JPH03286543A - Probe for test of semiconductor integrated circuit device - Google Patents

Abstract

PURPOSE:To enable characteristic test to be performed regardless of a narrow electrode which is approximately 50mum by embedding a plurality of probes consisting of a conductive material with a specific diameter length into an insulated support substrate. CONSTITUTION:A diameter of a probe 1 consisting of a conductive material such as a metal (tungsten, palladium, etc.) is 50mum or less and is buried at an insulated support substrate 2 made of, for example, resin. These probes 1 are connected to measuring device by a lead 3. A thickness (d) of the insulated support substrate 2 should normally be approximately 4-5mm since it needs to withstand the pressure which is applied to a probe for test for allowing the probe and an electrode to contact fully. Also, assuming that this insulated support substrate 2 is a transparent resin, it is convenient since it is possible to inspect an alignment between the probe and the electrode visually from above when performing characteristic test. On principles, if the diameter of the probe is 50mum or less, measurement can be made without mutual contact to perform characteristic test of a semiconductor integrated circuit device where an interval between the electrodes is 50mum without any contact. However, it is more desirable that the diameter is 20-30mum.

Description

Detailed Description of the Invention [Industrial Application Field] The present invention provides a method for testing the characteristics of semiconductor integrated circuit devices by using a plurality of conductive probes fixed to an insulating support substrate as a test object. The present invention relates to a test probe that contacts corresponding electrodes of a semiconductor integrated circuit and conductively connects these electrodes to a measuring device.

E. Prior Art j In order to test the characteristics of semiconductor integrated circuit devices, as shown in FIGS. Base Fi12
A test probe is used which is fixed with resin 14 and connected to a measuring device (not shown) with a lead 13. The probe 11 is made of metal such as tungsten or palladium, and has a tip portion 11A of 20 to 30 μm that contacts the t8i41A of the semiconductor integrated circuit device 41 under test.
and a support portion 11B of approximately 200 μm that supports this.

During a characteristic test, as shown in FIG.
After A is brought into contact, the semiconductor integrated circuit device 41 is further pressed, applying pressure between the probe and the electrode to obtain good contact.

[Problem to be solved by the invention]

In the test probe described above, the probe touches the electrode at 20
~30. It consists of the tip of the um and a support part of about 200 μm that supports it. However, in recent years, the degree of integration of semiconductor integrated circuit devices has progressed further, and the electrode spacing has increased to 50 μm.
Products of about m are commercially available.

In a semiconductor integrated circuit device having such narrowly spaced electrodes, the supporting portion of the probe of the test probe comes into contact with the electrodes, making characteristic testing impossible.

An object of the present invention is to solve the above-mentioned problems and provide a test probe capable of performing characteristic tests even with electrodes as narrow as about 50 μm.

[Means to solve the problem]

In order to solve the above-mentioned problems, in the present invention, a plurality of IT probes fixed to an insulating support substrate are brought into contact with corresponding electrodes of a semiconductor integrated circuit device as a test object, In a test probe for testing the characteristics of a semiconductor integrated circuit device by electrically connecting these electrodes and a measuring device, a plurality of probes made of a conductive material with a diameter of 50 μm or less are attached to an insulating support substrate. It becomes embedded in.

[For production]

In the probe for testing a semiconductor integrated circuit device of the present invention, a plurality of probes made of a conductive material and having a diameter of 50 μm or less are directly embedded in an insulating support substrate made of resin, for example. The supporting substrate itself constitutes the supporting part of the probe, and the probe is located 50 μm from this supporting substrate.
It will stand out at the following intervals: Therefore, even if the distance between the electrodes of a semiconductor integrated circuit device is 50 μm, measurements for testing the characteristics of this device can be made without any portion other than the probe coming into contact with the electrodes. It is more desirable if the diameter of the probe made of a conductive material is 20 to 30 μm, which is less than 50 μm, since this will allow for more space between the support portions of the probe.

〔Example〕

FIG. 1 shows the structure of a test probe for a semiconductor integrated circuit device according to an embodiment of the present invention, (a) is a perspective view, (b)
is a sectional view taken along line A-A in (a). 1 is a probe made of a conductive material, such as metal such as tungsten or palladium, and its diameter is 50 μm or less, for example, 20 to 3
At 0tIm, for example, the insulating support substrate 2 made of resin
embedded in. These probes 1 are connected to a measuring device (not shown) via a beam 3.

A test probe in which such a very thin probe 1 is embedded in an insulating support base vi2 can be manufactured by the method shown in FIG. FIG. 2 is a process diagram showing the manufacturing method. In step (1), the probe l with the temporary support part IA is positioned to match the electrode 4A of the semiconductor integrated circuit device 4 of the test object. The temporary support part IA is fixed to the lower surface of the temporary support plate 5 by adhesive or the like. Next, in (2), the probe 1 is removed from the electrode of the semiconductor integrated circuit device 4, and the lower surface of the temporary support plate 5 is molded with resin so that the probe 1 completely covers it. 2 indicates the zero order of the resin. In (3), the resin is dissolved with a solution until the tip of the probe 1 is exposed.The broken line 2A indicates the removed resin.Next, in (4), the probe 1 is removed from the top surface of the temporary support plate 5. Polishing is performed until the temporary support part IA is removed. The broken line 7 indicates the removed part. In this case, a predetermined thickness d remains in the resin. The resin with the remaining thickness d is an insulating material. 0th order (5) which becomes the supporting group Fi2
The glue 3 for the probe 1 that appears on the polished surface is formed by metal vapor deposition.

The thickness d of the insulating support substrate 2 in Fig. 1 (same as the thickness d of the remaining resin in Fig. 2 (4)) was set for this test to ensure good contact between the probe and the electrode. It is necessary to withstand the pressure applied to the probe, and the thickness is usually about 4 to 5 mm. Furthermore, if the insulating support substrate 2 is made of a transparent resin, it is convenient to be able to visually check the positioning of the probe and the electrode from above during a characteristic test. Note that for characteristic testing of semiconductor integrated circuit devices with an electrode spacing of 50 pm, the diameter of the probe should, in principle, be 50 pm.
If the thickness is 0 μm or less, measurement can be performed without contacting each other, but it is more desirable if the thickness is 20 to 30 μm, with some allowance.

〔Effect of the invention〕

According to the present invention, in a test probe for a semiconductor integrated circuit device, a plurality of probes made of a conductive material with a diameter of 50 μm or less are not supported by a supporting portion with a diameter of about 200 μm as in the conventional case, but can be directly insulated supported. Since the electrodes are held by the substrate, the electrode spacing is 50 μm, which was difficult to conduct measurement tests until now.
It has become possible to test the characteristics of semiconductor circuit devices with a high degree of integration on the order of m or less. The degree of integration of semiconductor circuit devices has increased rapidly in recent years, and the test probe of the present invention has great value.

[Brief explanation of drawings]

FIG. 1 shows the structure of a test probe for a semiconductor integrated circuit device according to an embodiment of the present invention.
), FIG. 2 is a process diagram showing the manufacturing method of the test probe for a semiconductor integrated circuit device of the present invention shown in FIG. 1, and FIG. The perspective view and FIG. 4 are side views showing the state of connection between the test probe of the conventional semiconductor integrated circuit device of FIG. 3 and the semiconductor integrated circuit device. 1: Probe, 2: Insulating support substrate, 4: Semiconductor integrated circuit device, 4A: Pole (semiconductor integrated circuit device) Fig. 4

Claims (1)

[Claims] (1) A plurality of conductive probes fixed to an insulating support substrate are brought into contact with the corresponding electrodes of the semiconductor integrated circuit device under test, and these electrodes and the measuring device are connected electrically. A test probe for testing the characteristics of a semiconductor integrated circuit device connected to a semiconductor device, characterized in that a plurality of probes made of a conductive material and having a diameter of 50 μm or less are embedded in an insulating support substrate. Probe for testing integrated circuit devices.