JPH0423821B2 - - Google Patents

Info

Publication number
JPH0423821B2
JPH0423821B2 JP57075223A JP7522382A JPH0423821B2 JP H0423821 B2 JPH0423821 B2 JP H0423821B2 JP 57075223 A JP57075223 A JP 57075223A JP 7522382 A JP7522382 A JP 7522382A JP H0423821 B2 JPH0423821 B2 JP H0423821B2
Authority
JP
Japan
Prior art keywords
semiconductor
alloy
wafer
semiconductor device
compound semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57075223A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58192370A (ja
Inventor
Mitsuhiro Mori
Katsutoshi Saito
Takao Mori
Katsuaki Chiba
Masayoshi Kobayashi
Hitoshi Sato
Hiroshi Kato
Masamichi Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57075223A priority Critical patent/JPS58192370A/ja
Publication of JPS58192370A publication Critical patent/JPS58192370A/ja
Publication of JPH0423821B2 publication Critical patent/JPH0423821B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/60Electrodes characterised by their materials
    • H10D64/62Electrodes ohmically coupled to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
JP57075223A 1982-05-07 1982-05-07 半導体装置の製造方法 Granted JPS58192370A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57075223A JPS58192370A (ja) 1982-05-07 1982-05-07 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57075223A JPS58192370A (ja) 1982-05-07 1982-05-07 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58192370A JPS58192370A (ja) 1983-11-09
JPH0423821B2 true JPH0423821B2 (enrdf_load_stackoverflow) 1992-04-23

Family

ID=13570008

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57075223A Granted JPS58192370A (ja) 1982-05-07 1982-05-07 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58192370A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0460531A1 (de) * 1990-06-07 1991-12-11 Siemens Aktiengesellschaft Kontaktmetallisierung auf Halbleitermaterial

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5728944B2 (enrdf_load_stackoverflow) * 1973-12-12 1982-06-19

Also Published As

Publication number Publication date
JPS58192370A (ja) 1983-11-09

Similar Documents

Publication Publication Date Title
US6316792B1 (en) Compound semiconductor light emitter and a method for manufacturing the same
JP3739951B2 (ja) 半導体発光素子およびその製造方法
JP3271475B2 (ja) 電気素子の接合材料および接合方法
US6946312B2 (en) Semiconductor light emitting device and its manufacture
US20110053308A1 (en) Method for the Production of an Optoelectronic Component using Thin-Film Technology
JPH11274562A (ja) 窒化ガリウム系化合物半導体発光素子およびその製造方法
EP0156551B1 (en) Ohmic contact for iii-v semiconductor and method of forming it
US5731224A (en) Method for manufacturing ohmic contacts for compound semiconductors
US4510514A (en) Ohmic contacts for semiconductor devices
GB2221570A (en) Bonding a semiconductor to a heat sink
US6268230B1 (en) Semiconductor light emitting device
US6653215B1 (en) Contact to n-GaN with Au termination
JP2007123841A (ja) 半導体レーザ素子
JP3363343B2 (ja) 半導体装置およびその製造方法
US6320265B1 (en) Semiconductor device with high-temperature ohmic contact and method of forming the same
JP2005340860A (ja) 半導体発光素子
JPH0423821B2 (enrdf_load_stackoverflow)
EP0222395A1 (en) Improvement in electrode structure of photosemiconductor device
JP3427732B2 (ja) 窒化物半導体素子の製造方法
EP1091393A1 (en) Electrode for semiconductor device and its manufacturing method
JPH11204828A (ja) 発光ダイオードの製造方法
JP2003142731A (ja) 発光ダイオード素子及び発光ダイオード装置
JPS59165474A (ja) 半導体発光素子
JPH0888197A (ja) 2−6族化合物半導体用電極
JPS6244837B2 (enrdf_load_stackoverflow)