JPH04271137A - Semiconductor package for high frequency - Google Patents

Abstract

PURPOSE:To improve characteristics in a high frequency region, and miniaturize a package. CONSTITUTION:Protrusions 11 are formed in the inside of the lid of a semiconductor package, and set so as to be able to come into contact with the bonding area on the surface of a chip and an electrode part of the package. A wiring is formed in the inside the lid of the semiconductor package, so as to connect the bonding area of the chip with the electrode part. The semiconductor package is constituted by combining the lid 10 and a main body 11.

Description

[Detailed description of the invention]

0001

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high frequency semiconductor package, and more particularly to a structure for reducing the size of the package and improving high frequency characteristics.

0002

2. Description of the Related Art FIG. 3 is a perspective view showing the inside of a conventional FET semiconductor package. In the figure, a chip 1 is mounted on a source metallized portion 3 formed inside a semiconductor package 2. As shown in FIG. Further, from a bonding area provided on the chip 1, it is connected to a source metallized portion 3, a gate metallized portion 5, and a drain metallized portion 6 by gold wires 4. Each metallized portion is connected to the outside via a source lead 7, a gate lead 8, and a drain lead 9.

0003

[Problems to be Solved by the Invention] In the case of high-frequency FET elements using conventional semiconductor packages, since the chip is connected to the electrode using a gold wire, stray capacitance and excess There was a problem in that an inductance component was generated, which greatly affected high frequency characteristics.

The present invention has been made to solve the above-mentioned problems, and aims to improve high frequency characteristics and reduce the size of a semiconductor package.

[0005]

[Means for Solving the Problems] A high-frequency semiconductor package according to the present invention is configured such that projections and wiring are provided inside the lid of the semiconductor package so that they can be connected to a chip and an electrode inside the semiconductor package.

[0006]

[Function] The lid of the semiconductor package according to the present invention is configured to have protrusions and wiring on the lid portion of the package so that it can be connected to the chip and the electrodes inside the semiconductor package. The size of can be reduced.

[0007]

[Example] Example 1. Hereinafter, one embodiment of the present invention will be described with reference to the drawings. FIG. 1 is an exploded perspective view of a package body and a lid showing a first embodiment of the present invention, and FIG. 2 is a sectional view of the lid. In the figure, 10 is a lid, and 11 is a current-carrying protrusion provided on the lid 10. Note that the other symbols are the same as those of the conventional device, so the explanation thereof will be omitted.

Next, the operation will be explained. As shown in the figure, a current-carrying projection 11 is provided inside the lid 10 of the semiconductor package. The position of the protrusion 11 is set to match the bonding area on the surface of the chip 1 and the electrode portion of the semiconductor package. Wiring is provided inside the lid 10 of the semiconductor package to connect the electrodes to the bonding areas of the chip 1. The lid 10 and the package body 2 constitute a semiconductor package. As a result, the bonding air and the leads of the chip 1 are electrically connected.

[0009]

As described above, according to the present invention, the signal line is formed on the lid of the semiconductor package and is configured to be connected to the chip and the electrodes inside the package. This has the excellent effect of reducing the size of the package.

[Brief explanation of the drawing]

FIG. 1 is an exploded perspective view of a semiconductor package showing a first embodiment of the present invention.

FIG. 2 is a sectional view taken along line II-II in FIG. 1;

FIG. 3 is a perspective view of a conventional package body.

[Explanation of symbols]

1 Chip 2　Package body 3 Source metallization 5 Gate metallization 6 Drain metallization 10 Lid 11 Protrusion

Claims (1)

[Claims] 1. A protrusion is provided inside a lid of a semiconductor package to fit a bonding area of a chip mounted inside the package body, and a protrusion is provided to fit an electrode part inside the package body, 1. A high frequency semiconductor package, characterized in that signals and bias can be supplied to the chip by wiring inside the lid of the package and connecting the respective protrusions.