JPH04320321A - Method for measuring thickness of silylated resist layer - Google Patents
Method for measuring thickness of silylated resist layerInfo
- Publication number
- JPH04320321A JPH04320321A JP8872291A JP8872291A JPH04320321A JP H04320321 A JPH04320321 A JP H04320321A JP 8872291 A JP8872291 A JP 8872291A JP 8872291 A JP8872291 A JP 8872291A JP H04320321 A JPH04320321 A JP H04320321A
- Authority
- JP
- Japan
- Prior art keywords
- silylated
- layer
- thickness
- resist layer
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 14
- 238000010521 absorption reaction Methods 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000011088 calibration curve Methods 0.000 claims abstract description 9
- 238000011161 development Methods 0.000 abstract description 4
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 3
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- 229910018540 Si C Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000006884 silylation reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
Landscapes
- Length Measuring Devices By Optical Means (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】この発明は、シリル化レジスト層
の厚さ測定方法に関する。さらに詳しくは、レジストパ
ターン形成工程の露光、シリル化及びドライエッチング
の条件設定に必要なシリル化レジスト層の厚さを測定す
る方法であり、ことに超ＬＳＩの製造に用いられる。FIELD OF THE INVENTION This invention relates to a method for measuring the thickness of silylated resist layers. More specifically, it is a method for measuring the thickness of a silylated resist layer necessary for setting conditions for exposure, silylation, and dry etching in a resist pattern forming process, and is particularly used in the manufacture of VLSIs.
【０００２】0002
【従来の技術】従来、上層のシリル化層と下層の非シリ
ル化層からなるレジスト膜で形成されたレジストパター
ンは、シリル化層の厚さが厚くなるにしたがって、線幅
が大きくなるということが知られている。そこでレジス
トパターンの線幅を所望の大きさに制御するために、シ
リル化層の厚さ測定が行われている。[Prior Art] Conventionally, in a resist pattern formed with a resist film consisting of an upper silylated layer and a lower non-silylated layer, the line width increases as the thickness of the silylated layer increases. It has been known. Therefore, in order to control the line width of the resist pattern to a desired size, the thickness of the silylated layer is measured.
【０００３】従来のシリル化レジスト膜の厚さ測定方法
は、基板上にレジスト膜を塗布し、所定パターンに露光
し、ＨＭＤＳ（ヘキサメチルジシラザン）雰囲気中で基
板を加熱することによってレジスト膜の露光領域上層を
シリル化し、レジスト膜表面に直交する方向に基板を切
断し、その端面をドライエッチング法（０２を用いたプ
ラズマエッチング法）によって処理することによってレ
ジスト膜の非シリル化レジスト層を選択的にエッチング
してシリル化レジスト層を明確化し、この後に電子顕微
鏡で拡大してシリル化レジスト層の厚さを測定して行わ
れている。The conventional method for measuring the thickness of a silylated resist film is to coat the resist film on a substrate, expose it to light in a predetermined pattern, and heat the substrate in an HMDS (hexamethyldisilazane) atmosphere. The non-silylated resist layer of the resist film is selected by silylating the upper layer of the exposed area, cutting the substrate in the direction perpendicular to the resist film surface, and treating the end face with a dry etching method (plasma etching method using 02). This is done by etching the silylated resist layer to clarify it, and then magnifying it with an electron microscope to measure the thickness of the silylated resist layer.
【０００４】0004
【発明が解決しようとする課題】上記従来のシリル化レ
ジスト層の厚さ測定方法は、基板を切断して行うため工
程途中でのシリル化層の厚み測定には向いていないし、
かつ手間がかかるという問題がある。[Problems to be Solved by the Invention] The conventional method for measuring the thickness of a silylated resist layer is performed by cutting the substrate, so it is not suitable for measuring the thickness of a silylated layer in the middle of the process.
There is also the problem that it is time consuming.
【０００５】この発明は上記問題を解決するためになさ
れたものであって、現像する前にシリル化レジスト層の
厚さを簡便に測定することができるシリル化レジスト層
の厚さ測定方法を提供しようとするものである。The present invention was made in order to solve the above problem, and provides a method for measuring the thickness of a silylated resist layer that can easily measure the thickness of a silylated resist layer before development. This is what I am trying to do.
【０００６】[0006]
【課題を解決するための手段】この発明によれば、基板
上のレジスト層を所定パターンのマスクを用いて露光し
、次いでシリル化することによって露光領域に形成され
たシリル化層を有するレジスト層に、赤外線を照射し、
８４７ｃｍ−１と１５９４ｃｍ−１の吸収強度比を求め
、予め作られた吸収強度比とシリル化層の厚みとの検量
線を用いて、シリル化層の厚みを求めることを特徴とす
るシリル化レジスト層の厚さ測定方法が提供される。[Means for Solving the Problems] According to the present invention, a resist layer having a silylated layer formed in the exposed region by exposing a resist layer on a substrate to light using a mask with a predetermined pattern and then silylating the resist layer. irradiates with infrared rays,
A silylated resist characterized in that the absorption intensity ratio of 847 cm-1 and 1594 cm-1 is determined, and the thickness of the silylated layer is determined using a previously prepared calibration curve of the absorption intensity ratio and the thickness of the silylated layer. A layer thickness measurement method is provided.
【０００７】この発明においては、露光領域に形成され
たシリル化層を有するレジスト層に、赤外線を照射し、
８４７ｃｍ−１と１５９４ｃｍ−１の吸収強度比を求め
る。In the present invention, a resist layer having a silylated layer formed in an exposed area is irradiated with infrared rays,
The absorption intensity ratio of 847 cm-1 and 1594 cm-1 is determined.
【０００８】８４７ｃｍ−１は、シリル化層を構成する
Ｃ−Ｓｉ結合によって吸収される赤外線であり、その波
数を示す。１５９４ｃｍ−１は、シリル化層及び非シリ
ル化層を構成するＣ−Ｃ結合によって吸収される赤外線
であり、その波数を示す８４７ｃｍ−１と１５９４ｃｍ
−１の吸収強度比は、シリル化層及び非シリル化層に吸
収される赤外線の強さに対するシリル化層に吸収される
赤外線の強さの比であるシリル化層は、基板上のレジス
ト層を所定パターンのマスクを用いて露光し、次いでシ
リル化することによって通常レジスト層の露光領域の下
層に非シリル化層を残し上層に形成されたシリル化は、
例えば所定パターンの露光領域を有する基板をシリル化
剤の雰囲気に配置し、所定温度に加熱し露光領域のレジ
ストとシリル化剤を反応させて行うことができる。[0008] 847 cm-1 is infrared rays absorbed by the C--Si bonds constituting the silylated layer, and indicates its wave number. 1594 cm-1 is infrared rays absorbed by the C-C bonds that constitute the silylated layer and the non-silylated layer, and its wave numbers are 847 cm-1 and 1594 cm.
The absorption intensity ratio of -1 is the ratio of the intensity of infrared rays absorbed by the silylated layer to the intensity of infrared rays absorbed by the silylated layer and the non-silylated layer.The silylated layer is the resist layer on the substrate. By exposing the resist layer to light using a mask with a predetermined pattern and then silylating, the silylated layer formed on the upper layer usually leaves a non-silylated layer below the exposed area of the resist layer.
For example, this can be carried out by placing a substrate having a predetermined pattern of exposed regions in an atmosphere of a silylating agent, heating it to a predetermined temperature, and causing the resist in the exposed regions to react with the silylating agent.
【０００９】この発明においては、予め作られた吸収強
度比とシリル化層の厚みとの検量線を用いて、シリル化
層の厚みを求める。In the present invention, the thickness of the silylated layer is determined using a calibration curve between the absorption intensity ratio and the thickness of the silylated layer prepared in advance.
【００１０】上記検量線は、形成するレジストパターン
のパターン毎に予め作るのがよく、例えば次のように作
ることができる。Ｎｏ．１〜Ｎｏ．５の５つの基板上に
、それぞれ膜厚１５００ｎｍのレジスト膜を塗布し、所
定パターンの光をそれぞれ異なった強さで露光する。ヘ
キサメチルジシラザン（ＨＭＤＳ）雰囲気中でこれらの
基板を１６０℃に加熱することによりレジスト層の露光
領域をシリル化してシリル化層を形成する。これらの基
板のレジスト層（シリル化レジスト層と非シリル化レジ
スト層からなる）にフーリエ変換赤外吸収分光法によっ
て８４７ｃｍ−１（Ｓｉ−Ｃボンドの吸収）と１５９４
ｃｍ−１（Ｃ−Ｃボンドの吸収）の吸収強度比を求めた
ところＮｏ．１〜Ｎｏ．５の基板に対してそれぞれ１．
７，３．２，４．６，６．０及び７．０である。The above-mentioned calibration curve is preferably created in advance for each resist pattern to be formed, and can be created, for example, as follows. No. 1~No. A resist film having a film thickness of 1500 nm is applied onto each of the five substrates of No. 5, and exposed to a predetermined pattern of light at different intensities. By heating these substrates to 160° C. in a hexamethyldisilazane (HMDS) atmosphere, the exposed areas of the resist layer are silylated to form a silylated layer. The resist layer (consisting of a silylated resist layer and a non-silylated resist layer) of these substrates was measured by Fourier transform infrared absorption spectroscopy to have a wavelength of 847 cm (absorption of Si-C bond) and a wavelength of 1594 cm.
When the absorption intensity ratio of cm-1 (absorption of C-C bond) was determined, No. 1~No. 1 for each of the 5 substrates.
7, 3.2, 4.6, 6.0 and 7.0.
【００１１】次にこれらの基板をレジスト層表面に直交
する方向に切断し、それらの端面をＯ２を用いたＲＩＥ
法によって処理することによってレジスト層の非シリル
化層を選択的にエッチングしてシリル化層を明確化する
。この後に電子顕微鏡で端面を拡大してシリル化層の厚
さを測定するとＮｏ．１〜Ｎｏ．５の基板に対してそれ
ぞれ１２０ｎｍ，３２０ｎｍ，５２０ｎｍ，７２０ｎｍ
及び８１０ｎｍである。得られる吸収強度比（８４７ｃ
ｍ−１／１５９４ｃｍ−１）とシリル化層の厚みの５つ
の関係から、図１に示すような検量線を求める。Next, these substrates were cut in a direction perpendicular to the surface of the resist layer, and their end faces were subjected to RIE using O2.
The non-silylated layer of the resist layer is selectively etched to define the silylated layer by processing according to a method. After this, when the end face was enlarged with an electron microscope and the thickness of the silylated layer was measured, No. 1~No. 120 nm, 320 nm, 520 nm, 720 nm for 5 substrates, respectively.
and 810 nm. Obtained absorption intensity ratio (847c
A calibration curve as shown in FIG. 1 is determined from five relationships between the silylated layer thickness (m-1/1594 cm-1) and the thickness of the silylated layer.
【００１２】0012
【作用】赤外線の８４７ｃｍ−１と１５９４ｃｍ−１の
吸収強度比が、シリル化層を構成するＳｉ−Ｃ結合の吸
収とシリル化層及び非シリル化層を構成するＣ−Ｃ結合
の吸収との吸収強度比を表す。[Function] The absorption intensity ratio of infrared rays at 847 cm-1 and 1594 cm-1 is the difference between the absorption of Si-C bonds constituting the silylated layer and the absorption of C-C bonds constituting the silylated layer and the non-silylated layer. Represents the absorption intensity ratio.
【００１３】[0013]
【実施例】Ｎｏ．６〜Ｎｏ．７それぞれの基板上に、上
記と同様にレジスト膜を塗布し、検量線（図１）を求め
たときと同じ所定パターンの光をそれぞれ所定の強さで
露光し、ヘキサメチルジシラザン雰囲気中でこの基板を
１６０℃に加熱することによりレジスト膜の露光領域を
シリル化してシリル化レジスト層を形成する。[Example] No. 6~No. 7. Coat a resist film on each substrate in the same manner as above, and expose it to the same predetermined pattern of light at a predetermined intensity as used to obtain the calibration curve (Figure 1) in a hexamethyldisilazane atmosphere. By heating this substrate to 160° C., the exposed region of the resist film is silylated to form a silylated resist layer.
【００１４】これらの基板のレジスト膜に対しフーリエ
変換赤外吸収分光法によって８４７ｃｍ−１と１５９４
ｃｍ−１の赤外線吸収強度比を求めたところ、Ｎｏ．６
及びＮｏ．７の基板に対しそれぞれ３．９及び６．５で
あった。この数値を用い図１の検量線からこのシリル化
レジスト層の厚さを求めるとそれぞれ４１０ｎｍ及び８
２０ｎｍと測定される。The resist films of these substrates were subjected to Fourier transform infrared absorption spectroscopy to detect wavelengths of 847 cm-1 and 1594 cm.
When the infrared absorption intensity ratio of cm-1 was determined, No. 6
and no. 7 substrates were 3.9 and 6.5, respectively. Using these values and calculating the thickness of this silylated resist layer from the calibration curve in Figure 1, the thicknesses of the silylated resist layer are 410 nm and 8 nm, respectively.
It is measured to be 20 nm.
【００１５】[0015]
【発明の効果】この発明によれば、現像する前にシリル
化層の厚さを測定することができるシリル化レジスト層
の厚さ測定方法を提供することができる。この方法を用
いることによって工程途中でのシリル化層の厚み測定が
簡便に行うことができ、所望の線幅のレジストパターン
を形成することのできる露光条件、シリル化条件及び現
像条件を適確に効率よく設定してレジストパターンを形
成することができる。According to the present invention, it is possible to provide a method for measuring the thickness of a silylated resist layer, which can measure the thickness of a silylated resist layer before development. By using this method, the thickness of the silylated layer can be easily measured during the process, and the exposure conditions, silylation conditions, and development conditions can be appropriately determined to form a resist pattern with the desired line width. A resist pattern can be formed by setting efficiently.
【図１】この発明で用いた赤外線の吸収強度比からシリ
ル化レジスト層の厚さを求める検量線の図である。FIG. 1 is a diagram of a calibration curve for determining the thickness of a silylated resist layer from the infrared absorption intensity ratio used in the present invention.
Claims (1)
マスクを用いて露光し、次いでシリル化することによっ
て露光領域に形成されたシリル化層を有するレジスト層
に、赤外線を照射し、８４７ｃｍ−１と１５９４ｃｍ−
１の吸収強度比を求め、予め作られた吸収強度比とシリ
ル化層の厚みとの検量線を用いて、シリル化層の厚みを
求めることを特徴とするシリル化レジスト層の厚さ測定
方法。1. A resist layer on a substrate is exposed to light using a mask with a predetermined pattern, and then silylated. The resist layer having a silylated layer formed in the exposed area is irradiated with infrared rays, and 1594cm-
A method for measuring the thickness of a silylated resist layer, characterized in that the absorption intensity ratio of 1 is determined, and the thickness of the silylated layer is determined using a pre-prepared calibration curve between the absorption intensity ratio and the thickness of the silylated layer. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8872291A JP2612976B2 (en) | 1991-04-19 | 1991-04-19 | Method for measuring thickness of silylated resist layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8872291A JP2612976B2 (en) | 1991-04-19 | 1991-04-19 | Method for measuring thickness of silylated resist layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04320321A true JPH04320321A (en) | 1992-11-11 |
| JP2612976B2 JP2612976B2 (en) | 1997-05-21 |
Family
ID=13950798
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8872291A Expired - Fee Related JP2612976B2 (en) | 1991-04-19 | 1991-04-19 | Method for measuring thickness of silylated resist layer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2612976B2 (en) |
-
1991
- 1991-04-19 JP JP8872291A patent/JP2612976B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2612976B2 (en) | 1997-05-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |