JPH0418461B2 - - Google Patents
Info
- Publication number
- JPH0418461B2 JPH0418461B2 JP60077682A JP7768285A JPH0418461B2 JP H0418461 B2 JPH0418461 B2 JP H0418461B2 JP 60077682 A JP60077682 A JP 60077682A JP 7768285 A JP7768285 A JP 7768285A JP H0418461 B2 JPH0418461 B2 JP H0418461B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- region
- oxide film
- base
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10D64/0113—
-
- H10P76/40—
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60077682A JPS61234564A (ja) | 1985-04-10 | 1985-04-10 | 半導体装置の製造方法 |
| GB08604500A GB2175136B (en) | 1985-04-10 | 1986-02-24 | Semiconductor manufacturing method |
| US06/833,327 US4728618A (en) | 1985-04-10 | 1986-02-25 | Method of making a self-aligned bipolar using differential oxidation and diffusion |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60077682A JPS61234564A (ja) | 1985-04-10 | 1985-04-10 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61234564A JPS61234564A (ja) | 1986-10-18 |
| JPH0418461B2 true JPH0418461B2 (member.php) | 1992-03-27 |
Family
ID=13640660
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60077682A Granted JPS61234564A (ja) | 1985-04-10 | 1985-04-10 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61234564A (member.php) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS622657A (ja) * | 1985-06-28 | 1987-01-08 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| CN110120344B (zh) * | 2019-04-09 | 2022-08-16 | 上海华虹宏力半导体制造有限公司 | 一种在锗硅hbt中用氮化硅侧墙实现自对准结构的方法 |
-
1985
- 1985-04-10 JP JP60077682A patent/JPS61234564A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61234564A (ja) | 1986-10-18 |
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