JPH0421335B2 - - Google Patents
Info
- Publication number
- JPH0421335B2 JPH0421335B2 JP14749285A JP14749285A JPH0421335B2 JP H0421335 B2 JPH0421335 B2 JP H0421335B2 JP 14749285 A JP14749285 A JP 14749285A JP 14749285 A JP14749285 A JP 14749285A JP H0421335 B2 JPH0421335 B2 JP H0421335B2
- Authority
- JP
- Japan
- Prior art keywords
- annealing
- substrate
- ion
- implanted
- vacuum chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000137 annealing Methods 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 31
- 239000000470 constituent Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 description 17
- 238000009826 distribution Methods 0.000 description 16
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 10
- 238000005468 ion implantation Methods 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 229910052785 arsenic Inorganic materials 0.000 description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 231100000614 poison Toxicity 0.000 description 2
- 230000007096 poisonous effect Effects 0.000 description 2
- 240000002989 Euphorbia neriifolia Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14749285A JPS627124A (ja) | 1985-07-02 | 1985-07-02 | 半導体基板のアニ−ル装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14749285A JPS627124A (ja) | 1985-07-02 | 1985-07-02 | 半導体基板のアニ−ル装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS627124A JPS627124A (ja) | 1987-01-14 |
| JPH0421335B2 true JPH0421335B2 (cg-RX-API-DMAC7.html) | 1992-04-09 |
Family
ID=15431611
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14749285A Granted JPS627124A (ja) | 1985-07-02 | 1985-07-02 | 半導体基板のアニ−ル装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS627124A (cg-RX-API-DMAC7.html) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07114186B2 (ja) * | 1987-03-18 | 1995-12-06 | 富士通株式会社 | ▲ｉｉｉ▼▲ｖ▼族化合物半導体層の製造方法 |
| JP2716144B2 (ja) * | 1988-06-06 | 1998-02-18 | 肇 石丸 | 真空容器 |
| JPH02249228A (ja) * | 1989-03-22 | 1990-10-05 | Nec Corp | 短時間熱処理方法 |
| CN113493904B (zh) * | 2020-03-19 | 2022-06-07 | 中国科学院沈阳科学仪器股份有限公司 | 一种高温高真空退火炉 |
-
1985
- 1985-07-02 JP JP14749285A patent/JPS627124A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS627124A (ja) | 1987-01-14 |
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