、縦軸はMIM素子に流れる電流
Ｉである。第８図から第１８図本発明による
MIM素子の製造方法を示し、第１０図から第１
３図及び第１７図は第９図の線ｂにおける断面図
であり、第１５図、第１６図は第１４図の線ｃに
おける断面図である。
１，６……基板、２，８……第１の金属、１３
……第２の金属、３，１０……第３の金属、４，
７……透明導電膜、５，９……絶縁体。
FIG. 1 shows a typical shape of an MIM element, and FIG. 2 is a cross-sectional view taken along line a. 3 to 6 show a conventional manufacturing method. FIG. 7 shows typical characteristics of the MIM element, where the horizontal axis is the voltage V applied to the MIM element, and the vertical axis is the current I flowing through the MIM element. Figures 8 to 18 According to the present invention
The manufacturing method of the MIM element is shown in Figures 10 to 1.
3 and 17 are cross-sectional views taken along line b in FIG. 9, and FIGS. 15 and 16 are cross-sectional views taken along line c in FIG. 14. 1, 6... Substrate, 2, 8... First metal, 13
...Second metal, 3,10...Third metal, 4,
7...Transparent conductive film, 5, 9...Insulator.
Claims (1)
れ、該１対の基板の少なくとも一方の基板に金
属−絶縁体−金属の構造よりなる非線形素子が
形成されてなる電気光学装置の製造方法におい
て、 ｂ 該１対の基板の少なくとも一方の基板上に、
透明導電膜と第１の金属層を所定の厚みに形成
し、該透明導電膜と該第１の金属層を同一形状
の所定の形状にパターニングし、更に該第１の
金属層と同一材料の第２の金属層を基板全面に
形成する工程、 ｃ 次に、少なくとも該第２の金属層を酸化して
絶縁層を形成する工程、 ｄ 次に、第３の金属層を基板全面に形成し、該
第３の金属層を所定の形状にパターニングする
工程、 ｅ パターニングされた該第３の金属層をマスク
にし、該絶縁層及び該第１の金属層を除去する
工程、 からなることを特徴とする電気光学装置の製造方
法。[Scope of Claims] 1a An electric device in which an electro-optical material is sandwiched between a pair of substrates, and a nonlinear element having a metal-insulator-metal structure is formed on at least one of the pair of substrates. In the method for manufacturing an optical device, b. on at least one of the pair of substrates,
A transparent conductive film and a first metal layer are formed to a predetermined thickness, the transparent conductive film and the first metal layer are patterned into the same predetermined shape, and a layer of the same material as the first metal layer is formed. a step of forming a second metal layer over the entire surface of the substrate; c. Next, a step of oxidizing at least the second metal layer to form an insulating layer; d. Next, forming a third metal layer over the entire surface of the substrate. , patterning the third metal layer into a predetermined shape; e. removing the insulating layer and the first metal layer using the patterned third metal layer as a mask. A method for manufacturing an electro-optical device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57118251A JPS599631A (en) | 1982-07-07 | 1982-07-07 | Manufacture of electrooptic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57118251A JPS599631A (en) | 1982-07-07 | 1982-07-07 | Manufacture of electrooptic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS599631A JPS599631A (en) | 1984-01-19 |
| JPH0437969B2 true JPH0437969B2 (en) | 1992-06-23 |
Family
ID=14731978
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57118251A Granted JPS599631A (en) | 1982-07-07 | 1982-07-07 | Manufacture of electrooptic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS599631A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61134070A (en) * | 1984-12-05 | 1986-06-21 | Matsushita Electric Ind Co Ltd | Thin film transistor array |
-
1982
- 1982-07-07 JP JP57118251A patent/JPS599631A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS599631A (en) | 1984-01-19 |
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