JPH0418028B2 - - Google Patents
Info
- Publication number
- JPH0418028B2 JPH0418028B2 JP58193887A JP19388783A JPH0418028B2 JP H0418028 B2 JPH0418028 B2 JP H0418028B2 JP 58193887 A JP58193887 A JP 58193887A JP 19388783 A JP19388783 A JP 19388783A JP H0418028 B2 JPH0418028 B2 JP H0418028B2
- Authority
- JP
- Japan
- Prior art keywords
- arc chamber
- ionized
- ion
- substance
- filament
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000126 substance Substances 0.000 claims description 41
- 238000010884 ion-beam technique Methods 0.000 claims description 20
- 238000000605 extraction Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 description 34
- 239000007789 gas Substances 0.000 description 28
- 230000008018 melting Effects 0.000 description 10
- 238000002844 melting Methods 0.000 description 10
- 239000006200 vaporizer Substances 0.000 description 8
- 229910052790 beryllium Inorganic materials 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- ZRNSSRODJSSVEJ-UHFFFAOYSA-N 2-methylpentacosane Chemical compound CCCCCCCCCCCCCCCCCCCCCCCC(C)C ZRNSSRODJSSVEJ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- DMFGNRRURHSENX-UHFFFAOYSA-N beryllium copper Chemical compound [Be].[Cu] DMFGNRRURHSENX-UHFFFAOYSA-N 0.000 description 1
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
- PWOSZCQLSAMRQW-UHFFFAOYSA-N beryllium(2+) Chemical compound [Be+2] PWOSZCQLSAMRQW-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N monofluoromethane Natural products FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58193887A JPS6086273A (ja) | 1983-10-17 | 1983-10-17 | イオン源装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58193887A JPS6086273A (ja) | 1983-10-17 | 1983-10-17 | イオン源装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5020821A Division JPH0765169B2 (ja) | 1993-01-14 | 1993-01-14 | イオン生成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6086273A JPS6086273A (ja) | 1985-05-15 |
| JPH0418028B2 true JPH0418028B2 (enrdf_load_stackoverflow) | 1992-03-26 |
Family
ID=16315385
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58193887A Granted JPS6086273A (ja) | 1983-10-17 | 1983-10-17 | イオン源装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6086273A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63211542A (ja) * | 1987-02-25 | 1988-09-02 | Nissin Electric Co Ltd | イオン源装置 |
| JPS63211543A (ja) * | 1987-02-25 | 1988-09-02 | Nissin Electric Co Ltd | イオン源装置 |
-
1983
- 1983-10-17 JP JP58193887A patent/JPS6086273A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6086273A (ja) | 1985-05-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2828247B2 (ja) | イオンビーム発生装置 | |
| US8263944B2 (en) | Directional gas injection for an ion source cathode assembly | |
| US4714860A (en) | Ion beam generating apparatus | |
| JP2009128276A (ja) | 電離真空装置 | |
| JP2859479B2 (ja) | ボロンイオンを生成するためのイオン源 | |
| KR102607134B1 (ko) | 이온 소스 재료로 요오드화알루미늄 사용 시 수소 공동 가스 | |
| JP2004530268A (ja) | イオンソースフィラメントおよび方法 | |
| JP2664094B2 (ja) | 金属イオン源および金属イオン生成方法 | |
| JPH0531260B2 (enrdf_load_stackoverflow) | ||
| JPH06349431A (ja) | フリーマン又はこれに類似のイオンソースを使用する形式のイオン注入器に使用される高融点を有する金属のイオン化装置 | |
| JPH0418028B2 (enrdf_load_stackoverflow) | ||
| JP2009283459A (ja) | マルチモードイオン源 | |
| JP3660457B2 (ja) | イオン発生装置及びイオン照射装置 | |
| JPH11271500A (ja) | ビーム発生装置 | |
| JP3595442B2 (ja) | Ｓｆ６プラズマを用いたイオン生成方法 | |
| Gutser et al. | Simulations for the generation and extraction of negative hydrogen ions in RF-driven ion sources | |
| JPH05279850A (ja) | イオン生成方法 | |
| JP3077697B1 (ja) | イオン源 | |
| JP3186777B2 (ja) | プラズマ源 | |
| JPH051895Y2 (enrdf_load_stackoverflow) | ||
| JP3140636B2 (ja) | プラズマ発生装置 | |
| JPH11238485A (ja) | イオン注入方法 | |
| JPS594045Y2 (ja) | 薄膜生成用イオン化装置 | |
| JPS602745B2 (ja) | イオン源装置 | |
| CN116564858A (zh) | 等离子注入机及等离子注入方法 |