JPS62140428A - Wire bonding method - Google Patents
Wire bonding methodInfo
- Publication number
- JPS62140428A JPS62140428A JP60282417A JP28241785A JPS62140428A JP S62140428 A JPS62140428 A JP S62140428A JP 60282417 A JP60282417 A JP 60282417A JP 28241785 A JP28241785 A JP 28241785A JP S62140428 A JPS62140428 A JP S62140428A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- bonding
- insulating film
- bonded
- lead frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/01082—Lead [Pb]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は絶縁被膜で被覆されたワイヤをボンディング
するワイヤボンディング方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a wire bonding method for bonding wires coated with an insulating film.
半導体素子に設けられた電極と、リードフレームに設け
られた端子とを心気的に導通させる場合、これら両者を
ワイヤで接続する、いわゆるワイヤボンディングが知ら
れている。ワイヤボンディングは、周知のように超音彼
撮動が与えられるキャピラリにワイヤが通され、このワ
イヤに超音改振動する上記キャピラリで所定のボンディ
ング荷重を加えることによって上記半導体素子の電極と
、リードフレームの端子とに上記ワイヤをボンディング
するようにしている。2. Description of the Related Art When electrically conducting an electrode provided on a semiconductor element and a terminal provided on a lead frame, so-called wire bonding is known in which the two are connected with a wire. As is well known, in wire bonding, a wire is passed through a capillary to which ultrasonic vibration is applied, and a predetermined bonding load is applied to this wire by the capillary that vibrates with ultrasonic vibration, thereby bonding the electrodes of the semiconductor element and the leads. The wires are bonded to the terminals of the frame.
ところで、近時半導体素子の高密度化にともないボンデ
ィングされるワイヤ間の隙間が非常に狭くなってきてい
る。そのため、ボンディングされたワイヤがわずかに倒
れるなどしただけで１ｉｌｌＩｖ合うワイヤが互いに接
触して不良品の発生を招くということがあった。そこで
、このような欠点を除去するため、絶縁被膜で被覆され
たワイヤを用いてボンディングすることが考えられてい
る。このようなワイヤを用いる場合、半導体素子の電極
（これを第１のボンディング部とする）へのボンディン
グは、上記ワイヤ全トーチでカロ熱してボールを形成し
てから行なう泥め、ワイヤを被覆した絶縁被膜がボンデ
イングの邪魔になることがない。しかしながら、リード
フレームの端子（これを第２のボンディング部とする）
ヘボンデイングする場合は、上記ワイヤは絶縁被膜を介
して上記第２のボンディング部に接触することになる。Incidentally, as the density of semiconductor devices has increased in recent years, the gap between wires to be bonded has become extremely narrow. Therefore, even if the bonded wires were to fall down slightly, the matched wires would come into contact with each other, resulting in the production of defective products. Therefore, in order to eliminate such drawbacks, it has been considered to perform bonding using a wire coated with an insulating film. When such a wire is used, bonding to the electrode of the semiconductor element (this is used as the first bonding part) is performed by heating all of the wires with a torch to form a ball, and then using a clay coated wire to form a ball. The insulation film does not interfere with bonding. However, the lead frame terminal (this is the second bonding part)
In the case of head bonding, the wire comes into contact with the second bonding part through the insulating coating.
したがって、ボンディング時に上記ワイヤにキャピラリ
の超音ｄｉ動を単に１１口えるだけでは、絶縁被膜が確
実に除去された状態でボンディングすることができない
ことがあるので、そのボンディング強度が十分に得られ
ず、上記ワイヤが第２のボンディング部からはがれてし
まうという問題が生じる。Therefore, simply applying 11 ultrasonic diode motions of the capillary to the wire during bonding may not be able to perform bonding with the insulating film reliably removed, and therefore sufficient bonding strength may not be obtained. , a problem arises in that the wire is peeled off from the second bonding part.
この発明は、絶縁被膜で被覆されたワイヤをボンディン
グ部にボンディングするときに、上記絶縁被膜を良好に
除去して行なえるようにしたワイヤボンディング方法を
提供することを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide a wire bonding method in which a wire coated with an insulating film can be bonded to a bonding portion by removing the insulating film in a good manner.
この発明は、絶縁被膜で被覆されたワイヤをボンデ゛イ
ング部にボンディングするときに、上記ボンディング部
に上記ワイヤを絶縁被膜を介して液滴させた状態で第１
のボンディング荷重を所定時間かけて上記絶縁被膜を除
去したのち、さらに第２のボンディング荷重を所定時間
かけて上記ワイヤをボンディングするようにした方法で
ある。In this invention, when a wire coated with an insulating film is bonded to a bonding part, a droplet of the wire is dropped on the bonding part through the insulating film.
In this method, the insulating film is removed by applying a second bonding load for a predetermined time, and then the wire is bonded by applying a second bonding load for a predetermined time.
以下、この発明の一実施例を図面を参照して説明する。 An embodiment of the present invention will be described below with reference to the drawings.
ＪＸ１図中１はワイヤボンディング装置の超音ｅ、振動
する図示せぬ超音波ホーンの先端に収着されたキャピラ
リである。このキャピラリ１にはビニールなどの絶縁被
膜２で被覆されたワイヤ３が挿通され、このワイヤ３は
上記キャピラリ１の下端面から所定長さ突出している。JX1 In the figure, 1 is a capillary that is absorbed by the tip of a vibrating ultrasonic horn (not shown) that emits ultrasonic waves e of a wire bonding device. A wire 3 covered with an insulating coating 2 made of vinyl or the like is inserted through the capillary 1, and the wire 3 protrudes from the lower end surface of the capillary 1 by a predetermined length.
このワイヤ３の突出端には図示せぬトーチで加熱される
ことによってボール４が形成されている。したがって、
このボール４の部分からは上記絶縁被膜２が除去されて
いる。A ball 4 is formed at the protruding end of the wire 3 by heating with a torch (not shown). therefore,
The insulating coating 2 has been removed from this ball 4 portion.
このような状態にあるキャピラリ１の下方に半導体素子
５がダイボンディングされているとともに、図示せぬヒ
ータで加熱されるリードフレーム６が搬送されてくると
、そのことが図示せぬ七ン丈で倹知されてワイヤボンデ
ィング工程が開始される。このワイヤボンディング工程
は、第５図のキャピラリ１の変位曲線の中入で示すよう
に、まずキャピラリ１が第１のボンディング部である上
記半導体素子５の電極５ａ上に下降し、上記ワイヤ３の
先端に形成されたボール４を上記電極５ａに押上する。The semiconductor element 5 is die-bonded below the capillary 1 in this state, and when the lead frame 6, which is heated by a heater (not shown), is transported, this is caused by a 7-inch length (not shown). The wire bonding process is then started. In this wire bonding process, the capillary 1 is first lowered onto the electrode 5a of the semiconductor element 5, which is the first bonding part, as shown by the inset of the displacement curve of the capillary 1 in FIG. The ball 4 formed at the tip is pushed up onto the electrode 5a.
この状態で上記ボール４にキャピラリ１からの超音波振
動と囚示せぬヒータからの熱が加えられることにより、
第２図に示すように上記ボール４が上記半導本素子５の
電極５ａにボンディングされる。In this state, ultrasonic vibrations from the capillary 1 and heat from an uncontrolled heater are applied to the ball 4, so that
As shown in FIG. 2, the ball 4 is bonded to the electrode 5a of the semiconductor element 5.
つぎに、上記キャビラ１が第５図の変位曲線の８で示す
ように上昇したのち、上記リードフレーム６の端子６ａ
上方に位置決めされる。そして、同図にＣで示すように
上記キャピラリ１が下降してその下端面が絶縁被膜２で
被覆されたワイヤ３を介して上記端子６ａに圧接する。Next, after the cabinet 1 rises as shown by 8 in the displacement curve in FIG. 5, the terminal 6a of the lead frame 6
positioned upwards. Then, as shown by C in the figure, the capillary 1 descends and its lower end surface is pressed into contact with the terminal 6a via the wire 3 covered with the insulating coating 2.
この状態で上記ワイヤ３にはキャピラリ１からの超音波
振動と、リードフレーム６を介して図示せぬヒータから
の熱とが所定時間加えられる。In this state, ultrasonic vibration from the capillary 1 and heat from a heater (not shown) are applied to the wire 3 via the lead frame 6 for a predetermined period of time.
すなわち、ワイヤ３に第１のボンディング荷重が所定時
間加えられる。この状態を第３図に示す。すると、リー
ドフレーム６の端子６ａとキャピラリ１の下端面とで挾
持された部分のワイヤ３を被覆した絶縁被膜２が超音波
振動による摩擦熱とヒータからの熱とによって溶融除去
されることになる。つぎに、上記キャピラリ１は第５図
にＤで示すようにさらに下降して絶縁被膜２が除去され
たワイヤ３に超音波振動を所定時間加える。つまり、ワ
イヤ３に第２のボンディング荷重が加えられる。すると
、上記ワイヤ３がキャピラリ１からの超音波振動による
摩擦熱とヒータからの熱とによって溶＋！されて上記リ
ードフレーム６の端子６ａにボンディングされることに
なる。そのうち、キャピラリ１が上昇し、所定の位置で
図示しないクランプを閉じる。さらにクランプを閉じた
まま、キャピラリを昇してワイヤに張力を加えることに
より、上記ワイヤ３が第４図に示すようにリードフレー
ム６の端子６ａにボンディングされた個所から切断され
る。That is, the first bonding load is applied to the wire 3 for a predetermined period of time. This state is shown in FIG. Then, the insulating coating 2 covering the wire 3 in the portion held between the terminal 6a of the lead frame 6 and the lower end surface of the capillary 1 is melted and removed by the frictional heat caused by the ultrasonic vibration and the heat from the heater. . Next, the capillary 1 is further lowered as shown by D in FIG. 5, and ultrasonic vibration is applied to the wire 3 from which the insulation coating 2 has been removed for a predetermined period of time. That is, a second bonding load is applied to the wire 3. Then, the wire 3 melts due to the frictional heat generated by the ultrasonic vibration from the capillary 1 and the heat from the heater! Then, it is bonded to the terminal 6a of the lead frame 6. Eventually, the capillary 1 rises and closes a clamp (not shown) at a predetermined position. Furthermore, by raising the capillary and applying tension to the wire while keeping the clamp closed, the wire 3 is cut from the point where it is bonded to the terminal 6a of the lead frame 6, as shown in FIG.
すなわち、上記ボンディング方法によれば、絶縁被膜２
が被覆されたワイヤ３をリードフレーム６の端子６ａに
ボンディングする際に、最初に上記ワイヤ３に第１のボ
ンディング荷重を所定時間かけて絶縁被膜２ｔ−除去し
、ついで第２のボンディング荷重全顎えることによって
上記ワイヤ３をリードフレーム６の端子６ａにボンディ
ングするようにした。したがって、ワイヤ３は絶縁被膜
２を良好に除去された状態で上記リードフレーム６の端
子６ａにボンディングされるから、十分な強度でのボン
ディングが可能となる。That is, according to the above bonding method, the insulating coating 2
When bonding the wire 3 coated with the wire 3 to the terminal 6a of the lead frame 6, first the first bonding load is applied to the wire 3 for a predetermined period of time to remove the insulation coating 2t, and then the second bonding load is applied to the entire wire 3. The wire 3 is bonded to the terminal 6a of the lead frame 6 by holding the wire 3 to the terminal 6a of the lead frame 6. Therefore, since the wire 3 is bonded to the terminal 6a of the lead frame 6 with the insulating coating 2 well removed, bonding with sufficient strength is possible.
なお、この発明のボンディング方法において、ボンディ
ング時にリードフレームが載置されるテーブルに微小振
動を与えるようにすれば、絶縁被膜の除去やワイヤのボ
ンディングを一層良好に行なうことができ−る。In addition, in the bonding method of the present invention, if micro vibrations are applied to the table on which the lead frame is placed during bonding, the removal of the insulating coating and bonding of the wires can be performed even better.
以上述べたようにこの発明は、ボンディング部にワイヤ
を絶縁被膜を介して接触させた状態で第１のボンディン
グ荷重を所定時間かけたのち、さらに第２のボンディン
グ荷重を所定時間かけるようにした。したがって、＠１
のボンディング荷重を所定時間かけることによってワイ
ヤを被覆した絶縁被膜が良好に除去され、この状態で第
２のボンディング荷重を所定時間かけることにより上記
ワイヤがボンディング部にボンディングされるので、ボ
ンディング部とワイヤとの間に絶縁被膜が介在すること
なく、十分な結合強度のボンディング全行なうことがで
きる。As described above, in the present invention, the first bonding load is applied for a predetermined time with the wire in contact with the bonding portion via the insulating coating, and then the second bonding load is further applied for a predetermined time. Therefore @1
By applying a second bonding load for a predetermined period of time, the insulating coating covering the wire is successfully removed, and in this state, by applying a second bonding load for a predetermined period of time, the wire is bonded to the bonding part, so that the wire is bonded to the bonding part. All bonding can be performed with sufficient bonding strength without intervening an insulating film between the two.
図面はこの発明の一実施例を示し、第１図乃至第４図は
ワイヤボンディング工程を順欠示し九説明図、第５図は
キャピラリの変位曲線図である。
１・・・キャピラリ、２・・・絶縁被膜、３・・・ワイ
ヤ、４・・・ボール、６゛ａ・・・リードフレームの端
子（ボンディング部）。
出願人代理人 弁理士 鈴 江 武 彦第５図
第３図
す
第４図The drawings show one embodiment of the present invention, and FIGS. 1 to 4 are nine explanatory diagrams showing the wire bonding process in sequence, and FIG. 5 is a capillary displacement curve diagram. DESCRIPTION OF SYMBOLS 1... Capillary, 2... Insulating coating, 3... Wire, 4... Ball, 6'a... Lead frame terminal (bonding part). Applicant's Representative Patent Attorney Takehiko Suzue Figure 5 Figure 3 Figure 4
Claims (1)
ディングする方法において、上記ボンディング部に上記
ワイヤを絶縁被膜を介して接触させた状態で第１のボン
ディング荷重を所定時間かけたのち、さらに第２のボン
ディング荷重を所定時間かけて上記ワイヤをボンディン
グすることを特徴とするワイヤボンディング方法。In the method of bonding a wire coated with an insulating coating to a bonding part, a first bonding load is applied for a predetermined time with the wire in contact with the bonding part via the insulating coating, and then a second bonding is applied. A wire bonding method characterized in that the wire is bonded by applying a load for a predetermined period of time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60282417A JPS62140428A (en) | 1985-12-16 | 1985-12-16 | Wire bonding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60282417A JPS62140428A (en) | 1985-12-16 | 1985-12-16 | Wire bonding method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62140428A true JPS62140428A (en) | 1987-06-24 |
Family
ID=17652137
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60282417A Pending JPS62140428A (en) | 1985-12-16 | 1985-12-16 | Wire bonding method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62140428A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63318132A (en) * | 1987-06-19 | 1988-12-27 | Hitachi Ltd | Semiconductor device and bonding method and device for manufacturing same |
| JPH0254947A (en) * | 1988-08-19 | 1990-02-23 | Hitachi Ltd | Method and apparatus for assembly of semiconductor device |
| JPH06209032A (en) * | 1993-01-08 | 1994-07-26 | Nippon Steel Corp | Device and method for wire bonding |
| US5816480A (en) * | 1995-11-24 | 1998-10-06 | Kabushiki Kaisha Shinkawa | Method for cleaning a bonding tool used on covered bonding wires |
-
1985
- 1985-12-16 JP JP60282417A patent/JPS62140428A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63318132A (en) * | 1987-06-19 | 1988-12-27 | Hitachi Ltd | Semiconductor device and bonding method and device for manufacturing same |
| JPH0254947A (en) * | 1988-08-19 | 1990-02-23 | Hitachi Ltd | Method and apparatus for assembly of semiconductor device |
| JPH06209032A (en) * | 1993-01-08 | 1994-07-26 | Nippon Steel Corp | Device and method for wire bonding |
| US5816480A (en) * | 1995-11-24 | 1998-10-06 | Kabushiki Kaisha Shinkawa | Method for cleaning a bonding tool used on covered bonding wires |
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