JPS6120135B2 - - Google Patents

Info

Publication number
JPS6120135B2
JPS6120135B2 JP8385778A JP8385778A JPS6120135B2 JP S6120135 B2 JPS6120135 B2 JP S6120135B2 JP 8385778 A JP8385778 A JP 8385778A JP 8385778 A JP8385778 A JP 8385778A JP S6120135 B2 JPS6120135 B2 JP S6120135B2
Authority
JP
Japan
Prior art keywords
jig
lead
bonding
conductive
hard insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP8385778A
Other languages
Japanese (ja)
Other versions
JPS5511344A (en
Inventor
Naoto Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
Original Assignee
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Kyushu Ltd filed Critical NEC Kyushu Ltd
Priority to JP8385778A priority Critical patent/JPS5511344A/en
Publication of JPS5511344A publication Critical patent/JPS5511344A/en
Publication of JPS6120135B2 publication Critical patent/JPS6120135B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Description

【発明の詳細な説明】 本発明は半導体集積回路の内部接続（以下ボン
デングという）方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for internally connecting semiconductor integrated circuits (hereinafter referred to as bonding).

第１図イ，ロにおいて、従来より、半導体集積
回路のペレツト１と、リード２とを接続するには
接続導線として金ワイヤなどを使用し、いずれの
側に対しても熱圧着法によりボンデングを行なつ
ていた。しかしこの方法によるときにはリード２
側の接着性を向上するためにリード素材（コバ
ー、42合金等）の表面に予じめ金あるいは銀メツ
キなどを施こさなければならないという欠点があ
つた。さらにペレツト１とリード２とを金ワイヤ
３などで接続した後、これを合成樹脂などで保護
するのであるが、この操作中、合成樹脂材がリー
ド２の表面に付着すると、後にリード処理工程と
して必要なすずメツキ処理において、合成樹脂が
被着したその表面にすずメツキを施すことが困難
となるため、リード処理工程の以前にリード表面
に付着した合成樹脂を除去しなければならなかつ
た。 In Figures 1A and 1B, conventionally, a gold wire or the like is used as a connecting conductor to connect the pellet 1 of a semiconductor integrated circuit and the lead 2, and bonding is performed on either side by thermocompression bonding. I was doing it. However, when using this method, lead 2
The drawback was that gold or silver plating had to be applied to the surface of the lead material (Covar, 42 alloy, etc.) in advance to improve the adhesion of the sides. Furthermore, after connecting the pellet 1 and the lead 2 with a gold wire 3, etc., this is protected with a synthetic resin, etc. During this operation, if the synthetic resin material adheres to the surface of the lead 2, it will be removed later during the lead processing process. In the necessary tin plating process, it is difficult to apply tin plating to the surface coated with synthetic resin, so the synthetic resin adhering to the lead surface must be removed before the lead treatment process.

本発明は上記問題点を解消するもので、硬質絶
縁治具と、該硬質絶縁治具の外周に相対変位可能
と備えた輪状の導電治具とを交互に用いペレツト
側のボンデングは従来どおり熱圧着法によつて行
ない、リード側のボンデングを電気スポツト溶接
によつて行なうことにより、従来リード表面に前
処理として必要とされた金メツキの処理を不要な
らしめ、併せて予じめリード素材表面にすずメツ
キを施こすことにより、後の合成樹脂の除去工程
を不用ならしめてボンデング工程の簡略化を図る
ことを特徴とするものである。 The present invention solves the above problems, and uses alternately a hard insulating jig and a ring-shaped conductive jig that is movable relative to the outer periphery of the hard insulating jig, and bonding on the pellet side is carried out using heat as usual. By using the crimping method and bonding the lead side by electric spot welding, it is possible to eliminate the need for gold plating, which was conventionally required as a pretreatment on the lead surface. By applying tin plating to the material, the subsequent step of removing the synthetic resin is made unnecessary and the bonding step is simplified.

以下本発明の実施例を第２図イ，ロ，ハによつ
て説明する。本発明はペレツト１側のボンデング
を熱圧着方法で行ない、リード２側のボンデング
を電気スポツト溶接法で行なうものであるが、こ
の操作を行なう器具として円形断面を有する筒状
の熱圧着用の硬質絶縁治具（キヤピラリ）４と、
その周囲に相対変位可能に配置した電気スポツト
接着用輪状の導電治具（電極）５との組み合わせ
器具７を用いる。 Embodiments of the present invention will be described below with reference to FIGS. 2A, 2B, and 2C. In the present invention, the bonding on the pellet 1 side is carried out by a thermocompression method, and the bonding on the lead 2 side is carried out by an electric spot welding method.As an instrument for performing this operation, a cylindrical hard thermocompression bonding method having a circular cross section is used. Insulating jig (capillary) 4,
A combination device 7 is used in combination with a ring-shaped conductive jig (electrode) 5 for adhering an electric spot, which is arranged so as to be relatively displaceable around the electric spot.

キヤピラリ４および電極５は同軸に取付けられ
ており、それぞれ交互に独立した上下動を行なう
ように組み合わされているものである。この器具
を用いて本発明のボンデングを行なう場合につい
て説明する。 The capillary 4 and the electrode 5 are coaxially attached and are combined so that they can alternately move up and down independently. The case where the bonding of the present invention is performed using this instrument will be explained.

実施例は、リードフレーム６に支えられたペレ
ツト１と、リード２とをそれぞれ熱圧着接合およ
び電気スポツト溶接により金ワイヤ３を接合する
場合の例を示す。ペレツト１は予じめ適宜の加熱
手段により加熱されており、このペレツト１に対
しては、第２図イに示すように従来と同様にキヤ
ピラリ４内を挿通してその下端より引き出した金
ワイヤ３先端をキヤピラリ４の端縁でペレツト１
に押しつけて熱圧着をする。 In the embodiment, a gold wire 3 is bonded to a pellet 1 supported by a lead frame 6 and a lead 2 by thermocompression bonding and electric spot welding, respectively. The pellet 1 is heated in advance by an appropriate heating means, and a gold wire inserted through the capillary 4 and pulled out from the lower end of the capillary 4 is inserted into the pellet 1 as in the conventional case, as shown in FIG. Pellet 1 with the tip of 3 and the edge of capillary 4.
Press and heat-compress.

この燥作の際に、電極５は金ワイヤ３の圧着面
よりわずか上方に逃げた状態にある。ペレツト１
へのボンデングを完了した後、次に第２図ロに示
すように器具７をリード２側に移す。リード２へ
の金ワイヤ３のボンデングは電気スポツト溶接に
より行なうため、リード２の表面には予じめすず
メツキを施しておく。 During this drying, the electrode 5 is in a state in which it escapes slightly above the crimping surface of the gold wire 3. pellet 1
After completing the bonding to the lead 2, the instrument 7 is moved to the lead 2 side as shown in FIG. 2B. Since the gold wire 3 is bonded to the lead 2 by electric spot welding, the surface of the lead 2 is previously tin-plated.

リード２の上方に移した器具７におけるキヤピ
ラリ４は圧着面よりわずか上方に逃げ、同時に電
極５はリード２の圧着面に金ワイヤ３を介して電
気的に接続させる。リード２の下方にはグランド
電極８が設けられ、電源回路のスイツチ９を閉
じ、両電極５，８間に電源１０を投入する。電極
５，８に金ワイヤおよびリード２を介して通電さ
れ、この間の抵抗熱により電極５の端縁にて圧着
された金ワイヤ３とリード２とがスポツト溶接さ
れて金ワイヤ３がリード２に接合される。次に第
２図ハに示すようにリード２に接合された金ワイ
ヤ３をその接合部で切断し、リード２側のボンデ
ングを完了する。 The capillary 4 in the instrument 7 moved above the lead 2 escapes slightly above the crimping surface, and at the same time the electrode 5 is electrically connected to the crimping surface of the lead 2 via the gold wire 3. A ground electrode 8 is provided below the lead 2, a switch 9 of the power supply circuit is closed, and a power supply 10 is turned on between the electrodes 5 and 8. Electricity is applied to the electrodes 5 and 8 via the gold wire and the lead 2, and the gold wire 3 crimped at the edge of the electrode 5 and the lead 2 are spot-welded by the resistance heat generated during this time, and the gold wire 3 is attached to the lead 2. Joined. Next, as shown in FIG. 2C, the gold wire 3 bonded to the lead 2 is cut at the bonded portion to complete bonding on the lead 2 side.

本発明は以上のようにペレツト側ボンデングを
通常の如く熱圧着方式で行ない、リード側ボンデ
ングを電気スポツト溶接で行なうためにリード表
面には金メツキ処理を施こしておく必要がないば
かりか、予じめリード２の表面にすずメツキ処理
を施こしたうえで電気スポツト溶接を行なうこと
が可能となるためにボンデング後、合成樹脂被着
を行なつた場合にリード面上に付着した合成樹脂
材をその後の工程で除去する必要がなくなり、し
たがつてボンデング工程を簡略化できる。また、
本発明方法によれば、熱圧着用のキヤピラリ４
と、電気スポツト溶接用の電極５とを組み合わせ
た器具７と用い、キヤピラリ４と電極５とを交互
に上下動させることによつて簡単な操作によりキ
ヤピラリ又は電極の端縁で金ワイヤを抑えてそれ
ぞれリードおよびペレツトのボンデングを行なう
効果を有するものである。 As described above, the present invention performs bonding on the pellet side by thermocompression bonding as usual, and bonding on the lead side by electric spot welding, so it is not necessary to perform gold plating treatment on the lead surface in advance. Synthetic resin material adhered to the lead surface when synthetic resin was applied after bonding to enable electric spot welding after tin plating the surface of lead 2. There is no need to remove it in a subsequent process, thus simplifying the bonding process. Also,
According to the method of the present invention, the capillary 4 for thermocompression
and an electrode 5 for electric spot welding, and by moving the capillary 4 and the electrode 5 up and down alternately, the gold wire can be held down by the edge of the capillary or electrode with a simple operation. This has the effect of bonding the leads and pellets, respectively.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図イ，ロは従来の半導体内部接続方法を示
すもので、イはペレツト側ボンデング、ロはリー
ド側ボンデングの説明図、第２図イ，ロ，ハはそ
れぞれ本発明方法による半導体内部接続方法を示
すもので、イはペレツト側熱圧着ボンデング、ロ
はリード側電気スポツト溶接ボンデング、ハはボ
ンデング終了時の状態を示す説明図である。 １……ペレツト、２……リード、３……接続導
線（金ワイヤ）、４……硬質絶縁治具（キヤピラ
リ）、５……導電治具（電極）、７……器具。 Figures 1A and 1B show conventional semiconductor internal connection methods, in which 1A is an explanatory diagram of pellet side bonding, 2B is an explanatory diagram of lead side bonding, and 2A, 2B, and 2C are semiconductor internal connections by the method of the present invention, respectively. The method is shown in which A is thermocompression bonding on the pellet side, B is electric spot welding bonding on the lead side, and C is an explanatory diagram showing the state at the end of bonding. 1... Pellet, 2... Lead, 3... Connection conducting wire (gold wire), 4... Hard insulating jig (capillary), 5... Conductive jig (electrode), 7... Instrument.

Claims (1)

【特許請求の範囲】[Claims] １ 半導体集積回路の組み立てに際し、外周に輪
状の導電治具を相対変位可能に備えた硬質絶縁治
具内を通して接続導線を半導体素子上に導びき、
前記導電治具を上方へ待避させた状態で接続導線
を硬質絶縁治具の端縁で半導体素子に熱圧着し、
次いで硬質絶縁治具を半導体素子を接続すべき外
部端子上に移し、前記導電治具を相対的に下降さ
せ、硬質絶縁治具を上方へ待避させた状態で該導
電治具に通電し、接続導線を導電治具の端縁で外
部端子に圧着して電気スポツト溶接を行うことを
特徴とする半導体内部接続方法。1. When assembling a semiconductor integrated circuit, a connecting conductor is guided over a semiconductor element through a hard insulating jig equipped with a ring-shaped conductive jig on the outer periphery so as to be relatively displaceable.
With the conductive jig retracted upward, the connecting conductor is thermocompression bonded to the semiconductor element with the edge of the hard insulating jig,
Next, the hard insulating jig is moved over the external terminal to which the semiconductor element is to be connected, the conductive jig is lowered relatively, and the conductive jig is energized with the hard insulating jig retracted upward to connect. A semiconductor internal connection method characterized by crimping a conductive wire to an external terminal with the edge of a conductive jig and performing electric spot welding.
JP8385778A 1978-07-10 1978-07-10 Semiconductor inner connection method Granted JPS5511344A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8385778A JPS5511344A (en) 1978-07-10 1978-07-10 Semiconductor inner connection method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8385778A JPS5511344A (en) 1978-07-10 1978-07-10 Semiconductor inner connection method

Publications (2)

Publication Number Publication Date
JPS5511344A JPS5511344A (en) 1980-01-26
JPS6120135B2 true JPS6120135B2 (en) 1986-05-21

Family

ID=13814348

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8385778A Granted JPS5511344A (en) 1978-07-10 1978-07-10 Semiconductor inner connection method

Country Status (1)

Country Link
JP (1) JPS5511344A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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DE102020114642A1 (en) * 2020-06-02 2021-12-02 Hesse Gmbh Bonding device and operating method therefor

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