JPH04299519A - Recrystallization of amorphous silicon - Google Patents
Recrystallization of amorphous siliconInfo
- Publication number
- JPH04299519A JPH04299519A JP8788791A JP8788791A JPH04299519A JP H04299519 A JPH04299519 A JP H04299519A JP 8788791 A JP8788791 A JP 8788791A JP 8788791 A JP8788791 A JP 8788791A JP H04299519 A JPH04299519 A JP H04299519A
- Authority
- JP
- Japan
- Prior art keywords
- film
- amorphous silicon
- silicon film
- siox
- sio2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 46
- 238000001953 recrystallisation Methods 0.000 title 1
- 239000010408 film Substances 0.000 claims abstract description 124
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 48
- 239000010409 thin film Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 19
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 18
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 15
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 15
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 15
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 15
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 15
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 15
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 9
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 6
- 238000002294 plasma sputter deposition Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 abstract description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 13
- 229920005591 polysilicon Polymers 0.000 abstract description 13
- 238000002844 melting Methods 0.000 abstract description 6
- 230000003647 oxidation Effects 0.000 abstract description 6
- 238000007254 oxidation reaction Methods 0.000 abstract description 6
- 238000004544 sputter deposition Methods 0.000 abstract description 5
- 239000011521 glass Substances 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 description 10
- 230000008018 melting Effects 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- -1 phosphorus ions Chemical class 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】この発明はアモルファスシリコン
の結晶化方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a method for crystallizing amorphous silicon.
【０００２】0002
【従来の技術】アモルファスシリコンを結晶化して例え
ば薄膜トランジスタを製造する方法には、ガラス基板等
からなる絶縁基板の上面にアモルファスシリコン膜を形
成し、このアモルファスシリコン膜にエキシマレーザを
照射することにより該アモルファスシリコン膜を結晶化
してポリシリコン膜とし、このポリシリコン膜上にＳｉ
Ｏ２からなるゲート絶縁膜を形成し、以下所定の工程を
経て薄膜トランジスタを形成する方法がある。2. Description of the Related Art A method for manufacturing, for example, a thin film transistor by crystallizing amorphous silicon involves forming an amorphous silicon film on the upper surface of an insulating substrate such as a glass substrate, and irradiating the amorphous silicon film with an excimer laser. The amorphous silicon film is crystallized to form a polysilicon film, and Si is deposited on this polysilicon film.
There is a method in which a gate insulating film made of O2 is formed and a thin film transistor is formed through predetermined steps.
【０００３】0003
【発明が解決しようとする課題】しかしながら、従来の
このような薄膜トランジスタの製造方法では、ガラス基
板等からなる絶縁基板の融点が低いので、製造中に絶縁
基板が軟化しないようにするために、ポリシリコン膜上
にＳｉＯ２からなるゲート絶縁膜を形成する際、プラズ
マＣＶＤ法やスパッタ法等の低温薄膜形成方法により形
成しており、このためゲート絶縁膜の膜質が乾燥酸素も
しくは水蒸気雰囲気中で加熱する酸化法等の高温薄膜形
成方法と比較してどうしても悪くなってしまうという問
題があった。この発明の目的は、アモルファスシリコン
膜を結晶化してなるポリシリコン膜上に形成されるＳｉ
Ｏ２膜の膜質を良くすることのできるアモルファスシリ
コンの結晶化方法を提供することにある。[Problems to be Solved by the Invention] However, in the conventional manufacturing method of such a thin film transistor, since the melting point of the insulating substrate made of glass substrate etc. is low, in order to prevent the insulating substrate from softening during manufacturing, it is necessary to When forming a gate insulating film made of SiO2 on a silicon film, it is formed by a low-temperature thin film formation method such as plasma CVD or sputtering, and therefore the film quality of the gate insulating film is heated in a dry oxygen or water vapor atmosphere. There is a problem that this method is inevitably worse than high-temperature thin film forming methods such as oxidation methods. An object of the present invention is to form a silicon film on a polysilicon film formed by crystallizing an amorphous silicon film.
An object of the present invention is to provide a method for crystallizing amorphous silicon that can improve the quality of an O2 film.
【０００４】0004
【課題を解決するための手段】この発明は、アモルファ
スシリコン膜上にプラズマＣＶＤ法やスパッタ法等の低
温薄膜形成方法によりＳｉＯｘ（ｘ≧２）膜を形成し、
レーザを照射することにより、前記アモルファスシリコ
ン膜を結晶化するとともに前記アモルファスシリコン膜
と前記ＳｉＯｘ膜との境界面にＳｉＯ２膜を形成するよ
うにしたものである。[Means for Solving the Problems] This invention forms a SiOx (x≧2) film on an amorphous silicon film by a low-temperature thin film forming method such as plasma CVD or sputtering,
By irradiating the laser, the amorphous silicon film is crystallized and an SiO2 film is formed on the interface between the amorphous silicon film and the SiOx film.
【０００５】[0005]
【作用】この発明によれば、アモルファスシリコン膜上
にＳｉＯｘ膜をプラズマＣＶＤ法やスパッタ法等の低温
薄膜形成方法により形成し、次いでレーザ照射によりア
モルファスシリコン膜を結晶化するとき、レーザビーム
がアモルファスシリコン膜のみに吸収されるようにする
と、アモルファスシリコン膜のみを高温化することがで
き、このためアモルファスシリコン膜下に低融点の絶縁
基板があってもこれを加熱することなく、アモルファス
シリコン膜とＳｉＯｘ膜との境界面にＳｉＯ２膜を高温
の熱酸化により形成することができ、したがってアモル
ファスシリコン膜を結晶化してなるポリシリコン膜上に
形成されるＳｉＯ２膜の膜質を良くすることができる。[Operation] According to the present invention, when an SiOx film is formed on an amorphous silicon film by a low-temperature thin film forming method such as a plasma CVD method or a sputtering method, and then the amorphous silicon film is crystallized by laser irradiation, the laser beam By allowing the absorption to occur only in the silicon film, only the amorphous silicon film can be heated to a high temperature. Therefore, even if there is an insulating substrate with a low melting point under the amorphous silicon film, the amorphous silicon film and the amorphous silicon film can be heated without heating it. The SiO2 film can be formed on the interface with the SiOx film by high-temperature thermal oxidation, and therefore the film quality of the SiO2 film formed on the polysilicon film formed by crystallizing the amorphous silicon film can be improved.
【０００６】[0006]
【実施例】図１〜図５はそれぞれこの発明の一実施例を
適用した薄膜トランジスタの各製造工程を示したもので
ある。そこで、これらの図を順に参照しながら、薄膜ト
ランジスタの製造方法について説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIGS. 1 to 5 each show the manufacturing process of a thin film transistor to which an embodiment of the present invention is applied. Therefore, a method for manufacturing a thin film transistor will be described with reference to these figures in order.
【０００７】まず、図１に示すように、ガラス基板等か
らなる絶縁基板１の上面にプラズマＣＶＤ法によりアモ
ルファスシリコン膜２を数百〜１０００Å程度の厚さに
形成する。次に、アモルファスシリコン膜２の上面にプ
ラズマＣＶＤ法やスパッタ法等の低温薄膜形成方法によ
りゲート絶縁膜の一部となるＳｉＯｘ（ｘ≧２）膜３を
１０００〜２０００Å程度の厚さに形成する。すなわち
、プラズマＣＶＤ法の場合にはＮ２Ｏの流量を大きくし
、スパッタ法の場合にはＯ２の流量を大きくすると、酸
素の過剰なＳｉＯｘ膜３が形成される。First, as shown in FIG. 1, an amorphous silicon film 2 with a thickness of several hundred to 1000 Å is formed on the upper surface of an insulating substrate 1 made of a glass substrate or the like by plasma CVD. Next, a SiOx (x≧2) film 3, which will become part of the gate insulating film, is formed to a thickness of about 1000 to 2000 Å on the top surface of the amorphous silicon film 2 by a low-temperature thin film formation method such as plasma CVD or sputtering. . That is, when the flow rate of N2O is increased in the plasma CVD method and the flow rate of O2 is increased in the case of the sputtering method, an SiOx film 3 containing excess oxygen is formed.
【０００８】次に、波長３０８ｎｍのＸｅＣｌエキシマ
レーザによりエネルギ密度２５０ｍＪ／ｃｍ２でレーザ
照射すると、図２に示すように、アモルファスシリコン
膜２が結晶化してポリシリコン膜４となるとともに、ア
モルファスシリコン膜２とＳｉＯｘ膜３との境界面にＳ
ｉＯ２膜４が形成される。この場合、レーザビームのパ
ルス幅が３０ｎｓｅｃ程度であると、アモルファスシリ
コン膜２のみがレーザビームを吸収し、アモルファスシ
リコン膜２のみが１５００℃以上の高温となり、このた
め低融点の絶縁基板１を加熱することなく、アモルファ
スシリコン膜２とＳｉＯｘ膜３との境界面付近における
アモルファスシリコン膜２がＳｉＯｘ膜３の過剰の酸素
と反応して酸化し、アモルファスシリコン膜２とＳｉＯ
ｘ膜３との境界面にゲート絶縁膜の一部となるＳｉＯ２
膜５が形成される。したがって、この状態では、ＳｉＯ
ｘ膜３とＳｉＯ２膜５とによってゲート絶縁膜６が形成
されることになる。Next, when laser irradiation is performed using a XeCl excimer laser with a wavelength of 308 nm and an energy density of 250 mJ/cm2, the amorphous silicon film 2 crystallizes to become a polysilicon film 4, and the amorphous silicon film 2 and the SiOx film 3.
An iO2 film 4 is formed. In this case, if the pulse width of the laser beam is about 30 nsec, only the amorphous silicon film 2 absorbs the laser beam, and only the amorphous silicon film 2 reaches a high temperature of 1500°C or more, which heats the insulating substrate 1 with a low melting point. The amorphous silicon film 2 near the interface between the amorphous silicon film 2 and the SiOx film 3 reacts with excess oxygen in the SiOx film 3 and oxidizes, causing the amorphous silicon film 2 and
SiO2, which becomes part of the gate insulating film, is placed on the interface with the x film 3.
A membrane 5 is formed. Therefore, in this state, SiO
A gate insulating film 6 is formed by the x film 3 and the SiO2 film 5.
【０００９】次に、図３に示すように、ポリシリコン膜
４のチャネル形成領域７に対応する部分のゲート絶縁膜
６の上面にフォトリソグラフィ法によりフォトレジスト
膜８をパターン形成する。次に、この状態において、フ
ォトレジスト膜８の両側におけるポリシリコン膜４にイ
オン注入装置によりリン（Ｐ）イオンを注入し、不純物
注入領域９を形成する。この後、フォトレジスト膜８を
エッチングして除去する。Next, as shown in FIG. 3, a photoresist film 8 is patterned on the upper surface of the gate insulating film 6 in a portion of the polysilicon film 4 corresponding to the channel forming region 7 by photolithography. Next, in this state, phosphorus (P) ions are implanted into the polysilicon film 4 on both sides of the photoresist film 8 using an ion implantation device to form impurity implanted regions 9. Thereafter, the photoresist film 8 is etched and removed.
【００１０】次に、図４に示すように、波長３０８ｎｍ
のＸｅＣｌエキシマレーザによりエネルギ密度２２０ｍ
Ｊ／ｃｍ２でレーザ照射し、不純物注入領域９における
リンイオンを活性化する。Next, as shown in FIG.
XeCl excimer laser with energy density of 220 m
Laser irradiation is performed at J/cm2 to activate phosphorus ions in the impurity implanted region 9.
【００１１】次に、図５に示すように、ゲート絶縁膜６
の上面にフォトリソグラフィ法によりフォトレジスト膜
（図示せず）をパターン形成し、このフォトレジスト膜
をマスクとして所定の２箇所のゲート絶縁膜６をエッチ
ングして除去し、２つのコンタクトホール１０を形成す
る。次に、ゲート絶縁膜６の上面にスパッタ法によりＡ
ｌからなる金属層を３０００Å程度の厚さに形成し、こ
の金属層の不要な部分をエッチングして除去し、ゲート
電極１１および２つのソース・ドレイン電極１２を形成
するとともに、ソース・ドレイン電極１２をコンタクト
ホール１０を介して不純物注入領域９と接続させる。か
くして、薄膜トランジスタが形成される。Next, as shown in FIG. 5, a gate insulating film 6 is formed.
A photoresist film (not shown) is patterned on the upper surface by photolithography, and using this photoresist film as a mask, the gate insulating film 6 at two predetermined locations is etched and removed to form two contact holes 10. do. Next, A is applied to the upper surface of the gate insulating film 6 by sputtering.
A metal layer consisting of L is formed to a thickness of about 3000 Å, and unnecessary portions of this metal layer are removed by etching to form a gate electrode 11 and two source/drain electrodes 12. is connected to impurity implanted region 9 via contact hole 10. A thin film transistor is thus formed.
【００１２】このように、この薄膜トランジスタでは、
まず図１に示すように、アモルファスシリコン膜２の上
面にＳｉＯｘ膜３をプラズマＣＶＤ法やスパッタ法等の
低温薄膜形成方法により形成し、次いでレーザ照射によ
り図２に示すように、アモルファスシリコン膜２を結晶
化してポリシリコン膜４とするとともに、低融点の絶縁
基板１を加熱することなく、アモルファスシリコン膜２
とＳｉＯｘ膜３との境界面にＳｉＯ２膜４を１５００℃
以上の高温の熱酸化により形成しているので、ＳｉＯ２
膜５を完全に良質で安定な酸化膜とすることができ、ひ
いてはこのＳｉＯ２膜５とＳｉＯｘ膜３とからなるゲー
ト絶縁膜６の膜質を良くすることができる。[0012] Thus, in this thin film transistor,
First, as shown in FIG. 1, an SiOx film 3 is formed on the upper surface of the amorphous silicon film 2 by a low-temperature thin film forming method such as plasma CVD or sputtering, and then, as shown in FIG. is crystallized to form a polysilicon film 4, and an amorphous silicon film 2 is formed without heating the low melting point insulating substrate 1.
SiO2 film 4 is heated at 1500°C on the interface between
Since it is formed by thermal oxidation at a high temperature above, SiO2
The film 5 can be made into a completely high-quality and stable oxide film, and in turn, the film quality of the gate insulating film 6 made of the SiO2 film 5 and the SiOx film 3 can be improved.
【００１３】[0013]
【発明の効果】以上説明したように、この発明によれば
、アモルファスシリコン膜上にＳｉＯｘ膜をプラズマＣ
ＶＤ法やスパッタ法等の低温薄膜形成方法により形成し
、次いでレーザ照射によりアモルファスシリコン膜を結
晶化するとき、レーザビームがアモルファスシリコン膜
のみに吸収されるようにすると、アモルファスシリコン
膜のみを高温化することができ、このためアモルファス
シリコン膜下に低融点の絶縁基板があってもこれを加熱
することなく、アモルファスシリコン膜とＳｉＯｘ膜と
の境界面にＳｉＯ２膜を高温の熱酸化により形成するこ
とができ、したがってアモルファスシリコン膜を結晶化
してなるポリシリコン膜上に形成されるＳｉＯ２膜の膜
質を良くすることができる。As explained above, according to the present invention, a SiOx film is formed on an amorphous silicon film by plasma carbonization.
When an amorphous silicon film is formed using a low-temperature thin film formation method such as the VD method or sputtering method and then crystallized by laser irradiation, if the laser beam is absorbed only by the amorphous silicon film, only the amorphous silicon film will be heated to a high temperature. Therefore, even if there is an insulating substrate with a low melting point under the amorphous silicon film, it is possible to form a SiO2 film on the interface between the amorphous silicon film and the SiOx film by high-temperature thermal oxidation without heating it. Therefore, the quality of the SiO2 film formed on the polysilicon film formed by crystallizing the amorphous silicon film can be improved.
【図１】この発明の一実施例を適用した薄膜トランジス
タの製造に際し、アモルファスシリコン膜の上面にゲー
ト絶縁膜の一部となるＳｉＯｘ膜を形成した状態の断面
図。FIG. 1 is a cross-sectional view of a state in which a SiOx film, which becomes part of a gate insulating film, is formed on the upper surface of an amorphous silicon film when manufacturing a thin film transistor to which an embodiment of the present invention is applied.
【図２】この薄膜トランジスタの製造に際し、アモルフ
ァスシリコン膜の結晶化とアモルファスシリコン膜の所
定の一部の熱酸化のためにエキシマレーザを照射した状
態の断面図。FIG. 2 is a cross-sectional view of a state in which an excimer laser is irradiated for crystallization of the amorphous silicon film and thermal oxidation of a predetermined part of the amorphous silicon film during manufacture of this thin film transistor.
【図３】この薄膜トランジスタの製造に際し、ポリシリ
コン膜のチャネル形成領域を除く部分にリンイオンを注
入した状態の断面図。FIG. 3 is a cross-sectional view of a state in which phosphorus ions are implanted into a portion of a polysilicon film excluding a channel formation region when manufacturing this thin film transistor.
【図４】この薄膜トランジスタの製造に際し、注入した
リンイオンを活性化するためにエキシマレーザを照射し
た状態の断面図。FIG. 4 is a cross-sectional view of a state in which excimer laser is irradiated to activate implanted phosphorus ions during manufacturing of this thin film transistor.
【図５】この薄膜トランジスタの製造に際し、最終的に
ゲート電極およびソース・ドレイン電極を形成した状態
の断面図。FIG. 5 is a cross-sectional view of a state in which a gate electrode and source/drain electrodes are finally formed during manufacturing of this thin film transistor.
１ 絶縁基板 ２ アモルファスシリコン膜 ３ ＳｉＯｘ（ｘ≧２）膜 ４ ポリシリコン膜 ５ ＳｉＯ２膜 ６ ゲート絶縁膜 1 Insulating substrate 2 Amorphous silicon film 3 SiOx (x≧2) film 4 Polysilicon film 5 SiO2 film 6 Gate insulating film
Claims (1)
ＣＶＤ法やスパッタ法等の低温薄膜形成方法によりＳｉ
Ｏｘ（ｘ≧２）膜を形成し、レーザを照射することによ
り、前記アモルファスシリコン膜を結晶化するとともに
前記アモルファスシリコン膜と前記ＳｉＯｘ膜との境界
面にＳｉＯ２膜を形成することを特徴とするアモルファ
スシリコンの結晶化方法。[Claim 1] Si is deposited on an amorphous silicon film by a low-temperature thin film formation method such as plasma CVD or sputtering.
The method is characterized in that an Ox (x≧2) film is formed and the amorphous silicon film is crystallized by laser irradiation, and an SiO2 film is formed on the interface between the amorphous silicon film and the SiOx film. Method of crystallizing amorphous silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8788791A JPH04299519A (en) | 1991-03-27 | 1991-03-27 | Recrystallization of amorphous silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8788791A JPH04299519A (en) | 1991-03-27 | 1991-03-27 | Recrystallization of amorphous silicon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04299519A true JPH04299519A (en) | 1992-10-22 |
Family
ID=13927389
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8788791A Pending JPH04299519A (en) | 1991-03-27 | 1991-03-27 | Recrystallization of amorphous silicon |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04299519A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003086507A (en) * | 2001-09-10 | 2003-03-20 | Semiconductor Energy Lab Co Ltd | Method of manufacturing semiconductor device |
| JP2014160818A (en) * | 2008-07-31 | 2014-09-04 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
-
1991
- 1991-03-27 JP JP8788791A patent/JPH04299519A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003086507A (en) * | 2001-09-10 | 2003-03-20 | Semiconductor Energy Lab Co Ltd | Method of manufacturing semiconductor device |
| JP2014160818A (en) * | 2008-07-31 | 2014-09-04 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
| US9087745B2 (en) | 2008-07-31 | 2015-07-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US9111804B2 (en) | 2008-07-31 | 2015-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP2016001746A (en) * | 2008-07-31 | 2016-01-07 | 株式会社半導体エネルギー研究所 | Semiconductor device |
| JP2019033274A (en) * | 2008-07-31 | 2019-02-28 | 株式会社半導体エネルギー研究所 | Semiconductor device |
| US10937897B2 (en) | 2008-07-31 | 2021-03-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
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