JPH042559B2 - - Google Patents

Info

Publication number
JPH042559B2
JPH042559B2 JP60089307A JP8930785A JPH042559B2 JP H042559 B2 JPH042559 B2 JP H042559B2 JP 60089307 A JP60089307 A JP 60089307A JP 8930785 A JP8930785 A JP 8930785A JP H042559 B2 JPH042559 B2 JP H042559B2
Authority
JP
Japan
Prior art keywords
crystal
gaas
single crystal
temperature gradient
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60089307A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61247700A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP8930785A priority Critical patent/JPS61247700A/ja
Publication of JPS61247700A publication Critical patent/JPS61247700A/ja
Publication of JPH042559B2 publication Critical patent/JPH042559B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP8930785A 1985-04-25 1985-04-25 ３−５族化合物半導体の製造方法 Granted JPS61247700A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8930785A JPS61247700A (ja) 1985-04-25 1985-04-25 ３−５族化合物半導体の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8930785A JPS61247700A (ja) 1985-04-25 1985-04-25 ３−５族化合物半導体の製造方法

Publications (2)

Publication Number Publication Date
JPS61247700A JPS61247700A (ja) 1986-11-04
JPH042559B2 true JPH042559B2 (OSRAM) 1992-01-20

Family

ID=13967005

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8930785A Granted JPS61247700A (ja) 1985-04-25 1985-04-25 ３−５族化合物半導体の製造方法

Country Status (1)

Country Link
JP (1) JPS61247700A (OSRAM)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02229797A (ja) * 1989-03-02 1990-09-12 Hitachi Cable Ltd 低転位密度ガリウム砒素単結晶の製造方法
CN115698395A (zh) * 2020-06-12 2023-02-03 同和电子科技有限公司 GaAs晶锭及GaAs晶锭的制造方法、以及GaAs晶圆

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5895699A (ja) * 1981-12-03 1983-06-07 Nec Corp Ｇａａｓ単結晶の育成方法
JPS59131598A (ja) * 1983-01-18 1984-07-28 Sumitomo Electric Ind Ltd ＧａＡｓ単結晶の製造方法

Also Published As

Publication number Publication date
JPS61247700A (ja) 1986-11-04

Similar Documents

Publication Publication Date Title
US4885614A (en) Semiconductor device with crystalline silicon-germanium-carbon alloy
JPH03236218A (ja) 化合物半導体装置およびその製造方法
US4594173A (en) Indium doped gallium arsenide crystals and method of preparation
JP2000103699A (ja) ＧａＡｓ単結晶基板およびそれを用いたエピタキシャルウェハ
US3994755A (en) Liquid phase epitaxial process for growing semi-insulating GaAs layers
JPH042559B2 (OSRAM)
JPH0413319B2 (OSRAM)
US4028147A (en) Liquid phase epitaxial process for growing semi-insulating GaAs layers
Tatsumi et al. Growth and characterization of III–V materials grown by vapor-pressure-controlled Czochralski method: comparison with standard liquid-encapsulated Czochralski materials
JPH11268998A (ja) ＧａＡｓ単結晶インゴットおよびその製造方法ならびにそれを用いたＧａＡｓ単結晶ウエハ
JPH0543679B2 (OSRAM)
Ohtsuka et al. High-purity In0. 53Ga0. 47As layer grown by liquid phase epitaxy
US5215938A (en) Process to obtain semi-insulating single crystalline epitaxial layers of arsenides and phosphides of metals of the group III of the periodic table useful to make electronic devices
JPH02229796A (ja) ｐ型低転位密度ＩｎＰ単結晶基板材料
Nishio et al. Chemical vapor growth of ZnTe on GaAs by the closed-tube method
JPS6265407A (ja) 化合物半導体のエピタキシヤルウエハ
Akai Basic High-Technology Laboratories, Sumitomo Electric Ind., Ltd.
JPH01138190A (ja) ３−５族化合物半導体単結晶の製造方法
CA1271393A (en) Method of manufacturing a semi-insulating single crystal of gallium indium arsenide
KR960005511B1 (ko) GaAs단결정 성장방법
KR950006965B1 (ko) InP(인듐인)계 반도체 결정내에 Zn₃P₂(아연인화합물) 에피택셜 박막을 형성시키는 방법
JP2829403B2 (ja) 化合物半導体の製造方法
JPS5919911B2 (ja) 半絶縁性３−５族化合物単結晶
Imaizumi et al. Semi‐insulation of undoped GaAs epitaxial layers by wafer annealing
JP2737990B2 (ja) 化合物半導体単結晶製造装置