JPH0429180B2 - - Google Patents

Info

Publication number
JPH0429180B2
JPH0429180B2 JP60050637A JP5063785A JPH0429180B2 JP H0429180 B2 JPH0429180 B2 JP H0429180B2 JP 60050637 A JP60050637 A JP 60050637A JP 5063785 A JP5063785 A JP 5063785A JP H0429180 B2 JPH0429180 B2 JP H0429180B2
Authority
JP
Japan
Prior art keywords
disk
slit
ion
faraday cup
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP60050637A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61211950A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP60050637A priority Critical patent/JPS61211950A/ja
Publication of JPS61211950A publication Critical patent/JPS61211950A/ja
Publication of JPH0429180B2 publication Critical patent/JPH0429180B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP60050637A 1985-03-15 1985-03-15 大電流イオン注入装置に於けるイオン注入量測定装置 Granted JPS61211950A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60050637A JPS61211950A (ja) 1985-03-15 1985-03-15 大電流イオン注入装置に於けるイオン注入量測定装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60050637A JPS61211950A (ja) 1985-03-15 1985-03-15 大電流イオン注入装置に於けるイオン注入量測定装置

Publications (2)

Publication Number Publication Date
JPS61211950A JPS61211950A (ja) 1986-09-20
JPH0429180B2 true JPH0429180B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-05-18

Family

ID=12864471

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60050637A Granted JPS61211950A (ja) 1985-03-15 1985-03-15 大電流イオン注入装置に於けるイオン注入量測定装置

Country Status (1)

Country Link
JP (1) JPS61211950A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2409926B (en) * 2004-01-06 2006-11-29 Applied Materials Inc Ion beam monitoring arrangement
US7132672B2 (en) * 2004-04-02 2006-11-07 Varian Semiconductor Equipment Associates, Inc. Faraday dose and uniformity monitor for plasma based ion implantation
JP2008235044A (ja) * 2007-03-22 2008-10-02 Ihi Corp ビームプロファイルモニター
JP5414515B2 (ja) * 2009-12-24 2014-02-12 キヤノン株式会社 被加工物の製造方法、加工方法、及び加工装置

Also Published As

Publication number Publication date
JPS61211950A (ja) 1986-09-20

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