JPH042152A - Resin-sealed semiconductor device, and manufacture thereof - Google Patents

Resin-sealed semiconductor device, and manufacture thereof

Info

Publication number
JPH042152A
JPH042152A JP10170190A JP10170190A JPH042152A JP H042152 A JPH042152 A JP H042152A JP 10170190 A JP10170190 A JP 10170190A JP 10170190 A JP10170190 A JP 10170190A JP H042152 A JPH042152 A JP H042152A
Authority
JP
Japan
Prior art keywords
resin
semiconductor device
semiconductor element
sealing
leads
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10170190A
Other languages
Japanese (ja)
Inventor
Ryuichiro Mori
隆一郎 森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10170190A priority Critical patent/JPH042152A/en
Publication of JPH042152A publication Critical patent/JPH042152A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
    • B29C45/14639—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
    • B29C45/14655—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape

Abstract

PURPOSE:To provide a resin-sealed semiconductor device with a reliable sensor contained in a less expensive package by providing a recess in the mold resin to expose the sensor part to open air. CONSTITUTION:A semiconductor device 1A has a sensor part 1a, the surface of which is coated with releasable resin 14 such as vinyl resin or acrylic resin. The semiconductor device is molded by transfer molding with sealing resin 13 that is supplied through a port 17 of a molding die 16 having a projection 15 to be in contact with the resin 14. The resin 14 is removed by acetone to form a recess in which the sensor part 1a is exposed to open air.

Description

【発明の詳細な説明】 ［産業上の利用分野］ この発明は、樹脂封止型半導体装置及びその製造方法に
関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a resin-sealed semiconductor device and a method for manufacturing the same.

［従来の技術〕 第６図は従来の樹脂封止型半導体装置に使用される半導
体素子を示す平面図であり、図において、半導体素子（
１）には、外気にさらされて大気圧、光量等をセンシン
グするセンシング部（１ａ）が設けられている。このセ
ンシング部（１ａ）を囲んで、補償回路、Ａ／Ｄコンバ
ータ、マイクロプロセッサ等の周辺回路（１ｂ）や電極
（１ｃ）が設けられている。[Prior Art] FIG. 6 is a plan view showing a semiconductor element used in a conventional resin-sealed semiconductor device.
1) is provided with a sensing section (1a) that is exposed to the outside air and senses atmospheric pressure, light intensity, etc. Surrounding this sensing portion (1a), peripheral circuits (1b) such as a compensation circuit, an A/D converter, and a microprocessor, and electrodes (1c) are provided.

第７図は、上記半導体素子（１）を組み立てた従来の缶
タイプのパッケージ構造をもつ半導体装置を示す断面図
であり、第８図はその斜視図である。FIG. 7 is a sectional view showing a semiconductor device having a conventional can-type package structure in which the semiconductor element (1) is assembled, and FIG. 8 is a perspective view thereof.

これらの図において、半導体素子（１）はグイボンディ
ング材（２）によりベース（３）に載置、固着されてお
り、電極（１ｃ）とリード（４）とはワイヤ（５）によ
り電気的に接続されている。リード（４）は絶縁材（６
）によりベース（３）に保持されている。半導体素子（
１）、ワイヤ（５）、リード（４）等は、上部に開口部
（７）が設けられたキャップ（８）に覆われてその内部
に収容されている。なお、キャップ（８）は接合材（９
）によってベース（３）に固定されている。In these figures, a semiconductor element (1) is placed and fixed on a base (3) by a bonding material (2), and an electrode (1c) and a lead (4) are electrically connected by a wire (5). It is connected. The lead (4) is made of insulating material (6
) on the base (3). Semiconductor element (
1), wires (5), leads (4), etc., are covered and housed inside a cap (8) having an opening (7) at the top. Note that the cap (8) is made of bonding material (9
) is fixed to the base (3).

従来の樹脂封止型半導体装置は上述したように構成され
、半導体素子（１）のセンシング部（１ａ）は、開口部
（７）を介して外気と接している。A conventional resin-sealed semiconductor device is configured as described above, and the sensing portion (1a) of the semiconductor element (1) is in contact with the outside air through the opening (7).

［発明が解決しようとする課題］ 上述したような樹脂封止型半導体装置では、センシング
部（１ａ）以外の周辺回路（ｌｂ）や電極（ＩＣ）だけ
でなく、ワイヤ（５）やリード（４）等の部材まで外気
にさらされるため、周辺回路（１ｂ）等が腐食し、半導
体装置の信頼性が低下するという問題点があった。また
、従来の装置ではキャップ（８）、ベース（３）等が金
属製で高価であるといったコスト上の問題や、組み立て
工程が多く装置が複雑となり生産性が悪いという問題点
があった。[Problems to be Solved by the Invention] In the resin-sealed semiconductor device as described above, not only peripheral circuits (lb) and electrodes (IC) other than the sensing part (1a) but also wires (5) and leads (4) ) and other members are exposed to the outside air, causing corrosion of the peripheral circuit (1b) and other components, resulting in a problem that the reliability of the semiconductor device is reduced. In addition, the conventional device has a cost problem in that the cap (8), base (3), etc. are made of metal and is expensive, and the device is complicated due to many assembly steps, resulting in poor productivity.

この発明は、このような問題点を解決するためになされ
たもので、外気にさらされるセンシング部を持つ半導体
素子の信頼性が高く安価なパッケージ構造の樹脂封止型
半導体装置及びその製造方法を得ることを目的とする。The present invention was made to solve these problems, and provides a resin-sealed semiconductor device with a highly reliable and inexpensive package structure for a semiconductor element having a sensing portion exposed to the outside air, and a method for manufacturing the same. The purpose is to obtain.

［課題を解決するための手段］ この発明に係る半導体装置は、半導体素子上に設けられ
たセンシング部が外気にさらされるように、センシング
部表面の封止樹脂に凹部が設けられたものである。[Means for Solving the Problems] In a semiconductor device according to the present invention, a recess is provided in the sealing resin on the surface of the sensing portion so that the sensing portion provided on the semiconductor element is exposed to the outside air. .

また、この発明の別の発明に係る半導体装置の製造方法
は、半導体素子上の表面を外気にさらす必要のあるセン
シング部を、封止樹脂に侵されにくくかつ後の工程で溶
剤によって除去できる樹脂でコーティングし、半導体素
子をリードフレームに載置してワイヤで接続した後、コ
ーティング部に接触する部分を持った金型を用いてトラ
ンスファー樹脂成形した後、コーティング部を溶剤で除
去したもので、センシング部のみ外気にさらされる凹部
を有するものである。In addition, in a method for manufacturing a semiconductor device according to another aspect of the present invention, a sensing portion that requires exposing the surface of a semiconductor element to outside air is formed using a resin that is not easily corroded by the sealing resin and that can be removed by a solvent in a later process. After coating the semiconductor element with a lead frame and connecting it with wires, transfer resin molding is performed using a mold with a part that contacts the coating part, and then the coating part is removed with a solvent. It has a concave portion where only the sensing portion is exposed to the outside air.

［作　用］ この発明においては、トランスファー成形樹脂を用いる
ので、外気にさらす必要のあるセンシング部以外の回路
は、封止樹脂で覆われているので、腐食を防ぎ、半導体
装置の信頼性を高めることができると共に、半導体装置
を安価にかつ簡単な工程で製造することができる。[Function] In this invention, since transfer molding resin is used, the circuits other than the sensing part that need to be exposed to the outside air are covered with sealing resin, which prevents corrosion and increases the reliability of the semiconductor device. In addition, the semiconductor device can be manufactured at low cost and through a simple process.

［実施例コ 第１図及び第２図はこの発明の一実施例による樹脂封止
型半導体装置を示す断面図及び斜視図であり、第３Ａ図
及び第３Ｂ図は上記半導体装置に用いる半導体素子の平
面図及び概略側面図である。Embodiment FIGS. 1 and 2 are a cross-sectional view and a perspective view showing a resin-sealed semiconductor device according to an embodiment of the present invention, and FIGS. 3A and 3B are semiconductor elements used in the above semiconductor device. FIG. 2 is a plan view and a schematic side view of FIG.

これらの図において、（１ａ）、（１ｂ）、（ＩＣ）、
（２）及び（５）は従来の半導体装置におけるものと同
一である。半導体素子（ＩＡ）はボンディング材（２）
によりリードフレーム（１０）のダイパッド（１１）に
固着されており、半導体素子（ＩＡ）とリード（１２）
とはワイヤ（５）により電気的に接続されている。In these figures, (1a), (1b), (IC),
(2) and (5) are the same as those in conventional semiconductor devices. Semiconductor element (IA) is bonding material (2)
is fixed to the die pad (11) of the lead frame (10), and the semiconductor element (IA) and the lead (12)
and are electrically connected by a wire (5).

上述したように構成された半導体装置の製造方法は、ま
ず、半導体素子（ＩＡ）のセンシング部（１ａ）の表面
に、封止樹脂（１３）を侵すことなく後の工程で除去す
ることができるコーティング樹脂（１４）例えばビニル
系樹脂、アクリル系樹脂をコーティングする。次いで、
半導体素子（ＩＡ）をダイパッド（１１）上にダイボン
ド材（２）で載置、固着し、リード（１２〉と半導体素
子（１ａ）とをワイヤ（５）により電気的に接続する。In the method for manufacturing a semiconductor device configured as described above, first, the sealing resin (13) can be removed in a later step from the surface of the sensing portion (1a) of the semiconductor element (IA) without damaging the sealing resin (13). Coating resin (14): Coat with vinyl resin or acrylic resin. Then,
The semiconductor element (IA) is placed and fixed on the die pad (11) with a die bonding material (2), and the leads (12> and the semiconductor element (1a) are electrically connected by wires (5).

次に、第４図に示すように、コーティング樹脂（１４）
に接触する凸部（１５）を有する封止金型（１６）を用
いて、注入口（１７）から封止樹脂（１３）を封入する
ことにより、トランスファー成形する。第５図に成形さ
れた半導体装置の断面図を示す６次いで、アセトン等の
溶剤を用いてコーティング樹脂（１４）を除去すると、
第１図に示した半導体装置が得られる。この半導体装置
には、第２図に示すように、センシング部（１ａ）が外
気にさらされるように封止樹脂（１３）が成形されてい
ない凹部が設けられている。Next, as shown in FIG. 4, the coating resin (14)
Transfer molding is performed by sealing the sealing resin (13) through the injection port (17) using a sealing mold (16) having a convex portion (15) that contacts the mold. FIG. 5 shows a cross-sectional view of the molded semiconductor device 6 Next, when the coating resin (14) is removed using a solvent such as acetone,
The semiconductor device shown in FIG. 1 is obtained. As shown in FIG. 2, this semiconductor device is provided with a recessed portion in which the sealing resin (13) is not molded so that the sensing portion (1a) is exposed to the outside air.

［発明の効果］ この発明は、以上説明したとおり、半導体素子の表面の
一部にコーディング樹脂を施し、この半導体素子をダイ
パッドに載置し、上記半導体素子とリードとをワイヤで
電気的に接続し、上記コーティング樹脂に接触する部分
を設けた金型を用いて上記半導体素子、ダイパッド、リ
ード及びワイヤを封止樹脂で封止し、次いで上記コーテ
ィング樹脂を溶剤で除去するので、センシング部のみ外
気にさらされる凹部を設けた樹脂封止型半導体装置が得
られ、信頼性の高い装置が安価にかつ簡単な工程で製造
することができるという効果を奏する。[Effects of the Invention] As explained above, the present invention applies coating resin to a part of the surface of a semiconductor element, places this semiconductor element on a die pad, and electrically connects the semiconductor element and leads with wires. Then, the semiconductor element, die pad, leads, and wires are sealed with sealing resin using a mold that has a part that comes into contact with the coating resin, and then the coating resin is removed with a solvent, so that only the sensing part is exposed to the outside air. A resin-sealed semiconductor device having a recessed portion exposed to water is obtained, and a highly reliable device can be manufactured at low cost and through a simple process.

【図面の簡単な説明】[Brief explanation of drawings]

第１図及び第２図はこの発明の一実施例による樹脂封止
型半導体装置を示す断面図及び斜視図、第３Ａ図及び第
３Ｂ図はこの発明の半導体装置に用いる半導体素子の平
面図及び概略側面図、第４図は封止金型を用いて半導体
装置をトランスファー成形した状態を示す断面図、第５
図は成形された半導体装置を示す断面図、第６図は従来
の樹脂封止型半導体装置に使用される半導体素子を示す
平面図、第７図及び第８図は従来の缶タイプの半導体装
置を示す断面図及び斜視図である。 図において、（ＩＡ）は半導体素子、（１ａ）はセンシ
ング部、（１ｂ）は周辺回路、（ｌｃ）は１ａ極、（２
）はグイボンディング材、（３）はベース、（４）はリ
ード、（５）はワイヤ、（６）は絶縁材、（１０）はリ
ードフレーム、（１１）はダイパッド、（１２）はリー
ド、（１３）は封止樹脂、（１４）はコーティング樹脂
、（１５）は凸部、（１６）は封止金型、（１７）は注
入口である。 なお、各図中、同一符号は同一または相当部分を示す。1 and 2 are a sectional view and a perspective view showing a resin-sealed semiconductor device according to an embodiment of the present invention, and FIGS. 3A and 3B are a plan view and a perspective view of a semiconductor element used in the semiconductor device of the present invention. A schematic side view, FIG. 4 is a sectional view showing a state in which a semiconductor device is transfer molded using a sealing mold, and FIG.
The figure is a cross-sectional view showing a molded semiconductor device, FIG. 6 is a plan view showing a semiconductor element used in a conventional resin-sealed semiconductor device, and FIGS. 7 and 8 are conventional can-type semiconductor devices. FIG. 2 is a cross-sectional view and a perspective view. In the figure, (IA) is the semiconductor element, (1a) is the sensing section, (1b) is the peripheral circuit, (lc) is the 1a pole, (2
) is Gui bonding material, (3) is base, (4) is lead, (5) is wire, (6) is insulating material, (10) is lead frame, (11) is die pad, (12) is lead, (13) is a sealing resin, (14) is a coating resin, (15) is a convex portion, (16) is a sealing mold, and (17) is an injection port. In each figure, the same reference numerals indicate the same or corresponding parts.

Claims (2)

【特許請求の範囲】[Claims] （１）表面が外気にさらされるセンシング部が設けられ
た半導体素子と、この半導体素子を載置するダイパッド
と、このダイパッドのほぼ同一平面上の周囲に配置され
たリードと、上記半導体素子と上記リードとを電気的に
接続するワイヤと、これら半導体素子、ダイパッド、リ
ード及びワイヤを封止する封止樹脂とを備えた半導体装
置であって、上記センシング部が外気にさらされるよう
にセンシング部表面の封止樹脂に凹部が設けられたこと
を特徴とする樹脂封止型半導体装置。(1) A semiconductor element provided with a sensing portion whose surface is exposed to the outside air, a die pad on which this semiconductor element is placed, leads arranged around the die pad on substantially the same plane, the semiconductor element and the above. A semiconductor device comprising wires for electrically connecting leads and a sealing resin for sealing these semiconductor elements, die pads, leads, and wires, the surface of the sensing part being exposed to the outside air. A resin-sealed semiconductor device characterized in that a recess is provided in the sealing resin. （２）半導体素子の表面の一部にコーティング樹脂を施
し、この半導体素子をダイパッドに載置し、上記半導体
素子とリードとをワイヤで電気的に接続し、上記コーテ
ィング樹脂に接触する部分を設けた金型を用いて上記半
導体素子、ダイパッド、リード及びワイヤを封止樹脂で
封止し、次いで上記コーティング樹脂を溶剤で除去する
ことを特徴とする樹脂封止型半導体装置の製造方法。(2) Apply coating resin to a part of the surface of the semiconductor element, place this semiconductor element on a die pad, electrically connect the semiconductor element and leads with wires, and provide a part that comes into contact with the coating resin. A method of manufacturing a resin-sealed semiconductor device, comprising: sealing the semiconductor element, die pad, leads, and wires with a sealing resin using a mold, and then removing the coating resin with a solvent.
JP10170190A 1990-04-19 1990-04-19 Resin-sealed semiconductor device, and manufacture thereof Pending JPH042152A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10170190A JPH042152A (en) 1990-04-19 1990-04-19 Resin-sealed semiconductor device, and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10170190A JPH042152A (en) 1990-04-19 1990-04-19 Resin-sealed semiconductor device, and manufacture thereof

Publications (1)

Publication Number Publication Date
JPH042152A true JPH042152A (en) 1992-01-07

Family

ID=14307625

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10170190A Pending JPH042152A (en) 1990-04-19 1990-04-19 Resin-sealed semiconductor device, and manufacture thereof

Country Status (1)

Country Link
JP (1) JPH042152A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5373190A (en) * 1991-08-12 1994-12-13 Mitsubishi Denki Kabushiki Kaisha Resin-sealed semiconductor device
US5893724A (en) * 1995-10-28 1999-04-13 Institute Of Microelectronics Method for forming a highly reliable and planar ball grid array package
EP1211722A1 (en) * 2000-11-30 2002-06-05 STMicroelectronics S.r.l. Manufacturing method of electronic device package
JP2009276280A (en) * 2008-05-16 2009-11-26 Denso Corp Concentration detector
US8324007B2 (en) 2007-10-30 2012-12-04 Stmicroelectronics S.R.L. Manufacturing method of an electronic device including overmolded MEMS devices
JP2015230315A (en) * 2014-06-06 2015-12-21 センシリオン アクチエンゲゼルシャフト Gas sensor package
WO2019198670A1 (en) * 2018-04-10 2019-10-17 株式会社日立ハイテクノロジーズ Electrode structure

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6132535A (en) * 1984-07-25 1986-02-15 Sanyo Electric Co Ltd Manufacture of sensor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6132535A (en) * 1984-07-25 1986-02-15 Sanyo Electric Co Ltd Manufacture of sensor

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5373190A (en) * 1991-08-12 1994-12-13 Mitsubishi Denki Kabushiki Kaisha Resin-sealed semiconductor device
US5893724A (en) * 1995-10-28 1999-04-13 Institute Of Microelectronics Method for forming a highly reliable and planar ball grid array package
EP1211722A1 (en) * 2000-11-30 2002-06-05 STMicroelectronics S.r.l. Manufacturing method of electronic device package
US8324007B2 (en) 2007-10-30 2012-12-04 Stmicroelectronics S.R.L. Manufacturing method of an electronic device including overmolded MEMS devices
JP2009276280A (en) * 2008-05-16 2009-11-26 Denso Corp Concentration detector
JP2015230315A (en) * 2014-06-06 2015-12-21 センシリオン アクチエンゲゼルシャフト Gas sensor package
WO2019198670A1 (en) * 2018-04-10 2019-10-17 株式会社日立ハイテクノロジーズ Electrode structure
JP2019186372A (en) * 2018-04-10 2019-10-24 株式会社日立ハイテクノロジーズ Electrode structure
CN111902921A (en) * 2018-04-10 2020-11-06 株式会社日立高新技术 Electrode structure
EP3780073A4 (en) * 2018-04-10 2021-12-29 Hitachi High-Tech Corporation Electrode structure
CN111902921B (en) * 2018-04-10 2024-03-12 株式会社日立高新技术 Electrode structure
US11953461B2 (en) 2018-04-10 2024-04-09 Hitachi High-Tech Corporation Electrode structure

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