JPH04304453A - Reticle and exposing method - Google Patents
Reticle and exposing methodInfo
- Publication number
- JPH04304453A JPH04304453A JP3068674A JP6867491A JPH04304453A JP H04304453 A JPH04304453 A JP H04304453A JP 3068674 A JP3068674 A JP 3068674A JP 6867491 A JP6867491 A JP 6867491A JP H04304453 A JPH04304453 A JP H04304453A
- Authority
- JP
- Japan
- Prior art keywords
- reticle
- chip
- shielding band
- areas
- light shielding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000007689 inspection Methods 0.000 abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は半導体装置の製造に使用
されるレチクル及び露光方法に関するものである。LS
Iウェーハプロセスの露光工程に関し、近年、LSIの
コストダウンと生産効率の向上が要求されている。この
ためレチクルを用いて素子パターンを露光する露光工程
においても短手番化及び管理項目の低減化が要求されて
いる。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reticle and an exposure method used in the manufacture of semiconductor devices. L.S.
Regarding the exposure step of the I-wafer process, in recent years there has been a demand for reducing the cost of LSI and improving production efficiency. For this reason, even in the exposure process in which a device pattern is exposed using a reticle, there is a need to shorten the number of steps and reduce the number of management items.
【0002】0002
【従来の技術】従来、1枚のレチクル中に1層かつ1種
類のチップ領域を有するレチクルをステッパーにセット
し、ウェーハ又は原寸マスクに露光を行い、その層の素
子パターンをウェーハ等の上に焼付け、続いてレチクル
を次の層の素子パターンを有するレチクルと交換し、レ
チクルをステッパにセットし、同様の処理を行っている
。また、一つの種類のデバイスパターンの露光を行った
後別の種類のデバイスパターンを露光するときにも同様
にレチクルを交換し、次のレチクルをステッパーにセッ
トして露光を行う[Prior Art] Conventionally, a reticle having one layer and one type of chip area in one reticle is set on a stepper, and a wafer or full-size mask is exposed to light to form an element pattern of that layer on a wafer, etc. After baking, the reticle is replaced with a reticle having the element pattern of the next layer, the reticle is set on a stepper, and the same process is performed. Also, after exposing one type of device pattern, when exposing another type of device pattern, the reticle is replaced in the same way, and the next reticle is set on the stepper and exposed.
【0003】従来のレチクルを図3に示す。図中、1は
レチクル、2はレチクルの外側に設けられた遮光帯であ
る。遮光帯は表面処理を施したアルミニウム板よりなり
、光を遮る役割をする。このレチクル1では同一品種A
、同一層種xのチップのパターンを同時に4個露光する
。また、aはチップサイズを示す。ところが、異なる層
y、異なる品種Bのチップ領域を次に露光する場合、異
なる層、異なる品種のチップ領域を有した別のレチクル
2(図4)を用意し、レチクルを交換し、次にステッパ
ーに位置決めし、再度レチクルを検査していた。A conventional reticle is shown in FIG. In the figure, 1 is a reticle, and 2 is a light-shielding band provided outside the reticle. The light-shielding band is made of a surface-treated aluminum plate and serves to block light. In this reticle 1, the same type A
, four chip patterns of the same layer type x are exposed simultaneously. Further, a indicates the chip size. However, when a chip area of a different layer y and a different type B is to be exposed next time, another reticle 2 (Fig. 4) having a chip area of a different layer and a different type is prepared, the reticle is replaced, and then the stepper He then inspected the reticle again.
【0004】0004
【発明が解決しようとする課題】従って、小ロット、多
品種を製造する必要のあるASIC等ではレチクル交換
、レチクル再位置決めレチクル検査が露光工程に占める
時間の割合が大きくなり、露光装置の処理能力を落とす
という問題を生じていた。またレチクル枚数も品種に応
じて多大となるため必要なレチクルの所在の確認、ジャ
ストインタイムな露光製造装置への供給などのレチクル
管理も困難になっていた。[Problems to be Solved by the Invention] Therefore, in ASICs and the like that need to manufacture small lots and a wide variety of products, reticle exchange, reticle repositioning, and reticle inspection occupy a large proportion of the time in the exposure process, and the throughput of the exposure equipment is reduced. This caused the problem of dropping the . Furthermore, the number of reticles increases depending on the product type, making it difficult to manage reticles such as confirming the location of necessary reticles and just-in-time supply to exposure manufacturing equipment.
【0005】[0005]
【課題を解決するための手段】本発明に係るレチクルは
、1枚のレチクル中に、多層半導体装置の2層以上の素
子パターン及び/又は2種以上の半導体装置の1又は2
層以上の素子パターンを有することを特徴とする。また
、本発明の露光方法は、上記レチクルをステッパーにセ
ットし、位置決めし、移動式遮光帯により一又は二以上
の任意のチップの素子パターンのみを露光することを特
徴とする。[Means for Solving the Problems] A reticle according to the present invention includes element patterns of two or more layers of a multilayer semiconductor device and/or one or two layers of two or more types of semiconductor devices in one reticle.
It is characterized by having an element pattern of more than one layer. Further, the exposure method of the present invention is characterized in that the reticle is set on a stepper, positioned, and only the element pattern of one or more arbitrary chips is exposed using a movable light-shielding band.
【0006】図1は本発明におけるレチクルの原理図で
ある。図1では、品種A、Bのそれぞれx、y層のチッ
プ領域を有するレチクル1を示している。また、Axの
チップ領域を露光する場合は、図2のようにAxの領域
にステッパーの遮光帯2を設定すると、遮光帯外側のA
y,Bx、Byは露光されない。遮光帯2は4枚のアル
ミニウム板などをレチクルのAx、Ay、Bx、Byの
各領域に可動にステッパーの一部として構成する。この
ようにするとレチクルの移動、再位置決めすることなし
に、別の任意のチップのみを露光することができる。各
々のチップ領域Ax、Ay、Bx、Byは隣のチップ領
域を遮光する遮光帯の停止精度分だけ、例えば1mm以
上、遮光帯から離れた位置に配置される。ステッパーの
遮光帯の順序設定のためには、予め遮光順序を書込んだ
専用のファイルを作製しておくことにより、そのファイ
ルの選択を行えば、自動的に遮光順序が設定される。FIG. 1 is a diagram showing the principle of a reticle according to the present invention. FIG. 1 shows a reticle 1 having chip regions of x and y layers of types A and B, respectively. In addition, when exposing the chip area of Ax, if the stepper's light-shielding band 2 is set in the Ax area as shown in FIG.
y, Bx, By are not exposed. The light-shielding band 2 is constituted by four aluminum plates or the like as part of a stepper movable in each region of Ax, Ay, Bx, and By of the reticle. In this way, only another arbitrary chip can be exposed without moving or repositioning the reticle. Each of the chip areas Ax, Ay, Bx, and By is arranged at a position separated from the light-shielding band by the stopping precision of the light-shielding band that blocks light from the adjacent chip area, for example, 1 mm or more. In order to set the order of the shading bands of the stepper, a special file in which the shading order is written is prepared in advance, and when that file is selected, the shading order is automatically set.
【0007】[0007]
【作用】本発明では、図2のように、複数個の異なる品
種、層のチップを配置したレチクルを用意することによ
り、1枚のレチクルに配置された異なるチップ領域が1
回のレチクル交換、位置決め、レチクル検査により、ス
テッパーの遮光帯位置を偏光するだけで任意に露光する
ことができる。以下、実施例により本発明を説明する。[Operation] In the present invention, as shown in FIG. 2, by preparing a reticle in which chips of a plurality of different types and layers are arranged, different chip areas arranged on one reticle can be
By changing the reticle, positioning, and inspecting the reticle multiple times, it is possible to perform arbitrary exposure simply by polarizing the light shielding zone position of the stepper. The present invention will be explained below with reference to Examples.
【0008】[0008]
【実施例】図3は本発明に係るレチクルの実施例を示す
図である。チップサイズが2mm×2mmと小チップ品
の素子分離層E、ゲート形成層F、電極形式層G、配線
形式層H4層を1枚のクロム板製レチクル10中に2m
m(ウェーハ上の寸法)の間隔で配置したレチクル10
である。ステッパーの有効露光領域は通常、15mm×
15mmの面積は有しているので、E、F、G、Hのす
べてが焼付け可能である。遮光帯により遮光されない層
をE、F、G、Hの位置に設定し、焼付領域を制限する
。遮光帯により設定される開放部は各層の10mm×1
0mmより大きいのでパターンを配置しない領域はCr
を残して光が透過しないようにしておく。図3では4ケ
所に4種の層を配置した例を示したが、ステッパーの有
効露光領域内に効率良く配置してゆけば、挿入層、数は
4層以上でも良い。本例では、レチクル交換、位置決め
、レチクル検査を先ず1時間程度の時間をかけて行い、
その後Eを露光し、素子分離帯形成のためのエッチング
、酸化などが終了するまで待機し、次に遮光帯を設定し
、ウェーハの移動を行い、順次ゲート形成(I)を行い
、同様に電極形成(G)及び配線層形成(H)の露光を
行う。Embodiment FIG. 3 is a diagram showing an embodiment of a reticle according to the present invention. A small chip product with a chip size of 2 mm x 2 mm has an element isolation layer E, a gate formation layer F, an electrode format layer G, and a wiring format layer H4 layer of 2 m in one chrome plate reticle 10.
Reticles 10 arranged at intervals of m (dimensions on the wafer)
It is. The effective exposure area of a stepper is usually 15mm x
Since it has an area of 15 mm, all of E, F, G, and H can be printed. Layers that are not shaded by the shade band are set at positions E, F, G, and H to limit the printing area. The open area set by the shading zone is 10mm x 1 for each layer.
Since it is larger than 0 mm, the area where the pattern is not placed is Cr.
Leave it so that no light passes through. Although FIG. 3 shows an example in which four types of layers are arranged at four locations, four or more layers may be inserted as long as they can be efficiently arranged within the effective exposure area of the stepper. In this example, we first spent about an hour replacing the reticle, positioning, and inspecting the reticle.
After that, E is exposed to light, and the etching and oxidation for forming the device isolation zone are completed. Next, a light-shielding zone is set, the wafer is moved, and gate formation (I) is performed sequentially. Exposure for formation (G) and wiring layer formation (H) is performed.
【0009】[0009]
【発明の効果】以上説明した様に、本発明によれば、1
レチクル中に2層あるいは2種以上のチップ領域を配置
する。又、これをステッパーに一度セットすると任意の
チップ領域を露光することができる。これによって、本
発明によると次のような効果が奏される。
(イ)レチクル枚数減によりレチクル管理が容易になる
ので、レチクル待ち時間の短縮、レチクル間違い等によ
るトラブルが少なくなる。
(ロ)レチクル交換回数を少なくし、位置決め、レチク
ル検査分、処理時間を短縮することができるので、露光
装置の処理能力を向上することができる。[Effects of the Invention] As explained above, according to the present invention, 1
Two layers or two or more types of chip regions are arranged in the reticle. Furthermore, once this is set on a stepper, any desired chip area can be exposed. As a result, according to the present invention, the following effects are achieved. (a) Reticle management becomes easier due to a reduction in the number of reticles, so reticle waiting time is shortened and troubles due to incorrect reticles are reduced. (b) The number of times the reticle is replaced can be reduced, positioning, reticle inspection, and processing time can be shortened, so the throughput of the exposure apparatus can be improved.
【図1】本発明に係るレチクルを示す図である。FIG. 1 is a diagram showing a reticle according to the present invention.
【図2】本発明に係る露光法の説明図である。FIG. 2 is an explanatory diagram of an exposure method according to the present invention.
【図3】実施例に係るレチクルを示す図である。FIG. 3 is a diagram showing a reticle according to an example.
【図4】従来のレチクルを示す図である。FIG. 4 is a diagram showing a conventional reticle.
【図5】従来のレチクルを示す図である。FIG. 5 is a diagram showing a conventional reticle.
【符合の説明】1 レチクル 2 遮光帯 10 レチクル[Explanation of code] 1 Reticle 2. Shading zone 10 Reticle
Claims (2)
の2層以上の素子パターン及び/又は2種以上の半導体
装置の1又は2層以上の素子パターンを有することを特
徴とするレチクル。1. A reticle comprising, in one reticle, element patterns of two or more layers of a multilayer semiconductor device and/or element patterns of one or more layers of two or more types of semiconductor devices.
にセットし、位置決めし、移動式遮光帯により一又は二
以上の任意のチップの素子パターンのみを露光すること
を特徴とする露光方法。2. An exposure method, which comprises setting the reticle according to claim 1 on a stepper, positioning the reticle, and exposing only the element pattern of one or more arbitrary chips using a movable light-shielding band.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3068674A JPH04304453A (en) | 1991-04-02 | 1991-04-02 | Reticle and exposing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3068674A JPH04304453A (en) | 1991-04-02 | 1991-04-02 | Reticle and exposing method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04304453A true JPH04304453A (en) | 1992-10-27 |
Family
ID=13380501
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3068674A Withdrawn JPH04304453A (en) | 1991-04-02 | 1991-04-02 | Reticle and exposing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04304453A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004040372A1 (en) * | 2002-11-01 | 2004-05-13 | Systems On Silicon Manufacturing Co. Pte. Ltd. | Multi-image reticles |
JP2005084379A (en) * | 2003-09-09 | 2005-03-31 | Renesas Technology Corp | Photomask and method for manufacturing semiconductor device |
JP2006119275A (en) * | 2004-10-20 | 2006-05-11 | Sony Corp | Method for manufacturing exposure mask, exposure mask and method for manufacturing semiconductor device |
-
1991
- 1991-04-02 JP JP3068674A patent/JPH04304453A/en not_active Withdrawn
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004040372A1 (en) * | 2002-11-01 | 2004-05-13 | Systems On Silicon Manufacturing Co. Pte. Ltd. | Multi-image reticles |
WO2004040373A1 (en) * | 2002-11-01 | 2004-05-13 | Systems On Silicon Manufacturing Co. Pte. Ltd. | Multi-image reticles |
JP2005084379A (en) * | 2003-09-09 | 2005-03-31 | Renesas Technology Corp | Photomask and method for manufacturing semiconductor device |
JP2006119275A (en) * | 2004-10-20 | 2006-05-11 | Sony Corp | Method for manufacturing exposure mask, exposure mask and method for manufacturing semiconductor device |
JP4524604B2 (en) * | 2004-10-20 | 2010-08-18 | ソニー株式会社 | Exposure mask manufacturing method, exposure mask, and semiconductor device manufacturing method |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A300 | Application deemed to be withdrawn because no request for examination was validly filed |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19980711 |