JPH0431187B2 - - Google Patents
Info
- Publication number
- JPH0431187B2 JPH0431187B2 JP60171068A JP17106885A JPH0431187B2 JP H0431187 B2 JPH0431187 B2 JP H0431187B2 JP 60171068 A JP60171068 A JP 60171068A JP 17106885 A JP17106885 A JP 17106885A JP H0431187 B2 JPH0431187 B2 JP H0431187B2
- Authority
- JP
- Japan
- Prior art keywords
- thermal expansion
- integrated circuit
- glass
- weight
- lead piece
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 9
- 230000009466 transformation Effects 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 229910000734 martensite Inorganic materials 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 238000005097 cold rolling Methods 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 3
- 238000005098 hot rolling Methods 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 239000011521 glass Substances 0.000 description 18
- 239000000463 material Substances 0.000 description 13
- 239000000758 substrate Substances 0.000 description 13
- 239000000919 ceramic Substances 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 10
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 8
- 229910010271 silicon carbide Inorganic materials 0.000 description 8
- 238000007789 sealing Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 239000005394 sealing glass Substances 0.000 description 6
- 238000005482 strain hardening Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 5
- 229910001566 austenite Inorganic materials 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 229910020598 Co Fe Inorganic materials 0.000 description 2
- 229910002519 Co-Fe Inorganic materials 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 2
- 230000003009 desulfurizing effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001313 Cobalt-iron alloy Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910017709 Ni Co Inorganic materials 0.000 description 1
- 229910003267 Ni-Co Inorganic materials 0.000 description 1
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- 229910003262 Ni‐Co Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000005385 borate glass Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 229910000174 eucryptite Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- ZPPSOOVFTBGHBI-UHFFFAOYSA-N lead(2+);oxido(oxo)borane Chemical compound [Pb+2].[O-]B=O.[O-]B=O ZPPSOOVFTBGHBI-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
Landscapes
- Heat Treatment Of Steel (AREA)
- Lead Frames For Integrated Circuits (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60171068A JPS6232631A (ja) | 1985-08-05 | 1985-08-05 | 集積回路パッケージ用リード片の製法 |
| US06/890,533 US4729010A (en) | 1985-08-05 | 1986-07-30 | Integrated circuit package with low-thermal expansion lead pieces |
| EP86305894A EP0211618B1 (en) | 1985-08-05 | 1986-07-31 | Integrated circuit package |
| DE8686305894T DE3672709D1 (de) | 1985-08-05 | 1986-07-31 | Integrierte schaltungspackung. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60171068A JPS6232631A (ja) | 1985-08-05 | 1985-08-05 | 集積回路パッケージ用リード片の製法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6232631A JPS6232631A (ja) | 1987-02-12 |
| JPH0431187B2 true JPH0431187B2 (lt) | 1992-05-25 |
Family
ID=15916442
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60171068A Granted JPS6232631A (ja) | 1985-08-05 | 1985-08-05 | 集積回路パッケージ用リード片の製法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6232631A (lt) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2736460B2 (ja) * | 1989-11-30 | 1998-04-02 | 京セラ株式会社 | 半導体素子収納用パッケージ |
| JP2736453B2 (ja) * | 1989-11-27 | 1998-04-02 | 京セラ株式会社 | 半導体素子収納用パッケージ |
| JP2764340B2 (ja) * | 1990-06-26 | 1998-06-11 | 京セラ株式会社 | 半導体素子収納用パッケージ |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54124972A (en) * | 1978-03-23 | 1979-09-28 | Tamagawa Kikai Kinzoku Kk | Semiconductor lead material |
| JPS5596664A (en) * | 1979-01-16 | 1980-07-23 | Furukawa Electric Co Ltd:The | Copper alloy for lead frame of semiconductor element |
| JPS563653A (en) * | 1979-06-23 | 1981-01-14 | Nippon Gakki Seizo Kk | Manufacture of seal bonding material |
| JPS5933857A (ja) * | 1982-08-19 | 1984-02-23 | Hitachi Metals Ltd | Ｉｃリ−ドフレ−ム材料とその製造方法 |
| JPS5996245A (ja) * | 1982-11-22 | 1984-06-02 | Daido Steel Co Ltd | リ−ドフレ−ム材料およびその製造方法 |
| JPS59198741A (ja) * | 1983-04-25 | 1984-11-10 | Nippon Gakki Seizo Kk | 半導体集積回路用リ−ドフレ−ム材 |
| JPS61235535A (ja) * | 1985-04-10 | 1986-10-20 | Hitachi Metals Ltd | リ−ドフレ−ム用合金 |
-
1985
- 1985-08-05 JP JP60171068A patent/JPS6232631A/ja active Granted
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54124972A (en) * | 1978-03-23 | 1979-09-28 | Tamagawa Kikai Kinzoku Kk | Semiconductor lead material |
| JPS5596664A (en) * | 1979-01-16 | 1980-07-23 | Furukawa Electric Co Ltd:The | Copper alloy for lead frame of semiconductor element |
| JPS563653A (en) * | 1979-06-23 | 1981-01-14 | Nippon Gakki Seizo Kk | Manufacture of seal bonding material |
| JPS5933857A (ja) * | 1982-08-19 | 1984-02-23 | Hitachi Metals Ltd | Ｉｃリ−ドフレ−ム材料とその製造方法 |
| JPS5996245A (ja) * | 1982-11-22 | 1984-06-02 | Daido Steel Co Ltd | リ−ドフレ−ム材料およびその製造方法 |
| JPS59198741A (ja) * | 1983-04-25 | 1984-11-10 | Nippon Gakki Seizo Kk | 半導体集積回路用リ−ドフレ−ム材 |
| JPS61235535A (ja) * | 1985-04-10 | 1986-10-20 | Hitachi Metals Ltd | リ−ドフレ−ム用合金 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6232631A (ja) | 1987-02-12 |
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