JP2013038257A - Wire bonding device and semiconductor device manufacturing method - Google Patents

Wire bonding device and semiconductor device manufacturing method Download PDF

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JP2013038257A
JP2013038257A JP2011173845A JP2011173845A JP2013038257A JP 2013038257 A JP2013038257 A JP 2013038257A JP 2011173845 A JP2011173845 A JP 2011173845A JP 2011173845 A JP2011173845 A JP 2011173845A JP 2013038257 A JP2013038257 A JP 2013038257A
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wire
capillary
bonding
pad
clamper
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Yuichi Sano
雄一 佐野
Naoto Takebe
直人 武部
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Toshiba Corp
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Toshiba Corp
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Priority to TW101105359A priority patent/TW201308458A/en
Priority to CN201210055038XA priority patent/CN102931106A/en
Publication of JP2013038257A publication Critical patent/JP2013038257A/en
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
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  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To decrease a loop height when performing wire bonding.SOLUTION: A wire bonding device of the present embodiment comprises: a capillary; a bonding stage; a movement mechanism relatively displacing the capillary with respect to the bonding stage; and a control part controlling the movement mechanism. The control part performs first bonding of a wire inserted into the capillary with a first pad by the capillary and contact the wire by the capillary with a part near the second pad on a top face of the substrate on which the second pad is provided, and depress and deform the wire by the capillary to form a connection part for bonding. Further, the control part controls the movement mechanism so as to bond the connection part of the wire to the second pad.

Description

本発明の実施形態は、ワイヤボンディング装置および半導体装置の製造方法に関する。   FIELD Embodiments described herein relate generally to a wire bonding apparatus and a semiconductor device manufacturing method.

回路基板上に半導体チップを接着し、半導体チップの上面に設けられた電極パッドと、回路基板の上面に設けられたボンディングパッドとを、ワイヤボンディングにより接続する構成が知られている。この構成の場合、キャピラリから下方へ突出されたワイヤの先端にボールを形成し、このボールを半導体チップの電極パッド上に当接させることによりボンディング（１ｓｔボンディング）する。次に、キャピラリからワイヤを繰り出しながら、キャピラリを上昇させ、更に、横方向へ移動させて回路基板のボンディングパッドの真上に位置させた後、下降させ、ワイヤをボンディングパッド上に当接させると共に該ワイヤに対してキャピラリを介して荷重と超音波、回路基板側に設けられたヒーターを介して熱を加えることによりボンディング（２ｎｄボンディング）する。   There is known a configuration in which a semiconductor chip is bonded on a circuit board, and electrode pads provided on the upper surface of the semiconductor chip and bonding pads provided on the upper surface of the circuit board are connected by wire bonding. In the case of this configuration, a ball is formed at the tip of the wire protruding downward from the capillary, and bonding is performed by bringing the ball into contact with the electrode pad of the semiconductor chip (first bonding). Next, while pulling out the wire from the capillary, the capillary is raised, moved further in the lateral direction, positioned right above the bonding pad on the circuit board, and then lowered to bring the wire into contact with the bonding pad. Bonding (2nd bonding) is performed by applying a load, an ultrasonic wave, and heat to the wire via a capillary and a heater provided on the circuit board side.

上記構成の場合、半導体チップの電極パッドおよび回路基板のボンディングパッドにボンディングされたワイヤのループ部分の形状は、ほぼ山形となる。このワイヤのループ部分の高さ、即ち、半導体チップの電極パッドの上面から上記ループ部分の最も高い部分までの高さを、ループ高さと定義する。近年、上記ループ高さを低くすることが要望されている。   In the case of the above configuration, the shape of the loop portion of the wire bonded to the electrode pad of the semiconductor chip and the bonding pad of the circuit board is substantially a mountain shape. The height of the loop portion of the wire, that is, the height from the upper surface of the electrode pad of the semiconductor chip to the highest portion of the loop portion is defined as the loop height. In recent years, it has been desired to reduce the loop height.

しかし、上記したワイヤボンディングを実行する場合、２ｎｄボンディングの際に、回路基板のボンディングパッド上にワイヤを当接させてボンディングしようとするときに、キャピラリからワイヤが若干下方へ垂れているため、回路基板のボンディングパッド上に当接する前に上記垂れているワイヤが回路基板の表面に接触してしまう。この接触により、応力が生じてワイヤが跳ね上がるため、上記ループ高さが高くなってしまうという不具合があった。例えば、ループ高さを４０〜５０μｍ程度に設定したい場合に、上記ワイヤの跳ね上がりにより、ループ高さが１０％程度高くなっていた。   However, when performing the above-described wire bonding, when the wire is brought into contact with the bonding pad of the circuit board in the 2nd bonding, the wire hangs down slightly from the capillary. Before the abutting on the bonding pad of the substrate, the hanging wire comes into contact with the surface of the circuit substrate. Due to this contact, stress is generated and the wire jumps up, so that the loop height is increased. For example, when it is desired to set the loop height to about 40 to 50 μm, the loop height is increased by about 10% due to the jumping of the wire.

特開２００７−１３４６１１号公報JP 2007-134611 A

そこで、ワイヤボンディングを実行したときに、ループ高さを低くすることができるワイヤボンディング装置および半導体装置の製造方法を提供する。   Therefore, a wire bonding apparatus and a method for manufacturing a semiconductor device that can reduce the loop height when wire bonding is performed are provided.

本実施形態のワイヤボンディング装置は、キャピラリと、ボンディングステージと、前記ボンディングステージに対して前記キャピラリを相対移動させる移動機構と、前記移動機構を制御する制御部とを有する。前記制御部は、キャピラリに挿通されたワイヤを、前記キャピラリにより第１のパッドに１回目のボンディングを行い、第２のパッドが設けられた基板の上面における前記第２のパッドに近い部位に前記ワイヤを前記キャピラリにより接触させて押圧変形させることによりボンディング用の接続部を形成する。そして、前記制御部は、前記ワイヤの接続部を前記第２のパッドにボンディングする様に、前記移動機構を制御することを特徴とする。   The wire bonding apparatus of this embodiment includes a capillary, a bonding stage, a moving mechanism that moves the capillary relative to the bonding stage, and a control unit that controls the moving mechanism. The control unit performs the first bonding of the wire inserted into the capillary to the first pad by the capillary, and closes the wire to a portion near the second pad on the upper surface of the substrate on which the second pad is provided. A connecting portion for bonding is formed by bringing the wire into contact with the capillary and causing pressure deformation. The control unit controls the moving mechanism so as to bond the connecting portion of the wire to the second pad.

本実施形態の半導体装置の製造方法は、キャピラリに挿通されたワイヤを、前記キャピラリにより、回路基板に設けられた半導体チップの電極パッドに１回目のボンディングを行う。そして、ボンディングパッドが設けられた前記回路基板の上面における前記ボンディングパッドに近い部位に前記ワイヤを前記キャピラリにより接触させて押圧変形させることによりボンディング用の接続部を形成する。更に、前記ワイヤの接続部を前記ボンディングパッドにボンディングすることを特徴とする。   In the method of manufacturing a semiconductor device according to the present embodiment, the wire inserted through the capillary is bonded to the electrode pad of the semiconductor chip provided on the circuit board for the first time by the capillary. Then, a bonding connection portion is formed by bringing the wire into contact with the capillary at a portion near the bonding pad on the upper surface of the circuit board on which the bonding pad is provided, and pressing and deforming the wire. Furthermore, the connecting portion of the wire is bonded to the bonding pad.

第１実施形態を示すワイヤボンディング方法を説明する縦断側面図（その１）1 is a longitudinal side view for explaining a wire bonding method according to a first embodiment. ワイヤボンディング方法を説明する縦断側面図（その２）Vertical side view explaining the wire bonding method (Part 2) ワイヤボンディング方法を説明する縦断側面図（その３）Vertical side view explaining the wire bonding method (Part 3) ワイヤを回路基板上に接触させた状態を示す拡大縦断側面図Enlarged longitudinal side view showing a state where the wire is brought into contact with the circuit board ワイヤボンディング方法を説明する縦断側面図（その４）Vertical side view explaining the wire bonding method (Part 4) ワイヤボンディング方法を説明する縦断側面図（その５）Vertical side view explaining the wire bonding method (Part 5) ワイヤボンディング方法を説明する縦断側面図（その６）Vertical side view explaining the wire bonding method (Part 6) ワイヤをボンディングパッド上にボンディングさせた状態を示す拡大縦断側面図Enlarged vertical side view showing the wire bonded to the bonding pad ワイヤボンディング方法を説明する縦断側面図（その７）Vertical side view explaining the wire bonding method (Part 7) ワイヤボンディング装置の概略構成を示す図Diagram showing schematic configuration of wire bonding equipment 変形実施形態を示すボンディングパッド周辺の上面図Top view around a bonding pad showing a modified embodiment 異なる変形実施形態を示すもので、ワイヤボンディング方法を説明する縦断側面図A vertical side view illustrating a wire bonding method, showing a different modified embodiment

以下、複数の実施形態について、図面を参照して説明する。尚、各実施形態において、実質的に同一の構成部位には同一の符号を付し、説明を省略する。但し、図面は模式的なものであり、厚みと平面寸法との関係、各層の厚みの比率等は現実のものとは異なる。   Hereinafter, a plurality of embodiments will be described with reference to the drawings. In each embodiment, substantially the same components are assigned the same reference numerals, and description thereof is omitted. However, the drawings are schematic, and the relationship between the thickness and the planar dimensions, the ratio of the thickness of each layer, and the like are different from the actual ones.

（第１実施形態）
本実施形態のワイヤボンディング装置について、図１ないし図１０を参照して説明する。 (First embodiment)
The wire bonding apparatus of this embodiment is demonstrated with reference to FIG. 1 thru | or FIG.

まず、ワイヤボンディング装置の構成について、図１０を参照して説明する。ワイヤボンディング装置２１は、ワイヤ８を挿通可能なキャピラリ７と、キャピラリ７を保持するボンディングヘッド２２と、ボンディングヘッド２２を介してキャピラリ７を超音波振動させる超音波ホーン２３と、ボンディングアーム２２ａを介してボンディングヘッド２２を回転させてキャピラリ７を垂直方向（Ｚ軸方向）に移動させるアーム駆動モータ２４と、ボンディング対象の回路基板１が載置されるボンディングステージ２５と、ボンディングヘッド２２を水平方向（ＸＹ軸方向）に移動させるＸＹ移動機構２６と、ワイヤボンディング装置２１を統括的に制御する制御部２７と、を備えている。   First, the configuration of the wire bonding apparatus will be described with reference to FIG. The wire bonding apparatus 21 includes a capillary 7 into which the wire 8 can be inserted, a bonding head 22 that holds the capillary 7, an ultrasonic horn 23 that ultrasonically vibrates the capillary 7 through the bonding head 22, and a bonding arm 22a. The bonding head 22 is rotated to move the capillary 7 in the vertical direction (Z-axis direction), the bonding stage 25 on which the circuit board 1 to be bonded is placed, and the bonding head 22 in the horizontal direction ( An XY movement mechanism 26 that moves in the XY axis direction) and a control unit 27 that comprehensively controls the wire bonding apparatus 21 are provided.

超音波ホーン２３は、超音波振動を発生する振動子２３ａを有する。ボンディングステージ２５は、回路基板１に熱を加えて回路基板１の温度を所望の温度に設定するためのヒータ（図示しない）を有する。ＸＹ移動機構２６は、ボンディングヘッド２２をＸ軸方向に移動させるＸ軸リニアモータ２６ａと、ボンディングヘッド２２をＹ軸方向に移動させるＹ軸リニアモータ２６ｂとを有する。この場合、ボンディングアーム２２ａ（アーム駆動モータ２４）およびＸＹ移動機構２６は、移動機構を構成する。   The ultrasonic horn 23 has a vibrator 23a that generates ultrasonic vibration. The bonding stage 25 has a heater (not shown) for applying heat to the circuit board 1 to set the temperature of the circuit board 1 to a desired temperature. The XY moving mechanism 26 includes an X-axis linear motor 26a that moves the bonding head 22 in the X-axis direction, and a Y-axis linear motor 26b that moves the bonding head 22 in the Y-axis direction. In this case, the bonding arm 22a (arm drive motor 24) and the XY moving mechanism 26 constitute a moving mechanism.

制御部２７は、超音波ホーン２３、アーム駆動モータ２４、ＸＹ移動機構２６、ボンディングステージ２５のヒータを制御してワイヤボンディングを行わせるものである。制御部２７は、作業者からの各種制御情報の入力を受け付ける入力部２８と、制御部２７の各種制御情報を表示する出力部２９と、各種プログラムが格納されるメモリ３０と、ボンディング制御を行うＣＰＵ３１と、が設けられている。ＣＰＵ３１は、メモリ３０より読み込まれたプログラムを実行し、超音波ホーンＩ／Ｆ３２、アーム駆動モータＩ／Ｆ３３、Ｘ軸リニアモータＩ／Ｆ３４、Ｙ軸リニアモータＩ／Ｆ３５およびヒータＩ／Ｆ３６を介して超音波ホーン２３、アーム駆動モータ２４、Ｘ軸リニアモータ２６ａ、Ｙ軸リニアモータ２６ｂおよびボンディングステージ２５のヒータの各動作を制御する。後述するボンディング方法は、このプログラムによって制御されたキャピラリ７を含むボンディング装置１の加工点を制御することにより実現する。   The control unit 27 controls the ultrasonic horn 23, the arm drive motor 24, the XY moving mechanism 26, and the heater of the bonding stage 25 to perform wire bonding. The control unit 27 performs bonding control with an input unit 28 that receives input of various control information from an operator, an output unit 29 that displays various control information of the control unit 27, a memory 30 that stores various programs, and the like. CPU 31 is provided. The CPU 31 executes the program read from the memory 30 and passes through the ultrasonic horn I / F 32, the arm drive motor I / F 33, the X-axis linear motor I / F 34, the Y-axis linear motor I / F 35, and the heater I / F 36. The operation of the heater of the ultrasonic horn 23, the arm drive motor 24, the X-axis linear motor 26a, the Y-axis linear motor 26b, and the bonding stage 25 is controlled. The bonding method to be described later is realized by controlling the processing points of the bonding apparatus 1 including the capillary 7 controlled by this program.

さて、図１に示すように、回路基板１の上面には、半導体チップ２が半導体チップ実装用接着剤３を介して接着されていると共に、ボンディングパッド（第２のパッド）４が設けられている。半導体チップ２の上面には、電極パッド（第１のパッド）５が設けられている。半導体チップ２の上面には保護絶縁膜１５が設けられている。保護絶縁膜１５は、例えばポリイミドを用いる。保護絶縁膜１５には電極パッド５が露出するように開口部が設けられている。電極パッド５は、例えばＡｌとＣｕとの合金、またはＡｌとＳｉ、Ｃｕとの合金を用いる。電極パッド５の上面の高さは、保護絶縁膜１５の上面の高さよりも低くなるように構成されている。   As shown in FIG. 1, the semiconductor chip 2 is bonded to the upper surface of the circuit board 1 via a semiconductor chip mounting adhesive 3, and a bonding pad (second pad) 4 is provided. Yes. An electrode pad (first pad) 5 is provided on the upper surface of the semiconductor chip 2. A protective insulating film 15 is provided on the upper surface of the semiconductor chip 2. For example, polyimide is used for the protective insulating film 15. The protective insulating film 15 is provided with an opening so that the electrode pad 5 is exposed. The electrode pad 5 is made of, for example, an alloy of Al and Cu, or an alloy of Al, Si, and Cu. The height of the upper surface of the electrode pad 5 is configured to be lower than the height of the upper surface of the protective insulating film 15.

また、回路基板１は、例えばガラスエポキシ基板を用いる。回路基板１の上面のうちのボンディングパッド４を除く部分は、レジスト膜６で覆われている。ボンディングパッド４は、例えばＣｕを用い、その表面には例えばＡｕの薄膜が形成されている。また、ボンディングパッド４の上面の高さは、レジスト膜６の上面の高さよりも低くなるように構成されている。   The circuit board 1 uses a glass epoxy board, for example. A portion of the upper surface of the circuit board 1 excluding the bonding pads 4 is covered with a resist film 6. The bonding pad 4 is made of Cu, for example, and a thin film of Au, for example, is formed on the surface thereof. Further, the height of the upper surface of the bonding pad 4 is configured to be lower than the height of the upper surface of the resist film 6.

キャピラリ７には、例えば金線等からなるワイヤ８が挿通されている。キャピラリ７の上方には、ワイヤ８を自由に繰り出し可能にする状態（開いた状態）とワイヤ８の繰り出しを阻止する状態（閉じた状態）とを切り替えるクランパ（図示しない）が設けられている。クランパの開閉動作は、前記制御部２７により制御される構成となっている。キャピラリ７は、前記ボンディングヘッド２２に支持されており、前述したように、上下方向（Ｚ軸方向）に移動可能に設けられていると共に、水平方向（ＸＹ軸方向）に移動可能に設けられている。   A wire 8 made of, for example, a gold wire is inserted through the capillary 7. Above the capillary 7, a clamper (not shown) is provided for switching between a state in which the wire 8 can be freely drawn out (open state) and a state in which the wire 8 is prevented from being drawn out (closed state). The opening / closing operation of the clamper is controlled by the control unit 27. The capillary 7 is supported by the bonding head 22 and is provided so as to be movable in the vertical direction (Z-axis direction) and is movable in the horizontal direction (XY-axis direction) as described above. Yes.

また、ワイヤボンディング装置２１には、キャピラリ７の下端部から下方へ突出したワイヤ８の先端部にボンディング用のボール９を形成するための火花放電を発生させる火花放電発生装置（図示しない）が備わっている。火花放電発生装置は、前記制御部２７により駆動制御される構成となっている。   The wire bonding apparatus 21 includes a spark discharge generator (not shown) that generates a spark discharge for forming a bonding ball 9 at the tip of the wire 8 protruding downward from the lower end of the capillary 7. ing. The spark discharge generator is driven and controlled by the control unit 27.

次に、上記構成のワイヤボンディング装置２１により、半導体チップ２の上面の電極パッド５と、回路基板１の上面のボンディングパッド４とをワイヤボンディングして接続する方法（工程）について説明する。   Next, a method (process) of wire bonding the electrode pad 5 on the upper surface of the semiconductor chip 2 and the bonding pad 4 on the upper surface of the circuit board 1 by the wire bonding apparatus 21 having the above configuration will be described.

まず、図１に示すように、半導体チップ２の電極パッド５上にワイヤ８を周知の方法で１回目のボンディング（１ｓｔボンディング）を行う。この場合、例えば、クランパを閉じた状態でキャピラリ７の下端部から延びているワイヤ８の先端部に火花放電によりボール９を形成し、次に、クランパを開いた状態で、キャピラリ７を電極パッド５の上方に移動させた後、下降させて、上記ボール９を電極パッド５上にボンディングする。このボンディング時には、回路基板１を介して熱を加える。   First, as shown in FIG. 1, a first bonding (1st bonding) is performed on the electrode pad 5 of the semiconductor chip 2 by a well-known method. In this case, for example, the ball 9 is formed by spark discharge at the tip of the wire 8 extending from the lower end of the capillary 7 with the clamper closed, and then the capillary 7 is connected to the electrode pad with the clamper opened. Then, the ball 9 is lowered and bonded to the electrode pad 5. At the time of bonding, heat is applied through the circuit board 1.

この後、図１に示すように、クランパを開いた状態で、キャピラリ７を上昇させた後、回路基板１の上面におけるボンディングパッド４に近い部分であってキャピラリ７を仮に接触させて押圧する仮接触部分１０の上方（真上）に移動させる。続いて、図２および図３に示すように、クランパを開いた状態で、キャピラリ７を下降させて、ワイヤ８を上記仮接触部分１０上に接触（当接）させて押圧する。この接触時には、キャピラリ７を介して押圧力、回路基板１を介して熱を加える。これにより、図４に示すように、キャピラリ７の下端部のキャピラリフェイス部７ａによりワイヤ８が加圧変形されて接続部１１が形成される。この場合、キャピラリ７のキャピラリフェイス部７ａと回路基板１（レジスト膜６）の上面との間にワイヤ８を挟んで押圧変形させることにより、接続部１１を形成する。   Thereafter, as shown in FIG. 1, after the capillary 7 is lifted with the clamper opened, the capillary 7 is temporarily brought into contact with and pressed against the bonding pad 4 on the upper surface of the circuit board 1. Move to above (directly above) the contact portion 10. Subsequently, as shown in FIGS. 2 and 3, with the clamper opened, the capillary 7 is lowered and the wire 8 is brought into contact (contact) with the temporary contact portion 10 and pressed. At the time of this contact, pressing force is applied through the capillary 7 and heat is applied through the circuit board 1. Thereby, as shown in FIG. 4, the wire 8 is pressurized and deformed by the capillary face portion 7 a at the lower end portion of the capillary 7 to form the connection portion 11. In this case, the connecting portion 11 is formed by pressing and deforming the wire 8 between the capillary face portion 7a of the capillary 7 and the upper surface of the circuit board 1 (resist film 6).

次に、図５に示すように、クランパを開いた状態で、キャピラリ７を上昇させた後、図６に示すように、クランパを開いた状態で、キャピラリ７をボンディングパッド４の上方（真上）に水平移動させる。続いて、図７に示すように、クランパを開いた状態で、キャピラリ７を下降させて、上記ボンディングパッド４上に当接させて押圧する。この当接する際には、クランパを開いた状態にし、キャピラリ７を介して押圧力及び超音波、回路基板１を介して熱を加える。これにより、図８に示すように、キャピラリ７の下端部のキャピラリフェイス部７ａによりワイヤ８の接続部１１がボンディングパッド４上にボンディングされる、即ち、２回目のボンディング（２ｎｄボンディング）が行われる。この後、クランパを閉じた状態で、キャピラリ７を上昇させると、図９に示すように、ワイヤ８は、ボンディングパッド４にボンディングされた接続部１１部分（薄肉部分）で切断される。   Next, as shown in FIG. 5, after the capillary 7 is lifted with the clamper open, the capillary 7 is placed above the bonding pad 4 (directly above) with the clamper open as shown in FIG. ) Horizontally. Subsequently, as shown in FIG. 7, with the clamper opened, the capillary 7 is lowered and brought into contact with the bonding pad 4 and pressed. At the time of this contact, the clamper is opened, and a pressing force and ultrasonic waves are applied via the capillary 7 and heat is applied via the circuit board 1. As a result, as shown in FIG. 8, the connection portion 11 of the wire 8 is bonded onto the bonding pad 4 by the capillary face portion 7a at the lower end portion of the capillary 7, that is, the second bonding (2nd bonding) is performed. . Thereafter, when the capillary 7 is raised with the clamper closed, as shown in FIG. 9, the wire 8 is cut at the connecting portion 11 portion (thin portion) bonded to the bonding pad 4.

上記した構成の本実施形態によれば、回路基板１のボンディングパッド４上にワイヤボンディングする前に、回路基板１の仮接触部分１０上にキャピラリ７によりワイヤ８を接触させて押圧変形させて、ワイヤ８の接続部１１を形成した。この場合、上記接続部１１を形成する際には、図１及び図２に示すように、キャピラリ７からワイヤ８が若干下方へ垂れているため、回路基板１の仮接触部分１０上に接触する前に上記垂れているワイヤ８が回路基板１の表面に接触してしまう。この接触により、応力が生じてワイヤ８が跳ね上がるため、ワイヤ８のループ高さｈが高くなってしまう（図３参照）。   According to this embodiment having the above-described configuration, before wire bonding on the bonding pad 4 of the circuit board 1, the wire 8 is brought into contact with the temporary contact portion 10 of the circuit board 1 by the capillary 7 and is pressed and deformed. A connecting portion 11 of the wire 8 was formed. In this case, when the connection portion 11 is formed, as shown in FIGS. 1 and 2, the wire 8 slightly hangs downward from the capillary 7, so that it contacts the temporary contact portion 10 of the circuit board 1. The wire 8 that hangs down before comes into contact with the surface of the circuit board 1. Due to this contact, stress is generated and the wire 8 jumps up, so that the loop height h of the wire 8 is increased (see FIG. 3).

この後、回路基板１のボンディングパッド４上にワイヤボンディングするために、図５、図６、図７に示すように、キャピラリ７を上昇させ、ボンディングパッド４の上方（真上）に移動させ、更に、下降させて、ワイヤ８の接続部１１を上記ボンディングパッド４上に当接させて押圧し、接続部１１をボンディングパッド４にボンディングする。この場合、キャピラリ７のキャピラリフェイス部７ａにワイヤ８の接続部１１が当接した状態で、キャピラリ７が上述したように移動するため、ワイヤ８が引っぱられてワイヤ８のループ高さｈが低くなる。   Thereafter, in order to perform wire bonding on the bonding pad 4 of the circuit board 1, as shown in FIGS. 5, 6, and 7, the capillary 7 is raised and moved above (directly above) the bonding pad 4, Further, the connection portion 11 of the wire 8 is brought into contact with and pressed against the bonding pad 4 to bond the connection portion 11 to the bonding pad 4. In this case, since the capillary 7 moves as described above in a state where the connection portion 11 of the wire 8 is in contact with the capillary face portion 7a of the capillary 7, the wire 8 is pulled and the loop height h of the wire 8 is lowered. Become.

更に、ワイヤ８の接続部１１をボンディングパッド４にボンディングする際に、キャピラリ７のキャピラリフェイス部７ａにワイヤ８の接続部１１が当接した状態であって、ワイヤ８がキャピラリ７の下端部から垂れていないため、ワイヤ８が回路基板１の表面に接触することがなくなる。このため、応力が生じ難く、ワイヤ８が跳ね上がることが少なくなるから、ワイヤ８のループ高さｈを低い状態のまま保持することができる（図７参照）。例えば、ワイヤ８のループ高さを４０〜５０μｍ程度に設定したい場合に、ワイヤ８の跳ね上がりが少なくなるので、ループ高さを上記４０〜５０μｍ程度にほぼ正確に設定することが可能となる。   Further, when the connection portion 11 of the wire 8 is bonded to the bonding pad 4, the connection portion 11 of the wire 8 is in contact with the capillary face portion 7 a of the capillary 7, and the wire 8 is connected from the lower end portion of the capillary 7. Since it does not sag, the wire 8 does not contact the surface of the circuit board 1. For this reason, stress hardly occurs and the wire 8 is less likely to jump up, so that the loop height h of the wire 8 can be kept low (see FIG. 7). For example, when it is desired to set the loop height of the wire 8 to about 40 to 50 μm, the jump of the wire 8 is reduced, so that the loop height can be set to about 40 to 50 μm almost accurately.

また、上記実施形態の場合、キャピラリ７によりワイヤ８を回路基板１の上面に仮に接触させる位置、即ち、仮接触部分１０の位置は、図１ないし図３に示すように、ボンディングパッド４に近い部位であって半導体チップ２の電極パッド５側（図３中の左方）の部位であるが、この部位に限られるものではない。   In the case of the above embodiment, the position at which the wire 8 is temporarily brought into contact with the upper surface of the circuit board 1 by the capillary 7, that is, the position of the temporary contact portion 10 is close to the bonding pad 4 as shown in FIGS. Although it is a site | part and the site | part on the electrode pad 5 side (left side in FIG. 3) of the semiconductor chip 2, it is not restricted to this site.

例えば、変形実施形態を示す図１１において、回路基板１のボンディングパッド４の右端よりも右側（即ち、半導体チップ２の電極パッド５側）の領域に、具体的には、図１１中の１点鎖線Ｐよりも右側の領域に、上記仮接触部分１０を配置すれば良い。好ましくは、上記１点鎖線Ｐよりも右側の領域（矢印で示す範囲の領域）におけるボンディングパッド４に近い部位に、上記仮接触部分１０を配置することが良い。   For example, in FIG. 11 showing the modified embodiment, in the region on the right side of the bonding pad 4 of the circuit board 1 (that is, on the electrode pad 5 side of the semiconductor chip 2), specifically, one point in FIG. The temporary contact portion 10 may be disposed in a region on the right side of the chain line P. Preferably, the temporary contact portion 10 is arranged in a region near the bonding pad 4 in a region on the right side of the one-dot chain line P (region indicated by an arrow).

（その他の実施形態）
以上説明した複数の実施形態に加えて以下のような構成を採用しても良い。
上記実施形態では、回路基板１の仮接触部分１０上にキャピラリ７によりワイヤ８を接触させて押圧変形させて、ワイヤ８の接続部１１を形成した後も、クランパを開いた状態のままで、キャピラリ７を上昇、移動及び下降、押圧させたが、これに代えて、ワイヤ８の接続部１１を形成した後は、クランパを閉じ、クランパを閉じた状態で、キャピラリ７を上昇、移動及び下降、押圧させても良い。このように構成すると、キャピラリ７の移動時にワイヤ８の送り出しがなくなるから、ワイヤ８のループ高さｈをより一層確実に低くすることができる。 (Other embodiments)
In addition to the plurality of embodiments described above, the following configurations may be adopted.
In the above embodiment, after the wire 8 is brought into contact with the capillary 7 on the temporary contact portion 10 of the circuit board 1 and pressed and deformed to form the connection portion 11 of the wire 8, the clamper is kept open, The capillary 7 is raised, moved, lowered and pressed. Instead, after the connection portion 11 of the wire 8 is formed, the clamper is closed and the capillary 7 is lifted, moved and lowered with the clamper closed. , It may be pressed. With this configuration, since the wire 8 is not sent out when the capillary 7 is moved, the loop height h of the wire 8 can be further reliably reduced.

また、上記実施形態では、回路基板１のボンディングパッド４上にワイヤ８を２ｎｄボンディングする際に、そのボンディング前に、キャピラリ７を下降させてワイヤ８を回路基板１の仮接触部分１０上に接触させて押圧する。これに代えて、半導体チップ２の電極パッド５上にワイヤ８を２ｎｄボンディングする際に、上記ワイヤ８の仮接触を実行しても良い。具体的には、回路基板１のボンディングパッド４上にワイヤ８を１ｓｔボンディングした後、半導体チップ２の電極パッド５上にワイヤ８を２ｎｄボンディングする前に、キャピラリ７によってワイヤ８を半導体チップ２の上面の保護絶縁膜１５上における電極パッド５に近い部分である仮接触部分上に接触（当接）させて押圧変形させる。これにより、キャピラリ７のキャピラリフェイス部７ａによりワイヤ８が加圧変形されて接続部が形成される。この後、そのワイヤ８の接続部を半導体チップ２の電極パッド５上にボンディングする。この構成によれば、応力によるワイヤ８の跳ね上がりが生じないから、安定して低いループ高さを設定することが可能である。   In the above embodiment, when the wire 8 is bonded to the bonding pad 4 of the circuit board 1 by 2nd bonding, the capillary 7 is lowered before the bonding to bring the wire 8 into contact with the temporary contact portion 10 of the circuit board 1. And press. Alternatively, the wire 8 may be temporarily contacted when the wire 8 is bonded to the electrode pad 5 of the semiconductor chip 2 by 2nd bonding. Specifically, after the first bonding of the wire 8 on the bonding pad 4 of the circuit board 1 and before the second bonding of the wire 8 on the electrode pad 5 of the semiconductor chip 2, the wire 8 is connected to the semiconductor chip 2 by the capillary 7. It is brought into contact (contact) with a temporary contact portion that is a portion close to the electrode pad 5 on the upper surface of the protective insulating film 15 to be deformed by pressing. As a result, the wire 8 is pressurized and deformed by the capillary face portion 7a of the capillary 7 to form a connection portion. Thereafter, the connecting portion of the wire 8 is bonded onto the electrode pad 5 of the semiconductor chip 2. According to this configuration, since the wire 8 does not spring up due to stress, it is possible to stably set a low loop height.

また、半導体チップ２の電極パッド５上にワイヤ８を２ｎｄボンディングする際、電極パッド５上に直接ワイヤ８を２ｎｄボンディングする他、変形実施形態を示す図１２に示すように、電極パッド５上に設けられたバンプ３７を介して２ｎｄボンディングしても良い。   Further, when the wire 8 is 2nd bonded on the electrode pad 5 of the semiconductor chip 2, the wire 8 is directly bonded on the electrode pad 5 by 2nd bonding, and as shown in FIG. You may bond 2nd through the bump 37 provided.

本発明のいくつかの実施形態を説明したが、これらの実施形態は、例として提示したものであり、発明の範囲を限定することは意図していない。これら新規な実施形態は、その他の様々な形態で実施されることが可能であり、発明の要旨を逸脱しない範囲で、種々の省略、置き換え、変更を行うことができる。これら実施形態やその変形は、発明の範囲や要旨に含まれるとともに、特許請求の範囲に記載された発明とその均等の範囲に含まれる。   Although several embodiments of the present invention have been described, these embodiments are presented by way of example and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

図面中、１は回路基板、２は半導体チップ、ボンディングパッド、５は電極パッド、７はキャピラリ、８はワイヤ、９はボール、１０は仮接触部分，１１は接続部、２４はアーム駆動モータ、２５はボンディングステージ、２６はＸＹ移動機構、２７は制御部である。   In the drawings, 1 is a circuit board, 2 is a semiconductor chip, bonding pad, 5 is an electrode pad, 7 is a capillary, 8 is a wire, 9 is a ball, 10 is a temporary contact portion, 11 is a connection portion, 24 is an arm drive motor, Reference numeral 25 denotes a bonding stage, 26 denotes an XY moving mechanism, and 27 denotes a control unit.

Claims (7)

キャピラリと、キャピラリを保持するボンディングヘッドと、ボンディングステージと、前記ボンディングステージに対して前記キャピラリを相対移動させる移動機構と、前記キャピラリを超音波振動させる超音波ホーンと、開閉可能に設けられ、開いた状態で前記キャピラリに挿通されたワイヤの送り出しを可能とし、閉じた状態で前記ワイヤの送り出しを不可とするクランパと、前記移動機構、前記超音波ホーンおよび前記クランパを制御する制御部と、を有し、
前記制御部は、前記キャピラリに挿通されたワイヤを、前記キャピラリにより第１のパッドに１回目のボンディングを行い、
第２のパッドが設けられた基板の上面における前記第２のパッドに近い部位に前記ワイヤを前記キャピラリにより接触させて押圧変形させることによりボンディング用の接続部を形成し、
前記ワイヤの接続部を前記第２のパッドにボンディングする様に、前記移動機構を制御するものであって、
前記制御部は、前記ワイヤの接続部を形成する際に、前記キャピラリの下端部のキャピラリフェイス部と前記基板の上面との間に前記ワイヤを挟んで押圧変形させる様に、前記移動機構を制御し、更に、
前記ボンディング用の接続部を形成する際には、前記クランパを開いた状態にして行い、この後、前記クランパを閉じた状態にして、前記キャピラリを上昇させ、前記キャピラリを前記第２のパッドの上方まで移動させ、前記キャピラリを下降させて前記ワイヤの接続部を前記第２のパッドに当接させ、そして、前記ワイヤの接続部を前記第２のパッドにボンディングする様に、前記移動機構と前記クランパを制御する、
ことを特徴とするワイヤボンディング装置。 A capillary, a bonding head that holds the capillary, a bonding stage, a moving mechanism that moves the capillary relative to the bonding stage, an ultrasonic horn that ultrasonically vibrates the capillary, and are openable and open. A clamper that enables the wire inserted into the capillary in a closed state and disables the wire in a closed state, and a control unit that controls the moving mechanism, the ultrasonic horn, and the clamper. Have
The controller performs the first bonding of the wire inserted through the capillary to the first pad by the capillary,
Forming a bonding connecting portion by pressing and deforming the wire in contact with the capillary at a portion near the second pad on the upper surface of the substrate provided with the second pad;
The moving mechanism is controlled so as to bond the connecting portion of the wire to the second pad,
The control unit controls the moving mechanism so as to press and deform the wire between the capillary face portion at the lower end of the capillary and the upper surface of the substrate when forming the connection portion of the wire. In addition,
When forming the bonding connection portion, the clamper is opened, and then the clamper is closed, the capillary is raised, and the capillary is moved to the second pad. Moving the upper part, lowering the capillary to bring the wire connection part into contact with the second pad, and bonding the wire connection part to the second pad; Controlling the clamper;
The wire bonding apparatus characterized by the above-mentioned. キャピラリと、ボンディングステージと、前記ボンディングステージに対して前記キャピラリを相対移動させる移動機構と、前記移動機構を制御する制御部とを有し、
前記制御部は、キャピラリに挿通されたワイヤを、前記キャピラリにより第１のパッドに１回目のボンディングを行い、
第２のパッドが設けられた基板の上面における前記第２のパッドに近い部位に前記ワイヤを前記キャピラリにより接触させて押圧変形させることによりボンディング用の接続部を形成し、
前記ワイヤの接続部を前記第２のパッドにボンディングする様に、前記移動機構を制御する
ことを特徴とするワイヤボンディング装置。 A capillary, a bonding stage, a moving mechanism for moving the capillary relative to the bonding stage, and a controller for controlling the moving mechanism,
The controller performs the first bonding of the wire inserted into the capillary to the first pad by the capillary,
Forming a bonding connecting portion by pressing and deforming the wire in contact with the capillary at a portion near the second pad on the upper surface of the substrate provided with the second pad;
The wire bonding apparatus characterized in that the moving mechanism is controlled so that the wire connecting portion is bonded to the second pad. 前記制御部は、前記ワイヤの接続部を形成するに際して、前記キャピラリの下端部のキャピラリフェイス部と前記基板の上面との間に前記ワイヤを挟んで押圧変形させる様に、前記移動機構を制御することを特徴とする請求項２記載のワイヤボンディング装置。   The control unit controls the moving mechanism so as to press and deform the wire between the capillary face portion at the lower end of the capillary and the upper surface of the substrate when forming the connection portion of the wire. The wire bonding apparatus according to claim 2. 開閉可能に設けられ、開いた状態で前記キャピラリに挿通された前記ワイヤの送り出しを可能とし、閉じた状態で前記ワイヤの送り出しを不可とするクランパを備え、
前記制御部は、前記ボンディング用の接続部を形成する際には、前記クランパを開いた状態にして行い、この後、前記クランパを開いた状態のままで、前記キャピラリを上昇させ、前記キャピラリを前記第２のパッドの上方まで移動させ、前記キャピラリを下降させて前記ワイヤの接続部を前記第２のパッドに当接させ、そして、前記ワイヤの接続部を前記第２のパッドにボンディング後には、前記クランパを閉じた状態にする様、前記移動機構と前記クランパを制御することを特徴とする請求項２または３記載のワイヤボンディング装置。 Provided with a clamper that can be opened and closed, enables the wire inserted through the capillary in an open state, and disables the wire in a closed state;
When forming the bonding connection portion, the control unit performs the opening of the clamper, and then raises the capillary with the clamper open, After moving to above the second pad, the capillary is lowered to bring the wire connection portion into contact with the second pad, and after the wire connection portion is bonded to the second pad, 4. The wire bonding apparatus according to claim 2, wherein the moving mechanism and the clamper are controlled so that the clamper is closed. 開閉可能に設けられ、開いた状態で前記キャピラリに挿通された前記ワイヤの送り出しを可能とし、閉じた状態で前記ワイヤの送り出しを不可とするクランパを備え、
前記制御部は、前記ボンディング用の接続部を形成する際には、前記クランパを開いた状態にして行い、この後、前記クランパを閉じた状態にして、前記キャピラリを上昇させ、前記キャピラリを前記第２のパッドの上方まで移動させ、前記キャピラリを下降させて前記ワイヤの接続部を前記第２のパッドに当接させ、そして、前記ワイヤの接続部を前記第２のパッドにボンディングする様、前記移動機構と前記クランパを制御することを特徴とする請求項２または３記載のワイヤボンディング装置。 Provided with a clamper that can be opened and closed, enables the wire inserted through the capillary in an open state, and disables the wire in a closed state;
The controller is configured to open the clamper when forming the bonding connection, and then close the clamper to raise the capillary, Moving to above the second pad, lowering the capillary to bring the wire connection into contact with the second pad, and bonding the wire connection to the second pad; 4. The wire bonding apparatus according to claim 2, wherein the moving mechanism and the clamper are controlled. キャピラリと、ボンディングステージと、前記ボンディングステージに対して前記キャピラリを相対移動させる移動機構と、前記移動機構を制御する制御部とを有し、
前記制御部は、キャピラリに挿通されたワイヤを、前記キャピラリにより第１のパッドに１回目のボンディングを行い、
第２のパッドが設けられた半導体チップの上面における前記第２のパッドに近い部位に前記ワイヤを前記キャピラリにより接触させて押圧変形させることによりボンディング用の接続部を形成し、
前記ワイヤの接続部を前記第２のパッドまたは前記第２のパッド上に設けられたバンプにボンディングする様に、前記移動機構を制御する
ことを特徴とするワイヤボンディング装置。 A capillary, a bonding stage, a moving mechanism for moving the capillary relative to the bonding stage, and a controller for controlling the moving mechanism,
The controller performs the first bonding of the wire inserted into the capillary to the first pad by the capillary,
Forming a connecting portion for bonding by bringing the wire into contact with the capillary at a portion close to the second pad on the upper surface of the semiconductor chip provided with the second pad, and pressing and deforming the wire;
The wire bonding apparatus according to claim 1, wherein the moving mechanism is controlled so as to bond the connecting portion of the wire to the second pad or a bump provided on the second pad. キャピラリに挿通されたワイヤを、前記キャピラリにより、回路基板に設けられた半導体チップの電極パッドに１回目のボンディングを行い、
ボンディングパッドが設けられた前記回路基板の上面における前記ボンディングパッドに近い部位に前記ワイヤを前記キャピラリにより接触させて押圧変形させることによりボンディング用の接続部を形成し、
前記ワイヤの接続部を前記ボンディングパッドにボンディングする
ことを特徴とする半導体装置の製造方法。 The wire inserted into the capillary is first bonded to the electrode pad of the semiconductor chip provided on the circuit board by the capillary,
Forming a bonding connecting portion by pressing and deforming the wire in contact with the capillary at a portion near the bonding pad on the upper surface of the circuit board provided with the bonding pad;
A method of manufacturing a semiconductor device, comprising bonding a connecting portion of the wire to the bonding pad.
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