JPS6230314A - Manufacture of crystalline semiconductor thin film - Google Patents

Manufacture of crystalline semiconductor thin film

Info

Publication number
JPS6230314A
JPS6230314A JP16885685A JP16885685A JPS6230314A JP S6230314 A JPS6230314 A JP S6230314A JP 16885685 A JP16885685 A JP 16885685A JP 16885685 A JP16885685 A JP 16885685A JP S6230314 A JPS6230314 A JP S6230314A
Authority
JP
Japan
Prior art keywords
film
si
semiconductor thin
thin film
crystallized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16885685A
Other versions
JP2534980B2 (en
Inventor
Toshiyuki Samejima
Mitsunobu Sekiya
Setsuo Usui
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP60168856A priority Critical patent/JP2534980B2/en
Publication of JPS6230314A publication Critical patent/JPS6230314A/en
Application granted granted Critical
Publication of JP2534980B2 publication Critical patent/JP2534980B2/en
Anticipated expiration legal-status Critical
Application status is Expired - Lifetime legal-status Critical

Links

Abstract

PURPOSE: To obtain a crystalline semiconductor thin film of excellent quality which is crystallized uniformly and has a smooth surface, by a method wherein a thermal strain caused on the occasion of crystallization of a semiconductor thin film is relaxed effectively by a nitride silicon film.
CONSTITUTION: An Si3N4 film (nitride silicon film) 2 having a film thickness of 600Å is formed on a glass substrate 1, for instance, at a substrate temperature of 260°C, for instance, by a plasma CVD method, and then an a-Si:H film (hydrogenated amorphous Si film) 3 is formed thereon. Next, a laser beam 4 of wavelength 308nm and pulse width 35ns generated by an XeCl excimer laser is applied to the a-Si:H film 3 to heat same, and thereby it is crystallized at a normal temperature and formed into a polycrystalline Si film 5. The polycrystalline Si film 5 thus obtained is a film of excellent quality which is crystallized uniformly by a laser energy in the range of 150-250mJ/cm2 and has an excellently smooth surface.
COPYRIGHT: (C)1987,JPO&Japio
JP60168856A 1985-07-31 1985-07-31 The method of manufacturing a crystalline semiconductor thin film Expired - Lifetime JP2534980B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60168856A JP2534980B2 (en) 1985-07-31 1985-07-31 The method of manufacturing a crystalline semiconductor thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60168856A JP2534980B2 (en) 1985-07-31 1985-07-31 The method of manufacturing a crystalline semiconductor thin film

Publications (2)

Publication Number Publication Date
JPS6230314A true JPS6230314A (en) 1987-02-09
JP2534980B2 JP2534980B2 (en) 1996-09-18

Family

ID=15875823

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60168856A Expired - Lifetime JP2534980B2 (en) 1985-07-31 1985-07-31 The method of manufacturing a crystalline semiconductor thin film

Country Status (1)

Country Link
JP (1) JP2534980B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4992393A (en) * 1989-06-01 1991-02-12 Ricoh Company, Ltd. Method for producing semiconductor thin film by melt and recrystallization process
US5254208A (en) * 1990-07-24 1993-10-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US6008078A (en) * 1990-07-24 1999-12-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US6429483B1 (en) 1994-06-09 2002-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
JP2004153232A (en) * 2002-10-30 2004-05-27 Sharp Corp Method for manufacturing semiconductor element and semiconductor element manufactured by the method
US6884698B1 (en) 1994-02-23 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with crystallization of amorphous silicon

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5895814A (en) * 1981-11-30 1983-06-07 Mitsubishi Electric Corp Preparation of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5895814A (en) * 1981-11-30 1983-06-07 Mitsubishi Electric Corp Preparation of semiconductor device

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4992393A (en) * 1989-06-01 1991-02-12 Ricoh Company, Ltd. Method for producing semiconductor thin film by melt and recrystallization process
US5254208A (en) * 1990-07-24 1993-10-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US5716857A (en) * 1990-07-24 1998-02-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US6008078A (en) * 1990-07-24 1999-12-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US6486495B2 (en) 1990-07-24 2002-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US7026200B2 (en) 1990-07-24 2006-04-11 Semiconductor Energy Laboratory Co. Ltd. Method for manufacturing a semiconductor device
US7749819B2 (en) 1994-02-23 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7235828B2 (en) 1994-02-23 2007-06-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with residual nickel from crystallization of semiconductor film
US6884698B1 (en) 1994-02-23 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with crystallization of amorphous silicon
US8330165B2 (en) 1994-06-09 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US7547915B2 (en) 1994-06-09 2009-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having SiOxNy film
US6429483B1 (en) 1994-06-09 2002-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
JP2004153232A (en) * 2002-10-30 2004-05-27 Sharp Corp Method for manufacturing semiconductor element and semiconductor element manufactured by the method

Also Published As

Publication number Publication date
JP2534980B2 (en) 1996-09-18

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