KR880001538B1 - I.c.chip protection process - Google Patents
I.c.chip protection process Download PDFInfo
- Publication number
- KR880001538B1 KR880001538B1 KR1019850010125A KR850010125A KR880001538B1 KR 880001538 B1 KR880001538 B1 KR 880001538B1 KR 1019850010125 A KR1019850010125 A KR 1019850010125A KR 850010125 A KR850010125 A KR 850010125A KR 880001538 B1 KR880001538 B1 KR 880001538B1
- Authority
- KR
- South Korea
- Prior art keywords
- chip
- substrate
- circuit
- epoxy resin
- amine
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Die Bonding (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
본 발명은 IC칩을 에폭시 수지로 보호하기 위한 방법으로서 좀 더 구체적으로는 IC칩에 에폭시 수지를 적하(適下)하여 경화시킴으로써 반도체 회로를 보호하기 위한 것이다.The present invention is a method for protecting an IC chip with an epoxy resin, and more specifically, to protect a semiconductor circuit by dropping and curing an epoxy resin on an IC chip.
종래는 IC칩을 소형의 프라스틱 케이스로써 패케이지형으로 만들어 사용했기 때문에 연결회로와 부착시키기 위해서는 IC칩으로부터 핀을 다수 인출하여 납땜을 하여 사용하였다.Conventionally, since IC chips are packaged as small plastic cases and used, they are used by soldering a large number of pins from the IC chips to be attached to the connection circuit.
따라서 종래의 방법은 소형의 프라스틱 케이스내에 IC칩을 내장시키고 핀을 외부로 인출한 후 봉합하였기 때문에 작업공정이 복잡하여 생산성이 낮고 제조단가가 높아지는 결점이 있었다.Therefore, in the conventional method, since the IC chip is embedded in a small plastic case and the pin is pulled out and then sealed, the work process is complicated, resulting in low productivity and high manufacturing cost.
본 발명은 이러한 결점을 제거하기 위하여 종래와 같이 패캐이지 형으로 하지 않고 평판형으로 만들어 IC칩위에 에폭시 수지를 적하하여 적당한 온도에서 경화시켜 만들었다.In order to eliminate such defects, the present invention is made into a flat plate instead of a package type as in the prior art, and an epoxy resin is dropped on an IC chip and cured at an appropriate temperature.
본원 발명에 대하여 좀더 상세히 설명하면 다음과 같다.Hereinafter, the present invention will be described in more detail.
기판을 삼염화 에틸알콜에 담가 초음파 세척하여 이물질을 제거한다. 이때 사용하는 기판은 금도금된 것을 사용하는 것이 바람직하다. IC칩을 확대경으로 확대하여 견사한 후 경화제가 첨가된 은분을 IC칩에 붙여 기판에 올려놓고 접착시킨다. 그 다음 기판을 90°-130℃의 오븐에서 10-20분 정도 가열 경화시켜 IC칩이 기판에 완전 고착되도록 한다.The substrate is immersed in ethyl alcohol trichloride and ultrasonically cleaned to remove foreign substances. At this time, it is preferable to use a gold plated substrate. After expanding the IC chip with a magnifying glass and attaching it, attach the silver powder to which the curing agent is added to the IC chip, and place it on the substrate. The substrate is then heat cured in an oven at 90 ° -130 ° C for 10-20 minutes to allow the IC chip to fully adhere to the substrate.
그 다음 본딩기(Bonding Machine)의 초음파 진동을 이용하여 IC회로와 기판의 회로단자를 알루미늄-실리콘 와이어(Al-Si Wire)로 연결시킨다.Then, the ultrasonic terminals of the bonding machine are used to connect the IC circuit and the circuit terminals of the substrate with aluminum-silicon wires.
그 다음 IC칩과 연결회로를 보호하기 위해 에폭시 수지에 아민류 예를들면 메틸아민, 에틸 아민, t-부틸아민, 디에틸아민, 에틸렌디아민 등을 경화제로 2-5부 첨가하여 IC칩 위에 점적하여 경화시킨다. 실온에서도 경화시킬 수 있으나 경화를 빨리 시키기 위해서 오븐에 90-130℃에서 0.5-1시간 동안 열을 가하여 경화시키는 것이 바람직하다. 에폭시수지 코팅은 무용제 타입이기 때문에 경화시 발포되지 않는 장점이 있으며 이온성 불순물이 없고 또한 내열성, 내습성 전기 절연성이 우수하고 기판과의 접촉성이 우수하기 때문에 칩과 연결회로를 안전하게 보호할 수 있다.Then, in order to protect the IC chip and the connection circuit, 2-5 parts of amines such as methylamine, ethyl amine, t-butylamine, diethylamine, ethylenediamine, etc., are added to the epoxy resin by dropping onto the IC chip. Harden. Although it can be cured at room temperature, it is preferable to heat the oven for 0.5-1 hour at 90-130 ° C. to accelerate the curing. Epoxy resin coating has the advantage of not foaming when cured because it is a solvent-free type, and it has no ionic impurities, and has excellent heat resistance, moisture resistance, electrical insulation, and excellent contact with the substrate, thus protecting chips and connection circuits safely. .
[실시예 1]Example 1
기판을 삼염화 에틸로 세척하여 검사한 후 경화제가 첨가된 은분을 IC칩에 붙여 기판에 올려 놓고 접착시킨 다음 95℃의 오븐에 넣고 10분간 가열하여 경화시킨다. 그 다음 본딩기의 초음파 진동을 이용하여 IC회로와 기판의 회로단자를 알루미늄-실리콘 와이어로 연결시킨다.After inspecting the substrate by washing with ethyl trichloride, the silver powder added with the curing agent is attached to the IC chip, placed on the substrate, and then bonded to the substrate. Then, the ultrasonic circuit of the bonding machine is used to connect the IC circuit and the circuit terminals of the board with aluminum-silicon wires.
IC칩과 연결회로에 에폭시수지 100부에 에틸아민 5부를 혼합한 것을 적하하여 100℃의 오븐에 넣고 1시간 동안 경화시킨다.100 parts of epoxy resin and 5 parts of ethylamine were added dropwise to the IC chip and the connecting circuit, and the mixture was placed in an oven at 100 ° C. and cured for 1 hour.
[실시예 2]Example 2
기판을 세척 검사한 후 경화제가 첨가된 은분을 IC칩에 붙여 기판에 올려놓고 접착시킨 다음 100℃의 오븐에 넣고 15분간 가열하여 경화시킨다. 본딩기로 IC회로와 기판의 회로단자를 연결시킨다. IC칩과 연결회로에 에폭시수지 100부에 에틸아민 5부를 가한 것을 적하하여 100℃ 오븐에 넣고 가열하여 경화시킨다.After washing and inspecting the substrate, the silver powder to which the curing agent was added is attached to the IC chip, placed on the substrate, and then bonded to the substrate. The bonding circuit connects the IC circuit and the circuit terminals of the board. 100 parts of epoxy resin was added dropwise to the IC chip and the connection circuit, and the mixture was placed in a 100 ° C. oven and cured by heating.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019850010125A KR880001538B1 (en) | 1985-12-31 | 1985-12-31 | I.c.chip protection process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019850010125A KR880001538B1 (en) | 1985-12-31 | 1985-12-31 | I.c.chip protection process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR870006647A KR870006647A (en) | 1987-07-13 |
| KR880001538B1 true KR880001538B1 (en) | 1988-08-19 |
Family
ID=19244627
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019850010125A KR880001538B1 (en) | 1985-12-31 | 1985-12-31 | I.c.chip protection process |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR880001538B1 (en) |
-
1985
- 1985-12-31 KR KR1019850010125A patent/KR880001538B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR870006647A (en) | 1987-07-13 |
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