JPH04247644A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH04247644A JPH04247644A JP1319091A JP1319091A JPH04247644A JP H04247644 A JPH04247644 A JP H04247644A JP 1319091 A JP1319091 A JP 1319091A JP 1319091 A JP1319091 A JP 1319091A JP H04247644 A JPH04247644 A JP H04247644A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- silane coupling
- lead frame
- sealing
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 8
- 239000012778 molding material Substances 0.000 claims description 6
- 238000005538 encapsulation Methods 0.000 claims description 3
- 238000007789 sealing Methods 0.000 abstract description 7
- 238000005476 soldering Methods 0.000 abstract description 4
- 238000004891 communication Methods 0.000 abstract description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000003566 sealing material Substances 0.000 abstract 1
- 229910000077 silane Inorganic materials 0.000 abstract 1
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 125000003396 thiol group Chemical group [H]S* 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 239000010425 asbestos Substances 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 229910052570 clay Inorganic materials 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002657 fibrous material Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 230000008642 heat stress Effects 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 229910052895 riebeckite Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000012209 synthetic fiber Substances 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- GQIUQDDJKHLHTB-UHFFFAOYSA-N trichloro(ethenyl)silane Chemical compound Cl[Si](Cl)(Cl)C=C GQIUQDDJKHLHTB-UHFFFAOYSA-N 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- 239000005050 vinyl trichlorosilane Substances 0.000 description 1
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は電気機器、電子機器、通
信機器、計算機器等に用いられる半導体装置に関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device used in electrical equipment, electronic equipment, communication equipment, computing equipment, and the like.
【０００２】0002
【従来の技術】近年、電気、電子機器の高性能化、高信
頼性、生産性向上のため、プラスチックによる封止が行
われているが、得られた半導体装置は実装工程の際、２
６０℃にもなる溶融半田浴に浸漬される。この為、熱ス
トレスで封止樹脂と、デバイス等のリードフレーム界面
に剥離が発生し、耐湿性が大幅に低下するという問題が
あった。[Prior Art] In recent years, plastic encapsulation has been used to improve the performance, reliability, and productivity of electrical and electronic equipment.
It is immersed in a molten solder bath that can reach temperatures as high as 60°C. For this reason, there is a problem in that heat stress causes peeling at the interface between the sealing resin and the lead frame of a device, etc., resulting in a significant drop in moisture resistance.
【０００３】0003
【発明が解決しようとする課題】従来の技術で述べたよ
うに、従来の半導体装置は半田処理後耐湿性が低くなる
欠点がある。本発明は従来の技術における上述の問題点
に鑑みてなされたもので、その目的とするところは、半
田処理後耐湿性に優れた半導体装置を提供することにあ
る。As described in the section of the prior art, conventional semiconductor devices have the disadvantage of low moisture resistance after soldering. The present invention has been made in view of the above-mentioned problems in the conventional technology, and an object thereof is to provide a semiconductor device having excellent moisture resistance after soldering.
【０００４】0004
【課題を解決するための手段】本発明は、シランカップ
リング剤処理したリードフレームを用い、封止用成形材
料で素子を、封止成形したことを特徴とする半導体装置
のため上記目的を達成することが出来たもので、以下本
発明を詳細に説明する。[Means for Solving the Problems] The present invention achieves the above object with a semiconductor device characterized in that a lead frame treated with a silane coupling agent is used and an element is encapsulated with a encapsulation molding material. The present invention will now be described in detail.
【０００５】本発明に用いるシランカップリング剤とし
ては、ビニルトリクロロシラン、ビニルトリスベータメ
トキシエトキシシラン、ガンマアミノプロピルトリエト
キシシラン等のようにシランカップリング剤全般を用い
ることができるが、好ましくはアミノ基、メルカプト基
を含有するものを用いることがより密着性が向上するた
め望ましいことである。リードフレームとしては特に限
定しなく、リードフレーム全般を用いることが出来る。
封止用成形材料としては、エポキシ樹脂系、フェノール
樹脂系、不飽和ポリエステル樹脂系、シリコン樹脂系、
ポリフェニレンサルファイド樹脂系、ポリエチレンテレ
フタレート樹脂系、ポリブチレンテレフタレート樹脂系
、ポリイミド樹脂系等のように樹脂全般を用いることが
できるが、封止用エポキシ樹脂成形材料を用いることが
、より接着性が向上し好ましいことである。。封止用成
形材料には、必要に応じてタルク、クレー、シリカ、炭
酸カルシュウム、水酸化アルミニゥム等の無機質粉末充
填剤や、ガラス繊維、アスベスト繊維、パルプ繊維、合
成繊維、セラミック繊維等の繊維質充填剤を単独又は併
用することができる。リードフレームに対するシランカ
ップリング剤の処理は塗布乾燥、塗布焼付等で処理する
ことができ、とくに限定するものではない。成形につい
ては、圧縮成形、トランスフアー成形、射出成形等で封
止成形するものである。As the silane coupling agent used in the present invention, general silane coupling agents such as vinyltrichlorosilane, vinyltrisbetamethoxyethoxysilane, gamma-aminopropyltriethoxysilane, etc. can be used, but amino It is desirable to use a material containing a mercapto group or a mercapto group because the adhesion is further improved. The lead frame is not particularly limited, and any lead frame can be used. Molding materials for sealing include epoxy resin, phenol resin, unsaturated polyester resin, silicone resin,
Any resin can be used, such as polyphenylene sulfide resin, polyethylene terephthalate resin, polybutylene terephthalate resin, polyimide resin, etc., but using an epoxy resin molding material for sealing improves adhesiveness. This is desirable. . The molding material for sealing may include inorganic powder fillers such as talc, clay, silica, calcium carbonate, and aluminum hydroxide, as well as fibrous materials such as glass fiber, asbestos fiber, pulp fiber, synthetic fiber, and ceramic fiber. Fillers can be used alone or in combination. The lead frame can be treated with the silane coupling agent by coating and drying, coating and baking, and is not particularly limited. Regarding molding, sealing molding is performed by compression molding, transfer molding, injection molding, or the like.
【０００６】以下本発明を実施例に基づいて説明する。The present invention will be explained below based on examples.
【０００７】[0007]
【実施例１】封止用エポキシ樹脂成形材料を用い、アミ
ノ基含有シランカップリング剤でリードフレームを処理
して、素子をトランスファー成形機を用いて金型温度１
７５℃、成形圧力５０Ｋｇ／ｃｍ２ 、硬化時間３分間
で素子を封止成形して半導体装置を得た。[Example 1] Using an epoxy resin molding material for sealing, a lead frame was treated with an amino group-containing silane coupling agent, and the device was molded using a transfer molding machine at a mold temperature of 1.
The element was encapsulated and molded at 75° C. under a molding pressure of 50 kg/cm 2 for 3 minutes to obtain a semiconductor device.
【０００８】[0008]
【実施例２】メルカプト基含有シランカップリング剤を
用いた以外は実施例１と同様に処理して半導体装置を得
た。Example 2 A semiconductor device was obtained in the same manner as in Example 1 except that a mercapto group-containing silane coupling agent was used.
【０００９】[0009]
【比較例】シランカップリング剤で処理しないリードフ
レームを用いた以外は実施例１と同様に処理して半導体
装置を得た。[Comparative Example] A semiconductor device was obtained in the same manner as in Example 1 except that a lead frame not treated with a silane coupling agent was used.
【００１０】実施例１及び２と比較例の性能は、第１表
のようである。密着性は８５℃、８５％ＲＨで１２時間
吸湿処理後、２６０℃の溶融半田で１０秒間処理後、超
音波探傷装置で観察し、密着強度はリード引抜き強度、
耐湿性１８Ｐ、ＳＯＰ、銅フレーム、ペレットＴＥＧで
、超音波測定によるものである。なお粘度は１５０℃で
のものである。The performances of Examples 1 and 2 and the comparative example are shown in Table 1. Adhesion was measured using an ultrasonic flaw detector after 12 hours of moisture absorption treatment at 85°C and 85% RH, and 10 seconds of molten solder treatment at 260°C. Adhesion strength was determined by lead pull-out strength,
Moisture resistance 18P, SOP, copper frame, pellet TEG, ultrasonic measurement. Note that the viscosity is at 150°C.
【００１１】[0011]
【発明の効果】本発明は上述した如く構成されている。
特許請求の範囲に記載した構成を有する半導体装置にお
いては、半田処理後耐湿性が向上する効果を有している
。[Effects of the Invention] The present invention is constructed as described above. The semiconductor device having the structure described in the claims has the effect of improving moisture resistance after soldering.
Claims (1)
フレームを用い、封止用成形材料で素子を、封止成形し
たことを特徴とする半導体装置。1. A semiconductor device characterized in that a lead frame treated with a silane coupling agent is used and an element is encapsulated with a encapsulation molding material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1319091A JPH04247644A (en) | 1991-02-04 | 1991-02-04 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1319091A JPH04247644A (en) | 1991-02-04 | 1991-02-04 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04247644A true JPH04247644A (en) | 1992-09-03 |
Family
ID=11826250
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1319091A Pending JPH04247644A (en) | 1991-02-04 | 1991-02-04 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04247644A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0831985A (en) * | 1994-07-05 | 1996-02-02 | Internatl Business Mach Corp <Ibm> | Semiconductor device and manufacture of semiconductor device |
-
1991
- 1991-02-04 JP JP1319091A patent/JPH04247644A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0831985A (en) * | 1994-07-05 | 1996-02-02 | Internatl Business Mach Corp <Ibm> | Semiconductor device and manufacture of semiconductor device |
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