JP2015173205A - Semiconductor device and wire bonding device - Google Patents

Semiconductor device and wire bonding device Download PDF

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JP2015173205A
JP2015173205A JP2014048845A JP2014048845A JP2015173205A JP 2015173205 A JP2015173205 A JP 2015173205A JP 2014048845 A JP2014048845 A JP 2014048845A JP 2014048845 A JP2014048845 A JP 2014048845A JP 2015173205 A JP2015173205 A JP 2015173205A
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bonding
point
wire
connection region
pad
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隆章 赤羽
Takaaki Akabane
隆章 赤羽
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Toshiba Corp
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Toshiba Corp
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Priority to JP2014048845A priority Critical patent/JP2015173205A/en
Priority to TW103125365A priority patent/TWI555103B/en
Priority to CN201410450124.XA priority patent/CN104916609B/en
Publication of JP2015173205A publication Critical patent/JP2015173205A/en
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Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device in which the occurrence of an open circuit and a pad and a short circuit between a wire and a pad is inhibited; and provide a wire bonding device for manufacturing the semiconductor device.SOLUTION: A semiconductor device comprises: a semiconductor chip 10 having bonding pads 12 to be rectangular first connection regions which are arranged in a first direction; and circuit boards 14 having bonding leads 16 to be second connection regions, respectively, which are arranged in the first direction. The first connection regions and the second connection regions are respectively connected by wire bonding by a wedge bonding method. A first bonding point 25 and a second bonding point 26 each having a substantially elliptic shape are arranged in each first connection region in a second direction perpendicular to the first direction. A third bonding point 27 has a substantially elliptic shape and is formed on the second connection region . A longer direction of the first bonding point 25 is oriented to the second direction. When assuming that a direction linking the second bonding point 26 and the third bonding point 27 is a third direction, a longer direction of the second bonding point 26 is oriented to the third direction rather to the second direction.

Description

本発明の実施形態は、半導体装置及びワイヤボンディング装置に関する。   Embodiments described herein relate generally to a semiconductor device and a wire bonding apparatus.

ウェッジボンディング法を用いたワイヤボンディングにおいて、ワイヤをパッド等に接合する際に、半導体チップ上の接合点と回路基板上の接合点の位置関係や、ワイヤを引き回す方向により、パッド間ショートやワイヤのオープンが生じることがある。   In wire bonding using the wedge bonding method, when bonding a wire to a pad or the like, depending on the positional relationship between the bonding point on the semiconductor chip and the bonding point on the circuit board and the direction in which the wire is routed, Opening may occur.

特開2012−15263号公報JP 2012-15263 A

ワイヤ、パッド間のオープン、ショートの発生が抑制された半導体装置、及びこれを製造するワイヤボンディング装置を提供する。   Provided are a semiconductor device in which the occurrence of open and short between wires and pads is suppressed, and a wire bonding apparatus for manufacturing the semiconductor device.

本実施形態に係る半導体装置は、回路基板と、回路基板上に搭載された半導体チップとを有する。半導体チップは、その上面に、長方形を有し、第1の接続領域となるボンディング用パッドを少なくとも二つ以上、その短辺を対面させるように第1の方向に配列している。回路基板は、第2の接続領域となるボンディング用リードを少なくとも二つ以上前記第1の方向に配列している。第1の接続領域と、これに対応する第2の接続領域は、ウェッジボンディング法によるワイヤ接合により、第1の接合点、第2の接合点、及び第3の接合点によって接続されている。第1及び第2の接合点は、略楕円形を有し、第1の接続領域上に、第1の方向に垂直な第2の方向に配列して形成されている。第3の接合点は、略楕円形を有し、第2の接続領域上に形成されている。第1の接合点の長手方向は、第2の方向を向いている。第2の接合点と第3の接合点を結ぶ方向を第3の方向とした場合に、第2の接合点の長手方向は、第2の方向より第3の方向に向けた方向となるように形成されている。   The semiconductor device according to the present embodiment includes a circuit board and a semiconductor chip mounted on the circuit board. The semiconductor chip has a rectangular shape on the upper surface thereof, and is arranged in the first direction so that at least two bonding pads serving as the first connection region face the short sides. In the circuit board, at least two bonding leads to be the second connection region are arranged in the first direction. The first connection region and the second connection region corresponding to the first connection region are connected by the first bonding point, the second bonding point, and the third bonding point by wire bonding by the wedge bonding method. The first and second junction points have a substantially oval shape, and are formed on the first connection region and arranged in a second direction perpendicular to the first direction. The third junction point has a substantially elliptical shape and is formed on the second connection region. The longitudinal direction of the first joint point is in the second direction. When the direction connecting the second junction point and the third junction point is the third direction, the longitudinal direction of the second junction point is the direction from the second direction toward the third direction. Is formed.

本実施形態におけるワイヤボンディング装置の構成図の一例Example of configuration diagram of wire bonding apparatus in this embodiment ワイヤボンディングの概要を模式的に示す平面図の一例An example of a plan view schematically showing the outline of wire bonding (a)〜(c)は、本実施形態におけるワイヤボンディングの手順を、工程順に順を追って説明するための図の一例(A)-(c) is an example of the figure for demonstrating the order of the wire bonding in this embodiment later on in order of a process ウェッジツールの構造を模式的に説明するための縦断面図の一例An example of a longitudinal section for schematically explaining the structure of a wedge tool (a)〜(e)は、本実施形態におけるワイヤボンディングの手順を、工程順に順を追って説明するための図の一例(A)-(e) is an example of the figure for demonstrating the procedure of the wire bonding in this embodiment later on in order of a process ワイヤボンディング方法の手順を示すフローチャートの一例An example of a flowchart showing the procedure of the wire bonding method (a)及び(b)は、パッドに一つの接合点を形成した場合の平面図の一例(A) And (b) is an example of the top view at the time of forming one junction in a pad

以下に、実施形態について図面を参照しつつ説明する。なお、図面は模式的なものであり、厚みと平面寸法との関係、各層の厚みの比率等は現実のものとは必ずしも一致しない。同じ部分を表す場合であっても、図面により互いの寸法や比率が異なって表される場合がある。また、上下左右の方向についても、半導体基板における回路形成面側を上とした場合の相対的な方向を示し、必ずしも重力加速度方向を基準としたものとは一致しない。本願明細書と各図において、既出の図に関して前述したものと同様の要素には同一の符号を付して詳細な説明は適宜省略する。以下の説明において、説明の便宜上、XYZ直交座標系を使用する場合がある。この座標系においては、半導体基板の表面に対して平行な方向であって相互に直交する2方向をX方向およびY方向とし、これらX方向およびY方向の双方に対して直交する方向をZ方向とする。また、ボンディング装置においては、ステージ移動面に平行な方向であって、相互に直交する2方向をX方向及びY方向とし、これらX方向及びY方向の双方に対して垂直な方向をZ方向とする。   Hereinafter, embodiments will be described with reference to the drawings. The drawings are schematic, and the relationship between the thickness and the planar dimensions, the ratio of the thickness of each layer, and the like do not necessarily match those of the actual one. Even when the same part is represented, the dimensions and ratios may be represented differently depending on the drawing. The vertical and horizontal directions also indicate relative directions when the circuit formation surface side of the semiconductor substrate is up, and do not necessarily match the direction based on the gravitational acceleration direction. In the present specification and drawings, the same elements as those described above with reference to the previous drawings are denoted by the same reference numerals, and detailed description thereof is omitted as appropriate. In the following description, for convenience of explanation, an XYZ orthogonal coordinate system may be used. In this coordinate system, two directions parallel to the surface of the semiconductor substrate and perpendicular to each other are defined as an X direction and a Y direction, and a direction perpendicular to both the X direction and the Y direction is defined as a Z direction. And In the bonding apparatus, two directions that are parallel to the stage moving surface and are orthogonal to each other are defined as an X direction and a Y direction, and a direction perpendicular to both the X direction and the Y direction is defined as a Z direction. To do.

(実施形態)
以下に、図1〜図7を参照して、実施形態について説明する。図1は、本実施形態で用いるワイヤボンディング装置50の構成図の一例である。ワイヤボンディング装置50は、ワイヤボンディング用のツールとしてウェッジツール34を用い、ウェッジボンディング方式で、複数のボンディング対象物を繋ぐワイヤボンディングを形成する装置である。本発明の実施の形態において、ウェッジボンディング法とは、ワイヤボンディングの一方法であり、ワイヤ先端にFAB(Free Air Ball)を形成することなく、圧力(圧接)、及び超音波振動によるエネルギを用いて、ワイヤをパッド等に接合するボンディング方式を意味する。
(Embodiment)
Hereinafter, embodiments will be described with reference to FIGS. FIG. 1 is an example of a configuration diagram of a wire bonding apparatus 50 used in the present embodiment. The wire bonding apparatus 50 is an apparatus that uses the wedge tool 34 as a wire bonding tool and forms wire bonding that connects a plurality of bonding objects by a wedge bonding method. In the embodiment of the present invention, the wedge bonding method is one method of wire bonding, and uses pressure (pressure welding) and energy by ultrasonic vibration without forming FAB (Free Air Ball) at the wire tip. This means a bonding method in which a wire is bonded to a pad or the like.

図1に示すように、ワイヤボンディング装置50は、架台52と、架台52上に保持されるボンディングステージ54及びXYステージ56と、コンピュータ100を有している。ボンディングステージ54は、ボンディング対象物である半導体チップ10と回路基板14とを載置するボンディング対象物保持台である。図1は、ボンディング対象物としての半導体チップ10と回路基板14が載置された状態を示されている。   As shown in FIG. 1, the wire bonding apparatus 50 includes a gantry 52, a bonding stage 54 and an XY stage 56 held on the gantry 52, and a computer 100. The bonding stage 54 is a bonding object holding table on which the semiconductor chip 10 as a bonding object and the circuit board 14 are placed. FIG. 1 shows a state in which a semiconductor chip 10 as a bonding object and a circuit board 14 are placed.

ボンディングステージ54は、回路基板14等を載置または排出する際に、架台52に対して移動可能である。ボンディングステージ54は、ボンディング処理の間は架台52に固定される。ボンディングステージ54としては、例えば金属製の移動テーブルを用いることができる。ボンディングステージ54は、例えばワイヤボンディング装置50の接地電位等の基準電位に接続される。半導体チップ10や回路基板14との間の絶縁が必要な場合には、ボンディングステージ54の必要な部分に絶縁処理を施すことができる。   The bonding stage 54 is movable with respect to the gantry 52 when the circuit board 14 or the like is placed or discharged. The bonding stage 54 is fixed to the gantry 52 during the bonding process. For example, a metal moving table can be used as the bonding stage 54. The bonding stage 54 is connected to a reference potential such as the ground potential of the wire bonding apparatus 50, for example. When insulation between the semiconductor chip 10 and the circuit board 14 is necessary, an insulation process can be performed on a necessary portion of the bonding stage 54.

半導体チップ10は、シリコン基板にトランジスタ等を集積化して電子回路としたものである。半導体チップ10上面には、電子回路としての入力端子と出力端子等が複数のパッドとして引き出されている。半導体チップ10下面は、シリコン基板の裏面であり、電子回路の接地電極とされる。   The semiconductor chip 10 is an electronic circuit in which transistors and the like are integrated on a silicon substrate. On the upper surface of the semiconductor chip 10, input terminals and output terminals as electronic circuits are drawn out as a plurality of pads. The lower surface of the semiconductor chip 10 is the back surface of the silicon substrate and serves as a ground electrode for an electronic circuit.

回路基板14は、例えばエポキシ樹脂基板に所望の配線をパターニングしたものである。回路基板14は、半導体チップ10下面を電気的および機械的に接続して固定するチップパッドと、その周囲に配置される複数のリードと、チップパッドや複数のリードから引き出された回路基板としての入力端子と出力端子を有する。ワイヤボンディングは、半導体チップ10上のパッドと、回路基板14上のリードとの間をワイヤで接続することで行われる。   For example, the circuit board 14 is obtained by patterning desired wiring on an epoxy resin substrate. The circuit board 14 is a chip pad for electrically and mechanically connecting and fixing the lower surface of the semiconductor chip 10, a plurality of leads arranged around the chip pad, and a circuit board drawn out from the chip pad and the plurality of leads. It has an input terminal and an output terminal. Wire bonding is performed by connecting a pad on the semiconductor chip 10 and a lead on the circuit board 14 with a wire.

ウィンドクランパ68は、ボンディングステージ54上に設けられている。ウィンドクランパ68は、中央部に開口を有する平板状の部材であり、回路基板14を保持するために用いられる。ウィンドクランパ68は、回路基板14のリードと半導体チップ10と中央部の開口の中に配置されるように位置決めするとともに、開口の周縁部で回路基板14を押さえることで、回路基板14をボンディングステージ54に固定する。   The wind clamper 68 is provided on the bonding stage 54. The wind clamper 68 is a flat plate member having an opening at the center, and is used to hold the circuit board 14. The wind clamper 68 is positioned so as to be disposed in the lead of the circuit board 14 and the semiconductor chip 10 and the central opening, and holds the circuit board 14 at the peripheral edge of the opening, thereby holding the circuit board 14 in the bonding stage. 54 is fixed.

XYステージ56は、ボンディングヘッド58を搭載している。XYステージ56は、ボンディングヘッド58をXY平面内の所望の位置に移動させる移動台である。XY平面は、架台52の上面と平行な平面である。Y方向は、後述するボンディングアーム(図示せず)に取り付けられた超音波トランスデューサ64の長手方向に平行な方向である。   The XY stage 56 has a bonding head 58 mounted thereon. The XY stage 56 is a moving table that moves the bonding head 58 to a desired position in the XY plane. The XY plane is a plane parallel to the upper surface of the gantry 52. The Y direction is a direction parallel to the longitudinal direction of the ultrasonic transducer 64 attached to a bonding arm (not shown) described later.

ボンディングヘッド58は、XYステージ56に固定されて搭載されている。ボンディングヘッド58は、Zモータ60を内蔵している。ボンディングヘッド58は、Zモータ60の駆動によって移動制御され、Z駆動アーム62及び超音波トランスデューサ64を介してウェッジツール34をZ方向に移動させる移動機構である。Zモータ60としては、例えばリニアモータを用いることができる。   The bonding head 58 is fixedly mounted on the XY stage 56. The bonding head 58 incorporates a Z motor 60. The bonding head 58 is a moving mechanism that is controlled to move by driving the Z motor 60 and moves the wedge tool 34 in the Z direction via the Z driving arm 62 and the ultrasonic transducer 64. As the Z motor 60, for example, a linear motor can be used.

Z駆動アーム62は、超音波トランスデューサ64と、ワイヤクランパ70とを有している。超音波トランスデューサ64は、根元部がZ駆動アーム62に取り付けられている。超音波トランスデューサ64の先端部には、ワイヤ18を挿通するウェッジツール34が取り付けられている。超音波トランスデューサ64には超音波振動子66が取り付けられている。超音波トランスデューサ64は、超音波振動子66が駆動することで発生する超音波エネルギをウェッジツール34に伝達する。超音波振動子66としては、例えば圧電素子を用いることができる。   The Z drive arm 62 includes an ultrasonic transducer 64 and a wire clamper 70. The base of the ultrasonic transducer 64 is attached to the Z drive arm 62. A wedge tool 34 for inserting the wire 18 is attached to the tip of the ultrasonic transducer 64. An ultrasonic transducer 66 is attached to the ultrasonic transducer 64. The ultrasonic transducer 64 transmits ultrasonic energy generated when the ultrasonic transducer 66 is driven to the wedge tool 34. As the ultrasonic transducer 66, for example, a piezoelectric element can be used.

ワイヤ18は、ボンディングヘッド58から延びるワイヤホルダの先端に設けられるワイヤスプール72に巻回されている。ワイヤ18は、ワイヤスプール72からワイヤクランパ70を介してウェッジツール34の貫通孔に挿通されて、ウェッジツール34の先端から突き出ている。   The wire 18 is wound around a wire spool 72 provided at the tip of a wire holder extending from the bonding head 58. The wire 18 is inserted from the wire spool 72 through the wire clamper 70 into the through hole of the wedge tool 34 and protrudes from the tip of the wedge tool 34.

ワイヤクランパ70は、Z駆動アーム62に取り付けられ、ワイヤ18の両側に配置される1組の挟み板である。この向かい合う挟み板の間を開くことでワイヤ18を自由に延出しうる状態とし、向かい合う挟み板の間を閉じることで、ワイヤ18の延出を停止させることができる。   The wire clamper 70 is a set of sandwich plates that are attached to the Z drive arm 62 and disposed on both sides of the wire 18. The wire 18 can be freely extended by opening the gap between the opposing sandwich plates, and the extension of the wire 18 can be stopped by closing the gap between the opposite sandwich plates.

コンピュータ100は、ワイヤボンディング装置50の各要素の動作を全体として制御する。コンピュータ100は、CPUである制御部76と、各種のインタフェース回路と、メモリ78を有している。これらは互いに内部バス96で接続されている。   The computer 100 controls the operation of each element of the wire bonding apparatus 50 as a whole. The computer 100 includes a control unit 76 that is a CPU, various interface circuits, and a memory 78. These are connected to each other by an internal bus 96.

各種インタフェース回路は、CPUである制御部76とワイヤボンディング装置50の各要素との間に設けられる駆動回路またはバッファ回路である。図1では、インタフェース回路をI/Fと表記する。コンピュータ100は、各種インタフェース回路として、XYステージ56に接続されるXYステージI/F102、Zモータ60に接続されるZモータI/F104、超音波振動子66に接続される超音波振動子I/F106、クランパ開閉部74に接続されるクランパ開閉I/F108を有している。   The various interface circuits are drive circuits or buffer circuits provided between the control unit 76, which is a CPU, and each element of the wire bonding apparatus 50. In FIG. 1, the interface circuit is expressed as I / F. The computer 100 includes, as various interface circuits, an XY stage I / F 102 connected to the XY stage 56, a Z motor I / F 104 connected to the Z motor 60, and an ultrasonic transducer I / F connected to the ultrasonic transducer 66. F 106 and a clamper opening / closing I / F 108 connected to the clamper opening / closing unit 74.

メモリ78は、各種プログラムと、各種制御データを格納する記憶装置である。各種プログラムは、第1のワイヤボンディング処理に関する第1ボンディングプログラム80、第2のワイヤボンディング処理に関する第2ボンディングプログラム82、第3のワイヤボンディング処理に関する第3ボンディングプログラム84、ルーピング制御に関するルーピング制御プログラム86、その他の制御処理に関する制御プログラム92である。また、メモリ78は上記各種プログラムで使用される制御データ94を有している。   The memory 78 is a storage device that stores various programs and various control data. The various programs are a first bonding program 80 related to the first wire bonding process, a second bonding program 82 related to the second wire bonding process, a third bonding program 84 related to the third wire bonding process, and a looping control program 86 related to the looping control. A control program 92 relating to other control processing. The memory 78 has control data 94 used in the various programs.

図2は、本実施形態に係る半導体装置におけるワイヤボンディングの概要を模式的に示す平面図(上方から見た図)の一例であり、半導体チップ10及び回路基板14の一部を示している。図2に示すように、回路基板14は、その上部にリード16(パッド)を有している。回路基板14上のリード16は例えば金(Au)、銅(Cu)、アルミニウム(Al)等の導電性材料を用いて形成されている。   FIG. 2 is an example of a plan view (viewed from above) schematically showing an outline of wire bonding in the semiconductor device according to the present embodiment, and shows a part of the semiconductor chip 10 and the circuit board 14. As shown in FIG. 2, the circuit board 14 has leads 16 (pads) on the top thereof. The leads 16 on the circuit board 14 are formed using a conductive material such as gold (Au), copper (Cu), and aluminum (Al).

半導体チップ10は回路基板14上に実装されている。半導体チップ10上にはパッド12が形成されている。図においては、半導体チップ10の右下部分を示している。図において左上端は半導体チップ10の中央部となる。パッド12は例えばアルミニウム(Al)を用いて形成されている。パッド12とリード16は、ワイヤ18を用いて接続されている。ワイヤ18は例えば金(Au)、銅(Cu)、アルミニウム(Al)等の導電性材料を用いて形成されている。   The semiconductor chip 10 is mounted on the circuit board 14. Pads 12 are formed on the semiconductor chip 10. In the figure, the lower right portion of the semiconductor chip 10 is shown. In the figure, the upper left corner is the central portion of the semiconductor chip 10. The pad 12 is formed using, for example, aluminum (Al). The pad 12 and the lead 16 are connected using a wire 18. The wire 18 is formed using a conductive material such as gold (Au), copper (Cu), and aluminum (Al).

ワイヤ18は、パッド12及びリード16に、ウェッジボンディング法により接合されている。複数のパッド12は、半導体チップ10の一辺に平行な方向(図においてY方向。以下、第1方向と称する場合がある)に、間隔をもって、一列に配列されている。パッド12は、第1方向に対して垂直方向(図においてX方向。以下、第2方向と称する場合がある)に長手方向を有する長方形を有している。複数のパッド12は、第1方向に、その短辺を対面させて並んでいる。   The wire 18 is bonded to the pad 12 and the lead 16 by a wedge bonding method. The plurality of pads 12 are arranged in a row at intervals in a direction parallel to one side of the semiconductor chip 10 (Y direction in the drawing, hereinafter sometimes referred to as a first direction). The pad 12 has a rectangle having a longitudinal direction in a direction perpendicular to the first direction (X direction in the drawing, hereinafter sometimes referred to as a second direction). The plurality of pads 12 are arranged in the first direction with their short sides facing each other.

回路基板14上に形成されているリード16は、パッド12よりは大きな間隔で配列されている。リード16は、パッド12に対向し、第1方向に配列されている。それぞれのリード16は、リード16とパッド12をつなぐ線に沿った方向(以下、第3方向と称する場合がある)に長手方向を有する長方形を有している。   The leads 16 formed on the circuit board 14 are arranged at a larger interval than the pads 12. The leads 16 are opposed to the pads 12 and are arranged in the first direction. Each lead 16 has a rectangular shape having a longitudinal direction in a direction along the line connecting the lead 16 and the pad 12 (hereinafter sometimes referred to as a third direction).

パッド12の長手方向(第2方向)と、パッド12とリード16をつなぐ線の方向(第3方向)のなす角は、半導体チップ10中央(図において右端)に位置するパッド12から半導体チップ10端部(図において左端)に位置するパッド12にかけて大きくなる。これは、パッド12は間隔が小さく、密に配列されているのに対し、リード16はパッド12よりも間隔が大きく配列されているためである。   The angle formed by the longitudinal direction (second direction) of the pad 12 and the direction of the line connecting the pad 12 and the lead 16 (third direction) is from the pad 12 located at the center of the semiconductor chip 10 (right end in the drawing) to the semiconductor chip 10. It becomes large toward the pad 12 located at the end (left end in the figure). This is because the pads 12 are closely spaced and closely arranged, whereas the leads 16 are spaced larger than the pads 12.

パッド12の長手方向(第2方向、後述する線32の方向)と、パッド12とリード16とを結ぶ線の方向(第3方向、後述する線30の方向)は一致していなくても良い。半導体チップ10は面積を小さく形成する要求がある。そのため、半導体チップ10上に形成するパターンは、可能な限り密に充填できるようにレイアウトされている。また、昨今、半導体チップ10の機能の高度化に伴い、パッド12を多く形成する場合が生じている。従って、半導体チップ10上のパッド12は、半導体チップ10上に密にレイアウト可能とし、多くのパッド12を形成しうるように、配列方向に短く形成されている。そのため、パッド12は配列方向に短辺を有する長方形となる場合がある。また、パッド12は、限られた半導体チップ10上の面積の範囲内で出来るだけ多くレイアウトするために、隣接するパッド12間の間隔を出来るだけ小さくして、パッド12の長手方向が同一方向となるように配列されている。従って、パッド12は、その長手方向をリード16と繋ぐ線の方向に一致させるべく、斜めに配置することが困難となる。従って、パッド12の長手方向(第2方向)と、パッド12とリード16とを繋ぐ線の方向(第3方向)は一致しない場合が多く、図においてY方向左側に行くに従い第2方向と第3方向のなす角は大きくなる。   The longitudinal direction of the pad 12 (second direction, direction of a line 32 to be described later) and the direction of a line connecting the pad 12 and the lead 16 (third direction, direction of a line 30 to be described later) may not coincide with each other. . The semiconductor chip 10 is required to be formed with a small area. Therefore, the pattern formed on the semiconductor chip 10 is laid out so as to be filled as densely as possible. In recent years, with the advancement of functions of the semiconductor chip 10, many pads 12 are formed. Accordingly, the pads 12 on the semiconductor chip 10 are formed short in the arrangement direction so that the pads 12 can be densely laid out on the semiconductor chip 10 and many pads 12 can be formed. Therefore, the pad 12 may be a rectangle having a short side in the arrangement direction. Further, in order to lay out as many pads 12 as possible within a limited area on the semiconductor chip 10, the distance between adjacent pads 12 is made as small as possible so that the longitudinal direction of the pads 12 is the same direction. It is arranged to be. Therefore, it is difficult to dispose the pad 12 at an angle so that the longitudinal direction thereof coincides with the direction of the line connecting the lead 16. Therefore, the longitudinal direction (second direction) of the pad 12 and the direction of the line connecting the pad 12 and the lead 16 (third direction) often do not coincide with each other. The angle formed by the three directions increases.

次に、本実施形態において、ウェッジボンディング法を用いてワイヤ18をパッド12及びリード16表面に接合させる工程手順の一例を説明する。先ず、本実施形態におけるウェッジボンディング法に用いるウェッジツール34について説明する。   Next, in the present embodiment, an example of a process procedure for bonding the wire 18 to the surface of the pad 12 and the lead 16 using the wedge bonding method will be described. First, the wedge tool 34 used for the wedge bonding method in this embodiment will be described.

図4に、ウェッジツール34の構造を模式的に説明するための縦断面図の一例を示す。図4は、ウェッジツール34において、ワイヤ18を挿通するための貫通孔38の方向に沿った方向での縦断面図を示している。ウェッジツール34はワイヤ18を通すための貫通孔38を有している。貫通孔38は、例えば、ウェッジツール34後方から底部(下部)にかけてウェッジツール34を貫通するように形成されている。ウェッジツール34は底部に押圧面36を有している。ボンディングの際には、図中矢印で示すように、ワイヤ18はウェッジツール34後方から貫通孔38に供給され、貫通孔38先端部からウェッジツール34底部に抜けて、押圧面36下部を通過し、前方横方向に突出している。この突出した部分は、ボンディングの際には、例えば後述する図3(a)〜(c)、図5(a)〜(e)に示すように、テール20となる。   In FIG. 4, an example of the longitudinal cross-sectional view for demonstrating the structure of the wedge tool 34 typically is shown. FIG. 4 is a longitudinal sectional view of the wedge tool 34 in a direction along the direction of the through hole 38 for inserting the wire 18. The wedge tool 34 has a through hole 38 through which the wire 18 passes. The through hole 38 is formed, for example, so as to penetrate the wedge tool 34 from the rear to the bottom (lower part) of the wedge tool 34. The wedge tool 34 has a pressing surface 36 at the bottom. At the time of bonding, as indicated by an arrow in the drawing, the wire 18 is supplied to the through hole 38 from the rear of the wedge tool 34, passes from the tip of the through hole 38 to the bottom of the wedge tool 34, and passes under the pressing surface 36. , Projecting laterally forward. This protruding portion becomes a tail 20 during bonding, as shown in FIGS. 3A to 3C and FIGS.

なお、上述のように、押圧面36から貫通孔38を通過し、ウェッジツール34後方に向かう方向は、ウェッジボンディング時において、ボンディングの接合方向となるとともに、ウェッジツール34の移動方向ともなる。すなわち、ウェッジツール34は特定の接合方向及び移動方向を有している。従って、ウェッジツール34を用いたウェッジボンディングの際には、ウェッジツール34の向きを接合方向に一致させるため、ウェッジツール34を回転させるか、回路基板14を回転させることになる。   As described above, the direction from the pressing surface 36 through the through hole 38 and toward the rear of the wedge tool 34 is the bonding direction of bonding and the moving direction of the wedge tool 34 during wedge bonding. That is, the wedge tool 34 has a specific joining direction and moving direction. Therefore, during wedge bonding using the wedge tool 34, the wedge tool 34 is rotated or the circuit board 14 is rotated in order to make the direction of the wedge tool 34 coincide with the bonding direction.

図3(a)〜(c)、及び図5(a)〜(e)は、パッド12とリード16の間をワイヤ18によって接続(接合)する手順を、工程順に順を追って説明するための図の一例である。図6は、ワイヤボンディング方法の手順を示すフローチャートの一例である。ワイヤボンディング方法の各手順は、コンピュータ100のメモリ78に格納される各プログラムの処理手順に対応し、制御部76により制御される。以下、図3(a)〜(c)、図5(a)〜(e)、図6、及び図7を参照しながら説明する。本実施形態では、ワイヤ18は、先に半導体チップ10上のパッド12(第1接続領域)に接合させ、次に回路基板14上のリード16(第2接続領域)に接合させる。   3 (a) to 3 (c) and FIGS. 5 (a) to 5 (e) are diagrams for explaining the sequence of connecting (bonding) between the pad 12 and the lead 16 by the wire 18 step by step in order of steps. It is an example of a figure. FIG. 6 is an example of a flowchart showing the procedure of the wire bonding method. Each procedure of the wire bonding method corresponds to the procedure of each program stored in the memory 78 of the computer 100 and is controlled by the control unit 76. Hereinafter, description will be made with reference to FIGS. 3A to 3C, FIGS. 5A to 5E, FIG. 6 and FIG. In the present embodiment, the wire 18 is first bonded to the pad 12 (first connection region) on the semiconductor chip 10 and then bonded to the lead 16 (second connection region) on the circuit board 14.

先ず、ボンディング対象物である半導体チップ10が搭載された回路基板14がボンディングステージ54上に位置決めセットされ、ウィンドクランパ68によって固定される。ボンディングステージ54は初期状態の場所に位置している。ワイヤ18は、ウェッジツール34の貫通孔38に、ウェッジツール34の後方から斜めに供給されている。ワイヤ18先端部は、ウェッジツール34先端より所定の長さが突出している。上述のように、この突出した部分は後にテール20となる。   First, the circuit board 14 on which the semiconductor chip 10 to be bonded is mounted is positioned and set on the bonding stage 54 and fixed by the wind clamper 68. The bonding stage 54 is located at the initial position. The wire 18 is supplied to the through hole 38 of the wedge tool 34 obliquely from the rear of the wedge tool 34. The tip of the wire 18 projects a predetermined length from the tip of the wedge tool 34. As described above, this protruding portion later becomes the tail 20.

次に、第1ボンディングプログラム80が制御部76によって実行される。第1ボンディングプログラム80により、制御部76は、パッド12上に第1接合点25を形成する信号(指令)を出力する。この指令により、XYステージI/F62とZモータI/F64からの信号が、XYステージ56とZモータ60に出力され、ウェッジツール34をパッド12の第1接合点25の形成予定位置上方に移動する(S101)。   Next, the first bonding program 80 is executed by the control unit 76. With the first bonding program 80, the control unit 76 outputs a signal (command) for forming the first bonding point 25 on the pad 12. By this command, signals from the XY stage I / F 62 and the Z motor I / F 64 are output to the XY stage 56 and the Z motor 60, and the wedge tool 34 is moved above the position where the first joint point 25 of the pad 12 is formed. (S101).

第1接合点25の形成予定位置は、半導体チップ10のパッド12上であって、図3(a)においてX方向上側の位置に設定されており、座標データとして制御データ94に格納されている。ウェッジツール34の精密な位置制御は、位置決めカメラ等(図示せず)を用いて行われる。   The formation position of the first junction point 25 is set on the pad 12 of the semiconductor chip 10 and is set to the upper position in the X direction in FIG. 3A and is stored in the control data 94 as coordinate data. . Precise position control of the wedge tool 34 is performed using a positioning camera or the like (not shown).

次に、XYステージI/F62とZモータI/F64からの信号(指令)が、XYステージ56とZモータ60に出力され、ウェッジツール34の向きを、第2方向(図においてX方向)に向くように調整する(S102)。次いで、XYステージI/F62とZモータI/F64からの信号(指令)が、XYステージ56とZモータ60に出力され、ウェッジツール34をパッド12表面まで下降させる。   Next, signals (commands) from the XY stage I / F 62 and the Z motor I / F 64 are output to the XY stage 56 and the Z motor 60, and the direction of the wedge tool 34 is changed to the second direction (X direction in the figure). Adjustment is made so as to face (S102). Next, signals (commands) from the XY stage I / F 62 and the Z motor I / F 64 are output to the XY stage 56 and the Z motor 60, and the wedge tool 34 is lowered to the surface of the pad 12.

パッド12では、第1接合点25の形成予定位置において、ウェッジツール34の押圧面36とパッド12との間にワイヤ18が挟み込まれて、ワイヤ18がパッド12表面に押圧される。次に、超音波振動子I/F106からの信号(指令)が超音波振動子66に出力され、超音波振動子66を作動させる。これにより、超音波振動が押圧面36に印加される。押圧面36に印加される超音波振動エネルギと、Zモータ60の駆動制御による押圧力とによって、ワイヤ18がパッド12に接合される。次いで、XYステージI/F62とZモータI/F64からの信号(指令)が、XYステージ56とZモータ60に出力され、押圧面36が第1接合点25から離れる方向へとウェッジツール34を上昇させる。   In the pad 12, the wire 18 is sandwiched between the pressing surface 36 of the wedge tool 34 and the pad 12 at the position where the first joint point 25 is to be formed, and the wire 18 is pressed against the surface of the pad 12. Next, a signal (command) from the ultrasonic transducer I / F 106 is output to the ultrasonic transducer 66 to operate the ultrasonic transducer 66. Thereby, ultrasonic vibration is applied to the pressing surface 36. The wire 18 is bonded to the pad 12 by the ultrasonic vibration energy applied to the pressing surface 36 and the pressing force by the drive control of the Z motor 60. Next, signals (commands) from the XY stage I / F 62 and the Z motor I / F 64 are output to the XY stage 56 and the Z motor 60, and the wedge tool 34 is moved in a direction in which the pressing surface 36 is away from the first joint point 25. Raise.

このようにして、図3(a)、図5(a)に示すように、第1ワイヤボンディング処理が実行され、パッド12上に第1接合点25が形成される(S103)。第1接合点25の接合面は、図3(a)等に示すように、平面視で略楕円形を有しており、その長手方向(接合方向)は、線32と同一方向(第2方向)となる。また、テール20は、第2方向(図においてX方向)に延伸しているため、隣接するパッド12に接触する可能性は非常に低い。   In this way, as shown in FIGS. 3A and 5A, the first wire bonding process is performed, and the first bonding point 25 is formed on the pad 12 (S103). As shown in FIG. 3A and the like, the joining surface of the first joining point 25 has a substantially elliptical shape in plan view, and its longitudinal direction (joining direction) is the same as the line 32 (second direction). Direction). Further, since the tail 20 extends in the second direction (X direction in the drawing), the possibility of contacting the adjacent pad 12 is very low.

次に、第2ボンディングプログラム82が制御部76によって実行される。第2ボンディングプログラム82により、制御部76は、リード16に第2接合点26を形成する指令を出力する。この指令により、XYステージI/F62とZモータI/F64からの信号が、XYステージ56とZモータ60に出力され、ウェッジツール34をリード16内の第2接合点26上方に移動する(S104)。   Next, the second bonding program 82 is executed by the control unit 76. With the second bonding program 82, the control unit 76 outputs a command for forming the second bonding point 26 on the lead 16. By this command, signals from the XY stage I / F 62 and the Z motor I / F 64 are output to the XY stage 56 and the Z motor 60, and the wedge tool 34 is moved above the second joint 26 in the lead 16 (S104). ).

第2接合点26の位置は、パッド12(パッド12)上の第1接合点25のチップ端側に設定され、座標データとして制御データ94に格納されている。ウェッジツール34の精密な位置制御は、位置決めカメラ等(図示せず)を用いて行われる。   The position of the second junction point 26 is set on the chip end side of the first junction point 25 on the pad 12 (pad 12), and is stored in the control data 94 as coordinate data. Precise position control of the wedge tool 34 is performed using a positioning camera or the like (not shown).

また、XYステージI/F62とZモータI/F64からの信号が、XYステージ56とZモータ60に出力され、ウェッジツール34の向きを、第3方向に向くように調整する(S105)。これにより、ウェッジツール34は線30と略同一方向(第3方向)を向く。なお、ウェッジツール34の向きの調整は、ウェッジツール34を第2接合点26上方へ移動した後に行う他、ウェッジツール34を第2接合点26上方へ移動ながら行っても、構わない。   Further, signals from the XY stage I / F 62 and the Z motor I / F 64 are output to the XY stage 56 and the Z motor 60, and the direction of the wedge tool 34 is adjusted to face the third direction (S105). Thereby, the wedge tool 34 faces substantially the same direction as the line 30 (third direction). The orientation of the wedge tool 34 may be adjusted after moving the wedge tool 34 above the second joint point 26 as well as after moving the wedge tool 34 above the second joint point 26.

次いで、XYステージI/F62とZモータI/F64からの信号が、XYステージ56とZモータ60に出力され、ウェッジツール34をリード16表面まで下降させ、ワイヤ18をリード16表面の第2接合点26の形成予定位置に押圧する。第2接合点26の形成予定位置では、ウェッジツール34の押圧面36とパッド12との間にワイヤ18が挟み込まれて、ワイヤ18がリード16表面に押圧される。   Next, signals from the XY stage I / F 62 and the Z motor I / F 64 are output to the XY stage 56 and the Z motor 60, the wedge tool 34 is lowered to the surface of the lead 16, and the wire 18 is second joined to the surface of the lead 16. The point 26 is pressed to the planned formation position. At the position where the second joining point 26 is to be formed, the wire 18 is sandwiched between the pressing surface 36 of the wedge tool 34 and the pad 12, and the wire 18 is pressed against the surface of the lead 16.

次に、超音波振動子I/F106からの信号が超音波振動子66に出力され、超音波振動子66を作動させる。これにより、超音波振動が押圧面36に印加される。押圧面36に印加される超音波振動エネルギと、Zモータ60の駆動制御による押圧力とによって、ワイヤ18とパッド12が接合される。このようにして、図3(b)及び図5(b)に示すように、パッド12における第2ワイヤボンディング処理が実行され、第2接合点26が形成される(S106)。   Next, a signal from the ultrasonic transducer I / F 106 is output to the ultrasonic transducer 66 to operate the ultrasonic transducer 66. Thereby, ultrasonic vibration is applied to the pressing surface 36. The wire 18 and the pad 12 are joined by the ultrasonic vibration energy applied to the pressing surface 36 and the pressing force by the drive control of the Z motor 60. In this way, as shown in FIGS. 3B and 5B, the second wire bonding process is performed on the pad 12 to form the second bonding point 26 (S106).

第2接合点26の接合面は、図3(b)に示すように、平面視で楕円形を有しており、その長手方向(接合方向)はパッド12とリード16を結ぶ線30と略同一方向(第3方向)となる。   As shown in FIG. 3B, the joint surface of the second joint point 26 has an elliptical shape in plan view, and its longitudinal direction (joint direction) is substantially the same as the line 30 connecting the pad 12 and the lead 16. The same direction (third direction).

なお、このウェッジツール34の方向又は第2接合点26の長手方向の精度は、ワイヤボンディング装置50の精度に左右されており、厳密に線30と同一方向(すなわち、第3方向)に一致しているとは限らない。また、装置によって精度が異なる場合があるため、ズレ量も一定ではない。すなわち、ウェッジツール34の方向又は第2接合点26の長手方向は、線32と線30のなす角θよりも大きい場合もあれば小さい場合もある。また、接合点25、26、27の接合形状は略楕円形を有するが、接合におけるワイヤ18のつぶれ具合によっても、長手方向にバラツキが生じることがある。   The accuracy of the direction of the wedge tool 34 or the longitudinal direction of the second joining point 26 depends on the accuracy of the wire bonding apparatus 50, and exactly matches the same direction as the line 30 (that is, the third direction). Not necessarily. Further, since the accuracy may vary depending on the apparatus, the amount of deviation is not constant. That is, the direction of the wedge tool 34 or the longitudinal direction of the second joining point 26 may be larger or smaller than the angle θ formed by the line 32 and the line 30. Moreover, although the joining shape of the joining points 25, 26, and 27 has a substantially elliptical shape, the longitudinal direction may vary depending on how the wire 18 is crushed.

従って、ウェッジツール34の方向又は第2接合点26の長手方向は、線32の方向(第2方向)より線30の方向(第3方向)に向けた方向、線32より線30の方向に任意の角度を回転させた方向を意味するにとどまり、厳密に線30の方向(第3方向)と同一方向を意味するわけではない。また、同様の理由により、ウェッジツール34の方向又は第1接合点25の長手方向は、テール20が隣接するパッド12に接触しない範囲で線32の方向(第2方向)に対して交差する方向又は線32の方向(第2方向)と同一方向を意味するにとどまり、厳密に線32の方向(第2方向)と同一方向に限ることを意味するわけではない。   Accordingly, the direction of the wedge tool 34 or the longitudinal direction of the second joining point 26 is a direction from the direction of the line 32 (second direction) toward the direction of the line 30 (third direction), and from the line 32 to the direction of the line 30. It means only the direction in which an arbitrary angle is rotated, and does not mean exactly the same direction as the direction of the line 30 (third direction). For the same reason, the direction of the wedge tool 34 or the longitudinal direction of the first joint point 25 intersects the direction of the line 32 (second direction) in a range where the tail 20 does not contact the adjacent pad 12. Alternatively, it only means the same direction as the direction of the line 32 (second direction), and does not mean strictly limited to the same direction as the direction of the line 32 (second direction).

続いて、図5(c)、(d)に示すように、ルーピング制御プログラム86が制御部76によって実行される。ルーピング制御プログラム86により、制御部76は、ウェッジツール34を操作し、パッド12(第1の接続領域)上の第2接合点26から、リード16(第2の接続領域)上の第3接合点27方向に向かって、ワイヤ18のループ形状(円弧形状)を形成する信号(指令)を出力する。この指令により、XYステージI/F102、ZモータI/F104及びクランパ開閉I/F108からの信号が、XYステージ56、Zモータ60及び、ワイヤクランパ70に出力される。すると、ワイヤボンディング装置50は、図5(c)に示すように、ワイヤクランパ70を開いた状態でウェッジツール34を上方に上昇させるように駆動される。   Subsequently, as shown in FIGS. 5C and 5D, the looping control program 86 is executed by the control unit 76. By the looping control program 86, the control unit 76 operates the wedge tool 34 to start the third joint on the lead 16 (second connection area) from the second joint point 26 on the pad 12 (first connection area). A signal (command) for forming a loop shape (arc shape) of the wire 18 is output toward the point 27 direction. In response to this command, signals from the XY stage I / F 102, the Z motor I / F 104, and the clamper opening / closing I / F 108 are output to the XY stage 56, the Z motor 60, and the wire clamper 70. Then, as shown in FIG. 5C, the wire bonding apparatus 50 is driven to raise the wedge tool 34 upward with the wire clamper 70 opened.

次に、XYステージI/F102及びZモータI/F104からの信号が、XYステージ56及びZモータ60に出力される。これにより、XYステージ56及びZモータ60が移動駆動されることで、ウェッジツール34は、リード16内の第3接合点27の形成予定位置に向けて移動される。第3接合点27の形成予定位置は、回路基板14上のリード16上に設定され、座標データとして制御データ94に格納されている。   Next, signals from the XY stage I / F 102 and the Z motor I / F 104 are output to the XY stage 56 and the Z motor 60. As a result, the XY stage 56 and the Z motor 60 are driven to move, so that the wedge tool 34 is moved toward the formation planned position of the third joint point 27 in the lead 16. The planned formation position of the third junction point 27 is set on the lead 16 on the circuit board 14 and stored in the control data 94 as coordinate data.

ウェッジツール34の第3接合点27形成予定位置への移動の間、ワイヤ18は、ワイヤスプール72から繰り出されて、ウェッジツール34の先端から必要なワイヤ長だけ延出される。これにより、図5(d)(e)に示すように、ワイヤ18は塑性変形を加えられながら、第3接合点27に向かってループ形状(円弧形状)を描くように延伸される(これをルーピングと称する)(S107)。   During the movement of the wedge tool 34 to the position where the third junction point 27 is to be formed, the wire 18 is unwound from the wire spool 72 and extended from the tip of the wedge tool 34 by the required wire length. Thereby, as shown in FIGS. 5D and 5E, the wire 18 is stretched so as to draw a loop shape (arc shape) toward the third joint point 27 while being plastically deformed (this is shown in FIG. (Referred to as looping) (S107).

この時、ウェッジツール34の動きに合わせて、ワイヤ18はウェッジツール34に引っ張られるため、ワイヤ18を介して第2接合点26に引っ張り応力が発生する。その後、ウェッジツール34はルーピングを行いながら第3接合点27形成予定位置の上方に移動する(S108)。   At this time, since the wire 18 is pulled by the wedge tool 34 in accordance with the movement of the wedge tool 34, a tensile stress is generated at the second joining point 26 via the wire 18. Thereafter, the wedge tool 34 moves above the position where the third joint point 27 is to be formed while looping (S108).

次に、第3ボンディングプログラム84が制御部76によって実行される。第3ボンディングプログラム84により、制御部76は、リード16に第3接合点27を形成する信号(指令)を出力する。この時、ウェッジツール34は、線30方向(第3方向)を向いている。リード16(パッド)は長方形を有しており、その長手方向は、線30方向(第3方向)を向いている。   Next, the third bonding program 84 is executed by the control unit 76. With the third bonding program 84, the control unit 76 outputs a signal (command) for forming the third bonding point 27 on the lead 16. At this time, the wedge tool 34 is directed in the direction of the line 30 (third direction). The lead 16 (pad) has a rectangular shape, and its longitudinal direction faces the direction of the line 30 (third direction).

次いで、XYステージI/F62とZモータI/F64からの信号が、XYステージ56とZモータ60に出力され、ウェッジツール34をリード16表面まで下降させ、ワイヤ18をリード16上の第3接合点27の形成予定位置に押圧させる。これにより、リード16では、ワイヤ18は、ウェッジツール34の押圧面36とリード16との間に挟み込まれ、ワイヤ18がリード16表面に押圧される。   Next, signals from the XY stage I / F 62 and the Z motor I / F 64 are output to the XY stage 56 and the Z motor 60, the wedge tool 34 is lowered to the surface of the lead 16, and the wire 18 is connected to the third joint on the lead 16. The point 27 is pressed to the planned formation position. Thereby, in the lead 16, the wire 18 is sandwiched between the pressing surface 36 of the wedge tool 34 and the lead 16, and the wire 18 is pressed against the surface of the lead 16.

次に、超音波振動子I/F106からの信号が超音波振動子66に出力され、超音波振動子66を作動させる。これにより、超音波振動が押圧面36に印加される。押圧面36に印加される超音波振動エネルギと、Zモータ60の駆動制御による押圧力とによって、ワイヤ18とリード16が接合される。このようにして、リード16における第3ワイヤボンディング処理が行われ、図3(c)及び図5(e)に示すように、第3接合点27が形成される(S109)。   Next, a signal from the ultrasonic transducer I / F 106 is output to the ultrasonic transducer 66 to operate the ultrasonic transducer 66. Thereby, ultrasonic vibration is applied to the pressing surface 36. The wire 18 and the lead 16 are joined by the ultrasonic vibration energy applied to the pressing surface 36 and the pressing force by the drive control of the Z motor 60. In this way, the third wire bonding process is performed on the lead 16, and the third bonding point 27 is formed as shown in FIGS. 3C and 5E (S109).

第3接合点27の接合面は、図3(c)に示すように、平面視で楕円形を有しており、その長手方向(接合方向)は、線30と略同一方向、すなわち、第3方向を向いている。
なお、ウェッジツール34の方向又は第2接合点26の長手方向の精度に関する理由と同様の理由により、ウェッジツール34の方向又は第3接合点27の長手方向は、線32の方向(第2方向)より線30の方向(第3方向)に向けた方向、線32より線30の方向に任意の角度を回転させた方向を意味するにとどまり、厳密に線30の方向(第3方向)と同一方向を意味するわけではない。
As shown in FIG. 3C, the joint surface of the third joint point 27 has an elliptical shape in plan view, and its longitudinal direction (joint direction) is substantially the same direction as the line 30, that is, the first It faces 3 directions.
For the same reason as the reason for the accuracy of the direction of the wedge tool 34 or the longitudinal direction of the second joint point 26, the direction of the wedge tool 34 or the longitudinal direction of the third joint point 27 is the direction of the line 32 (second direction). ) Means a direction toward the direction of the line 30 (third direction), a direction rotated by an arbitrary angle from the line 32 to the direction of the line 30, and strictly refers to the direction of the line 30 (third direction). It does not mean the same direction.

次いで、XYステージI/F62、ZモータI/F64及びクランパ開閉I/F108からの信号が、XYステージ56、Zモータ60及びワイヤクランパ70に出力される。これにより、ウェッジツール34を固定したまま、ワイヤ18をクランプして引っ張り、ワイヤ18が第3接合点27後方で切断される(S110)。以上により、本実施形態に係るワイヤボンディングを形成することができる。   Next, signals from the XY stage I / F 62, the Z motor I / F 64 and the clamper opening / closing I / F 108 are output to the XY stage 56, the Z motor 60 and the wire clamper 70. Thereby, the wire 18 is clamped and pulled while the wedge tool 34 is fixed, and the wire 18 is cut behind the third joint point 27 (S110). As described above, the wire bonding according to the present embodiment can be formed.

ここで、例えば、パッド12上に、上述に説明した第1接合点25及び第2接合点26のように長手方向(接合方向)を異にする二つの接合点を設けず、図7(a)に示すように、長手方向(接合方向)がパッド12とリード16を繋いだ方向(線30方向)を向いた一つの接合点40を形成した場合を想定する。   Here, for example, two bonding points having different longitudinal directions (bonding directions) such as the first bonding point 25 and the second bonding point 26 described above are not provided on the pad 12, and FIG. ), A case is assumed in which one joining point 40 is formed in which the longitudinal direction (joining direction) faces the direction connecting the pad 12 and the lead 16 (line 30 direction).

この場合、ワイヤ18は線30方向を向いているため、テール20先端が隣接するパッド12方向に突出している。隣接するパッド12間の距離は小さいため、テール20が隣接するパッド12に接触し、隣接パッド12間でショート42が生じる可能性がある。   In this case, since the wire 18 faces the direction of the line 30, the tip of the tail 20 projects in the direction of the adjacent pad 12. Since the distance between the adjacent pads 12 is small, the tail 20 may come into contact with the adjacent pads 12 and a short circuit 42 may occur between the adjacent pads 12.

本実施形態では、第1接合点25の長手方向(接合方向)が、パッド12の長手方向(線32方向、図においてX方向)に向いているため、テール20も線32方向を向いている。従って、テール20が隣接するパッド12に接触する可能性は極めて小さい。これにより、隣接パッド12間でショートが生じる可能性は極めて小さい。   In the present embodiment, since the longitudinal direction (joining direction) of the first joining point 25 is oriented in the longitudinal direction (line 32 direction, X direction in the drawing) of the pad 12, the tail 20 is also oriented in the line 32 direction. . Therefore, the possibility that the tail 20 contacts the adjacent pad 12 is very small. As a result, the possibility of a short circuit between adjacent pads 12 is extremely small.

また、例えば、パッド12上に、上述に説明した第1接合点25及び第2接合点26のように長手方向(接合方向)を異にする二つの接合点を設けず、図7(b)に示すように、長手方向(接合方向)がパッド12の長手方向(線32方向、図においてX方向)を向いた一つの接合点40を形成した場合を想定する。この場合、接合点40の長手方向が線32方向に向いている。   Further, for example, two bonding points having different longitudinal directions (bonding directions) such as the first bonding point 25 and the second bonding point 26 described above are not provided on the pad 12, and FIG. As shown in FIG. 4, a case is assumed where one joining point 40 is formed in which the longitudinal direction (joining direction) faces the longitudinal direction of the pad 12 (line 32 direction, X direction in the drawing). In this case, the longitudinal direction of the junction point 40 is directed in the direction of the line 32.

この状態でルーピングを行った場合、ワイヤ18のループ形成時に加わる引っ張り力は、線30方向に加えられるが、接合点40の接合方向と、ワイヤ18による引っ張り力が加えられる向きが異なる。従って、ワイヤ18による引っ張り力によって、接合点40端の片側のネック44に応力が集中するため、この箇所にダメージ(亀裂)が生じ、オープン(断線)不良が発生する可能性がある。   When looping is performed in this state, the tensile force applied when forming the loop of the wire 18 is applied in the direction of the line 30, but the joining direction of the joining point 40 and the direction in which the tensile force by the wire 18 is applied are different. Therefore, since the stress is concentrated on the neck 44 on one side of the end of the joining point 40 due to the pulling force by the wire 18, damage (crack) may occur in this portion, and open (disconnection) failure may occur.

本実施形態では、第2接合点26の長手方向(接合方向)が、パッド12とリード16を繋いだ方向(線30方向、第3方向)に向いている。そのため、ワイヤ18のループ形成時に加わる応力がネックに集中することがない。従って、この箇所で亀裂が生じることが抑制され、ワイヤ18のオープン(断線)不良が発生する可能性は極めて小さい。   In the present embodiment, the longitudinal direction (bonding direction) of the second bonding point 26 is directed to the direction connecting the pad 12 and the lead 16 (line 30 direction, third direction). Therefore, the stress applied when forming the loop of the wire 18 does not concentrate on the neck. Therefore, the occurrence of cracks at this location is suppressed, and the possibility of occurrence of an open (disconnection) failure of the wire 18 is extremely small.

以上に説明したように、本実施形態によれば、半導体チップ10上のパッド12に第1接合点25と第2接合点26を有している。第1接合点25において、その長手方向(接合方向)は、パッド12の長手方向、すなわち線32方向に向いているため、テール20も線32方向を向いている。すなわち、テール20が隣接するパッド12方向に向いていない。これにより、テール20が隣接するパッド12に接触することを抑制することが可能となり、隣接するパッド12間のショートの発生を抑制することができる。   As described above, according to the present embodiment, the pad 12 on the semiconductor chip 10 has the first junction point 25 and the second junction point 26. Since the longitudinal direction (joining direction) of the first joining point 25 is oriented in the longitudinal direction of the pad 12, that is, the line 32 direction, the tail 20 is also oriented in the line 32 direction. That is, the tail 20 does not face the adjacent pad 12 direction. Thereby, it is possible to suppress the tail 20 from coming into contact with the adjacent pads 12, and it is possible to suppress the occurrence of a short circuit between the adjacent pads 12.

また、本実施形態では、第2接合点26の長手方向(接合方向)が、回路基板14上のリード16(リード16上の第3接合点27)の方向を向いている。これにより、第2接合点26端のネックにおいてワイヤ18のルーピング時に加わる応力による亀裂の発生を抑制することが可能となり、ワイヤ18のオープン不良の発生を抑制することができる。   In the present embodiment, the longitudinal direction (bonding direction) of the second bonding point 26 faces the lead 16 on the circuit board 14 (third bonding point 27 on the lead 16). Thereby, it becomes possible to suppress the occurrence of cracks due to the stress applied during the looping of the wire 18 at the neck at the end of the second joint point 26, and the occurrence of an open failure of the wire 18 can be suppressed.

すなわち、本実施形態を適用することによって、ワイヤ18のテール20の接触によるパッド間ショートを防ぎつつ、ボンディング接合部分のワイヤネックのダメージを抑制してワイヤオープンを抑制し、ひいてはワイヤ接続の歩留りを向上させることが可能となる。   That is, by applying the present embodiment, while preventing a short circuit between pads due to the contact of the tail 20 of the wire 18, damage to the wire neck at the bonding junction is suppressed, thereby suppressing the wire open, and consequently the yield of wire connection. It becomes possible to improve.

(他の実施形態)
上記に説明した実施形態は、様々な半導体装置に適用することができる。例えば、NAND型又はNOR型のフラッシュメモリ、EPROM、あるいはDRAM、SRAM、その他の半導体記憶装置、あるいは種々のロジックデバイス、その他の半導体装置に適用しても良い。
(Other embodiments)
The embodiment described above can be applied to various semiconductor devices. For example, the present invention may be applied to NAND-type or NOR-type flash memory, EPROM, DRAM, SRAM, other semiconductor memory devices, various logic devices, and other semiconductor devices.

上述のように、本発明のいくつかの実施形態を説明したが、これらの実施形態は、例として提示したものであり、発明の範囲を限定することは意図していない。これら新規な実施形態は、その他の様々な形態で実施することが可能であり、発明の要旨を逸脱しない範囲で、種々の省略、置き換え、変更を行うことができる。これら実施形態やその変形は、発明の範囲や要旨に含まれるとともに、特許請求の範囲に記載された発明とその均等の範囲に含まれる。   Although several embodiments of the present invention have been described above, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the spirit of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

図面中、10は半導体チップ、12はパッド、14は回路基板、16はリード、18はワイヤ、20はテール、25は第1接合点、26は第2接合点、27は第3接合点、34はウェッジツール、36は押圧面、38は貫通孔、50はワイヤボンディング装置、76は制御部、100はコンピュータである。   In the drawing, 10 is a semiconductor chip, 12 is a pad, 14 is a circuit board, 16 is a lead, 18 is a wire, 20 is a tail, 25 is a first junction point, 26 is a second junction point, 27 is a third junction point, Reference numeral 34 denotes a wedge tool, 36 denotes a pressing surface, 38 denotes a through hole, 50 denotes a wire bonding apparatus, 76 denotes a control unit, and 100 denotes a computer.

Claims (5)

回路基板と、
前記回路基板上に搭載された半導体チップと、を有し、
前記半導体チップは、その上面に、長方形を有し、第1の接続領域となるボンディング用パッドを少なくとも二つ以上、お互いの長辺を対面させるように第1の方向に配列して有し、
前記回路基板は、第2の接続領域となるボンディング用リードを少なくとも二つ以上前記第1の方向に配列して有し、
前記第1の接続領域と、これに対応する前記第2の接続領域は、ウェッジボンディング法によるワイヤ接合により、第1の接合点、第2の接合点、及び第3の接合点を利用して接続されており、
前記第1及び第2の接合点は、略楕円形を有し、前記第1の接続領域上に、第1の方向に垂直な第2の方向に配列して形成されており、
前記第3の接合点は、略楕円形を有し、前記第2の接続領域上に形成されており、
前記第1の接合点の長手方向は、前記第2の方向を向いており、
前記第2の接合点と前記第3の接合点を結ぶ方向を第3の方向とした場合に、第2の接合点の長手方向は、前記第2の方向より前記第3の方向に向いていることを特徴とする半導体装置。
A circuit board;
A semiconductor chip mounted on the circuit board,
The semiconductor chip has a rectangular shape on its upper surface, and has at least two bonding pads serving as a first connection region, arranged in a first direction so that their long sides face each other,
The circuit board has at least two bonding leads serving as second connection regions arranged in the first direction,
The first connection region and the second connection region corresponding to the first connection region are formed by wire bonding by a wedge bonding method, using the first bonding point, the second bonding point, and the third bonding point. Connected,
The first and second junction points have a substantially elliptical shape, and are formed on the first connection region and arranged in a second direction perpendicular to the first direction,
The third junction point has a substantially oval shape and is formed on the second connection region;
The longitudinal direction of the first joining point is directed to the second direction,
When the direction connecting the second joint point and the third joint point is the third direction, the longitudinal direction of the second joint point is directed to the third direction from the second direction. A semiconductor device characterized by comprising:
前記第2の接合点の長手方向は、前記第3の方向に平行であることを特徴とする請求項1に記載の半導体装置。   The semiconductor device according to claim 1, wherein a longitudinal direction of the second junction point is parallel to the third direction. 前記第2の接合点の長手方向は、前記第3の接合点の長手方向と同じ方向であることを特徴とする請求項1に記載の半導体装置。   The semiconductor device according to claim 1, wherein a longitudinal direction of the second junction point is the same as a longitudinal direction of the third junction point. 半導体チップを搭載した回路基板を載置可能なステージと、
ウェッジボンディング法によるボンディングを行うためのツールを取り付け可能なボンディングアームと、
前記ツールの動作を制御する制御部と、を有し、
前記半導体チップ上には、第1の方向に複数が配列され、それぞれが長方形を有し、その長手方向が第1の方向に垂直な第2の方向を向く第1の接続領域を有し、
前記回路基板上には、それぞれが長方形を有し、その長手方向が前記第1の接続領域と前記第2の接続領域を結ぶ線の方向(以下、第2方向と称する)を向く第2の接続領域を有しており、
前記制御部は、前記ツールを前記第1の接続領域内の第1の接合点上に移動させ、ウェッジボンディング法により前記第1の接合点を形成し、前記ツールを前記第1の接続領域内であって第2の方向に沿って第1の接合点に隣接する第2の接合点上に移動させ、前記第1の接続領域と第2の接続領域を結ぶ方向を第3方向とした場合に、前記ツールを、前記第2の方向よりも前記第3の方向に向けた方向となるように制御し、ウェッジボンディング法により第2の接合点を形成し、前記ツールを前記方向に向けた状態でルーピングを行いながら前記第2の接続領域内の第3の接合点上に移動させ、第3の接合点を形成する制御を行うことを特徴とするワイヤボンディング装置。
A stage on which a circuit board on which a semiconductor chip is mounted can be placed;
A bonding arm to which a tool for bonding by the wedge bonding method can be attached;
A control unit for controlling the operation of the tool,
On the semiconductor chip, a plurality of elements are arranged in a first direction, each has a rectangular shape, and a longitudinal direction thereof has a first connection region facing a second direction perpendicular to the first direction,
On the circuit board, each has a rectangular shape, and a longitudinal direction thereof is a second direction facing a direction of a line connecting the first connection region and the second connection region (hereinafter referred to as a second direction). Has a connection area,
The control unit moves the tool onto a first joint point in the first connection region, forms the first joint point by a wedge bonding method, and moves the tool in the first connection region. When the second direction is moved along the second direction onto the second junction point adjacent to the first junction point, and the direction connecting the first connection region and the second connection region is the third direction. In addition, the tool is controlled so as to be directed in the third direction rather than the second direction, a second bonding point is formed by a wedge bonding method, and the tool is directed in the direction. A wire bonding apparatus that performs control to form a third joint point by moving the third joint point in the second connection region while looping in a state.
前記第2の接合点は略楕円形を有しており、その長手方向は、前記第3方向に平行であることを特徴とする請求項4に記載のワイヤボンディング装置。
The wire bonding apparatus according to claim 4, wherein the second joining point has a substantially elliptical shape, and a longitudinal direction thereof is parallel to the third direction.
JP2014048845A 2014-03-12 2014-03-12 Semiconductor device and wire bonding device Pending JP2015173205A (en)

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