JPH04214642A - Resin-sealed semiconductor device - Google Patents
Resin-sealed semiconductor deviceInfo
- Publication number
- JPH04214642A JPH04214642A JP90401690A JP40169090A JPH04214642A JP H04214642 A JPH04214642 A JP H04214642A JP 90401690 A JP90401690 A JP 90401690A JP 40169090 A JP40169090 A JP 40169090A JP H04214642 A JPH04214642 A JP H04214642A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- bonding pad
- semiconductor device
- sealed semiconductor
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 abstract description 12
- 230000003647 oxidation Effects 0.000 abstract description 6
- 238000007254 oxidation reaction Methods 0.000 abstract description 6
- 230000001681 protective effect Effects 0.000 abstract description 4
- 238000007789 sealing Methods 0.000 description 12
- 239000011347 resin Substances 0.000 description 11
- 229920005989 resin Polymers 0.000 description 11
- 238000000034 method Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000006193 liquid solution Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
- H01L2224/02165—Reinforcing structures
- H01L2224/02166—Collar structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H01L2924/01082—Lead [Pb]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は樹脂封止型半導体装置に
関し、特に半導体チップのボンディングパッドの構造に
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-sealed semiconductor device, and more particularly to the structure of a bonding pad of a semiconductor chip.
【０００２】0002
【従来の技術】従来、樹脂封止型半導体装置としては、
半導体チップのボンディングパッドが金属細線を介して
リードフレームに電気的に接続されたものがある。この
種の樹脂封止型半導体装置を図２および図３によって説
明する。[Prior Art] Conventionally, resin-sealed semiconductor devices include:
Some semiconductor chips have bonding pads electrically connected to a lead frame via thin metal wires. This type of resin-sealed semiconductor device will be explained with reference to FIGS. 2 and 3.
【０００３】図２は従来の樹脂封止型半導体装置の縦断
面図、図３は従来の樹脂封止型半導体装置における半導
体チップのボンディングパッド部分を拡大して示す断面
図である。これらの図において、１は半導体チップ、２
は前記半導体チップ１が搭載されるリードフレームであ
る。このリードフレーム２はダイパッド部２ａとリード
部２ｂとからなり、前記半導体チップ１はダイパッド部
２ａ上に接合されている。半導体チップ１の上面にはボ
ンディングパッド３が設けられており、このボンディン
グパッド３は金属ワイヤ４を介してリードフレーム２の
リード部２ｂに電気的に接続されている。なお、このボ
ンディングパッド３はアルミニウムあるいはアルミニウ
ム合金によって形成されている。５はパッシベーション
膜で、半導体チップ１の上面に設けられている。６は半
導体チップ１，金属ワイヤ４等を封止するための封止樹
脂で、上述した各部材を埋没させてモールド成形されて
いる。なお、前記リード部２ｂは、リードフレーム形成
時にはダイパッド部２ａと同様に平坦に形成されており
、樹脂封止後に先端部分が下方を向くように曲げられる
。FIG. 2 is a longitudinal cross-sectional view of a conventional resin-molded semiconductor device, and FIG. 3 is an enlarged cross-sectional view showing a bonding pad portion of a semiconductor chip in the conventional resin-molded semiconductor device. In these figures, 1 is a semiconductor chip, 2
is a lead frame on which the semiconductor chip 1 is mounted. This lead frame 2 consists of a die pad section 2a and a lead section 2b, and the semiconductor chip 1 is bonded onto the die pad section 2a. A bonding pad 3 is provided on the upper surface of the semiconductor chip 1, and the bonding pad 3 is electrically connected to the lead portion 2b of the lead frame 2 via a metal wire 4. Note that this bonding pad 3 is made of aluminum or an aluminum alloy. A passivation film 5 is provided on the upper surface of the semiconductor chip 1. Reference numeral 6 denotes a sealing resin for sealing the semiconductor chip 1, metal wires 4, etc., and is molded to embed the above-mentioned members. Note that the lead portion 2b is formed flat like the die pad portion 2a when forming the lead frame, and is bent so that the tip portion faces downward after resin sealing.
【０００４】このように構成された従来の樹脂封止型半
導体装置を組み立てるには、先ず、リードフレーム２上
に半導体チップ１を接合させる。そして、半導体チップ
１のボンディングパッド３とリードフレーム２のリード
部２ｂとを金属ワイヤ４によって接続し、リードフレー
ム２を樹脂封止装置（図示せず）のモールド金型内に装
填する。この樹脂封止装置で封止樹脂６をモールド成形
した後、図２に示すようにリードフレーム２のリード部
２ｂを曲げ加工してこの半導体装置が完成する。To assemble the conventional resin-sealed semiconductor device constructed as described above, first, the semiconductor chip 1 is bonded onto the lead frame 2. Then, the bonding pads 3 of the semiconductor chip 1 and the lead portions 2b of the lead frame 2 are connected by metal wires 4, and the lead frame 2 is loaded into a mold of a resin sealing device (not shown). After molding the sealing resin 6 using this resin sealing device, the lead portions 2b of the lead frame 2 are bent as shown in FIG. 2 to complete this semiconductor device.
【０００５】[0005]
【発明が解決しようとする課題】しかるに、このように
構成された従来の樹脂封止型半導体装置では、リード部
２ｂが導通不良を起こしやすいという問題があった。こ
れは、外気中の水分がリード部２ｂを伝ったりして封止
樹脂６を通して半導体チップ１の表面に達し、この水分
によって半導体チップ１のボンディングパッド３が腐食
されるからであった。However, the conventional resin-sealed semiconductor device constructed as described above has a problem in that the lead portion 2b is susceptible to conduction failure. This is because moisture in the outside air travels along the lead portion 2b and reaches the surface of the semiconductor chip 1 through the sealing resin 6, and the bonding pads 3 of the semiconductor chip 1 are corroded by this moisture.
【０００６】[0006]
【課題を解決するための手段】本発明に係る樹脂封止型
半導体装置は、ボンディングパッドの表面における金属
細線が接合していない部分に、酸化処理によって酸化膜
を設けたものである。[Means for Solving the Problems] A resin-sealed semiconductor device according to the present invention is one in which an oxide film is provided by oxidation treatment on a portion of the surface of a bonding pad where the thin metal wire is not bonded.
【０００７】[0007]
【作用】酸化膜が実質的に保護膜となり、ボンディング
パッドの表面が装置外からの水分に晒されなくなる。[Operation] The oxide film essentially becomes a protective film, and the surface of the bonding pad is no longer exposed to moisture from outside the device.
【０００８】[0008]
【実施例】以下、本発明の一実施例を図１によって詳細
に説明する。[Embodiment] An embodiment of the present invention will be explained in detail below with reference to FIG.
【０００９】図１は本発明に係る樹脂封止型半導体装置
の要部を拡大して示す断面図で、同図において前記図２
および図３で説明したものと同一もしくは同等部材につ
いては、同一符号を付し詳細な説明は省略する。図１に
おいて、１１はアルミ酸化膜で、このアルミ酸化膜１１
は、半導体チップ１のボンディングパッド３における金
属ワイヤ４が接合していない部分の表面に設けられてい
る。このアルミ酸化膜１１を上述したようにボンディン
グパッド３に設けるには、ボンディングパッド３に金属
ワイヤ４を接合させてからボンディングパッド３を酸化
処理して行う。酸化処理法としては、ボンディングパッ
ド３に金属ワイヤ４を接合させてから酸素雰囲気中でボ
ンディングパッド３を加熱して酸化させる方法や、金属
ワイヤ４が接合されたボンディングパッド３を発煙硝酸
等の酸化性溶液に浸す方法が採られる。FIG. 1 is an enlarged cross-sectional view showing a main part of a resin-sealed semiconductor device according to the present invention, and in the same figure, FIG.
The same or equivalent members as those explained in FIG. 3 are given the same reference numerals and detailed explanations are omitted. In FIG. 1, 11 is an aluminum oxide film, and this aluminum oxide film 11
is provided on the surface of the bonding pad 3 of the semiconductor chip 1 at a portion where the metal wire 4 is not bonded. In order to provide this aluminum oxide film 11 on the bonding pad 3 as described above, the metal wire 4 is bonded to the bonding pad 3 and then the bonding pad 3 is oxidized. Examples of oxidation treatment methods include bonding the metal wire 4 to the bonding pad 3 and then heating the bonding pad 3 in an oxygen atmosphere to oxidize it, or oxidizing the bonding pad 3 to which the metal wire 4 is bonded using fuming nitric acid or the like. A method of soaking in a liquid solution is adopted.
【００１０】次に、このようにアルミ酸化膜１１を設け
て樹脂封止型半導体装置を組み立てる手順について説明
する。先ず、従来と同様にしてリードフレーム２に半導
体チップ１を接合させ、半導体チップ１のボンディング
パッド３に金属ワイヤ４を接合させてボンディングパッ
ド３とリードフレーム２のリード部２ｂとを電気的に接
続させる。そして、ボンディングパッド３に上述した酸
化処理を施す。このように金属ワイヤ接合後に酸化処理
することで、ボンディングパッド３における金属ワイヤ
４が接合していない部分にアルミ酸化膜１１が設けられ
ることになる。このようにしてアルミ酸化膜１１を形成
した後、従来と同様にしてリードフレーム１を樹脂封止
装置に装填させ、封止樹脂６をモールド成形する。そし
て、樹脂封止後にリード部２ｂを曲げ加工して組み立て
が完了する。Next, a procedure for assembling a resin-sealed semiconductor device by providing the aluminum oxide film 11 as described above will be explained. First, the semiconductor chip 1 is bonded to the lead frame 2 in the same manner as before, and the metal wire 4 is bonded to the bonding pad 3 of the semiconductor chip 1 to electrically connect the bonding pad 3 and the lead portion 2b of the lead frame 2. let Then, the bonding pad 3 is subjected to the oxidation treatment described above. By performing the oxidation treatment after bonding the metal wires in this manner, the aluminum oxide film 11 is provided in the portions of the bonding pads 3 to which the metal wires 4 are not bonded. After forming the aluminum oxide film 11 in this manner, the lead frame 1 is loaded into a resin sealing device and the sealing resin 6 is molded in the same manner as in the conventional method. After resin sealing, the lead portion 2b is bent to complete the assembly.
【００１１】したがって、このようにボンディングパッ
ド３にアルミ酸化膜１１を設けることによって、ボンデ
ィングパッド３の表面がアルミ酸化膜１１で覆われるこ
とになるから、アルミ酸化膜１１が実質的に保護膜とな
り、ボンディングパッド３が装置外からの水分に晒され
なくなる。[0011] Therefore, by providing the aluminum oxide film 11 on the bonding pad 3 in this way, the surface of the bonding pad 3 is covered with the aluminum oxide film 11, so that the aluminum oxide film 11 essentially becomes a protective film. , the bonding pad 3 is no longer exposed to moisture from outside the device.
【００１２】0012
【発明の効果】以上説明したように本発明に係る樹脂封
止型半導体装置は、ボンディングパッドの表面における
金属細線が接合していない部分に、酸化処理によって酸
化膜を設けたため、酸化膜が実質的に保護膜となり、ボ
ンディングパッドの表面が装置外からの水分に晒されな
くなる。したがって、封止樹脂を通して侵入した装置外
の水分によってボンディングパッドが腐食するようなこ
とを防止でき、耐湿性が向上されるから、信頼性の高い
樹脂封止型半導体装置を得ることができる。Effects of the Invention As explained above, in the resin-sealed semiconductor device according to the present invention, an oxide film is formed by oxidation treatment on the part of the surface of the bonding pad where the thin metal wire is not bonded, so that the oxide film is substantially removed. This effectively serves as a protective film, preventing the surface of the bonding pad from being exposed to moisture from outside the device. Therefore, the bonding pads can be prevented from being corroded by moisture from outside the device that has entered through the sealing resin, and moisture resistance is improved, making it possible to obtain a highly reliable resin-sealed semiconductor device.
【図１】本発明に係る樹脂封止型半導体装置の要部を拡
大して示す断面図である。FIG. 1 is a cross-sectional view showing an enlarged main part of a resin-sealed semiconductor device according to the present invention.
【図２】従来の樹脂封止型半導体装置の縦断面図である
。FIG. 2 is a longitudinal cross-sectional view of a conventional resin-sealed semiconductor device.
【図３】従来の樹脂封止型半導体装置における半導体チ
ップのボンディングパッド部分を拡大して示す断面図で
ある。FIG. 3 is an enlarged cross-sectional view showing a bonding pad portion of a semiconductor chip in a conventional resin-sealed semiconductor device.
１ 半導体チップ ２ リードフレーム ３ ボンディングパッド ４ 金属ワイヤ ６ 封止樹脂 １１ アルミ酸化膜 1 Semiconductor chip 2 Lead frame 3 Bonding pad 4 Metal wire 6 Sealing resin 11 Aluminum oxide film
Claims (1)
金属細線を介してリードフレームに電気的に接続された
樹脂封止型半導体装置において、前記ボンディングパッ
ドの表面における金属細線が接合していない部分に、酸
化処理によって酸化膜を設けたことを特徴とする樹脂封
止型半導体装置。1. In a resin-sealed semiconductor device in which a bonding pad of a semiconductor chip is electrically connected to a lead frame via a thin metal wire, a portion of the surface of the bonding pad to which the thin metal wire is not bonded is oxidized. A resin-sealed semiconductor device characterized in that an oxide film is provided through processing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP90401690A JPH04214642A (en) | 1990-12-12 | 1990-12-12 | Resin-sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP90401690A JPH04214642A (en) | 1990-12-12 | 1990-12-12 | Resin-sealed semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04214642A true JPH04214642A (en) | 1992-08-05 |
Family
ID=18511527
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP90401690A Pending JPH04214642A (en) | 1990-12-12 | 1990-12-12 | Resin-sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04214642A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6603207B2 (en) | 1995-07-14 | 2003-08-05 | Matsushita Electric Industrial Co., Ltd. | Electrode structure for semiconductor device, method for forming the same, mounted body including semiconductor device and semiconductor device |
| JP2010114880A (en) * | 2008-11-04 | 2010-05-20 | Samsung Electronics Co Ltd | Surface acoustic wave element, surface acoustic wave device and methods for manufacturing the same |
-
1990
- 1990-12-12 JP JP90401690A patent/JPH04214642A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6603207B2 (en) | 1995-07-14 | 2003-08-05 | Matsushita Electric Industrial Co., Ltd. | Electrode structure for semiconductor device, method for forming the same, mounted body including semiconductor device and semiconductor device |
| JP2010114880A (en) * | 2008-11-04 | 2010-05-20 | Samsung Electronics Co Ltd | Surface acoustic wave element, surface acoustic wave device and methods for manufacturing the same |
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