JPH04343513A - Surface acoustic wave element - Google Patents

Surface acoustic wave element

Info

Publication number
JPH04343513A
JPH04343513A JP14390191A JP14390191A JPH04343513A JP H04343513 A JPH04343513 A JP H04343513A JP 14390191 A JP14390191 A JP 14390191A JP 14390191 A JP14390191 A JP 14390191A JP H04343513 A JPH04343513 A JP H04343513A
Authority
JP
Japan
Prior art keywords
acoustic wave
surface acoustic
opening
insulating
support plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14390191A
Other languages
Japanese (ja)
Inventor
Shoji Takishima
滝島 昭二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Faurecia Clarion Electronics Co Ltd
Original Assignee
Clarion Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clarion Co Ltd filed Critical Clarion Co Ltd
Priority to JP14390191A priority Critical patent/JPH04343513A/en
Publication of JPH04343513A publication Critical patent/JPH04343513A/en
Pending legal-status Critical Current

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Landscapes

  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

PURPOSE:To obtain a surface acoustic wave device capable of loading a surface acoustic wave element with high density without losing its characteristics. CONSTITUTION:An opening part 10a having a shape almost similar to the surface acoustic wave element 11 is formed on a film-like insulating supporting plate body 10 and plural leads 12 formed on the upper surface of the supporting plate body 10 are protruded to the opening part 10a. The bump electrode 13 of the element 11 is abutted upon the protruded lead parts from their lower parts, insulating plate bodies 14 for covering the opening part 10a are laminated on the lead face side of the plate body 10, the internal leads are connected to the bump electrode 13 from hole parts 14a perforated through the plate body 14 by a thermal press-containing method or the like, and then the hole parts 14a and the lower face part side of the element 11 are sealed with resins 15a, 15b. Thereby a space part can be formed on the surface of the element 11 and the element 11 can be packaged by means of rein sealing.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は、弾性表面波素子上に空
間部を設けて実装できる弾性表面波装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface acoustic wave device that can be mounted by providing a space above a surface acoustic wave element.

【0002】0002

【従来の技術】図4および図5に、TAB(Tape 
Automated Bonding)による半導体チ
ップの樹脂封止構造を示す。即ち、開口部1aを有する
絶縁支持フィルム1上に複数の導電箔リード2を設け、
開口部1aに突出するリード先端部と半導体チップ3の
電極に形成されたパンプ4を周知のボンディングにて結
合し、そのあと熱硬化型樹脂5にてチップ3と結合部を
含む開口部1aを埋め、硬化処理して封止する構造であ
る。このTAB技術によれば、ICの高密封実装化が実
現できる。
[Prior Art] FIGS. 4 and 5 show TAB (Tape)
2 shows a resin-sealed structure of a semiconductor chip using automated bonding. That is, a plurality of conductive foil leads 2 are provided on an insulating support film 1 having an opening 1a,
The lead tips protruding into the opening 1a and the pumps 4 formed on the electrodes of the semiconductor chip 3 are bonded together by well-known bonding, and then the chip 3 and the opening 1a including the bonding portion are bonded with a thermosetting resin 5. It is a structure that is filled, hardened, and sealed. According to this TAB technology, highly sealed packaging of ICs can be realized.

【0003】0003

【発明が解決しようとする課題】上記TAB技術は、通
常のICに代表される半導体チップの実装を目的として
いるため、弾性表面波素子のように、その機能上、表面
に樹脂等が接着することにより、特性を損なうものには
不適当である。
[Problems to be Solved by the Invention] The above TAB technology is aimed at mounting semiconductor chips such as ordinary ICs, and therefore, due to its function, resin etc. are adhered to the surface like surface acoustic wave elements. Therefore, it is unsuitable for those that impair the characteristics.

【0004】0004

【発明の目的】本発明は、TAB技術を適用し、弾性表
面波素子をその機能を損なうことなく実装し、かつ樹脂
封止可能な弾性表面波装置を提供することを目的とする
OBJECTS OF THE INVENTION An object of the present invention is to provide a surface acoustic wave device that applies TAB technology, can mount a surface acoustic wave element without impairing its function, and can be sealed with resin.

【0005】[0005]

【課題を解決するための手段】本願の第1の発明は、弾
性表面波素子と、前記弾性表面波素子に対応する開口部
を有し、上面に前記素子上の電極と接するように前記開
口部に突出した複数のリードが形成され、前記素子上面
の電極が突出したリード下方より当接するように前記素
子を前記開口部に支持する絶縁支持板体と、前記突出し
たリード部分に対向する孔部を有し、前記素子が支持さ
れた側と反対側の開口部上を覆い、前記絶縁支持板体上
面側に支持された絶縁板体と、前記素子下面を覆うとと
もに前記孔部をふさぐ樹脂とから成ることを要旨として
いる。
[Means for Solving the Problems] A first invention of the present application includes a surface acoustic wave element and an opening corresponding to the surface acoustic wave element, the opening being in contact with an electrode on the element on an upper surface. an insulating support plate supporting the element in the opening so that a plurality of leads are formed on the upper surface of the element and the electrodes on the upper surface of the element abut from below the protruding leads; and a hole facing the protruding lead parts. an insulating plate that covers the opening on the side opposite to the side on which the element is supported and is supported on the upper surface side of the insulating support plate; and a resin that covers the lower surface of the element and closes the hole. The gist is that it consists of the following.

【0006】本願の第2の発明は、弾性表面波素子と、
前記弾性表面波素子より大なる開口部を有し、上面に素
子上の電極と接するように前記開口部に突出した複数の
リードが形成され、前記素子上面の電極が突出したリー
ド下方より当接するように前記素子を前記開口部内に支
持する絶縁支持板体と、前記絶縁支持板体上のリードが
形成している側に載置され、前記開口部を覆う第1の絶
縁板体と、前記第1の絶縁板体とは反対側の前記絶縁支
持板体上に載置され、前記素子を覆う第2の絶縁板体と
から成ることを要旨としている。
[0006] A second invention of the present application includes a surface acoustic wave element;
The surface acoustic wave element has an opening larger than the surface acoustic wave element, and a plurality of leads are formed on the upper surface of the element and protrude from the opening so as to contact electrodes on the element, and the electrodes on the upper surface of the element abut from below the protruding leads. an insulating support plate supporting the element in the opening; a first insulating plate placed on the side where the leads are formed on the insulating support plate and covering the opening; A second insulating plate is placed on the insulating support plate on the opposite side of the first insulating plate and covers the element.

【0007】[0007]

【作用】上記構成によれば、弾性表面波素子側の電極と
当接するリードの上に、更に絶縁板体が設けられている
ので、素子表面に空間が形成され、しかも樹脂封止が可
能となる。
[Function] According to the above structure, an insulating plate is further provided on the lead that contacts the electrode on the surface acoustic wave element side, so a space is formed on the element surface and resin sealing is possible. Become.

【0008】[0008]

【実施例】図1(a),(b)および図2に、本発明の
一実施例を示す。図1(a)は中間段階の断面構造を、
図1(b)は完成後の断面構造を示し、図2は図1(a
)の平面構造を示している。
Embodiment FIGS. 1(a), 1(b) and 2 show an embodiment of the present invention. Figure 1(a) shows the cross-sectional structure at an intermediate stage.
Figure 1(b) shows the cross-sectional structure after completion, and Figure 2 shows Figure 1(a).
) shows the planar structure of

【0009】同図において、10はフィルム状絶縁支持
板体、10aは弾性表面波素子11とほぼ同じ形状に開
口された開口部、12は前記支持板体10に設けられた
導体箔リードであり、このリードは素子のバンプ電極1
3に当接するように開口部10aに導出している。ここ
までは、通常のTAB技術に用いられている構造である
In the figure, 10 is a film-like insulating support plate, 10a is an opening having almost the same shape as the surface acoustic wave element 11, and 12 is a conductive foil lead provided on the support plate 10. , this lead is the bump electrode 1 of the element.
3 and is led out to the opening 10a so as to come into contact with the opening 10a. The structure up to this point is the structure used in normal TAB technology.

【0010】本発明では、図1(a)に示すように、更
にリード12の上からフィルム状絶縁板体14が積層さ
れる。この絶縁板体14には、リード12の先端、つま
りバンプ電極13と当接される部分に孔部14aが設け
られている。この孔部14aは、次の工程での内部リー
ド・ボンディングが可能な孔径を有している。内部リー
ドと素子のバンプ電極は熱圧着等の方法により接合され
る。しかるのちに、図1(b)に示すように、通常の熱
硬化型樹脂により、前記絶縁板体14の孔部14aおよ
び素子11の下部面を封止し、封止樹脂15a,15b
を形成する。素子下部面の樹脂は、素子側面と絶縁支持
板体10の開口部周囲間を覆うことが可能である。この
封止工程を経た後に、外部リードを切断し、実装工程を
終了する。このように構成することにより、素子上面に
空間部を設けることが可能となる。
In the present invention, a film-like insulating plate 14 is further laminated on the lead 12, as shown in FIG. 1(a). This insulating plate 14 is provided with a hole 14 a at the tip of the lead 12 , that is, at a portion that comes into contact with the bump electrode 13 . This hole 14a has a hole diameter that allows internal lead bonding in the next step. The internal leads and the bump electrodes of the element are joined by a method such as thermocompression bonding. Thereafter, as shown in FIG. 1(b), the hole 14a of the insulating plate 14 and the lower surface of the element 11 are sealed with a normal thermosetting resin, and the sealing resin 15a, 15b is sealed.
form. The resin on the lower surface of the element can cover between the side surface of the element and the periphery of the opening of the insulating support plate 10. After this sealing process, the external leads are cut and the mounting process is completed. With this configuration, it is possible to provide a space on the top surface of the element.

【0011】図3(a),(b)に、本発明の他の実施
例を示す。本実施例では、図3(a)に示すように、絶
縁支持板体10の開口部10aは素子より大きく形成さ
れ、この絶縁支持板体10に、リードのある側と、その
反対側の両面から前記開口部10aを覆うフィルム状絶
縁板体16,17が、加熱圧着もしくは接着剤にて接着
されている。
FIGS. 3(a) and 3(b) show another embodiment of the present invention. In this embodiment, as shown in FIG. 3(a), the opening 10a of the insulating support plate 10 is formed larger than the element, and the insulating support plate 10 has both sides, the side with the leads and the opposite side. Film-like insulating plates 16 and 17 that cover the opening 10a are bonded by heat-pressing or adhesive.

【0012】上記構成によって封止は完成するが、耐環
境性が不充分な場合には、図3(b)に示すように、更
に熱硬化型樹脂にて封止し、封止樹脂18,19を形成
する。素子11は絶縁板体16,17で封止されている
ため、樹脂は素子上面に至らず、素子の特性を損なうこ
とはない。
Sealing is completed with the above configuration, but if the environmental resistance is insufficient, sealing is performed with a thermosetting resin as shown in FIG. 3(b), and the sealing resin 18, form 19. Since the element 11 is sealed with the insulating plates 16 and 17, the resin does not reach the upper surface of the element and does not impair the characteristics of the element.

【0013】[0013]

【発明の効果】本発明によれば、弾性表面波素子をTA
B技術にて実装する場合に、素子表面部に空間を設ける
ことができるから、素子の特性を損なうことなく、高密
度パッケージを実現できる。
Effects of the Invention According to the present invention, the surface acoustic wave element can be
When mounting using B technology, a space can be provided on the surface of the element, so a high-density package can be realized without impairing the characteristics of the element.

【図面の簡単な説明】[Brief explanation of drawings]

【図1】(a)は本発明の一実施例を示す弾性表面波装
置の中間構造断面図である。 (b)は完成後の構造断面図である。
FIG. 1(a) is a sectional view of an intermediate structure of a surface acoustic wave device showing an embodiment of the present invention. (b) is a sectional view of the structure after completion.

【図2】図1(a)の平面図である。FIG. 2 is a plan view of FIG. 1(a).

【図3】(a),(b)はそれぞれ本発明の他の実施例
を示す断面図である。
FIGS. 3(a) and 3(b) are cross-sectional views showing other embodiments of the present invention, respectively.

【図4】従来の弾性表面波装置の断面図である。FIG. 4 is a sectional view of a conventional surface acoustic wave device.

【図5】リードを設けた絶縁支持板体部分の平面図であ
る。
FIG. 5 is a plan view of an insulating support plate portion provided with leads.

【符号の説明】[Explanation of symbols]

10  絶縁支持板体 10a  開口部 11  弾性表面波素子 12  リード 13  バンプ電極 14  絶縁板体 14a  孔部 15a,15b  封止樹脂 16,17  絶縁板体 18,19  封止樹脂 10 Insulating support plate 10a Opening 11 Surface acoustic wave device 12 Lead 13 Bump electrode 14 Insulating plate 14a Hole 15a, 15b Sealing resin 16, 17 Insulating plate 18, 19 Sealing resin

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】  弾性表面波素子と、前記弾性表面波素
子に対応する開口部を有し、上面に前記素子上の電極と
接するように前記開口部に突出した複数のリードが形成
され、前記素子上面の電極が突出したリード下方より当
接するように前記素子を前記開口部に支持する絶縁支持
板体と、前記突出したリード部分に対向する孔部を有し
、前記素子が支持された側と反対側の開口部上を覆い、
前記絶縁支持板体上面側に支持された絶縁板体と、前記
素子下面を覆うとともに前記孔部をふさぐ樹脂とから成
ることを特徴とする弾性表面波素子。
1. A surface acoustic wave element having a surface acoustic wave element and an opening corresponding to the surface acoustic wave element, a plurality of leads protruding from the opening so as to be in contact with electrodes on the element on the upper surface, an insulating support plate supporting the element in the opening so that the electrode on the upper surface of the element comes into contact with the protruding lead from below, and a hole facing the protruding lead portion, the side on which the element is supported. and cover the opening on the opposite side.
A surface acoustic wave element comprising an insulating plate supported on the upper surface side of the insulating support plate, and a resin covering the lower surface of the element and closing the hole.
【請求項2】  弾性表面波素子と、前記弾性表面波素
子より大なる開口部を有し、上面に素子上の電極と接す
るように前記開口部に突出した複数のリードが形成され
、前記素子上面の電極が突出したリード下方より当接す
るように前記素子を前記開口部内に支持する絶縁支持板
体と、前記絶縁支持板体上のリードが形成している側に
載置され、前記開口部を覆う第1の絶縁板体と、前記第
1の絶縁板体とは反対側の前記絶縁支持板体上に載置さ
れ、前記素子を覆う第2の絶縁板体とから成ることを特
徴とする弾性表面波素子。
2. A surface acoustic wave element having an opening larger than the surface acoustic wave element, a plurality of leads protruding from the opening so as to be in contact with electrodes on the element on an upper surface thereof, and the element an insulating support plate supporting the element in the opening such that the electrode on the upper surface contacts the protruding lead from below; and an insulating support plate placed on the side where the lead is formed on the insulating support plate, and the opening and a second insulating plate placed on the insulating support plate on the opposite side of the first insulating plate and covering the element. surface acoustic wave device.
JP14390191A 1991-05-20 1991-05-20 Surface acoustic wave element Pending JPH04343513A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14390191A JPH04343513A (en) 1991-05-20 1991-05-20 Surface acoustic wave element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14390191A JPH04343513A (en) 1991-05-20 1991-05-20 Surface acoustic wave element

Publications (1)

Publication Number Publication Date
JPH04343513A true JPH04343513A (en) 1992-11-30

Family

ID=15349703

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14390191A Pending JPH04343513A (en) 1991-05-20 1991-05-20 Surface acoustic wave element

Country Status (1)

Country Link
JP (1) JPH04343513A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6310421B2 (en) 1998-10-05 2001-10-30 Mitsubishi Denki Kabushiki Kaisha Surface acoustic wave device and method for fabricating the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6310421B2 (en) 1998-10-05 2001-10-30 Mitsubishi Denki Kabushiki Kaisha Surface acoustic wave device and method for fabricating the same

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