JPH0436447B2 - - Google Patents

Info

Publication number
JPH0436447B2
JPH0436447B2 JP58196065A JP19606583A JPH0436447B2 JP H0436447 B2 JPH0436447 B2 JP H0436447B2 JP 58196065 A JP58196065 A JP 58196065A JP 19606583 A JP19606583 A JP 19606583A JP H0436447 B2 JPH0436447 B2 JP H0436447B2
Authority
JP
Japan
Prior art keywords
sample
point
sample surface
scan
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58196065A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6088424A (ja
Inventor
Hidekazu Okabayashi
Shuichi Saito
Kohei Higuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP19606583A priority Critical patent/JPS6088424A/ja
Publication of JPS6088424A publication Critical patent/JPS6088424A/ja
Publication of JPH0436447B2 publication Critical patent/JPH0436447B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP19606583A 1983-10-21 1983-10-21 ビ−ムアニ−ル法 Granted JPS6088424A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19606583A JPS6088424A (ja) 1983-10-21 1983-10-21 ビ−ムアニ−ル法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19606583A JPS6088424A (ja) 1983-10-21 1983-10-21 ビ−ムアニ−ル法

Publications (2)

Publication Number Publication Date
JPS6088424A JPS6088424A (ja) 1985-05-18
JPH0436447B2 true JPH0436447B2 (enrdf_load_stackoverflow) 1992-06-16

Family

ID=16351610

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19606583A Granted JPS6088424A (ja) 1983-10-21 1983-10-21 ビ−ムアニ−ル法

Country Status (1)

Country Link
JP (1) JPS6088424A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2526378B2 (ja) * 1987-08-21 1996-08-21 工業技術院長 半導体単結晶層の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58103140A (ja) * 1981-12-16 1983-06-20 Fujitsu Ltd レ−ザアニ−ル方法

Also Published As

Publication number Publication date
JPS6088424A (ja) 1985-05-18

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