JPH0429626B2 - - Google Patents
Info
- Publication number
- JPH0429626B2 JPH0429626B2 JP58201117A JP20111783A JPH0429626B2 JP H0429626 B2 JPH0429626 B2 JP H0429626B2 JP 58201117 A JP58201117 A JP 58201117A JP 20111783 A JP20111783 A JP 20111783A JP H0429626 B2 JPH0429626 B2 JP H0429626B2
- Authority
- JP
- Japan
- Prior art keywords
- powder
- nitrogen
- sintered body
- silicon nitride
- sintering aid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005245 sintering Methods 0.000 claims description 33
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 22
- -1 nitrogen-containing silane compound Chemical class 0.000 claims description 21
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 20
- 229910000077 silane Inorganic materials 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 14
- 239000012298 atmosphere Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 238000002156 mixing Methods 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 10
- 230000001590 oxidative effect Effects 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000000843 powder Substances 0.000 description 25
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000005452 bending Methods 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000011812 mixed powder Substances 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- RAABOESOVLLHRU-UHFFFAOYSA-N diazene Chemical compound N=N RAABOESOVLLHRU-UHFFFAOYSA-N 0.000 description 2
- 229910000071 diazene Inorganic materials 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000000634 powder X-ray diffraction Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000005049 silicon tetrachloride Substances 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000012772 electrical insulation material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000003891 oxalate salts Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000013001 point bending Methods 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 238000001272 pressureless sintering Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Ceramic Products (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58201117A JPS6096576A (ja) | 1983-10-28 | 1983-10-28 | 窒化珪素焼結体の製造法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58201117A JPS6096576A (ja) | 1983-10-28 | 1983-10-28 | 窒化珪素焼結体の製造法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6096576A JPS6096576A (ja) | 1985-05-30 |
| JPH0429626B2 true JPH0429626B2 (enExample) | 1992-05-19 |
Family
ID=16435681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58201117A Granted JPS6096576A (ja) | 1983-10-28 | 1983-10-28 | 窒化珪素焼結体の製造法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6096576A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2577899B2 (ja) * | 1987-01-28 | 1997-02-05 | 本田技研工業株式会社 | 窒化珪素質焼結体及びその製造法 |
-
1983
- 1983-10-28 JP JP58201117A patent/JPS6096576A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6096576A (ja) | 1985-05-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4612297A (en) | Process for preparation of silicon nitride powder of good sintering property | |
| EP0153000B1 (en) | Refractories of silicon carbide and related materials having a modified silicon nitride bonding phase | |
| JPS6112844B2 (enExample) | ||
| US5773733A (en) | Alumina-aluminum nitride-nickel composites | |
| JPS5913442B2 (ja) | 高純度の型窒化珪素の製造法 | |
| KR100386364B1 (ko) | 반응결합된탄화규소내화물 | |
| US4716028A (en) | Process for preparation of high-type silicon nitride powder | |
| JPH0429626B2 (enExample) | ||
| US8916125B2 (en) | Graphite material for synthesizing semiconductor diamond and semiconductor diamond produced by using the same | |
| US5665661A (en) | Crystallization of grain boundery phases in silicon carbide ceramics | |
| JPS6212663A (ja) | Ｂ４ｃ質複合体およびその製造方法 | |
| JPH01131069A (ja) | 複合常圧焼結成形体 | |
| JPH03261611A (ja) | 窒化けい素複合粉末の製造方法 | |
| US3141737A (en) | Method for the preparation of aluminum nitride refractory material | |
| JPS59217608A (ja) | 立方晶窒化ほう素の合成法 | |
| JPH01131062A (ja) | 複合常圧焼結成形体 | |
| JPS6259599A (ja) | 窒化ケイ素と酸窒化ケイ素よりなる繊維状集合体の製造法 | |
| EP0179670A2 (en) | Production of silicon carbide cobweb whiskers | |
| JPS6227003B2 (enExample) | ||
| JPS6172673A (ja) | 炭化珪素焼結体の製造方法 | |
| JPH01264914A (ja) | 窒化アルミニウム粉末及び粉末組成物の製造方法 | |
| JP2731333B2 (ja) | 窒化珪素焼結体、その製造方法、窒化珪素粉末及びその製造方法 | |
| JP2584252B2 (ja) | β−サイアロン・炭化けい素複合粉末の製造方法 | |
| JPS5950617B2 (ja) | 窒化珪素−炭化珪素組成物の製造法 | |
| JPH082968A (ja) | 窒化ホウ素質焼結体及びその製造方法 |