JPH04233719A - Manufacturing method of semiconductor integrated circuit - Google Patents

Manufacturing method of semiconductor integrated circuit

Info

Publication number
JPH04233719A
JPH04233719A JP21926591A JP21926591A JPH04233719A JP H04233719 A JPH04233719 A JP H04233719A JP 21926591 A JP21926591 A JP 21926591A JP 21926591 A JP21926591 A JP 21926591A JP H04233719 A JPH04233719 A JP H04233719A
Authority
JP
Japan
Prior art keywords
integrated circuit
manufacturing method
semiconductor integrated
thin film
process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP21926591A
Other versions
JPH0775221B2 (en
Inventor
Michael F Brady
Ii John K Dorey
Jr Aubrey L Helms
Original Assignee
American Teleph & Telegr Co <Att>
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US562874 priority Critical
Priority to US07/562,874 priority patent/US5066615A/en
Application filed by American Teleph & Telegr Co <Att> filed Critical American Teleph & Telegr Co <Att>
Publication of JPH04233719A publication Critical patent/JPH04233719A/en
Publication of JPH0775221B2 publication Critical patent/JPH0775221B2/en
Anticipated expiration legal-status Critical
Application status is Expired - Fee Related legal-status Critical

Links

Abstract

PURPOSE: To provide an integrated circuit process using a highly adhesive and chemically inert antireflective film consistent to other process.
CONSTITUTION: An antireflective film 21 used in an integrated circuit is an X-silicon nitride thin film; where X is a metal selected among Ti, Va, Cr, Zr, Nb, Mo, Hf, Ta and W. This thin film is pref. formed by the sputtering in an N-contg. atmosphere.
COPYRIGHT: (C)1992,JPO
JP3219265A 1989-10-23 1991-08-06 A method of manufacturing a semiconductor integrated circuit Expired - Fee Related JPH0775221B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US562874 1990-08-06
US07/562,874 US5066615A (en) 1989-10-23 1990-08-06 Photolithographic processes using thin coatings of refractory metal silicon nitrides as antireflection layers

Publications (2)

Publication Number Publication Date
JPH04233719A true JPH04233719A (en) 1992-08-21
JPH0775221B2 JPH0775221B2 (en) 1995-08-09

Family

ID=24248163

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3219265A Expired - Fee Related JPH0775221B2 (en) 1989-10-23 1991-08-06 A method of manufacturing a semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPH0775221B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4442648A1 (en) * 1993-12-28 1995-06-29 Mitsubishi Electric Corp Semiconductor component mfr. is subsequent steps

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4955280A (en) * 1972-08-23 1974-05-29
JPS5812329A (en) * 1981-07-16 1983-01-24 Fujitsu Ltd Manufacture of semiconductor device
JPS61185928A (en) * 1985-02-14 1986-08-19 Nippon Telegr & Teleph Corp <Ntt> Pattern forming method
JPS62277736A (en) * 1986-05-27 1987-12-02 Nippon Telegr & Teleph Corp <Ntt> Heat treatment method for compound semiconductor
JPS63132475A (en) * 1986-11-25 1988-06-04 Nippon Telegr & Teleph Corp <Ntt> Thin film and manufacture thereof
JPH0276219A (en) * 1988-09-12 1990-03-15 Sony Corp Formation of wiring
JPH02197121A (en) * 1989-01-26 1990-08-03 Oki Electric Ind Co Ltd Method of forming metal silicide for semiconductor element

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4955280A (en) * 1972-08-23 1974-05-29
JPS5812329A (en) * 1981-07-16 1983-01-24 Fujitsu Ltd Manufacture of semiconductor device
JPS61185928A (en) * 1985-02-14 1986-08-19 Nippon Telegr & Teleph Corp <Ntt> Pattern forming method
JPS62277736A (en) * 1986-05-27 1987-12-02 Nippon Telegr & Teleph Corp <Ntt> Heat treatment method for compound semiconductor
JPS63132475A (en) * 1986-11-25 1988-06-04 Nippon Telegr & Teleph Corp <Ntt> Thin film and manufacture thereof
JPH0276219A (en) * 1988-09-12 1990-03-15 Sony Corp Formation of wiring
JPH02197121A (en) * 1989-01-26 1990-08-03 Oki Electric Ind Co Ltd Method of forming metal silicide for semiconductor element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4442648A1 (en) * 1993-12-28 1995-06-29 Mitsubishi Electric Corp Semiconductor component mfr. is subsequent steps
US5595938A (en) * 1993-12-28 1997-01-21 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor device

Also Published As

Publication number Publication date
JPH0775221B2 (en) 1995-08-09

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees