JPH0425720B2 - - Google Patents

Info

Publication number
JPH0425720B2
JPH0425720B2 JP8612883A JP8612883A JPH0425720B2 JP H0425720 B2 JPH0425720 B2 JP H0425720B2 JP 8612883 A JP8612883 A JP 8612883A JP 8612883 A JP8612883 A JP 8612883A JP H0425720 B2 JPH0425720 B2 JP H0425720B2
Authority
JP
Japan
Prior art keywords
semiconductor laser
film
laser device
active layer
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP8612883A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59211292A (ja
Inventor
Kunio Ito
Masaru Wada
Juichi Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8612883A priority Critical patent/JPS59211292A/ja
Publication of JPS59211292A publication Critical patent/JPS59211292A/ja
Publication of JPH0425720B2 publication Critical patent/JPH0425720B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP8612883A 1983-05-16 1983-05-16 半導体レ−ザ装置 Granted JPS59211292A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8612883A JPS59211292A (ja) 1983-05-16 1983-05-16 半導体レ−ザ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8612883A JPS59211292A (ja) 1983-05-16 1983-05-16 半導体レ−ザ装置

Publications (2)

Publication Number Publication Date
JPS59211292A JPS59211292A (ja) 1984-11-30
JPH0425720B2 true JPH0425720B2 (US06815460-20041109-C00097.png) 1992-05-01

Family

ID=13878063

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8612883A Granted JPS59211292A (ja) 1983-05-16 1983-05-16 半導体レ−ザ装置

Country Status (1)

Country Link
JP (1) JPS59211292A (US06815460-20041109-C00097.png)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS64785A (en) * 1986-07-29 1989-01-05 Ricoh Co Ltd Manufacture of mask semiconductor laser
JPS63198390A (ja) * 1987-02-13 1988-08-17 Ricoh Co Ltd マスク半導体レ−ザ−の製作方法
JP2688897B2 (ja) * 1987-03-13 1997-12-10 シャープ株式会社 半導体レーザ装置
JPS63228793A (ja) * 1987-03-18 1988-09-22 Fujitsu Ltd 半導体レ−ザ装置
JPS63164265U (US06815460-20041109-C00097.png) * 1987-04-15 1988-10-26
US4910166A (en) * 1989-01-17 1990-03-20 General Electric Company Method for partially coating laser diode facets

Also Published As

Publication number Publication date
JPS59211292A (ja) 1984-11-30

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