JP2901781B2 - Inspection method for semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of inspecting a semiconductor device, and more particularly, to a method of contacting a probe with a plurality of corresponding electrodes provided to be electrically connected to both main surfaces of a support substrate on which a semiconductor element is mounted. And an inspection method for measuring electrical characteristics.

[0002]

2. Description of the Related Art During a manufacturing process of a semiconductor device, a probe is brought into contact with a plurality of electrodes on a semiconductor element or a supporting substrate on which the semiconductor element is mounted, and inspections such as a conduction state and a resistance measurement are performed.

[0003] Japanese Patent Application Laid-Open No. Sho 50-50434 discloses this inspection method.

[0004]

With the increase in the degree of integration of a semiconductor device, a plurality of electrodes on a support substrate on which the semiconductor device is mounted tend to be miniaturized. As an example, about 0.25mm in diameter
Are provided. It is difficult to bring the probe into contact with such a minute object. In addition, some of the materials used as electrode materials are soft.When a probe is pressed against a small and soft metal, the electrodes are easily deformed, and even if measurement can be performed, the support substrate becomes unusable after that. There is something. Therefore, if manual adjustment is applied to the probe contact, sufficient contact pressure cannot be ensured, and high measurement accuracy cannot be obtained.

Therefore, an object of the present invention is to provide an inspection method capable of measuring characteristics with high accuracy without damaging an electrode on a supporting substrate.

[0006]

A feature of the inspection method of the present invention that achieves the above object is that a film for short-circuiting a plurality of electrodes is provided on one main surface of a support substrate on which a soft electrode is provided, and the short-circuit is provided. It is to measure characteristics by bringing a probe into contact with the film and each electrode on the other main surface.

[0007]

By contacting the probe with the short-circuit film on one principal surface, it is not necessary to contact the probe with an electrode made of a soft material, so that the electrode is not damaged. Further, even if the probe is strongly contacted with the short-circuit film and the short-circuit film is scratched by the probe, the short-circuit film is removed, so that there is no problem. Can be secured and high measurement accuracy can be obtained.

[0008]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The inspection method of the present invention will be described below with reference to an embodiment shown in the drawings.

FIG. 1 is an exploded perspective view of a main part of an inspection apparatus for performing the inspection method of the present invention.

In FIG. 1, reference numeral 1 denotes an upper probe block, and the probe block 1 is supported and fixed to an upper fixing plate (not shown). Probe block 1
Has a plurality of probes 2 suspended from the lower surface. Each probe 2 is individually connected to a lead wire 20.

Reference numeral 3 denotes a support substrate on which a semiconductor element (not shown) is surface-mounted. 1 is included in the division indicated by the dotted line in FIG.
The semiconductor elements are fixed individually. The fixing is performed via an electrode 4 provided on the upper surface. An example of the material of the electrode 4 is tungsten.

As shown in FIG. 2, the support substrate has a plurality of soft electrodes 16 provided on the lower surface corresponding to the respective electrodes 4 on the upper surface.
There is. The electrode 16 is a BLM for a solder bump, and gold is used externally as an example. The two electrodes 4 and 16 are connected by a wiring film 30 buried in the support substrate 3. The resistance R in the wiring film 30 is a terminating resistance provided by applying the thin film technology.

A short-circuit film 5 is provided on the lower surface of the support substrate 3. This shorts all of the electrodes 16. The short-circuit film 5 may be formed by vapor deposition or plating, but may be formed by contacting gold, silver, or copper foil.

Reference numeral 6 in FIG. 1 denotes a jig for fixing the support substrate 3. At the center of the jig 6, a substantially rectangular holding bank 7 for storing the support substrate 3 is provided. A screw 8 and a pressing member 9 are provided at one corner of the holding bank 7, and the screw 8 is rotated to press and fix the support substrate 3 to the holding bank 7.

A plurality of probe passage holes 10a are provided in the floor 10 inside the retaining bank. Although not shown, the fixing jig 6 is detachably fixed to the lower probe block 11. In the lower probe block 11, a lower probe 12 is erected at a position corresponding to the probe passage hole 10a of the fixing jig 6. Lower probe block 11 is X, Y, θ, Z
It is fixed on a table group 13 that can move in the direction.

After fixing the support substrate 3 to the fixing jig 6 and bringing the short-circuit film 5 and the lower probe 12 into contact with each other, the table group 13
Is moved by a controller (not shown), and the supporting substrate 3 is moved.
The upper electrode 4 is brought into contact with the upper probe 2. FIG. 2 shows a situation in which the upper and lower probes 2 and 12 are brought into contact with the upper electrode 4 and the short-circuit film 5 to measure the characteristics.

In FIG. 2, reference numeral 14 denotes upper and lower probes 2, 1
The upper and lower probes 2 and 12 located at the shortest distance between the upper electrode 4 and the short-circuit film 5 are selected by a scanner connected to the lead wires 20 and 21 and energized. Measure impedance, insulation resistance, etc.

The lower probe 12 is in contact with the short-circuit film 5 of the support substrate 3 and does not directly touch the electrode 16. Therefore, the lower probe 12 can be strongly contacted with the short-circuit film 5. The upper electrode 4 is made of a hard material so that the upper probe 2 can be firmly pressed against the electrode 4.

Since the upper probe 2 is in contact with each of the upper electrodes 4, even if the lower probe 12 is short-circuited by the short-circuit film 5, no contact occurs between the upper and lower electrodes 4, 16 in a corresponding relationship. Therefore, the contact pressure of the upper and lower probes 2 and 12 can be ensured to be charged, and the inspection can be performed with high accuracy without damaging the electrode 16.

By measuring the characteristics of the short-circuit film 5 in advance, its internal resistance can be removed by correction.

In the above embodiment, a plurality of probes 2 and 12 are provided in the upper and lower probe blocks 1 and 11, however, a single probe may be used.

If the material to be used for the BLM is provided as a short-circuit film 5 by vapor deposition, the probe 12 is brought into contact with a portion other than the portion to be the BLM, and etching is performed so that the electrode 16 is formed after the inspection. Part 3 of the processing step and the characteristic measurement step can be overlapped.

[0023]

As described above, according to the present invention,
The characteristics can be measured with high accuracy without damaging the electrodes on the support substrate.

[Brief description of the drawings]

FIG. 1 is an exploded perspective view of a main part of an inspection apparatus used in an embodiment of the inspection method of the present invention.

FIG. 2 is a diagram showing a situation where measurement is performed by the inspection device shown in FIG. 1;

[Explanation of symbols]

2 upper probe, 3 support substrate, 4 upper electrode, 5 short circuit film, 12 lower probe, 15 characteristic measuring section, 16 lower electrode.

──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Hironobu Toshima 5-2-2 Koyodai, Ryugasaki-shi, Ibaraki Pref. Inside the R & D Laboratory (72) Inventor Kiyoshi Numata 1- 1 Horiyamashita, Hadano-shi, Kanagawa Hitachi, Ltd. In the factory Kanagawa factory (72) Inventor Tsuneo Okamoto 1 Horiyamashita, Hadano-shi, Kanagawa In the Hitachi factory Kanagawa factory (56) References JP-A-60-27139 (JP, A) JP-A-2-6764 ( JP, A) (58) Fields investigated (Int. Cl. ⁶ , DB name) H01L 21/66 G01R 31/26

Claims (2)

(57) [Claims] A first surface provided with a plurality of electrodes; another main surface provided with electrodes corresponding to the respective electrodes, and corresponding electrodes on both main surfaces being electrically connected to each other; Inspection of a semiconductor device in which a probe is brought into contact with each corresponding electrode on both main surfaces of a support substrate on which a semiconductor element is mounted so as to be connected to each electrode on the surface, and a characteristic between each corresponding electrode is measured. In the method, a film for short-circuiting the plurality of electrodes is provided on the one main surface, and a probe is brought into contact with the short-circuit film and each electrode on the other main surface to measure characteristics between the corresponding electrodes. Inspection method for a semiconductor device. 2. The inspection method according to claim 1, wherein the electrode on one main surface is made of a soft material, and the electrode on the other main surface is made of a hard material. Inspection methods.