JPH04318942A - Wire bonding method - Google Patents

Wire bonding method

Info

Publication number
JPH04318942A
JPH04318942A JP3085637A JP8563791A JPH04318942A JP H04318942 A JPH04318942 A JP H04318942A JP 3085637 A JP3085637 A JP 3085637A JP 8563791 A JP8563791 A JP 8563791A JP H04318942 A JPH04318942 A JP H04318942A
Authority
JP
Japan
Prior art keywords
bonding
capillary
inner lead
wire
coated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3085637A
Other languages
Japanese (ja)
Inventor
Takumi Matsukura
松倉　巧
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP3085637A priority Critical patent/JPH04318942A/en
Publication of JPH04318942A publication Critical patent/JPH04318942A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/786—Means for supplying the connector to be connected in the bonding apparatus
    • H01L2224/78621—Holding means, e.g. wire clampers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To join a metallic wire and an inner lead completely by efficiently removing a coating material immediately before bonding when bonding is conducted by using a coated wire, in which the periphery of the metallic wire is coated with an insualtor. CONSTITUTION:When second bonding is conducted to an inner lead 6, a capillary 1 is lowered to a position B separate from a specified bonding position A, a coated wire and the inner lead 6 are brought into contact, a coating material is removed by performing scrubbing operation, and the capillary 1 is moved to a specified bonding position A, thus completing bonding.

Description

【発明の詳細な説明】[Detailed description of the invention]

【０００１】0001

【産業上の利用分野】本発明は半導体装置の製造工程に
おいて半導体素子の電極パッドとリードフレームのイン
ナーリードとを被覆ワイヤで接続するワイヤボンディグ
方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding method for connecting electrode pads of a semiconductor element and inner leads of a lead frame using coated wires in the manufacturing process of semiconductor devices.

【０００２】0002

【従来の技術】従来、半導体素子の電極パッドとインナ
ーリードとを金属ワイヤで接続するワイヤボンディング
は次のように行なわれていた。すなわち、図５及び図６
の工程図（ａ）〜（ｄ）に示すように、まず図（ａ）に
おいてキャピラリー１から突出させた金属ワイヤ２の先
端に、電気スパーク等によりボール３を形成させた後、
キャピラリー１を下降させ、図（ｂ）のようにボール３
を半導体素子４上の電極パッド５に押しつけ、第１ボン
ディングを行なう。次に、キャピラリー１を上昇させて
、インナーリード６の所定の位置へ移動させる。その後
、図（ｃ）のように再びキャピラリー１を下降させて金
属ワイヤ２をインナーリード６に押圧し、第２ボンディ
ングを行なう。次に図（ｄ）のようにクランプ７を閉じ
て金属ワイヤ２とキャピラリー１を同時に上昇させ、金
属ワイヤ２を切断し、金属ワイヤ２の先端に再びボール
３を作って次の第１ボンディングに備える。2. Description of the Related Art Conventionally, wire bonding for connecting electrode pads and inner leads of a semiconductor element with metal wires has been carried out as follows. That is, FIGS. 5 and 6
As shown in the process diagrams (a) to (d), first, a ball 3 is formed at the tip of the metal wire 2 protruding from the capillary 1 in Figure (a) by an electric spark, and then
Lower the capillary 1 and release the ball 3 as shown in figure (b).
is pressed against the electrode pad 5 on the semiconductor element 4 to perform first bonding. Next, the capillary 1 is raised and moved to a predetermined position of the inner lead 6. Thereafter, as shown in FIG. 3C, the capillary 1 is lowered again to press the metal wire 2 against the inner lead 6 to perform second bonding. Next, as shown in Figure (d), close the clamp 7, raise the metal wire 2 and the capillary 1 at the same time, cut the metal wire 2, make the ball 3 again at the tip of the metal wire 2, and use it for the next first bonding. Be prepared.

【０００３】0003

【発明が解決しようとする課題】しかしながら従来のこ
のボンディング方法では、導電材の外周を絶縁体で被覆
した被覆ワイヤでボンディングを行なう場合、第２ボン
ディング時に熱圧着のみでインナーリードめっき部に圧
着しようとしても、溶融した被覆材が妨害して完全な接
合が困難であった。このため、被覆材を溶融する為の熱
風ノズル等を付設したボンディング装置も提案されてい
るが、熱風ノズルをキャピラリーとともに移動させる必
要がある為に、ボンディングヘッドの慣性質量が大きく
なり、ボンディングスピードが著しく低下する。あるい
は所望しない部分の被覆まで除去されてしまうといった
問題点があった。[Problems to be Solved by the Invention] However, in this conventional bonding method, when bonding is performed using a coated wire in which the outer periphery of a conductive material is coated with an insulator, it is difficult to press the inner lead plating part with only thermocompression bonding during the second bonding. However, the molten coating material interfered with the process, making it difficult to achieve complete bonding. For this reason, a bonding device equipped with a hot air nozzle for melting the coating material has been proposed, but since the hot air nozzle needs to be moved together with the capillary, the inertial mass of the bonding head becomes large and the bonding speed slows down. Significantly decreased. Alternatively, there is a problem that the coating may be removed from undesired areas.

【０００４】0004

【課題を解決するための手段】本発明は、インナーリー
ド部に第２ボンディングする際、所定のボンディング位
置から離れた位置にキャピラリーを下降させ、被覆ワイ
ヤとインナーリード部とを接触させた後、スクラブ動作
を行なうことにより被覆材を除去し、その後キャピラリ
ーを所定のボンディング位置に移動させた後に、荷重お
よび超音波を印加し第２ボンディングを施すワイヤボン
ディング方法である。[Means for Solving the Problems] In the present invention, when performing second bonding to the inner lead part, the capillary is lowered to a position away from a predetermined bonding position, and after the coated wire and the inner lead part are brought into contact with each other, This is a wire bonding method in which the covering material is removed by performing a scrubbing operation, the capillary is then moved to a predetermined bonding position, and then a load and ultrasonic waves are applied to perform second bonding.

【０００５】[0005]

【実施例】次に本発明について図面を参照して詳細に説
明する。図１〜図３は本発明の一実施例の工程図（ａ）
〜（ｇ）を示し、図４はそのボンディング部の部分拡大
図である。図１（ａ）に示されるように、キャピラリー
１から突出させた被覆ワイヤ８の先端に電気スパーク等
によりボール３を形成する。このとき、被覆ワイヤ８先
端の被覆材は除去される。次に同図（ｂ）に示すように
、キャピラリー１を下降させ、ボール３を２００℃〜２
５０℃に加熱された半導体素子４上の電極パッド５に荷
重３０〜５０ｇで押しつけ、超音波を印加して第１ボン
ディングを行なう。その後同図（ｃ），（ｄ）に示すよ
うにキャピラリー１を上昇させてインナーリード６の所
定のボンディング位置Ａの手前１００〜２００μｍの位
置Ｂへ移動させ、再びキャピラリー１を下降させる。 このとき図４に示すように、キャピラリー１とインナー
リード６とのクリアランスＬは、被覆ワイヤ８の芯材で
ある金属ワイヤ２の直径程度にする。この状態でキャピ
ラリー１にボンディングヘッド下のＸＹステージ（図示
しない）により、数回のスクラブ動作を行ない、金属ワ
イヤ２の表面に被覆された被覆材９を除去する。次に同
図（ｅ）のようにクランプ７を閉じて被覆ワイヤ８とキ
ャピラリー１を同時に上昇させ、同図（ｆ）のように所
定のボンディング位置Ａへ移動させた後、同図（ｇ）の
ようにインナーリード６に第２ボンディングを施こす。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be explained in detail with reference to the drawings. Figures 1 to 3 are process diagrams (a) of an embodiment of the present invention.
-(g), and FIG. 4 is a partially enlarged view of the bonding portion. As shown in FIG. 1(a), a ball 3 is formed at the tip of a covered wire 8 projected from a capillary 1 by an electric spark or the like. At this time, the covering material at the tip of the covered wire 8 is removed. Next, as shown in the same figure (b), the capillary 1 is lowered and the ball 3 is heated to 200°C
First bonding is performed by pressing the electrode pad 5 on the semiconductor element 4 heated to 50° C. with a load of 30 to 50 g and applying ultrasonic waves. Thereafter, as shown in FIGS. 3(c) and (d), the capillary 1 is raised and moved to a position B 100 to 200 μm before the predetermined bonding position A of the inner lead 6, and then the capillary 1 is lowered again. At this time, as shown in FIG. 4, the clearance L between the capillary 1 and the inner lead 6 is approximately the diameter of the metal wire 2 that is the core material of the coated wire 8. In this state, the capillary 1 is scrubbed several times using an XY stage (not shown) under the bonding head to remove the covering material 9 covering the surface of the metal wire 2. Next, as shown in the figure (e), the clamp 7 is closed and the covered wire 8 and the capillary 1 are raised simultaneously, and after moving to the predetermined bonding position A as shown in the figure (f), the same figure (g) Perform the second bonding on the inner lead 6 as shown in FIG.

【０００６】次に、他の実施例について説明する。前記
の実施例は、被覆材９を除去する為にＸＹステージによ
って数回のスクラブ振動を印加したが、被覆材９を除去
する為には超音波のような高周波を印加してもよい。こ
の場合、印加する超音波は、インナーリード部に対する
ボンディング時に加えられる超音波よりも小さいパワー
とする必要がある。この実施例では、振動の振幅が小さ
くできる為、インナーリード部のボンディングスペース
が小さい場合にも適用できるという効果がある。Next, another embodiment will be explained. In the embodiment described above, several scrub vibrations were applied using the XY stage to remove the coating material 9, but high frequency waves such as ultrasonic waves may be applied to remove the coating material 9. In this case, the applied ultrasonic wave needs to have a smaller power than the ultrasonic wave applied during bonding to the inner lead portion. In this embodiment, since the amplitude of vibration can be made small, there is an advantage that it can be applied even when the bonding space of the inner lead portion is small.

【０００７】[0007]

【発明の効果】以上説明したように本発明は、インナー
リード部にワイヤボンディングする際、所定のボンディ
ング位置から離れた位置にキャピラリーを下降させて、
ワイヤとインナーリード部を接触させた後スクラブ動作
を行ない、被覆材を除去した後、所定のボンディング位
置に移動して第２ボンディングを行なうため、溶融した
被覆材により接合が妨害されることもなく、また、熱風
ノズル等の付設も必要ない為、生産性を向上させること
ができる。Effects of the Invention As explained above, when wire bonding to the inner lead part, the present invention lowers the capillary to a position away from a predetermined bonding position.
After bringing the wire into contact with the inner lead part, a scrubbing operation is performed to remove the coating material, and then the wire is moved to a predetermined bonding position to perform the second bonding, so the bonding is not interfered with by the melted coating material. Furthermore, since there is no need to install a hot air nozzle or the like, productivity can be improved.

【図面の簡単な説明】[Brief explanation of drawings]

【図１】本発明の一実施例を説明する図で、同図（ａ）
〜（ｃ）はそれぞれ工程図である。FIG. 1 is a diagram illustrating an embodiment of the present invention, and FIG.
~(c) are process diagrams, respectively.

【図２】本発明の一実施例を説明する図で、同図（ｄ）
〜（ｆ）はそれぞれ工程図である。FIG. 2 is a diagram illustrating an embodiment of the present invention, and FIG.
~(f) are process diagrams, respectively.

【図３】本発明の一実施例を説明する図で、同図（ｇ）
は工程図である。FIG. 3 is a diagram illustrating an embodiment of the present invention, and FIG.
is a process diagram.

【図４】本発明の一実施例を説明する部分拡大図である
。FIG. 4 is a partially enlarged view illustrating an embodiment of the present invention.

【図５】従来のボンディング方法を説明する図で、同図
（ａ），（ｂ）はそれぞれ工程図である。FIG. 5 is a diagram illustrating a conventional bonding method, and FIGS. 5(a) and 5(b) are process diagrams, respectively.

【図６】従来のボンディング方法を説明する図で、同図
（ｃ），（ｄ）はそれぞれ工程図である。FIG. 6 is a diagram illustrating a conventional bonding method, and FIGS. 6(c) and 6(d) are process diagrams, respectively.

【符号の説明】[Explanation of symbols]

１　　　　キャピラリー ２　　　　金属ワイヤ ３　　　　ボール ４　　　　半導体素子 ５　　　　電極パッド ６　　　　インナーリード ７　　　　クランプ ８　　　　被覆ワイヤ ９　　　　被覆材 1 Capillary 2 Metal wire 3 Ball 4 Semiconductor device 5 Electrode pad 6 Inner lead 7 Clamp 8 Coated wire 9. Covering material

Claims (1)

【特許請求の範囲】[Claims] 【請求項１】　　半導体素子上の電極パッドとリードフ
レームのインナーリード部とを外周部を絶縁体で被覆し
た被覆ワイヤを用いて接続するワイヤボンディング方法
において、前記電極パッドに第１ボンディングを施し、
その後インナーリード部の所定のボンディング位置から
離れた位置にキャピラリーを下降させて被覆ワイヤとイ
ンナーリード部を接触させ、次いでスクラブ動作を行な
って被覆材を除去し、次いで所定のボンディング位置に
キャピラリーを移動させて第２ボンディングを施すこと
を特徴とするワイヤボンディング方法。1. A wire bonding method for connecting an electrode pad on a semiconductor element and an inner lead portion of a lead frame using a coated wire whose outer periphery is coated with an insulator, the method comprising: performing first bonding on the electrode pad;
After that, the capillary is lowered to a position away from the predetermined bonding position on the inner lead part to bring the coated wire into contact with the inner lead part, then a scrubbing operation is performed to remove the coating material, and then the capillary is moved to the predetermined bonding position. A wire bonding method characterized by performing second bonding.
JP3085637A 1991-04-18 1991-04-18 Wire bonding method Pending JPH04318942A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3085637A JPH04318942A (en) 1991-04-18 1991-04-18 Wire bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3085637A JPH04318942A (en) 1991-04-18 1991-04-18 Wire bonding method

Publications (1)

Publication Number Publication Date
JPH04318942A true JPH04318942A (en) 1992-11-10

Family

ID=13864348

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3085637A Pending JPH04318942A (en) 1991-04-18 1991-04-18 Wire bonding method

Country Status (1)

Country Link
JP (1) JPH04318942A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007504648A (en) * 2003-08-29 2007-03-01 フリースケール セミコンダクター インコーポレイテッド Capillary used for wire bonding and wire bonding of insulated wires
CN102931106A (en) * 2011-08-09 2013-02-13 株式会社东芝 Making method of lead wire bonding device and semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007504648A (en) * 2003-08-29 2007-03-01 フリースケール セミコンダクター インコーポレイテッド Capillary used for wire bonding and wire bonding of insulated wires
CN102931106A (en) * 2011-08-09 2013-02-13 株式会社东芝 Making method of lead wire bonding device and semiconductor device
JP2013038257A (en) * 2011-08-09 2013-02-21 Toshiba Corp Wire bonding device and semiconductor device manufacturing method

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