JPH04155843A - Wire bonding method - Google Patents
Wire bonding methodInfo
- Publication number
- JPH04155843A JPH04155843A JP2279260A JP27926090A JPH04155843A JP H04155843 A JPH04155843 A JP H04155843A JP 2279260 A JP2279260 A JP 2279260A JP 27926090 A JP27926090 A JP 27926090A JP H04155843 A JPH04155843 A JP H04155843A
- Authority
- JP
- Japan
- Prior art keywords
- capillary
- wire
- bonding point
- bonding
- moved
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 19
- 239000008188 pellet Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/788—Means for moving parts
- H01L2224/78801—Lower part of the bonding apparatus, e.g. XY table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
- H01L2224/8212—Aligning
- H01L2224/82148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/82169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, e.g. nozzle
- H01L2224/8218—Translational movements
- H01L2224/82181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、半導体装置の組立工程において、第１ボンデ
ィング点と第２ボンディング点との間をワイヤで接続す
るワイヤボンディング方法に関し、特に、超音波振動を
印加してボンディング接続を行う場合のワイヤボンディ
ング方法に関する。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a wire bonding method for connecting a first bonding point and a second bonding point with a wire in the assembly process of a semiconductor device, and particularly relates to a wire bonding method for connecting a first bonding point and a second bonding point with a wire in a semiconductor device assembly process. The present invention relates to a wire bonding method in which a bonding connection is performed by applying sonic vibration.
［背景技術］
従来、この種のワイヤボンディング方法は、第１ボンデ
ィング点であるＩＣベレット事５パッド（電極）にワイ
ヤを接続後、ワイヤのループ形成に必要な量だけキャピ
ラリを上昇させてワイヤを繰り出した後、キャピラリを
移動させてワイヤを第２ボンディング点となるリードに
接続する。この時のワイヤループの軌跡は、特開昭５３
−２６６６８号に開示されているような種々のワイヤル
ープ形状が提案されている。[Background Art] Conventionally, this type of wire bonding method involves connecting a wire to the five pads (electrodes) of an IC pellet, which is the first bonding point, and then raising the capillary by an amount necessary to form a loop of the wire to raise the wire. After being unwound, the capillary is moved to connect the wire to the lead serving as the second bonding point. The trajectory of the wire loop at this time was
Various wire loop shapes have been proposed, such as that disclosed in No. 26,668.
このワイヤボンディング方法では、ワイヤをりランプす
るクランパ（図示せず）が閉の状態でキャピラリ先端よ
り繰り出されているワイヤ先端にボールが形成された後
に、クランプを開としてワイヤが巻取られてキャピラリ
先端にボールが係止された状態でキャピラリを下方に移
動させて第１ボンイング点となるＩＣベレット上のパッ
ドに熱圧着及び超音波振動によるボンディングを行う。In this wire bonding method, a clamper (not shown) for re-ramping the wire is closed and a ball is formed at the tip of the wire that is let out from the tip of the capillary, then the clamp is opened and the wire is wound up and placed into the capillary. With the ball locked at the tip, the capillary is moved downward, and bonding is performed by thermocompression and ultrasonic vibration to the pad on the IC pellet, which will be the first bonding point.
その後、この第１ボンディング点よりキャピラリを上昇
させてワイヤを繰り出し、図示せぬ制御回路に配憶され
たプログラムにしたがって所定のワイヤループでキャピ
ラリを第２ボンディング点となるリード上方に移動後下
降して熱圧着及び超音波振動によるボンディング接続を
行う。Thereafter, the capillary is raised from this first bonding point to feed out the wire, and the capillary is moved to the second bonding point above the lead using a predetermined wire loop according to a program stored in a control circuit (not shown), and then lowered. The bonding connection is performed using thermocompression and ultrasonic vibration.
［発明が解決しようとする課題］
しかしながら、従来のワイヤボンディング方法では、第
２区に示すように、第２ボンディング点となるリード７
とワイヤ１のボンディング接続を行う際に、第２ボンデ
ィング点上方にキャピラリ３を移動させた後、キャピラ
リ３を下方に移動させてワイヤ１を押し潰して熱圧着ボ
ンディングを行う。この時、ワイヤｌの太さは、β１の
径のものが用いられているが、押し潰された時はワイヤ
径がβ２の厚さとなり、第３図のような扁平形状に押し
潰される。[Problems to be Solved by the Invention] However, in the conventional wire bonding method, as shown in Section 2, the lead 7 serving as the second bonding point
When bonding the wire 1 to the wire 1, the capillary 3 is moved above the second bonding point, and then the capillary 3 is moved downward to crush the wire 1 and perform thermocompression bonding. At this time, the wire I used has a diameter of β1, but when crushed, the wire diameter becomes β2 and the wire is crushed into a flat shape as shown in FIG.
この第３図の状態で、超音波振動が矢印ＵＳ方向に伝達
されると、ワイヤ径が１２２の箇所で更に圧着するよう
にこすられるので、超音波振動が印加された時に断線、
接続不良等の問題が起こることがあるという欠点がある
。このボンディング時に断線等が起こらず、正常にボン
ディング接続されたようにみえる場合でも、第２ボンデ
ィング点接続後は、キャピラリ３を所定の高さまで上昇
させてから、クランパを閉じ、更にキャピラリ３を上昇
する過程でワイヤ１の先端を第２ボンディング点より切
断するので、このような切断過程でボンディング不良が
発生する可能性がある。When the ultrasonic vibration is transmitted in the direction of the arrow US in the state shown in Fig. 3, the wire is further rubbed at the point where the diameter is 122, so that the wire may break or break when the ultrasonic vibration is applied.
The drawback is that problems such as poor connections may occur. Even if there is no disconnection during bonding and the bonding appears to be normal, after connecting the second bonding point, raise the capillary 3 to a predetermined height, close the clamper, and then raise the capillary 3. During this process, the tip of the wire 1 is cut from the second bonding point, so there is a possibility that bonding defects may occur during such a cutting process.
本発明は、上記従来技術の欠点に鑑みてなされたもので
あって、第２ボンディング点におけるボンディング接続
を確実に行うことのできるワイヤボンディング方法を提
供することを目的とする。The present invention has been made in view of the above-mentioned drawbacks of the prior art, and it is an object of the present invention to provide a wire bonding method that can reliably perform bonding connection at the second bonding point.
［課題を解決するための手段］
本発明は、第１ボンディング点にワイヤを接続後、キャ
ピラリをワイヤループの形成に必要な量だけキャピラリ
を上昇させてワイヤを繰り出した後、キャピラリを第２
ボンディング点より所定距離能れた上方位置まで移動し
た後、キャピラリを第１ボンディング点方向に前記距離
分戻して第２ボンディング点上方に移動させ、該位置か
ら第２ボンディング点まで下降移動させて第２ボンディ
ング点に前記ワイヤを接続させ、かつ微少な距離第１ボ
ンディング点方向にキャピラリを移動させて超音波振動
を印加するようにしたものである。[Means for Solving the Problems] In the present invention, after connecting a wire to a first bonding point, the capillary is raised by an amount necessary to form a wire loop to let out the wire, and then the capillary is moved to a second bonding point.
After moving the capillary to a position above the bonding point by a predetermined distance, the capillary is moved back in the direction of the first bonding point by the distance above the second bonding point, and then moved downward from this position to the second bonding point. The wire is connected to two bonding points, and the capillary is moved a small distance in the direction of the first bonding point to apply ultrasonic vibration.
［実施例コ
次に、本発明の実施例について図面を用いて詳細に説明
する。[Embodiments] Next, embodiments of the present invention will be described in detail with reference to the drawings.
第１図（ａ）乃至（ｅ）は、本発明に係るワイヤボンデ
ィング方法の工程を示す説明図、第２図及び第３図は、
ワイヤをキャピラリで押し潰した状態を示す正面図及び
その平面図である。なお、従来と同じ方法のものは、同
一の符合を用いて説明する。FIGS. 1(a) to (e) are explanatory diagrams showing the steps of the wire bonding method according to the present invention, and FIGS. 2 and 3 are
FIG. 2 is a front view and a plan view thereof showing a state in which a wire is crushed by a capillary. Note that the same method as the conventional method will be explained using the same reference numeral.
第１図（ａ）乃至（ｅ）において、第１図（ａ）は、ワ
イヤ１をクランプするクランパ（図示せず）が閉の状態
で、キャピラリ３先端より所定の長さ繰り出されている
ワイヤ１の先端にボール２を形成後、クランパを開とし
てワイヤ１が図示せぬリールに巻取られてキャピラリ３
の先端にボール２が係止された状態が示されている。そ
して、キャピラリ３は、フレーム４上に配設されたＩＣ
ベレット５上のパッド（１ｉ極）６の上方に位置決めさ
れている。In FIGS. 1(a) to (e), FIG. 1(a) shows the wire being let out for a predetermined length from the tip of the capillary 3 with the clamper (not shown) that clamps the wire 1 in a closed state. After forming the ball 2 at the tip of the capillary 3, the clamper is opened and the wire 1 is wound onto a reel (not shown), and the wire 1 is wound into the capillary 3.
The state in which the ball 2 is locked at the tip is shown. The capillary 3 is connected to an IC mounted on the frame 4.
It is positioned above the pad (1i pole) 6 on the pellet 5.
第１図（ａ）のクランパが開状態で、第１図（ｂ）に示
すようにキャピラリ３を下方に移動させて第１ボンディ
ング点であるパッド６にワイヤＩｔのボール２を押し潰
して熱圧着ボンディングをした後、そのままキャピラリ
３を必要なワイヤループの長さとなる高さまで上昇させ
、クランパを閉じる。そして、図示せぬマイクロコンピ
ュータ等よりなる制御回路内の記憶回路に予め記憶され
ているプログラムにしたがって、ＸＹテーブル（図示せ
ず）によりキャピラリ３をＸ方向及び／又はＹ方向に移
動させてほぼ円弧状の軌跡を描きながら第２ボンディン
グ点となるリード７の上方に移動させる。この時、リー
ド７の上面からキャピラリ３の先端までの高さをｈｌと
する。この高さり、は、任意の高さでよいが、第１図（
Ｃ）に示すようにＩＣペレット５の方向にキャピラリ３
を移動させた時にワイヤ１の折り曲げられた先端がリー
ド７上面に接触しない高さｈ２よりも高くなるように設
定されている。本実施例では、ｈ、は、約３００〜４０
０ ｕｒｎの範囲で設定されている。With the clamper in FIG. 1(a) open, the capillary 3 is moved downward as shown in FIG. 1(b), and the ball 2 of the wire It is crushed and heated to the pad 6, which is the first bonding point. After crimp bonding, the capillary 3 is raised to a height corresponding to the required length of the wire loop, and the clamper is closed. Then, the capillary 3 is moved in the X direction and/or the Y direction using an XY table (not shown) in accordance with a program stored in advance in a storage circuit in a control circuit made up of a microcomputer (not shown), etc., so that the capillary 3 is approximately circular. It is moved above the lead 7, which becomes the second bonding point, while drawing an arc-shaped trajectory. At this time, the height from the top surface of the lead 7 to the tip of the capillary 3 is defined as hl. This height may be any height, but it can be any height shown in Figure 1 (
Insert the capillary 3 in the direction of the IC pellet 5 as shown in C).
The bent tip of the wire 1 is set to be higher than a height h2 at which the bent tip of the wire 1 does not come into contact with the upper surface of the lead 7 when the lead 7 is moved. In this example, h is approximately 300 to 40
It is set in the range of 0 urn.
そして、第１図（ｂ）の位置から第１図（ｃ）の距離Ｓ
１（約５０〜１０１００ＬＬ離れた位置、すなわち第２
ボンディング点となるリード７の上方まで平行にキャピ
ラリ３をＸＹテーブルの移動により移動させる。Then, the distance S shown in FIG. 1(c) from the position shown in FIG. 1(b)
1 (approximately 50 to 10100 LL apart, i.e. the second
The capillary 3 is moved in parallel to above the lead 7, which is the bonding point, by moving the XY table.
次に、第１図（ｄ）に示すようにキャピラリ３を第２ボ
ンディング点のリード７の上面に下降移動させた後、第
１図（ｅ）に示すようにワイヤ１を第２図図示の如くワ
イヤ径が２２の厚さとなるまで押し潰す。Next, as shown in FIG. 1(d), the capillary 3 is moved down to the upper surface of the lead 7 at the second bonding point, and then the wire 1 is moved to the upper surface of the lead 7 at the second bonding point, as shown in FIG. 1(e). Crush the wire until it has a thickness of 22mm in diameter.
この押し潰された状態で、キャピラリ３をＸＹテーブル
を微少な距離Ｓ２（約２０〜４０μｍ）移動させて第１
図（ｅ）の破線位置まで移動させる。そして、この移動
された位置で超音波振動をキャピラリ３の先端に印加す
るー。こうすることによって、第３図で示すようにキャ
ピラリ３の中心○の時は、ワイヤ径が２２で扁平部分１
ａから、移動後にはキャピラリ３の中心が距離Ｓ２離れ
た０′の部分１ｂとなり、ワイヤ径もほぼＰ、の太さを
有する位置で接続することが可能となる。In this crushed state, move the XY table by a minute distance S2 (approximately 20 to 40 μm) to move the capillary 3 to the first
Move it to the position shown by the broken line in figure (e). Then, ultrasonic vibration is applied to the tip of the capillary 3 at this moved position. By doing this, when the center of the capillary 3 is ○ as shown in Fig. 3, the wire diameter is 22 and the flat part 1 is
After moving from a, the center of the capillary 3 becomes a portion 1b at 0', which is a distance S2 away, and the wire diameter can be connected at a position having a thickness of approximately P.
故に、本実施例によれば、第２ボンディング点でワイヤ
１を一度押し潰した後に、更に所定距離キャピラリ３を
移動させてワイヤ径の太い部分で超音波振動を伝達させ
るようにしたので、ワイヤ１とリード７とを確実に接続
させることができる。Therefore, according to this embodiment, after the wire 1 is crushed once at the second bonding point, the capillary 3 is further moved a predetermined distance to transmit the ultrasonic vibration at the part where the wire diameter is large. 1 and the lead 7 can be reliably connected.
［発明の効果］
以上説明したように、本発明によれば、第２ボンディン
グ点でワイヤを一度押し潰した後に更に所定距離キャピ
ラリを移動させてワイヤの径の太い部分で超音波振動を
伝達させるようにしたので、ワイヤとリードとを確実に
接続できる効果がある。[Effects of the Invention] As explained above, according to the present invention, after the wire is crushed once at the second bonding point, the capillary is further moved a predetermined distance to transmit ultrasonic vibrations at the thicker diameter portion of the wire. This has the effect that the wire and the lead can be connected reliably.
第１図（ａ）乃至（ｅ）は、本発明に係るワイヤボンデ
ィング方法の過程を示す説明図、第２図及び第３図は、
ワイヤをキャピラリで押し潰した状態を示す正面図及び
その平面図である。
１・・・ワイヤ、２・・・ボール、３・・・キャピラリ
、４・・・フレーム、５・・・ＩＣベレット、６・ ・
・パッド、７・ ・ ・リード。
特許出願人 海上電機株式会社
代理人 弁理士 羽 切 正 治
第２図
第３図FIGS. 1(a) to (e) are explanatory diagrams showing the process of the wire bonding method according to the present invention, and FIGS. 2 and 3 are
FIG. 2 is a front view and a plan view thereof showing a state in which a wire is crushed by a capillary. 1... Wire, 2... Ball, 3... Capillary, 4... Frame, 5... IC pellet, 6...
・Pad, 7... ・Lead. Patent Applicant: Kaiyo Denki Co., Ltd. Agent: Patent Attorney: Masaharu Hakiri Figure 2, Figure 3
Claims (2)
をワイヤで接続するワイヤボンディング方法において、
第１ボンディング点にワイヤを接続後、キャピラリをワ
イヤループの形成に必要な量だけキャピラリを上昇させ
てワイヤを繰り出した後、キャピラリを第２ボンディン
グ点より所定距離離れた上方位置まで移動した後、キャ
ピラリを第１ボンディング点方向に前記距離分戻して第
２ボンディング点上方に移動させ、該位置から第２ボン
ディング点まで下降移動させて第２ボンディング点に前
記ワイヤを接続させ、かつ微少な距離第１ボンディング
点方向にキャピラリを移動させて超音波振動を印加する
ようにしたことを特徴とするワイヤボンディング方法。(1) In a wire bonding method that connects a first bonding point and a second bonding point with a wire,
After connecting the wire to the first bonding point, the capillary is raised by an amount necessary to form a wire loop to let out the wire, and after moving the capillary to an upper position a predetermined distance away from the second bonding point, The capillary is returned by the distance in the direction of the first bonding point, moved above the second bonding point, moved downward from this position to the second bonding point to connect the wire to the second bonding point, and A wire bonding method characterized in that ultrasonic vibration is applied by moving a capillary in the direction of one bonding point.
特徴とする請求項（１）記載のワイヤボンディング方法
。(2) The wire bonding method according to claim 1, wherein the second bonding point is a lead.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2279260A JP2579833B2 (en) | 1990-10-19 | 1990-10-19 | Wire bonding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2279260A JP2579833B2 (en) | 1990-10-19 | 1990-10-19 | Wire bonding method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04155843A true JPH04155843A (en) | 1992-05-28 |
| JP2579833B2 JP2579833B2 (en) | 1997-02-12 |
Family
ID=17608685
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2279260A Expired - Lifetime JP2579833B2 (en) | 1990-10-19 | 1990-10-19 | Wire bonding method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2579833B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103199028A (en) * | 2012-01-10 | 2013-07-10 | 株式会社东芝 | Manufacturing method and bonding device of semiconductor device |
| JP2018121000A (en) * | 2017-01-27 | 2018-08-02 | 日亜化学工業株式会社 | Method for manufacturing light-emitting device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62108533A (en) * | 1985-11-06 | 1987-05-19 | Matsushita Electric Ind Co Ltd | Wire bonding method |
| JPH01276729A (en) * | 1988-04-28 | 1989-11-07 | Nec Kansai Ltd | Wire bonding |
-
1990
- 1990-10-19 JP JP2279260A patent/JP2579833B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62108533A (en) * | 1985-11-06 | 1987-05-19 | Matsushita Electric Ind Co Ltd | Wire bonding method |
| JPH01276729A (en) * | 1988-04-28 | 1989-11-07 | Nec Kansai Ltd | Wire bonding |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103199028A (en) * | 2012-01-10 | 2013-07-10 | 株式会社东芝 | Manufacturing method and bonding device of semiconductor device |
| JP2018121000A (en) * | 2017-01-27 | 2018-08-02 | 日亜化学工業株式会社 | Method for manufacturing light-emitting device |
| US10181452B2 (en) | 2017-01-27 | 2019-01-15 | Nichia Corporation | Method for manufacturing light-emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2579833B2 (en) | 1997-02-12 |
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