JPS57197856A - Zigzag type charge transfer device - Google Patents

Zigzag type charge transfer device

Info

Publication number
JPS57197856A
JPS57197856A JP57071613A JP7161382A JPS57197856A JP S57197856 A JPS57197856 A JP S57197856A JP 57071613 A JP57071613 A JP 57071613A JP 7161382 A JP7161382 A JP 7161382A JP S57197856 A JPS57197856 A JP S57197856A
Authority
JP
Japan
Prior art keywords
transfer device
charge transfer
type charge
zigzag type
zigzag
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57071613A
Other languages
English (en)
Other versions
JPH0436469B2 (ja
Inventor
Pendoruton Jiyoan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Publication of JPS57197856A publication Critical patent/JPS57197856A/ja
Publication of JPH0436469B2 publication Critical patent/JPH0436469B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14825—Linear CCD imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1062—Channel region of field-effect devices of charge coupled devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP57071613A 1981-04-30 1982-04-30 Zigzag type charge transfer device Granted JPS57197856A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/258,866 US4446473A (en) 1981-04-30 1981-04-30 Serpentine charge transfer device

Publications (2)

Publication Number Publication Date
JPS57197856A true JPS57197856A (en) 1982-12-04
JPH0436469B2 JPH0436469B2 (ja) 1992-06-16

Family

ID=22982453

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57071613A Granted JPS57197856A (en) 1981-04-30 1982-04-30 Zigzag type charge transfer device

Country Status (5)

Country Link
US (1) US4446473A (ja)
EP (1) EP0065438B1 (ja)
JP (1) JPS57197856A (ja)
CA (1) CA1201204A (ja)
DE (1) DE3279820D1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2525836A1 (fr) * 1982-04-23 1983-10-28 Thomson Csf Filtre transversal a transfert de charge
US4857979A (en) * 1988-06-20 1989-08-15 Ford Aerospace & Communications Corporation Platinum silicide imager
JPH03114236A (ja) * 1989-09-28 1991-05-15 Sony Corp 電荷転送装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5332687A (en) * 1976-09-07 1978-03-28 Sony Corp Charge transfer device
JPS5417684A (en) * 1977-07-08 1979-02-09 Fujitsu Ltd Semiconductor pickup unit
JPS5561068A (en) * 1978-10-30 1980-05-08 Matsushita Electronics Corp Charge transfer device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3858232A (en) * 1970-02-16 1974-12-31 Bell Telephone Labor Inc Information storage devices
US4103347A (en) * 1976-10-29 1978-07-25 Texas Instruments Incorporated Zig-zag sps ccd memory
DE2842856C3 (de) * 1978-10-02 1981-09-03 Siemens AG, 1000 Berlin und 8000 München Ladungsverschiebespeicher in Seriell-Parallel-Seriell-Organisation mit vollständigem Grundladungsbetrieb
US4371885A (en) * 1979-10-10 1983-02-01 Hughes Aircraft Company Charge coupled device improved meander channel serial register
US4291239A (en) * 1980-02-25 1981-09-22 Rca Corporation Architecture line-transfer CCD imagers

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5332687A (en) * 1976-09-07 1978-03-28 Sony Corp Charge transfer device
JPS5417684A (en) * 1977-07-08 1979-02-09 Fujitsu Ltd Semiconductor pickup unit
JPS5561068A (en) * 1978-10-30 1980-05-08 Matsushita Electronics Corp Charge transfer device

Also Published As

Publication number Publication date
JPH0436469B2 (ja) 1992-06-16
EP0065438A3 (en) 1984-11-21
US4446473A (en) 1984-05-01
EP0065438B1 (en) 1989-07-12
DE3279820D1 (en) 1989-08-17
EP0065438A2 (en) 1982-11-24
CA1201204A (en) 1986-02-25

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