JPH0436469B2 - - Google Patents

Info

Publication number
JPH0436469B2
JPH0436469B2 JP57071613A JP7161382A JPH0436469B2 JP H0436469 B2 JPH0436469 B2 JP H0436469B2 JP 57071613 A JP57071613 A JP 57071613A JP 7161382 A JP7161382 A JP 7161382A JP H0436469 B2 JPH0436469 B2 JP H0436469B2
Authority
JP
Japan
Prior art keywords
charge transfer
wells
well
charge
barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57071613A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57197856A (en
Inventor
Pendoruton Joan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Publication of JPS57197856A publication Critical patent/JPS57197856A/ja
Publication of JPH0436469B2 publication Critical patent/JPH0436469B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/152—One-dimensional array CCD image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/335—Channel regions of field-effect devices of charge-coupled devices

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP57071613A 1981-04-30 1982-04-30 Zigzag type charge transfer device Granted JPS57197856A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/258,866 US4446473A (en) 1981-04-30 1981-04-30 Serpentine charge transfer device

Publications (2)

Publication Number Publication Date
JPS57197856A JPS57197856A (en) 1982-12-04
JPH0436469B2 true JPH0436469B2 (OSRAM) 1992-06-16

Family

ID=22982453

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57071613A Granted JPS57197856A (en) 1981-04-30 1982-04-30 Zigzag type charge transfer device

Country Status (5)

Country Link
US (1) US4446473A (OSRAM)
EP (1) EP0065438B1 (OSRAM)
JP (1) JPS57197856A (OSRAM)
CA (1) CA1201204A (OSRAM)
DE (1) DE3279820D1 (OSRAM)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2525836A1 (fr) * 1982-04-23 1983-10-28 Thomson Csf Filtre transversal a transfert de charge
US4857979A (en) * 1988-06-20 1989-08-15 Ford Aerospace & Communications Corporation Platinum silicide imager
JPH03114236A (ja) * 1989-09-28 1991-05-15 Sony Corp 電荷転送装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3858232A (en) * 1970-02-16 1974-12-31 Bell Telephone Labor Inc Information storage devices
JPS5332687A (en) * 1976-09-07 1978-03-28 Sony Corp Charge transfer device
US4103347A (en) * 1976-10-29 1978-07-25 Texas Instruments Incorporated Zig-zag sps ccd memory
JPS5417684A (en) * 1977-07-08 1979-02-09 Fujitsu Ltd Semiconductor pickup unit
DE2842856C3 (de) * 1978-10-02 1981-09-03 Siemens AG, 1000 Berlin und 8000 München Ladungsverschiebespeicher in Seriell-Parallel-Seriell-Organisation mit vollständigem Grundladungsbetrieb
JPS5921189B2 (ja) * 1978-10-30 1984-05-18 松下電子工業株式会社 電荷転送装置
US4371885A (en) * 1979-10-10 1983-02-01 Hughes Aircraft Company Charge coupled device improved meander channel serial register
US4291239A (en) * 1980-02-25 1981-09-22 Rca Corporation Architecture line-transfer CCD imagers

Also Published As

Publication number Publication date
CA1201204A (en) 1986-02-25
EP0065438A3 (en) 1984-11-21
DE3279820D1 (en) 1989-08-17
US4446473A (en) 1984-05-01
EP0065438B1 (en) 1989-07-12
JPS57197856A (en) 1982-12-04
EP0065438A2 (en) 1982-11-24

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