JPH0418461B2 - - Google Patents

Info

Publication number
JPH0418461B2
JPH0418461B2 JP60077682A JP7768285A JPH0418461B2 JP H0418461 B2 JPH0418461 B2 JP H0418461B2 JP 60077682 A JP60077682 A JP 60077682A JP 7768285 A JP7768285 A JP 7768285A JP H0418461 B2 JPH0418461 B2 JP H0418461B2
Authority
JP
Japan
Prior art keywords
film
region
oxide film
base
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP60077682A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61234564A (ja
Inventor
Tadashi Hirao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60077682A priority Critical patent/JPS61234564A/ja
Priority to GB08604500A priority patent/GB2175136B/en
Priority to US06/833,327 priority patent/US4728618A/en
Publication of JPS61234564A publication Critical patent/JPS61234564A/ja
Publication of JPH0418461B2 publication Critical patent/JPH0418461B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP60077682A 1985-04-10 1985-04-10 半導体装置の製造方法 Granted JPS61234564A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP60077682A JPS61234564A (ja) 1985-04-10 1985-04-10 半導体装置の製造方法
GB08604500A GB2175136B (en) 1985-04-10 1986-02-24 Semiconductor manufacturing method
US06/833,327 US4728618A (en) 1985-04-10 1986-02-25 Method of making a self-aligned bipolar using differential oxidation and diffusion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60077682A JPS61234564A (ja) 1985-04-10 1985-04-10 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61234564A JPS61234564A (ja) 1986-10-18
JPH0418461B2 true JPH0418461B2 (h) 1992-03-27

Family

ID=13640660

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60077682A Granted JPS61234564A (ja) 1985-04-10 1985-04-10 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61234564A (h)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS622657A (ja) * 1985-06-28 1987-01-08 Mitsubishi Electric Corp 半導体装置の製造方法
CN110120344B (zh) * 2019-04-09 2022-08-16 上海华虹宏力半导体制造有限公司 一种在锗硅hbt中用氮化硅侧墙实现自对准结构的方法

Also Published As

Publication number Publication date
JPS61234564A (ja) 1986-10-18

Similar Documents

Publication Publication Date Title
US4839305A (en) Method of making single polysilicon self-aligned transistor
US4412378A (en) Method for manufacturing semiconductor device utilizing selective masking, etching and oxidation
JPH0418463B2 (h)
JPS62237754A (ja) 半導体集積回路装置及びその製造方法
JPH0611053B2 (ja) 半導体装置の製造方法
US4691436A (en) Method for fabricating a bipolar semiconductor device by undercutting and local oxidation
JPH0241170B2 (h)
US4728618A (en) Method of making a self-aligned bipolar using differential oxidation and diffusion
JPH0135505B2 (h)
JPH0418461B2 (h)
JPH0418462B2 (h)
JPH0254662B2 (h)
JPH0136710B2 (h)
JPH0466380B2 (h)
JPH0437581B2 (h)
JPH0318738B2 (h)
JPH0420263B2 (h)
JPS6286753A (ja) 半導体装置の製造方法
JPS61108169A (ja) 半導体装置
JPH0136709B2 (h)
JPS6246072B2 (h)
JPH0130310B2 (h)
JPH0157506B2 (h)
JPS612363A (ja) 半導体装置の製造方法
JPS645472B2 (h)