JPS627124A - 半導体基板のアニ−ル装置 - Google Patents

半導体基板のアニ−ル装置

Info

Publication number
JPS627124A
JPS627124A JP14749285A JP14749285A JPS627124A JP S627124 A JPS627124 A JP S627124A JP 14749285 A JP14749285 A JP 14749285A JP 14749285 A JP14749285 A JP 14749285A JP S627124 A JPS627124 A JP S627124A
Authority
JP
Japan
Prior art keywords
substrate
ion
annealing
implanted
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14749285A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0421335B2 (cg-RX-API-DMAC7.html
Inventor
Takeshi Sakurai
武 桜井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP14749285A priority Critical patent/JPS627124A/ja
Publication of JPS627124A publication Critical patent/JPS627124A/ja
Publication of JPH0421335B2 publication Critical patent/JPH0421335B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP14749285A 1985-07-02 1985-07-02 半導体基板のアニ−ル装置 Granted JPS627124A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14749285A JPS627124A (ja) 1985-07-02 1985-07-02 半導体基板のアニ−ル装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14749285A JPS627124A (ja) 1985-07-02 1985-07-02 半導体基板のアニ−ル装置

Publications (2)

Publication Number Publication Date
JPS627124A true JPS627124A (ja) 1987-01-14
JPH0421335B2 JPH0421335B2 (cg-RX-API-DMAC7.html) 1992-04-09

Family

ID=15431611

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14749285A Granted JPS627124A (ja) 1985-07-02 1985-07-02 半導体基板のアニ−ル装置

Country Status (1)

Country Link
JP (1) JPS627124A (cg-RX-API-DMAC7.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63228711A (ja) * 1987-03-18 1988-09-22 Fujitsu Ltd ３５族化合物半導体層の製造方法
JPH01307440A (ja) * 1988-06-06 1989-12-12 Hajime Ishimaru 真空容器
JPH02249228A (ja) * 1989-03-22 1990-10-05 Nec Corp 短時間熱処理方法
CN113493904A (zh) * 2020-03-19 2021-10-12 中国科学院沈阳科学仪器股份有限公司 一种高温高真空退火炉

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63228711A (ja) * 1987-03-18 1988-09-22 Fujitsu Ltd ３５族化合物半導体層の製造方法
JPH01307440A (ja) * 1988-06-06 1989-12-12 Hajime Ishimaru 真空容器
JPH02249228A (ja) * 1989-03-22 1990-10-05 Nec Corp 短時間熱処理方法
CN113493904A (zh) * 2020-03-19 2021-10-12 中国科学院沈阳科学仪器股份有限公司 一种高温高真空退火炉

Also Published As

Publication number Publication date
JPH0421335B2 (cg-RX-API-DMAC7.html) 1992-04-09

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