JPH04276622A - Semiconductor device production method - Google Patents
Semiconductor device production methodInfo
- Publication number
- JPH04276622A JPH04276622A JP3823391A JP3823391A JPH04276622A JP H04276622 A JPH04276622 A JP H04276622A JP 3823391 A JP3823391 A JP 3823391A JP 3823391 A JP3823391 A JP 3823391A JP H04276622 A JPH04276622 A JP H04276622A
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor device
- resin film
- polyimide
- based resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000002161 passivation Methods 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 5
- 239000011737 fluorine Substances 0.000 claims abstract description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 abstract description 10
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 6
- 230000002209 hydrophobic effect Effects 0.000 abstract description 3
- 239000004642 Polyimide Substances 0.000 abstract 4
- 239000011347 resin Substances 0.000 abstract 4
- 229920005989 resin Polymers 0.000 abstract 4
- 239000009719 polyimide resin Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001846 repelling effect Effects 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、半導体装置の製造方法
に関し、特にパッシベーション膜の形成方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for forming a passivation film.
【０００２】0002
【従来の技術】従来の半導体装置の製造方法は図２に示
すように、半導体素子を形成した半導体基板１の上にパ
ッシベーション膜として、窒化シリコン膜５を０．２〜
１．０μｍの厚さに堆積し、窒化シリコン膜５の上にポ
リイミド系樹脂膜２を１．０〜１０．０μｍを厚さに形
成している。2. Description of the Related Art As shown in FIG. 2, a conventional method for manufacturing a semiconductor device is such that a silicon nitride film 5 is deposited as a passivation film on a semiconductor substrate 1 on which a semiconductor element is formed.
A polyimide resin film 2 is formed on the silicon nitride film 5 to a thickness of 1.0 to 10.0 μm.
【０００３】0003
【発明が解決しようとする課題】この従来の半導体装置
の製造方法は、半導体素子のパッシベーション膜として
窒化シリコン膜と有機膜の２層構造を有しているが、窒
化シリコン膜による応力が半導体素子に加わりアルミニ
ウム配線が移動してしまうという問題点がある。[Problems to be Solved by the Invention] This conventional semiconductor device manufacturing method has a two-layer structure of a silicon nitride film and an organic film as a passivation film for a semiconductor element. In addition to this, there is also the problem that the aluminum wiring moves.
【０００４】また、有機膜は、吸湿性があり、水分によ
り半導体素子が腐食してしまうという問題点がある。[0004] Furthermore, organic films are hygroscopic and there is a problem in that semiconductor elements are corroded by moisture.
【０００５】[0005]
【課題を解決するための手段】本発明の半導体装置の製
造方法は、半導体素子を含む内部領域を有する半導体基
板上にパッシベーション膜として有機膜を形成する工程
と、前記有機膜の表面を弗素ガスと反応させて前記有機
膜の表面に弗化物膜を形成する工程とを含んで構成され
る。[Means for Solving the Problems] A method for manufacturing a semiconductor device of the present invention includes the steps of forming an organic film as a passivation film on a semiconductor substrate having an internal region including a semiconductor element, and coating the surface of the organic film with a fluorine gas. and forming a fluoride film on the surface of the organic film.
【０００６】[0006]
【実施例】次に、本発明について図面を参照して説明す
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be explained with reference to the drawings.
【０００７】図１（ａ），（ｂ）は本発明の一実施例を
説明するための半導体チップ断面図である。FIGS. 1A and 1B are cross-sectional views of a semiconductor chip for explaining one embodiment of the present invention.
【０００８】まず、図１（ａ）に示すように、半導体素
子を形成したシリコン基板１の上に、パッシベーション
膜としポリイミド系樹脂膜２を１．０〜１０．０μｍの
厚さに形成する。First, as shown in FIG. 1A, a polyimide resin film 2 as a passivation film is formed to a thickness of 1.0 to 10.0 μm on a silicon substrate 1 on which a semiconductor element is formed.
【０００９】次に、図１（ｂ）に示すように、ポリイミ
ド系樹脂膜２の表面を弗素ガス雰囲気中で処理し、ポリ
イミド系樹脂膜２の表面に弗化物膜３を形成する。Next, as shown in FIG. 1(b), the surface of the polyimide resin film 2 is treated in a fluorine gas atmosphere to form a fluoride film 3 on the surface of the polyimide resin film 2.
【００１０】ここで、ポリイミド系樹脂膜２の表面は弗
化物膜３で覆われるため、表面が親水性から疎水性とな
って水分をはじき、耐湿性を向上させることができる。[0010] Here, since the surface of the polyimide resin film 2 is covered with the fluoride film 3, the surface changes from hydrophilic to hydrophobic, thereby repelling moisture and improving moisture resistance.
【００１１】[0011]
【発明の効果】以上説明したように本発明は、パッシベ
ーション膜として形成した有機膜の表面を弗素雰囲気中
で処理して弗化物膜を形成することにより、表面が疎水
性になり有機膜を耐湿性を向上させるため、耐湿性用の
窒化シリコン膜無くすることができ、半導体素子への応
力、ストレスを緩和することができるという効果で有す
る。Effects of the Invention As explained above, in the present invention, the surface of an organic film formed as a passivation film is treated in a fluorine atmosphere to form a fluoride film, thereby making the surface hydrophobic and making the organic film moisture resistant. In order to improve the performance, the silicon nitride film for moisture resistance can be omitted, and the stress on the semiconductor element can be alleviated.
【図１】本発明の一実施例を説明するための工程順に示
した半導体チップの断面図である。FIG. 1 is a cross-sectional view of a semiconductor chip shown in order of steps for explaining an embodiment of the present invention.
【図２】従来の半導体装置の一例を示す半導体チップの
断面図である。FIG. 2 is a cross-sectional view of a semiconductor chip showing an example of a conventional semiconductor device.
１ シリコン基板 ２ ポリイミド系樹脂膜 ３ 弗化物膜 ４ 窒化シリコン膜 1 Silicon substrate 2 Polyimide resin film 3 Fluoride film 4 Silicon nitride film
Claims (1)
導体基板上にパッシベーション膜として有機膜を形成す
る工程と、前記有機膜の表面を弗素ガスと反応させて前
記有機膜の表面に弗化物膜を形成する工程とを含むこと
を特徴とする半導体装置の製造方法。1. A step of forming an organic film as a passivation film on a semiconductor substrate having an internal region including a semiconductor element, and reacting the surface of the organic film with fluorine gas to form a fluoride film on the surface of the organic film. 1. A method of manufacturing a semiconductor device, the method comprising: forming a semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3823391A JPH04276622A (en) | 1991-03-05 | 1991-03-05 | Semiconductor device production method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3823391A JPH04276622A (en) | 1991-03-05 | 1991-03-05 | Semiconductor device production method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04276622A true JPH04276622A (en) | 1992-10-01 |
Family
ID=12519584
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3823391A Pending JPH04276622A (en) | 1991-03-05 | 1991-03-05 | Semiconductor device production method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04276622A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5780874A (en) * | 1992-08-21 | 1998-07-14 | Fujitsu Limited | Process for forming fluorinated resin or amorphous carbon layer and devices containing same |
-
1991
- 1991-03-05 JP JP3823391A patent/JPH04276622A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5780874A (en) * | 1992-08-21 | 1998-07-14 | Fujitsu Limited | Process for forming fluorinated resin or amorphous carbon layer and devices containing same |
| US6048786A (en) * | 1992-08-21 | 2000-04-11 | Fujitsu Limited | Process for forming fluorinated resin or amorphous carbon layer and devices containing same |
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