JPH04342150A - Inspection of semiconductor device - Google Patents

Abstract

PURPOSE:To improve measurement precision by providing a film which shortcircuits a plurality of electrodes to one main surface of a supporting substrate whereto a soft electrode is provided and by measuring characteristics with a probe in contact with the shortcircuiting film and each electrode of the other main surface. CONSTITUTION:A scanner 14 selects both up and down probes 2, 12 which are positioned in a shortest distance between art upper electrode 4 and a shortcircuiting film 5 and is energized to carry out conduction test and measurement of resistance, impedance, insulation resistance, etc., at a characteristics measurement part 15. The upper probe 2 is in contact with each upper electrode 4; therefore, even if the lower probe 12 is shortcircuited by the shortcircuiting film 5, mixed contact is not caused between both upper and lower electrodes 4, 16 which are in corresponding relation. Accordingly, enough contact pressure of upper and lower probes 2, 12 can be ensured. Thereby, high precision inspection can be carried out without damaging the electrode 16.

Description

[Detailed description of the invention]

0001

[Field of Industrial Application] The present invention relates to a method for testing semiconductor devices, and more particularly, the present invention relates to a method for testing semiconductor devices, and in particular, a method for testing semiconductor devices, in which a probe is brought into contact with a plurality of corresponding electrodes that are electrically connected to both main surfaces of a support substrate on which a semiconductor element is mounted. This invention relates to an inspection method for measuring electrical characteristics.

0002

2. Description of the Related Art During the manufacturing process of a semiconductor device, a probe is brought into contact with a plurality of electrodes on a semiconductor element or a support substrate on which the semiconductor element is mounted, and tests such as continuity and resistance measurements are performed.

[0003] This inspection method is introduced in Japanese Patent Laid-Open No. 64-50434.

0004

As semiconductor devices become more highly integrated, a plurality of electrodes on a support substrate on which semiconductor devices are mounted tend to become smaller. As an example, the diameter is approximately 0.25m
There is one with m electrodes. It is difficult to bring the probe into contact with such a minute object. In addition, some electrode materials are soft, and when a probe is pressed against a small, soft metal, the electrode easily deforms, and even if measurements can be made, the supporting substrate becomes unusable. There is something. Therefore, if the probe is brought into contact with the probe manually, sufficient contact pressure cannot be ensured, and high measurement accuracy cannot be obtained.

SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide an inspection method capable of measuring characteristics with high precision without damaging the electrodes on a support substrate.

[0006]

[Means for Solving the Problems] The testing method of the present invention that achieves the above object is characterized by providing a film that short-circuits a plurality of electrodes on one main surface of a support substrate on which soft electrodes are provided, and The purpose is to measure the characteristics by bringing probes into contact with each electrode on the membrane and the other main surface.

[0007]

[Operation] By bringing the probe into contact with the shorting film on one main surface, it becomes unnecessary to bring the probe into contact with the electrode made of a soft material, thereby preventing the electrode from being damaged. In addition, even if the probe strongly contacts the short-circuit membrane and the probe damages the short-circuit membrane, the short-circuit membrane will be removed, so there will be no problem. can be ensured and high measurement accuracy can be obtained.

[0008]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The inspection method of the present invention will be explained below based on an embodiment shown in the drawings.

FIG. 1 is an exploded perspective view of essential parts of an inspection apparatus for carrying out the inspection method of the present invention.

In FIG. 1, reference numeral 1 denotes an upper probe block, and this probe block 1 is supported and fixed to an upper fixing plate (not shown). Also, probe block 1
A plurality of probes 2 are vertically installed on the lower surface. A lead wire 20 is connected to each probe 2 individually.

Reference numeral 3 denotes a support substrate on which a semiconductor element (not shown) is surface-mounted. 1 within the division indicated by the dotted line in Figure 1.
Semiconductor elements are fixed one by one. The fixation is performed via an electrode 4 provided on the upper surface. An example of the material of the electrode 4 is tungsten.

As shown in FIG. 2, the support substrate has a plurality of soft electrodes 16 provided on the lower surface corresponding to each electrode 4 on the upper surface.
There is. Further, the electrode 16 is a BLM for a solder bump, and for example, gold is used externally. Both electrodes 4 and 16 are connected by a wiring film 30 buried in the support substrate 3. Note that the resistor R in the wiring film 30 is a terminating resistor provided by applying thin film technology.

A shorting film 5 is provided on the lower surface of the support substrate 3. This shorts out all electrodes 16. The shorting film 5 may be formed by vapor deposition or plating, but may also be formed by contacting gold, silver, or copper foil.

Reference numeral 6 in FIG. 1 is a fixture for fixing the support substrate 3. As shown in FIG. A substantially rectangular holding bank 7 is provided in the center of the jig 6 to accommodate the support substrate 3. A screw 8 and a pressing member 9 are provided at one corner of the retaining bank 7, and the supporting substrate 3 is pressed and fixed to the retaining bank 7 by rotating the screw 8.

A plurality of probe passage holes 10a are provided in the floor surface 10 inside the holding bank. Although the fixing jig 6 is not shown, it is removably fixed to the lower probe block 11. A lower probe 12 is erected on the lower probe block 11 at a position corresponding to the probe passage hole 10a of the fixing jig 6. The lower probe block 11 has X, Y, θ, Z
It is fixed on a table group 13 that is movable in the direction.

After fixing the support substrate 3 to the fixing jig 6 and bringing the shorting film 5 and the lower probe 12 into contact, the table group 13 is
is moved by a controller (not shown), and the support substrate 3 is
The upper electrode 4 is brought into contact with the upper probe 2. FIG. 2 shows a situation in which both the upper and lower probes 2 and 12 are brought into contact with the upper electrode 4 and the short-circuiting film 5 to measure the characteristics.

Reference numeral 14 shown in FIG. 2 indicates both the upper and lower probes 2, 1.
2 and lead wires 20 and 21, both upper and lower probes 2 are located at the shortest distance between the upper electrode 4 and the shorting membrane 5.
.

The lower probe 12 is brought into contact with the shorting film 5 of the support substrate 3 and does not touch the electrode 16 directly. Therefore, the lower probe 12 can be brought into strong contact with the shorting film 5. The upper electrode 4 is made of a hard material, and the upper probe 2
can be firmly pressed against the electrode 4.

Since the upper probe 2 contacts each of the upper electrodes 4, even if the lower probe 12 is short-circuited by the short-circuiting film 5, no contact occurs between the corresponding upper and lower electrodes 4 and 16. Therefore, the contact pressure of the upper and lower probes 2 and 12 can be maintained to be charged, and the inspection can be performed with high precision without damaging the electrodes 16.

By measuring the characteristics of the shorting film 5 in advance, its internal resistance can be removed by correction.

In the above embodiment, the upper and lower probe blocks 1
, 11 are provided with a plurality of probes 2, 12, but each probe may have a single probe.

The material used as the BLM is provided by vapor deposition as the shorting film 5, the probe 12 is brought into contact with the part other than the part that will become the BLM, and etching is performed so that the electrode 16 is formed after inspection. Part of the processing step and characteristic measurement step in step 3 can be overlapped.

[0023]

[Effects of the Invention] As explained above, according to the present invention,
Characteristics can be measured with high precision without damaging the electrodes on the support substrate.

[Brief explanation of the drawing]

FIG. 1 is an exploded perspective view of essential parts of an inspection device used in an embodiment of the inspection method of the present invention.

FIG. 2 is a diagram showing a situation in which measurement is performed by the inspection device shown in FIG. 1.

[Explanation of symbols]

2... Upper probe, 3... Support substrate, 4... Upper electrode, 5... Shorting film, 12... Lower probe, 15... Characteristic measuring section, 16... Lower electrode.

Claims (2)

[Claims] Claim 1: One main surface is provided with a plurality of electrodes, the other main surface is provided with electrodes corresponding to each of the electrodes, and the corresponding electrodes on both main surfaces are electrically connected, Inspection of a semiconductor device in which a probe is brought into contact with each corresponding electrode on both main surfaces of a support substrate on which a semiconductor element is mounted so as to be connected to each electrode on the surface, and the characteristics between each corresponding electrode are measured. The method is characterized in that a film is provided on the one main surface to short-circuit the plurality of electrodes, and a probe is brought into contact with the short-circuiting film and each electrode on the other main surface to measure the characteristics between the corresponding electrodes. A method for testing semiconductor devices. 2. The inspection method of claim 1, wherein the electrodes on one main surface are made of a soft material, and the electrodes on the other main surface are made of a hard material. Inspection method.