JP2007123841A - 半導体レーザ素子 - Google Patents
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Abstract
【解決手段】 半田層61が積層される最表面部分で、少なくともリッジ構造部35に不完全接着層31が形成されるので、半田層61を介して取付け部62に半導体レーザ素子1を接着するときに、この不完全接着層31は、半田層61に接着しないか、あるいは不完全な状態で接着するので、半田層61の熱膨張および熱収縮によってリッジ構造部35に均一に応力を与えることができ、リッジ構造部35に発生する歪を低減することができ、レーザ光の偏光特性を向上させることができる。不完全接着層31の両側には、完全接着層33がそれぞれ形成され、半導体レーザ素子1と取付け部2とを機械的に強固に接続することができる。半田層61を半導体レーザ素子1の最表面部の全面にわたって積層することができるので、実装が容易となる。
【選択図】 図1
Description
導電性を有し、前記リッジ導波路よりも外側となり前記半田層が積層される最表面部分で、少なくとも前記リッジ構造部に形成され、前記半田層との接着が不完全となる不完全接着層と、
導電性を有し、前記リッジ導波路よりも外側となり前記半田層が積層される最表面部分で、前記半導体基板の厚み方向および前記リッジ導波路の延びる方向に垂直な方向において、前記不完全接着層の両側にそれぞれ形成され、前記半田層と接着する完全接着層とを含むことを特徴とする半導体レーザ素子である。
前記半導体基板の厚み方向および前記リッジ導波路の延びる方向に垂直な方向において中央に形成される第1の不完全接着層と、
前記半導体基板の厚み方向および前記リッジ導波路の延びる方向に垂直な方向において前記第1の不完全接着層の両側にそれぞれ形成され、前記半田層を形成する半田材との濡れ性が、前記第1の不完全接着層と前記完全接着層との間の性質を有する第2の不完全接着層とを含むことを特徴とする。
前記第2の不完全接着層は、プラチナ(Pt)によって形成され、
前記完全接着層は、金(Au)によって形成されることを特徴とする。
前記凹所のテラス部寄りには、前記完全接着層が形成されることを特徴とする。
前記下地金属層は、金(Au)から成り、めっきによって形成されるめっき電極層と、予め定める金属から成る第1の電極層と、金(Au)から成る第2の電極層とが順に積層されて形成されることを特徴とする。
2 半導体基板
7 リッジ部
8 テラス部
27,113 めっき電極層
31 不完全接着層
33 完全接着層
35 リッジ構造部
60,160 半導体レーザ装置
112 下地電極層
113 第1の電極層
114 第2の電極層
Claims (13)
- 半導体基板に設けられるストライプ状のリッジ導波路を含むリッジ構造部を有し、取付け部に半田層を介して接着される半導体レーザ素子であって、
導電性を有し、前記リッジ導波路よりも外側となり前記半田層が積層される最表面部分で、少なくとも前記リッジ構造部に形成され、前記半田層との接着が不完全となる不完全接着層と、
導電性を有し、前記リッジ導波路よりも外側となり前記半田層が積層される最表面部分で、前記半導体基板の厚み方向および前記リッジ導波路の延びる方向に垂直な方向において、前記不完全接着層の両側にそれぞれ形成され、前記半田層と接着する完全接着層とを含むことを特徴とする半導体レーザ素子。 - 前記不完全接着層は、
前記半導体基板の厚み方向および前記リッジ導波路の延びる方向に垂直な方向において中央に形成される第1の不完全接着層と、
前記半導体基板の厚み方向および前記リッジ導波路の延びる方向に垂直な方向において前記第1の不完全接着層の両側にそれぞれ形成され、前記半田層を形成する半田材との濡れ性が、前記第1の不完全接着層と前記完全接着層との間の性質を有する第2の不完全接着層とを含むことを特徴とする請求項1記載の半導体レーザ素子。 - 前記第1の不完全接着層は、モリブデン(Mo)によって形成され、
前記第2の不完全接着層は、プラチナ(Pt)によって形成され、
前記完全接着層は、金(Au)によって形成されることを特徴とする請求項2記載の半導体レーザ素子。 - 前記半導体基板の厚み方向および前記リッジ導波路の延びる方向に垂直な方向において、前記リッジ導波路の両側に、前記リッジ導波路から予め定める距離離間して形成され、リッジ導波路との間に凹所を形成するテラス部を有することを特徴とする請求項1〜3のいずれか1つに記載の半導体レーザ素子。
- 前記凹所のリッジ導波路寄りには、前記不完全接着層が形成され、
前記凹所のテラス部寄りには、前記完全接着層が形成されることを特徴とする請求項4記載の半導体レーザ素子。 - 前記不完全接着層のうち前記凹所に形成される部分は、リッジ導波路とテラス部との間で、リッジ導波路から、リッジ導波路とテラス部との間の距離の30%以上かつ50%未満の範囲にわたって形成されることを特徴とする請求項5記載の半導体レーザ素子。
- 前記完全接着層のうち前記凹所に形成される部分は、リッジ導波路とテラス部との間で、テラス部から、リッジ導波路とテラス部との間の距離の50%以下の範囲に形成されることを特徴とする請求項5または6記載の半導体レーザ素子。
- 金(Au)によって形成され、かつ前記完全接着層および前記不完全接着層が積層される下地金属層を有することを特徴とする請求項1〜7のいずれか1つに記載の半導体レーザ素子。
- 前記完全接着層および前記不完全接着層が積層される下地金属層を有し、
前記下地金属層は、金(Au)から成り、めっきによって形成されるめっき電極層と、予め定める金属から成る第1の電極層と、金(Au)から成る第2の電極層とが順に積層されて形成されることを特徴とする請求項1〜7のいずれ1つに記載の半導体レーザ素子。 - 前記第1の電極層を形成する予め定める金属は、モリブデン(Mo)、白金(Pt)、白金モリブデン(MoPt)およびチタン(Ti)から成る群から選ばれることを特徴とする請求項9記載の半導体レーザ素子。
- 前記第1および第2の電極層は、スパッタリング法によって連続成膜されて形成されることを特徴とする請求項10記載の半導体レーザ素子。
- 前記下地金属層の厚みは、0.5μm以上かつ5.0μm未満に選ばれることを特徴とする請求項8〜11のいずれか1つに記載の半導体レーザ素子。
- 前記半導体基板を挟んで前記リッジ構造部とは反対側の表面部に、金(Au)によって形成される裏面金属層を有することを特徴とする請求項8〜12のいずれか1つに記載の半導体レーザ素子。
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JP2006246157A JP4908982B2 (ja) | 2005-09-30 | 2006-09-11 | 半導体レーザ素子 |
US11/541,326 US20070076772A1 (en) | 2005-09-30 | 2006-09-28 | Semiconductor laser device |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010010509A (ja) * | 2008-06-30 | 2010-01-14 | Opnext Japan Inc | 半導体レーザ装置 |
JP2011108932A (ja) * | 2009-11-19 | 2011-06-02 | Opnext Japan Inc | 光半導体装置 |
JP2016082050A (ja) * | 2014-10-16 | 2016-05-16 | ウシオオプトセミコンダクター株式会社 | 光半導体装置 |
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JP5593163B2 (ja) * | 2010-08-18 | 2014-09-17 | 昭和電工株式会社 | 発光ダイオード及び発光ダイオードランプ |
JP6858804B2 (ja) * | 2018-06-08 | 2021-04-14 | シャープ株式会社 | 半導体レーザ素子 |
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JPS59165474A (ja) * | 1983-03-10 | 1984-09-18 | Nec Corp | 半導体発光素子 |
JPH0964479A (ja) * | 1995-08-28 | 1997-03-07 | Mitsubishi Electric Corp | 半導体レーザ装置,及びその製造方法 |
JP2002057401A (ja) * | 2000-08-10 | 2002-02-22 | Sony Corp | 半導体レーザおよび半導体装置 |
JP2003023200A (ja) * | 2001-07-09 | 2003-01-24 | Mitsubishi Electric Corp | 半導体レーザ装置 |
JP2008021762A (ja) * | 2006-07-12 | 2008-01-31 | Nec Electronics Corp | 半導体レーザ素子および半導体レーザ装置 |
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US6075800A (en) * | 1998-05-05 | 2000-06-13 | Nortel Networks Corporation | Bonding ridge structure laser diodes to substrates |
JP2002314184A (ja) * | 2001-04-11 | 2002-10-25 | Nec Corp | 光半導体モジュール |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59165474A (ja) * | 1983-03-10 | 1984-09-18 | Nec Corp | 半導体発光素子 |
JPH0964479A (ja) * | 1995-08-28 | 1997-03-07 | Mitsubishi Electric Corp | 半導体レーザ装置,及びその製造方法 |
JP2002057401A (ja) * | 2000-08-10 | 2002-02-22 | Sony Corp | 半導体レーザおよび半導体装置 |
JP2003023200A (ja) * | 2001-07-09 | 2003-01-24 | Mitsubishi Electric Corp | 半導体レーザ装置 |
JP2008021762A (ja) * | 2006-07-12 | 2008-01-31 | Nec Electronics Corp | 半導体レーザ素子および半導体レーザ装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2010010509A (ja) * | 2008-06-30 | 2010-01-14 | Opnext Japan Inc | 半導体レーザ装置 |
JP2011108932A (ja) * | 2009-11-19 | 2011-06-02 | Opnext Japan Inc | 光半導体装置 |
JP2016082050A (ja) * | 2014-10-16 | 2016-05-16 | ウシオオプトセミコンダクター株式会社 | 光半導体装置 |
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US20070076772A1 (en) | 2007-04-05 |
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